Технічний опис IPD65R250C6XTMA1 Infineon Technologies
Description: MOSFET N-CH 650V 16.1A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V, Power Dissipation (Max): 208.3W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 400µA, Supplier Device Package: PG-TO252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.
Інші пропозиції IPD65R250C6XTMA1
| Фото | Назва | Виробник | Інформація |
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IPD65R250C6XTMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 16.1A Power dissipation: 208.3W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD65R250C6XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 16.1A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V Power Dissipation (Max): 208.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 400µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
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IPD65R250C6XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 16.1A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V Power Dissipation (Max): 208.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 400µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
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IPD65R250C6XTMA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 700V 16.1A DPAK-2 |
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IPD65R250C6XTMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 16.1A Power dissipation: 208.3W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced |
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