| Фото | Назва | Виробник | Інформація |
Доступність |
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| FDD8770 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK Drain-source voltage: 25V Drain current: 210A On-state resistance: 5.9mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Kind of package: reel; tape Gate charge: 73nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 407A Mounting: SMD Case: DPAK кількість в упаковці: 1 шт |
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| FDD8796 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 25V Drain current: 98A Pulsed drain current: 305A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDD8796/BKN | ONSEMI | FDD8796BKN-ONS SMD N channel transistors |
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FDD8870 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 160W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDD8876 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 73A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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FDD8878 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDD8880 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 58A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDD8896 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 94A Power dissipation: 80W Case: DPAK Gate-source voltage: ±20V On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2450 шт: термін постачання 14-21 дні (днів) |
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FDD8N50NZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.9A Pulsed drain current: 26A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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FDFS2P106A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8 Mounting: SMD Case: SO8 Power dissipation: 1.6W Polarisation: unipolar Drain current: -3A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 192mΩ кількість в упаковці: 1 шт |
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FDG1024NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Mounting: SMD Drain current: 1.2A Drain-source voltage: 20V Power dissipation: 0.36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.6nC Technology: PowerTrench® Kind of channel: enhanced On-state resistance: 389mΩ Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 Case: SC70-6; SC88; SOT363 кількість в упаковці: 1 шт |
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| FDG316P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.6A; 0.75W; SC70-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.6A Power dissipation: 0.75W Case: SC70-6 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDG327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.42W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V On-state resistance: 0.115Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDG6301N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 7Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Gate charge: 0.4nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 155 шт: термін постачання 14-21 дні (днів) |
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| FDG6301N-F085 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 7Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 1 шт |
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FDG6303N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W Type of transistor: N-MOSFET x2 Technology: DMOS Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.5A Pulsed drain current: 1.3A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 On-state resistance: 770mΩ Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 5 шт |
на замовлення 1725 шт: термін постачання 14-21 дні (днів) |
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FDG6304P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W; SC70-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -25V Drain current: -0.41A Power dissipation: 0.3W Case: SC70-6 Gate-source voltage: ±8V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1910 шт: термін постачання 14-21 дні (днів) |
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FDG6308P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.6A; 0.3W Mounting: SMD Kind of package: reel; tape Case: SC70-6; SC88; SOT363 On-state resistance: 0.8Ω Power dissipation: 0.3W Gate charge: 2.5nC Polarisation: unipolar Technology: PowerTrench® Drain current: -0.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Gate-source voltage: ±8V кількість в упаковці: 1 шт |
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| FDG6317NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 0.56Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| FDG6321C | ONSEMI |
FDG6321C Multi channel transistors |
на замовлення 2791 шт: термін постачання 14-21 дні (днів) |
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FDG6322C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Case: SC70-6 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.3W Gate charge: 0.4/1.5nC Polarisation: unipolar Technology: PowerTrench® Drain current: 0.22/0.41A Kind of channel: enhanced Drain-source voltage: 25/-25V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET On-state resistance: 7/1.9Ω Gate-source voltage: ±8/±8V кількість в упаковці: 1 шт |
на замовлення 2863 шт: термін постачання 14-21 дні (днів) |
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| FDG6335N | ONSEMI |
FDG6335N Multi channel transistors |
на замовлення 1977 шт: термін постачання 14-21 дні (днів) |
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FDG8850NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.75A; 0.36W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 0.75A On-state resistance: 0.6Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.36W Polarisation: unipolar Gate charge: 1.44nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: SC70-6; SC88; SOT363 кількість в упаковці: 1 шт |
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FDH047AN08A0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO247 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 138nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDH055N15A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 118A; 429W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 118A Power dissipation: 429W Case: TO247 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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FDH210N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247 Mounting: THT Pulsed drain current: 840A Power dissipation: 462W Gate charge: 301nC Polarisation: unipolar Drain current: 132A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247 On-state resistance: 5.5mΩ кількість в упаковці: 1 шт |
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| FDH333 | ONSEMI |
FDH333 THT universal diodes |
на замовлення 3472 шт: термін постачання 14-21 дні (днів) |
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| FDH3632 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.8A Power dissipation: 310W Case: TO247 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDH44N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247 Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 750W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDL100N50F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264 Drain-source voltage: 500V Drain current: 100A Case: TO264 Polarisation: unipolar On-state resistance: 55mΩ Power dissipation: 2.5kW Technology: UniFET™ Kind of channel: enhanced Gate charge: 238nC Gate-source voltage: ±30V Kind of package: tube Type of transistor: N-MOSFET Mounting: THT кількість в упаковці: 1 шт |
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| FDLL300A | ONSEMI |
FDLL300A SMD universal diodes |
на замовлення 548 шт: термін постачання 14-21 дні (днів) |
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FDLL4148 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Max. load current: 0.4A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 21109 шт: термін постачання 14-21 дні (днів) |
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| FDLL4148-D87Z | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 10000 шт |
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FDLL4448 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Max. load current: 0.4A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD80 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: reel; tape кількість в упаковці: 25 шт |
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| FDLL914 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A Semiconductor structure: single diode Max. off-state voltage: 100V Load current: 0.3A Case: SOD80 Max. forward voltage: 1V Max. forward impulse current: 1A Mounting: SMD Max. load current: 0.4A Kind of package: reel; tape Power dissipation: 0.5W Type of diode: switching Reverse recovery time: 4ns кількість в упаковці: 25 шт |
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| FDM3622 | ONSEMI |
FDM3622 SMD N channel transistors |
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| FDMA037N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6A; Idm: 55A; 2.4W; WDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 6A Pulsed drain current: 55A Power dissipation: 2.4W Case: WDFN6 Gate-source voltage: ±20V On-state resistance: 61mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDMA1023PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Power dissipation: 1.5W Case: MicroFET Gate-source voltage: ±8V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| FDMA1024NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6 Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.3nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6A Case: WDFN6 Drain-source voltage: 20V Drain current: 5A On-state resistance: 75mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| FDMA1027P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -6A Case: MicroFET Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDMA1028NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 1.4W Case: MicroFET Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| FDMA1029PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -6A Power dissipation: 1.4W Case: MicroFET Gate-source voltage: ±12V On-state resistance: 141mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| FDMA2002NZ | ONSEMI |
FDMA2002NZ Multi channel transistors |
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FDMA291P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET Mounting: SMD Power dissipation: 2.4W Gate charge: 14nC Polarisation: unipolar Technology: PowerTrench® Drain current: -6.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 98mΩ кількість в упаковці: 1 шт |
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| FDMA3023PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6 Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 0.14Ω Type of transistor: P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: WDFN6 кількість в упаковці: 1 шт |
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| FDMA410NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.5A; 2.4W; WDFN6 Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN6 On-state resistance: 32mΩ кількість в упаковці: 1 шт |
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| FDMA420NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6 Mounting: SMD Case: WDFN6 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 5.7A On-state resistance: 44mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A кількість в упаковці: 1 шт |
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FDMA430NZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET Mounting: SMD Power dissipation: 2.4W Gate charge: 11nC Polarisation: unipolar Technology: PowerTrench® Drain current: 5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: MicroFET On-state resistance: 61mΩ кількість в упаковці: 3000 шт |
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 +1 |
FDMA507PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET Case: MicroFET Mounting: SMD Kind of package: reel; tape Drain current: -7.8A On-state resistance: 35mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 42nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -20V кількість в упаковці: 3000 шт |
товар відсутній |
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FDMA530PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.8A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±25V On-state resistance: 65mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1133 шт: термін постачання 14-21 дні (днів) |
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 +1 |
FDMA6023PZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.6A; 1.4W; MicroFET Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Case: MicroFET Gate charge: 17nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -20V Drain current: -3.6A On-state resistance: 0.17Ω Type of transistor: P-MOSFET x2 кількість в упаковці: 1 шт |
на замовлення 338 шт: термін постачання 14-21 дні (днів) |
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| FDMA7630 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 24A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| FDMA7672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET Mounting: SMD Pulsed drain current: 24A Power dissipation: 2.4W Gate charge: 13nC Polarisation: unipolar Drain current: 9A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: MicroFET On-state resistance: 32mΩ кількість в упаковці: 1 шт |
товар відсутній |
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| FDMA8051L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 80A; 2.4W; MicroFET Case: MicroFET Mounting: SMD Drain current: 10A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 19mΩ Pulsed drain current: 80A Power dissipation: 2.4W Gate charge: 20nC Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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| FDMA86108LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.2A; Idm: 6A; 2.4W; MicroFET Mounting: SMD Case: MicroFET Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 2.4W On-state resistance: 446mΩ Polarisation: unipolar Gate charge: 3nC Gate-source voltage: ±20V Pulsed drain current: 6A Drain-source voltage: 100V Drain current: 2.2A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| FDMA86151L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 20A; 2.4W; MicroFET Mounting: SMD Case: MicroFET Kind of package: reel; tape Power dissipation: 2.4W Gate charge: 7.3nC Polarisation: unipolar Drain current: 3.3A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: 20A кількість в упаковці: 1 шт |
товар відсутній |
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| FDMA86551L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; 2.4W; WDFN6 Kind of package: reel; tape Case: WDFN6 Drain-source voltage: 60V Drain current: 7.5A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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| FDMA8878 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2.4W; WDFN6 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 10A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: WDFN6 кількість в упаковці: 1 шт |
товар відсутній |
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| FDMA905P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6 Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Drain current: -10A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: WDFN6 On-state resistance: 21mΩ кількість в упаковці: 1 шт |
товар відсутній |
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| FDMA908PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -40A; 2.4W Mounting: SMD Pulsed drain current: -40A Power dissipation: 2.4W Gate charge: 34nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: -12A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 16mΩ кількість в упаковці: 1 шт |
товар відсутній |
| FDD8770 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK
Drain-source voltage: 25V
Drain current: 210A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 73nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 407A
Mounting: SMD
Case: DPAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK
Drain-source voltage: 25V
Drain current: 210A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 73nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 407A
Mounting: SMD
Case: DPAK
кількість в упаковці: 1 шт
товар відсутній
| FDD8796 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 98A
Pulsed drain current: 305A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 98A
Pulsed drain current: 305A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDD8870 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDD8876 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.39 грн |
| 5+ | 84.13 грн |
| 16+ | 65.15 грн |
| 44+ | 61.6 грн |
| 500+ | 59.24 грн |
| FDD8878 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDD8880 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDD8896 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2450 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.87 грн |
| 10+ | 62.78 грн |
| 23+ | 44.43 грн |
| 63+ | 41.81 грн |
| FDD8N50NZTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| FDFS2P106A |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 192mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 192mΩ
кількість в упаковці: 1 шт
товар відсутній
| FDG1024NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhanced
On-state resistance: 389mΩ
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Case: SC70-6; SC88; SOT363
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhanced
On-state resistance: 389mΩ
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Case: SC70-6; SC88; SOT363
кількість в упаковці: 1 шт
товар відсутній
| FDG316P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.6A; 0.75W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.6A
Power dissipation: 0.75W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.6A; 0.75W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.6A
Power dissipation: 0.75W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDG327N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.42W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.42W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDG6301N |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 0.4nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 0.4nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 155 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.27 грн |
| 25+ | 18.36 грн |
| 69+ | 14.97 грн |
| 188+ | 14.15 грн |
| 3000+ | 13.59 грн |
| FDG6301N-F085 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
| FDG6303N |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Pulsed drain current: 1.3A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Pulsed drain current: 1.3A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 5 шт
на замовлення 1725 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.52 грн |
| 25+ | 17.01 грн |
| 85+ | 11.87 грн |
| 235+ | 11.22 грн |
| FDG6304P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W; SC70-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.41A
Power dissipation: 0.3W
Case: SC70-6
Gate-source voltage: ±8V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W; SC70-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.41A
Power dissipation: 0.3W
Case: SC70-6
Gate-source voltage: ±8V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1910 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.87 грн |
| 25+ | 25.51 грн |
| 62+ | 16.24 грн |
| 170+ | 15.35 грн |
| FDG6308P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.6A; 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 0.8Ω
Power dissipation: 0.3W
Gate charge: 2.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.6A; 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 0.8Ω
Power dissipation: 0.3W
Gate charge: 2.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
| FDG6317NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| FDG6321C |
|
Виробник: ONSEMI
FDG6321C Multi channel transistors
FDG6321C Multi channel transistors
на замовлення 2791 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.03 грн |
| 61+ | 16.79 грн |
| 166+ | 15.88 грн |
| FDG6322C |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SC70-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Gate charge: 0.4/1.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.22/0.41A
Kind of channel: enhanced
Drain-source voltage: 25/-25V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
On-state resistance: 7/1.9Ω
Gate-source voltage: ±8/±8V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SC70-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Gate charge: 0.4/1.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.22/0.41A
Kind of channel: enhanced
Drain-source voltage: 25/-25V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
On-state resistance: 7/1.9Ω
Gate-source voltage: ±8/±8V
кількість в упаковці: 1 шт
на замовлення 2863 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.78 грн |
| 25+ | 22.62 грн |
| 64+ | 15.29 грн |
| 176+ | 14.46 грн |
| FDG6335N |
|
Виробник: ONSEMI
FDG6335N Multi channel transistors
FDG6335N Multi channel transistors
на замовлення 1977 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.86 грн |
| 55+ | 18.73 грн |
| 149+ | 17.68 грн |
| FDG8850NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.75A; 0.36W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.75A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.36W
Polarisation: unipolar
Gate charge: 1.44nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SC70-6; SC88; SOT363
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.75A; 0.36W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.75A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.36W
Polarisation: unipolar
Gate charge: 1.44nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SC70-6; SC88; SOT363
кількість в упаковці: 1 шт
товар відсутній
| FDH047AN08A0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDH055N15A |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; 429W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Power dissipation: 429W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; 429W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Power dissipation: 429W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 680.16 грн |
| 3+ | 432.42 грн |
| 7+ | 393.76 грн |
| FDH210N08 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247
Mounting: THT
Pulsed drain current: 840A
Power dissipation: 462W
Gate charge: 301nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 5.5mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247
Mounting: THT
Pulsed drain current: 840A
Power dissipation: 462W
Gate charge: 301nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 5.5mΩ
кількість в упаковці: 1 шт
товар відсутній
| FDH333 |
|
Виробник: ONSEMI
FDH333 THT universal diodes
FDH333 THT universal diodes
на замовлення 3472 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.21 грн |
| 283+ | 3.59 грн |
| 776+ | 3.4 грн |
| FDH3632 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDH44N50 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDL100N50F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Drain-source voltage: 500V
Drain current: 100A
Case: TO264
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 2.5kW
Technology: UniFET™
Kind of channel: enhanced
Gate charge: 238nC
Gate-source voltage: ±30V
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Drain-source voltage: 500V
Drain current: 100A
Case: TO264
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 2.5kW
Technology: UniFET™
Kind of channel: enhanced
Gate charge: 238nC
Gate-source voltage: ±30V
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| FDLL300A |
|
Виробник: ONSEMI
FDLL300A SMD universal diodes
FDLL300A SMD universal diodes
на замовлення 548 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 9.22 грн |
| 265+ | 3.82 грн |
| 729+ | 3.62 грн |
| 2500+ | 3.61 грн |
| FDLL4148 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 21109 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 143+ | 1.97 грн |
| 250+ | 1.26 грн |
| 1000+ | 1.06 грн |
| 1097+ | 0.93 грн |
| 3010+ | 0.88 грн |
| 20000+ | 0.85 грн |
| FDLL4148-D87Z |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 10000 шт
товар відсутній
| FDLL4448 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 25 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
кількість в упаковці: 25 шт
товар відсутній
| FDLL914 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 0.3A
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Mounting: SMD
Max. load current: 0.4A
Kind of package: reel; tape
Power dissipation: 0.5W
Type of diode: switching
Reverse recovery time: 4ns
кількість в упаковці: 25 шт
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 0.3A
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Mounting: SMD
Max. load current: 0.4A
Kind of package: reel; tape
Power dissipation: 0.5W
Type of diode: switching
Reverse recovery time: 4ns
кількість в упаковці: 25 шт
товар відсутній
| FDMA037N08LC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6A; Idm: 55A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6A
Pulsed drain current: 55A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±20V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6A; Idm: 55A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6A
Pulsed drain current: 55A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±20V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMA1023PZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.5W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.5W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| FDMA1024NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: WDFN6
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: WDFN6
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| FDMA1027P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -6A
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -6A
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMA1028NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| FDMA1029PZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -6A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 141mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -6A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 141mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMA291P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 14nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -6.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 98mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 14nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -6.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 98mΩ
кількість в упаковці: 1 шт
товар відсутній
| FDMA3023PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 0.14Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: WDFN6
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 0.14Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: WDFN6
кількість в упаковці: 1 шт
товар відсутній
| FDMA410NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.5A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 32mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.5A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 32mΩ
кількість в упаковці: 1 шт
товар відсутній
| FDMA420NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Case: WDFN6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Case: WDFN6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
кількість в упаковці: 1 шт
товар відсутній
| FDMA430NZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 11nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 61mΩ
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 11nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 61mΩ
кількість в упаковці: 3000 шт
товар відсутній
| FDMA507PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 42nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 42nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
кількість в упаковці: 3000 шт
товар відсутній
| FDMA530PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.8A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.8A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1133 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.03 грн |
| 6+ | 47.86 грн |
| 25+ | 40.94 грн |
| 27+ | 37.41 грн |
| 75+ | 35.37 грн |
| 500+ | 34.41 грн |
| FDMA6023PZT |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.6A; 1.4W; MicroFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Case: MicroFET
Gate charge: 17nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET x2
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.6A; 1.4W; MicroFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Case: MicroFET
Gate charge: 17nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET x2
кількість в упаковці: 1 шт
на замовлення 338 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.25 грн |
| 6+ | 47.04 грн |
| 25+ | 40.94 грн |
| 31+ | 33.54 грн |
| 84+ | 31.71 грн |
| FDMA7630 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMA7672 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 2.4W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 32mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 2.4W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 32mΩ
кількість в упаковці: 1 шт
товар відсутній
| FDMA8051L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 80A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 19mΩ
Pulsed drain current: 80A
Power dissipation: 2.4W
Gate charge: 20nC
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 80A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 19mΩ
Pulsed drain current: 80A
Power dissipation: 2.4W
Gate charge: 20nC
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| FDMA86108LZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.2A; Idm: 6A; 2.4W; MicroFET
Mounting: SMD
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.4W
On-state resistance: 446mΩ
Polarisation: unipolar
Gate charge: 3nC
Gate-source voltage: ±20V
Pulsed drain current: 6A
Drain-source voltage: 100V
Drain current: 2.2A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.2A; Idm: 6A; 2.4W; MicroFET
Mounting: SMD
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.4W
On-state resistance: 446mΩ
Polarisation: unipolar
Gate charge: 3nC
Gate-source voltage: ±20V
Pulsed drain current: 6A
Drain-source voltage: 100V
Drain current: 2.2A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| FDMA86151L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 20A; 2.4W; MicroFET
Mounting: SMD
Case: MicroFET
Kind of package: reel; tape
Power dissipation: 2.4W
Gate charge: 7.3nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 20A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 20A; 2.4W; MicroFET
Mounting: SMD
Case: MicroFET
Kind of package: reel; tape
Power dissipation: 2.4W
Gate charge: 7.3nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 20A
кількість в упаковці: 1 шт
товар відсутній
| FDMA86551L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; 2.4W; WDFN6
Kind of package: reel; tape
Case: WDFN6
Drain-source voltage: 60V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; 2.4W; WDFN6
Kind of package: reel; tape
Case: WDFN6
Drain-source voltage: 60V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| FDMA8878 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2.4W; WDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: WDFN6
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2.4W; WDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: WDFN6
кількість в упаковці: 1 шт
товар відсутній
| FDMA905P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 21mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 21mΩ
кількість в упаковці: 1 шт
товар відсутній
| FDMA908PZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -40A; 2.4W
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 2.4W
Gate charge: 34nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 16mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -40A; 2.4W
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 2.4W
Gate charge: 34nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 16mΩ
кількість в упаковці: 1 шт
товар відсутній