Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FDN5632N-F085 | ONSEMI |
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на замовлення 1885 шт: термін постачання 14-21 дні (днів) |
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FDN8601 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.5W; SuperSOT-3 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 2.7A On-state resistance: 183mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-3 кількість в упаковці: 1 шт |
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FDN86265P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -0.8A; 1.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -0.8A Power dissipation: 1.5W Case: SuperSOT-3 Gate-source voltage: ±25V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP030N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 138A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FDP038AN06A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
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FDP047AN08A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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FDP047N08-F102 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 116A; Idm: 656A; 168W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 116A Pulsed drain current: 656A Power dissipation: 168W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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FDP050AN06A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Technology: PowerTrench® Case: TO220AB Mounting: THT On-state resistance: 11mΩ Kind of package: tube Power dissipation: 245W Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 18A Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
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FDP060AN08A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 255W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 255W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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FDP075N15A-F102 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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FDP083N15A-F102 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 294W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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FDP16AN08A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 44A; 135W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 44A Power dissipation: 135W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP18N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 21 шт: термін постачання 14-21 дні (днів) |
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FDP20N50F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP22N50N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 46 шт: термін постачання 14-21 дні (днів) |
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FDP2532 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB Mounting: THT Drain-source voltage: 150V Kind of package: tube Case: TO220AB Gate charge: 107nC Technology: PowerTrench® Kind of channel: enhanced Drain current: 56A Gate-source voltage: ±20V On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 310W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 48 шт: термін постачання 14-21 дні (днів) |
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FDP2552 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB Mounting: THT Drain-source voltage: 150V Kind of package: tube Case: TO220AB Kind of channel: enhanced Drain current: 26A Gate-source voltage: ±20V On-state resistance: 97mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar кількість в упаковці: 1 шт |
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FDP2572 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB Mounting: THT Drain-source voltage: 150V Kind of package: tube Case: TO220AB Gate charge: 34nC Kind of channel: enhanced Drain current: 20A Gate-source voltage: ±20V On-state resistance: 146mΩ Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar кількість в упаковці: 1 шт |
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FDP2614 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 39.3A; 260W; TO220-3 Mounting: THT Case: TO220-3 Drain-source voltage: 200V Drain current: 39.3A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 260W Polarisation: unipolar Kind of package: tube Gate charge: 99nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1 шт |
на замовлення 82 шт: термін постачання 14-21 дні (днів) |
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FDP26N40 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 15.6A; 265W; TO220-3 Mounting: THT Case: TO220-3 Drain-source voltage: 400V Drain current: 15.6A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 265W Polarisation: unipolar Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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FDP2710 | ONSEMI |
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на замовлення 36 шт: термін постачання 14-21 дні (днів) |
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FDP2D3N10C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3 Drain-source voltage: 100V Drain current: 157A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 888A Mounting: THT Case: TO220-3 кількість в упаковці: 1 шт |
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FDP33N25 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 20.4A; Idm: 132A; 235W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 20.4A Pulsed drain current: 132A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP3632 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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FDP3651U | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 255W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 255W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 9.8nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 800 шт |
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FDP3652 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP3672 | ONSEMI |
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FDP3682 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 95W; TO220-3 Kind of package: tube Drain-source voltage: 100V Drain current: 23A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220-3 кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
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FDP42AN15A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 24A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.107Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 98 шт: термін постачання 14-21 дні (днів) |
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FDP51N25 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 320W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 320W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP52N20 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 200V Drain current: 33A Power dissipation: 357W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP7030BL | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP75N08A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 300A; 137W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 47A Pulsed drain current: 300A Power dissipation: 137W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP80N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3 Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 320A Power dissipation: 176W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP8447L | ONSEMI |
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FDP8860 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 556A Power dissipation: 254W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: THT Gate charge: 222nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDP8880 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB Mounting: THT Power dissipation: 55W Polarisation: unipolar Drain current: 48A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 19mΩ Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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FDP8N50NZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDPF12N50T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 291 шт: термін постачання 14-21 дні (днів) |
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FDPF12N60NZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 78 шт: термін постачання 14-21 дні (днів) |
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FDPF14N30 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP Drain-source voltage: 300V Drain current: 8.4A On-state resistance: 0.29Ω Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: tube Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 56A Mounting: THT Case: TO220FP кількість в упаковці: 1 шт |
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FDPF15N65 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.5A Pulsed drain current: 60A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDPF16N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9.6A; Idm: 64A; 38.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.6A Pulsed drain current: 64A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDPF16N50T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9.6A; Idm: 64A; 38.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.6A Pulsed drain current: 64A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDPF18N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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FDPF18N50T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDPF190N15A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 17.4A; Idm: 110A; 33W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Power dissipation: 33W Pulsed drain current: 110A Drain-source voltage: 150V Drain current: 17.4A On-state resistance: 19mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 39nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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FDPF20N50FT | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDPF20N50T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Pulsed drain current: 80A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 59.5nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FDPF2D3N10C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP Drain-source voltage: 100V Drain current: 157A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube Gate charge: 152nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 888A Mounting: THT Case: TO220FP кількість в упаковці: 1 шт |
товар відсутній |
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FDPF320N06L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 84A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 30.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
товар відсутній |
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FDPF3860T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.7A Power dissipation: 33.8W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 38.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FDPF390N15A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 150V Drain current: 10A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 22W Polarisation: unipolar Gate charge: 18.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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FDPF39N20 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 200V Drain current: 23.4A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 37W Polarisation: unipolar Gate charge: 49nC Technology: UniFET™ Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1 шт |
товар відсутній |
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FDPF3N50NZ | ONSEMI |
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товар відсутній |
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FDPF51N25 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 38W; TO220FP Case: TO220FP Drain-source voltage: 250V Drain current: 30A On-state resistance: 48mΩ Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: tube Gate charge: 70nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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FDPF55N06 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34.8A Pulsed drain current: 220A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.22Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 97 шт: термін постачання 14-21 дні (днів) |
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FDS2572 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8 Mounting: SMD On-state resistance: 53mΩ Type of transistor: N-MOSFET Drain-source voltage: 150V Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Case: SO8 Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Drain current: 3.1A кількість в упаковці: 1 шт |
на замовлення 2454 шт: термін постачання 14-21 дні (днів) |
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FDS2582 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8 Mounting: SMD On-state resistance: 146mΩ Type of transistor: N-MOSFET Drain-source voltage: 150V Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Case: SO8 Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Drain current: 2.6A кількість в упаковці: 1 шт |
на замовлення 907 шт: термін постачання 14-21 дні (днів) |
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FDS2670 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 20A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Pulsed drain current: 20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 275mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
FDN5632N-F085 |
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Виробник: ONSEMI
FDN5632N-F085 SMD N channel transistors
FDN5632N-F085 SMD N channel transistors
на замовлення 1885 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.75 грн |
41+ | 24.83 грн |
113+ | 23.52 грн |
FDN8601 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.5W; SuperSOT-3
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 183mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-3
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.5W; SuperSOT-3
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 183mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-3
кількість в упаковці: 1 шт
товар відсутній
FDN86265P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.8A; 1.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -0.8A
Power dissipation: 1.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.8A; 1.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -0.8A
Power dissipation: 1.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP030N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP038AN06A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 299.27 грн |
3+ | 259.63 грн |
6+ | 200.36 грн |
15+ | 189.04 грн |
250+ | 185.55 грн |
FDP047AN08A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 263.62 грн |
3+ | 228.88 грн |
6+ | 175.1 грн |
17+ | 165.52 грн |
FDP047N08-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 116A; Idm: 656A; 168W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 168W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 116A; Idm: 656A; 168W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 168W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 197.95 грн |
3+ | 171.88 грн |
8+ | 131.54 грн |
22+ | 124.57 грн |
250+ | 120.22 грн |
FDP050AN06A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Technology: PowerTrench®
Case: TO220AB
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 245W
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 18A
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Technology: PowerTrench®
Case: TO220AB
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 245W
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 18A
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
FDP060AN08A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 255W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 255W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 236.41 грн |
3+ | 204.45 грн |
7+ | 150.71 грн |
19+ | 142.87 грн |
250+ | 140.25 грн |
FDP075N15A-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 598.54 грн |
3+ | 403.47 грн |
8+ | 367.62 грн |
FDP083N15A-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 294W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 294W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 369.63 грн |
4+ | 275.01 грн |
11+ | 250.02 грн |
100+ | 249.15 грн |
250+ | 239.56 грн |
FDP16AN08A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 44A; 135W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 44A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 44A; 135W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 44A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP18N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 224.22 грн |
3+ | 195.4 грн |
7+ | 149.84 грн |
19+ | 142 грн |
50+ | 140.25 грн |
250+ | 135.9 грн |
FDP20N50F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP22N50N |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 289.89 грн |
6+ | 204.45 грн |
15+ | 185.55 грн |
250+ | 177.71 грн |
FDP2532 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 107nC
Technology: PowerTrench®
Kind of channel: enhanced
Drain current: 56A
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 107nC
Technology: PowerTrench®
Kind of channel: enhanced
Drain current: 56A
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 48 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 289.89 грн |
6+ | 205.35 грн |
15+ | 186.42 грн |
FDP2552 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Kind of channel: enhanced
Drain current: 26A
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Kind of channel: enhanced
Drain current: 26A
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
FDP2572 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 34nC
Kind of channel: enhanced
Drain current: 20A
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 34nC
Kind of channel: enhanced
Drain current: 20A
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
FDP2614 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39.3A; 260W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 39.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 260W
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39.3A; 260W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 39.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 260W
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
на замовлення 82 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 393.09 грн |
3+ | 341.05 грн |
4+ | 262.21 грн |
11+ | 247.4 грн |
250+ | 238.69 грн |
FDP26N40 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 15.6A; 265W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 400V
Drain current: 15.6A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 15.6A; 265W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 400V
Drain current: 15.6A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
FDP2710 |
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Виробник: ONSEMI
FDP2710 THT N channel transistors
FDP2710 THT N channel transistors
на замовлення 36 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 364.94 грн |
5+ | 221.27 грн |
13+ | 209.95 грн |
FDP2D3N10C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3
Drain-source voltage: 100V
Drain current: 157A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 888A
Mounting: THT
Case: TO220-3
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 214W; TO220-3
Drain-source voltage: 100V
Drain current: 157A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 888A
Mounting: THT
Case: TO220-3
кількість в упаковці: 1 шт
товар відсутній
FDP33N25 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20.4A; Idm: 132A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20.4A
Pulsed drain current: 132A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20.4A; Idm: 132A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20.4A
Pulsed drain current: 132A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP3632 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 286.14 грн |
3+ | 248.78 грн |
6+ | 183.81 грн |
16+ | 173.36 грн |
FDP3651U |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 255W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 255W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
FDP3652 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP3682 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 95W; TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 23A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 95W; TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 23A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 143.54 грн |
3+ | 126.65 грн |
10+ | 108.02 грн |
12+ | 91.47 грн |
31+ | 86.24 грн |
FDP42AN15A0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 98 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 193.26 грн |
9+ | 128.46 грн |
23+ | 116.73 грн |
250+ | 114.99 грн |
FDP51N25 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 320W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 320W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 320W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 320W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP52N20 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP7030BL |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP75N08A |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 300A; 137W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 47A
Pulsed drain current: 300A
Power dissipation: 137W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 300A; 137W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 47A
Pulsed drain current: 300A
Power dissipation: 137W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP80N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP8860 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDP8880 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB
Mounting: THT
Power dissipation: 55W
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 19mΩ
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; 55W; TO220AB
Mounting: THT
Power dissipation: 55W
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 19mΩ
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
FDP8N50NZ |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDPF12N50T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 291 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 159.49 грн |
3+ | 138.41 грн |
10+ | 117.6 грн |
11+ | 101.92 грн |
28+ | 96.7 грн |
FDPF12N60NZ |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 78 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 164.18 грн |
10+ | 116.7 грн |
26+ | 106.28 грн |
100+ | 104.54 грн |
500+ | 102.79 грн |
FDPF14N30 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP
Drain-source voltage: 300V
Drain current: 8.4A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 56A
Mounting: THT
Case: TO220FP
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 8.4A; Idm: 56A; 35W; TO220FP
Drain-source voltage: 300V
Drain current: 8.4A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 56A
Mounting: THT
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
FDPF15N65 |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Pulsed drain current: 60A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 60A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Pulsed drain current: 60A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDPF16N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.6A; Idm: 64A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.6A
Pulsed drain current: 64A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.6A; Idm: 64A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.6A
Pulsed drain current: 64A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDPF16N50T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.6A; Idm: 64A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.6A
Pulsed drain current: 64A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.6A; Idm: 64A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.6A
Pulsed drain current: 64A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDPF18N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 255.18 грн |
3+ | 220.73 грн |
7+ | 162.9 грн |
18+ | 154.19 грн |
FDPF18N50T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDPF190N15A |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17.4A; Idm: 110A; 33W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Power dissipation: 33W
Pulsed drain current: 110A
Drain-source voltage: 150V
Drain current: 17.4A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17.4A; Idm: 110A; 33W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Power dissipation: 33W
Pulsed drain current: 110A
Drain-source voltage: 150V
Drain current: 17.4A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
FDPF20N50FT |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDPF20N50T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 59.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 38.5W
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 59.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDPF2D3N10C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Drain-source voltage: 100V
Drain current: 157A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 888A
Mounting: THT
Case: TO220FP
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Drain-source voltage: 100V
Drain current: 157A
On-state resistance: 2.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 152nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 888A
Mounting: THT
Case: TO220FP
кількість в упаковці: 1 шт
товар відсутній
FDPF320N06L |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
FDPF3860T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.7A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 38.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.7A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 38.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDPF390N15A |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 150V
Drain current: 10A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 22W
Polarisation: unipolar
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 60A; 22W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 150V
Drain current: 10A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 22W
Polarisation: unipolar
Gate charge: 18.6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.41 грн |
10+ | 101.92 грн |
12+ | 92.34 грн |
31+ | 87.11 грн |
250+ | 84.5 грн |
FDPF39N20 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 23.4A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 37W
Polarisation: unipolar
Gate charge: 49nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 23.4A; 37W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 200V
Drain current: 23.4A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 37W
Polarisation: unipolar
Gate charge: 49nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
FDPF51N25 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 48mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 38W; TO220FP
Case: TO220FP
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 48mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 168.87 грн |
3+ | 145.65 грн |
10+ | 108.89 грн |
26+ | 102.79 грн |
FDPF55N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Pulsed drain current: 220A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Pulsed drain current: 220A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 97 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 112.18 грн |
10+ | 94.95 грн |
12+ | 90.6 грн |
31+ | 86.24 грн |
250+ | 82.76 грн |
FDS2572 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Mounting: SMD
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Case: SO8
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 3.1A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Mounting: SMD
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Case: SO8
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 3.1A
кількість в упаковці: 1 шт
на замовлення 2454 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 129.46 грн |
5+ | 113.08 грн |
13+ | 82.76 грн |
34+ | 78.4 грн |
FDS2582 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Mounting: SMD
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Case: SO8
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 2.6A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Mounting: SMD
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Drain-source voltage: 150V
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Case: SO8
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 2.6A
кількість в упаковці: 1 шт
на замовлення 907 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 88.19 грн |
5+ | 74.18 грн |
19+ | 54.01 грн |
51+ | 51.4 грн |
FDS2670 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній