Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136441) > Сторінка 2247 з 2275
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| IMW120R014M1HXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W Mounting: THT Drain-source voltage: 1.2kV Drain current: 89.3A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 267.9A Case: TO247 |
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| IMW120R020M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W Mounting: THT Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 188W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 213A Case: TO247 |
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| IMW120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 57mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 150A Case: TO247 |
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| IMW120R060M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W; TO247 Mounting: THT Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 113mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 76A Case: TO247 |
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IMW120R090M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247 Mounting: THT Drain-source voltage: 1.2kV Drain current: 18A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 58W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 50A Case: TO247 |
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IMZ120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 57mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 150A Case: TO247-4 |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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| IMZ120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 36A On-state resistance: 59mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -10...20V Pulsed drain current: 130A Case: TO247-4 |
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| IMZ120R060M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W Mounting: THT Drain-source voltage: 1.2kV Drain current: 26A On-state resistance: 113mΩ Type of transistor: N-MOSFET Power dissipation: 75W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 76A Case: TO247-4 |
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| IMZ120R090M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W Mounting: THT Drain-source voltage: 1.2kV Drain current: 18A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 58W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 50A Case: TO247-4 |
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| IMZA120R020M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W Mounting: THT Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 188W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 213A Case: TO247-4 |
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| TLE9104SHXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3A; Ch: 4; N-Channel; SMD; PG-DSO-20-88 Operating temperature: -40...150°C Mounting: SMD Supply voltage: 3.3...5.5V DC Application: automotive industry Kind of output: N-Channel Kind of package: reel; tape Technology: FLEX Kind of integrated circuit: low-side Case: PG-DSO-20-88 On-state resistance: 0.3Ω Turn-on time: 15µs Turn-off time: 15µs Output current: 3A Type of integrated circuit: power switch Interface: SPI Number of channels: 4 |
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XMC1402F064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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| XMC1402F064X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: EEPROM emulation; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 128kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1402F064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 200kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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| XMC1402Q040X0032AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 35 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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| XMC1402Q040X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 35 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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| XMC1402Q040X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,128kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 128kB FLASH Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1402Q048X0032AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,32kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 42 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1402Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 42 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1402Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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| XMC1402Q064X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 128kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1402Q064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: GPIO; USIC x4 Memory: 16kB SRAM; 200kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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IPB014N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced |
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IPB034N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 167W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhanced |
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IPI024N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 250W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhanced |
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IPP024N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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BTS452T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 0.15Ω Supply voltage: 6...52V DC Technology: Classic PROFET |
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| IAUA180N10S5N029AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced |
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| ITS4200SMEPHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 On-state resistance: 0.15Ω Kind of package: reel; tape Supply voltage: 11...45V DC Technology: Industrial PROFET Operating temperature: -40...125°C |
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IPP086N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 125W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRLR8256TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 81A Power dissipation: 63W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRS2184SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
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| IR38265MTRPBFAUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7 Kind of package: reel; tape DC supply current: 50mA Supply voltage: 4.5...5.5V Frequency: 0.15...1.5MHz Output voltage: 0.5...14V DC Output current: 30A Type of integrated circuit: PMIC Interface: I2C; PVID Number of channels: 1 Input voltage: 5.3...16V DC Kind of integrated circuit: POL converter Topology: buck Mounting: SMD Operating temperature: -40...125°C Case: PQFN5X7 |
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IDWD15G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 200W; TO247-2 Case: TO247-2 Mounting: THT Power dissipation: 200W Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 170A Technology: CoolSiC™ 5G; SiC |
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BSP61H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Frequency: 200MHz |
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TLD1120ELXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1 Mounting: SMD Number of channels: 1 Output current: 0.36A Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM Protection: overheating OTP Technology: Litix™ Kind of integrated circuit: high-side; LED controller Case: PG-SSOP-14-EP Operating voltage: 5.5...40V |
на замовлення 2485 шт: термін постачання 21-30 дні (днів) |
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IRFP4710PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 190W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 72A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
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| IPD70N10S312ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 280A Power dissipation: 125W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Kind of channel: enhanced |
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IRF7504TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.7A Power dissipation: 1.25W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AIGW40N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Manufacturer series: F5 Turn-on time: 30ns Turn-off time: 178ns |
на замовлення 237 шт: термін постачання 21-30 дні (днів) |
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AIGW40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Manufacturer series: H5 Turn-on time: 31ns Turn-off time: 160ns |
на замовлення 208 шт: термін постачання 21-30 дні (днів) |
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AIKW40N65DF5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Manufacturer series: F5 Turn-on time: 30ns Turn-off time: 178ns Features of semiconductor devices: integrated anti-parallel diode |
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AIKW40N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Manufacturer series: H5 Turn-on time: 31ns Turn-off time: 164ns Features of semiconductor devices: integrated anti-parallel diode |
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IRFH5010TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5015TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 10A Power dissipation: 250W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFB4137PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 341W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhanced |
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IRF6665TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.2A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IKW30N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 39.5A; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 39.5A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 29ns Turn-off time: 154ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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AIKW50N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Manufacturer series: H5 Turn-on time: 22ns Turn-off time: 256ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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AIKW50N65DF5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Turn-on time: 33ns Turn-off time: 162ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
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IRFB38N20DPBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 44A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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BSP89H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Mounting: SMD Case: SOT223 Drain-source voltage: 240V Drain current: 0.35A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 506 шт: термін постачання 21-30 дні (днів) |
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BTS4141N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-SOT223-4 On-state resistance: 0.175Ω Technology: Classic PROFET Output voltage: 12...45V |
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ITS4141NHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Mounting: SMD Supply voltage: 12...45V DC Number of channels: 1 Case: SOT223 Operating temperature: -30...85°C Kind of package: reel; tape Output current: 0.7A Kind of output: N-Channel Turn-off time: 0.1ms Power dissipation: 1.4W Technology: Industrial PROFET On-state resistance: 0.2Ω Turn-on time: 150µs |
на замовлення 6313 шт: термін постачання 21-30 дні (днів) |
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XMC1404F064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1404F064X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; CCU8; EEPROM emulation; internal temperature sensor; POSIF; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Memory: 16kB SRAM; 128kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1404F064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-64 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Memory: 16kB SRAM; 200kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1404Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Interface: CAN x2; GPIO; USIC x4 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 42 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1404Q048X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 42 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 200kB FLASH |
товар відсутній |
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XMC1404Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Operating temperature: -40...105°C Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog Supply voltage: 1.8...5.5V DC Interface: CAN x2; GPIO; USIC x4 Number of inputs/outputs: 55 Number of 16bit timers: 16 Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 Memory: 16kB SRAM; 64kB FLASH |
товар відсутній |
| IMW120R014M1HXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 89.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 267.9A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 89.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 267.9A
Case: TO247
товар відсутній
| IMW120R020M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 213A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 213A
Case: TO247
товар відсутній
| IMW120R030M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 150A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 150A
Case: TO247
товар відсутній
| IMW120R060M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 113mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 76A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 113mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 76A
Case: TO247
товар відсутній
| IMW120R090M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W; TO247
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
Case: TO247
товар відсутній
| IMZ120R030M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 150A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 45A
On-state resistance: 57mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 150A
Case: TO247-4
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1854.41 грн |
| 2+ | 1628.31 грн |
| 3+ | 1627.58 грн |
| IMZ120R045M1XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247-4
товар відсутній
| IMZ120R060M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 113mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 76A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 26A; Idm: 76A; 75W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 26A
On-state resistance: 113mΩ
Type of transistor: N-MOSFET
Power dissipation: 75W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 76A
Case: TO247-4
товар відсутній
| IMZ120R090M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 50A; 58W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 18A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 50A
Case: TO247-4
товар відсутній
| IMZA120R020M1HXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 213A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 213A
Case: TO247-4
товар відсутній
| TLE9104SHXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 4; N-Channel; SMD; PG-DSO-20-88
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 3.3...5.5V DC
Application: automotive industry
Kind of output: N-Channel
Kind of package: reel; tape
Technology: FLEX
Kind of integrated circuit: low-side
Case: PG-DSO-20-88
On-state resistance: 0.3Ω
Turn-on time: 15µs
Turn-off time: 15µs
Output current: 3A
Type of integrated circuit: power switch
Interface: SPI
Number of channels: 4
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 4; N-Channel; SMD; PG-DSO-20-88
Operating temperature: -40...150°C
Mounting: SMD
Supply voltage: 3.3...5.5V DC
Application: automotive industry
Kind of output: N-Channel
Kind of package: reel; tape
Technology: FLEX
Kind of integrated circuit: low-side
Case: PG-DSO-20-88
On-state resistance: 0.3Ω
Turn-on time: 15µs
Turn-off time: 15µs
Output current: 3A
Type of integrated circuit: power switch
Interface: SPI
Number of channels: 4
товар відсутній
| XMC1402F064X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402F064X0128AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: EEPROM emulation; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402F064X0200AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402Q040X0032AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 35
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 35
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402Q040X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 35
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 35
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402Q040X0128AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation (DataFlash); math coprocessor; POSIF; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402Q048X0032AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,32kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,32kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402Q048X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402Q064X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402Q064X0128AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1402Q064X0200AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: GPIO; USIC x4
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| IPB014N06NATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPB034N06L3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPI024N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP024N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 42 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 368.22 грн |
| 3+ | 294.01 грн |
| 5+ | 206.9 грн |
| 12+ | 196.01 грн |
| BTS452T |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 0.15Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
товар відсутній
| IAUA180N10S5N029AUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| ITS4200SMEPHUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.15Ω
Kind of package: reel; tape
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 0.15Ω
Kind of package: reel; tape
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
товар відсутній
| IPP086N10N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRLR8256TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRS2184SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
товар відсутній
| IR38265MTRPBFAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Kind of package: reel; tape
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: I2C; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Operating temperature: -40...125°C
Case: PQFN5X7
товар відсутній
| IDWD15G120C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 200W; TO247-2
Case: TO247-2
Mounting: THT
Power dissipation: 200W
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 170A
Technology: CoolSiC™ 5G; SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 200W; TO247-2
Case: TO247-2
Mounting: THT
Power dissipation: 200W
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 170A
Technology: CoolSiC™ 5G; SiC
товар відсутній
| BSP61H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 1A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Frequency: 200MHz
товар відсутній
| TLD1120ELXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1
Mounting: SMD
Number of channels: 1
Output current: 0.36A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: high-side; LED controller
Case: PG-SSOP-14-EP
Operating voltage: 5.5...40V
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1
Mounting: SMD
Number of channels: 1
Output current: 0.36A
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: high-side; LED controller
Case: PG-SSOP-14-EP
Operating voltage: 5.5...40V
на замовлення 2485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.6 грн |
| 9+ | 44.14 грн |
| 23+ | 38.62 грн |
| 61+ | 36.52 грн |
| 500+ | 35.14 грн |
| IRFP4710PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 190W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 72A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 190W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 72A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPD70N10S312ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF7504TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.7A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.7A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AIGW40N65F5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
на замовлення 237 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 536.31 грн |
| 2+ | 433.39 грн |
| 6+ | 409.44 грн |
| 100+ | 392.74 грн |
| AIGW40N65H5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
на замовлення 208 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 509.73 грн |
| 3+ | 325.95 грн |
| 8+ | 308.53 грн |
| 30+ | 307.8 грн |
| AIKW40N65DF5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| AIKW40N65DH5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRFH5010TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5015TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFB4137PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 341W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF6665TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IKW30N65ES5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 39.5A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 154ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 39.5A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 29ns
Turn-off time: 154ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 352.59 грн |
| 3+ | 294.74 грн |
| 4+ | 225.77 грн |
| 11+ | 213.43 грн |
| AIKW50N65DH5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 22ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 22ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| AIKW50N65DF5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 33ns
Turn-off time: 162ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 33ns
Turn-off time: 162ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IRFB38N20DPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 178.25 грн |
| 9+ | 98 грн |
| BSP89H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 506 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 37.53 грн |
| 47+ | 18.51 грн |
| 127+ | 17.5 грн |
| BTS4141N | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
товар відсутній
| ITS4141NHUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 12...45V DC
Number of channels: 1
Case: SOT223
Operating temperature: -30...85°C
Kind of package: reel; tape
Output current: 0.7A
Kind of output: N-Channel
Turn-off time: 0.1ms
Power dissipation: 1.4W
Technology: Industrial PROFET
On-state resistance: 0.2Ω
Turn-on time: 150µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 12...45V DC
Number of channels: 1
Case: SOT223
Operating temperature: -30...85°C
Kind of package: reel; tape
Output current: 0.7A
Kind of output: N-Channel
Turn-off time: 0.1ms
Power dissipation: 1.4W
Technology: Industrial PROFET
On-state resistance: 0.2Ω
Turn-on time: 150µs
на замовлення 6313 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.25 грн |
| 5+ | 116.15 грн |
| 10+ | 111.8 грн |
| 11+ | 78.4 грн |
| 31+ | 74.05 грн |
| 1000+ | 71.14 грн |
| XMC1404F064X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1404F064X0128AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; CCU8; EEPROM emulation; internal temperature sensor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; CCU8; EEPROM emulation; internal temperature sensor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1404F064X0200AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1404Q048X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Interface: CAN x2; GPIO; USIC x4
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
| XMC1404Q048X0200AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 200kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 42
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 200kB FLASH
товар відсутній
| XMC1404Q064X0064AAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Operating temperature: -40...105°C
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Interface: CAN x2; GPIO; USIC x4
Number of inputs/outputs: 55
Number of 16bit timers: 16
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Memory: 16kB SRAM; 64kB FLASH
товар відсутній