| Фото | Назва | Виробник | Інформація |
Доступність |
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NLSX3018DTR2G | ONSEMI |
 Category: Level translatorsDescription: IC: digital; Ch: 8; 0.9÷4.5VDC; SMD; TSSOP20; -40÷85°C; reel,tape Frequency: 110MHz Operating temperature: -40...85°C Number of channels: 8 Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Supply voltage: 0.9...4.5V DC Number of outputs: 8 Number of inputs: 8 Case: TSSOP20 Mounting: SMD Kind of package: reel; tape Integrated circuit features: auto-direction sensing |
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| 2SD1816S-TL-E | ONSEMI |
Category: Transistors - Unclassified Description: 2SD1816S-TL-E |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
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1N4005G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
на замовлення 2457 шт: термін постачання 21-30 дні (днів) |
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MM3Z8V2ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Semiconductor structure: single diode Case: SOD323 Mounting: SMD Kind of package: reel; tape Tolerance: ±2% Zener voltage: 8.2V Power dissipation: 0.3W |
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| FDMC86139P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8 Kind of package: reel; tape Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.104Ω Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 |
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30A02CH-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.7A Power dissipation: 0.7W Case: SOT23 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 520MHz |
на замовлення 1300 шт: термін постачання 21-30 дні (днів) |
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50A02MH-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.6W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.6W Case: SC70; SOT323 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 690MHz |
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| NCP1076BAP100G | ONSEMI |
Category: Integrated circuits - Unclassified Description: IC: PMIC |
на замовлення 395 шт: термін постачання 21-30 дні (днів) |
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| NCP1077BAP100G | ONSEMI |
Category: Integrated circuits - Unclassified Description: NCP1077BAP100G |
на замовлення 270 шт: термін постачання 21-30 дні (днів) |
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LM2904M | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.3V/μs Operating temperature: -40...85°C Input offset voltage: 10mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Input bias current: 50nA Input offset current: 45...200nA |
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| FCPF380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 508 шт: термін постачання 21-30 дні (днів) |
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| CPH6337-TL-W | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
на замовлення 2639 шт: термін постачання 21-30 дні (днів) |
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| FXLH1T45L6X | ONSEMI |
Category: Level translators Description: IC: digital; 1bit,3-state,bidirectional,translator; Ch: 1; SMD Supply voltage: 1.1...3.6V DC Operating temperature: -40...125°C Case: SIP6 Mounting: SMD Kind of integrated circuit: 1bit; 3-state; bidirectional; translator Kind of output: 3-state Kind of package: reel; tape Number of channels: 1 Type of integrated circuit: digital |
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SM15T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; SOT23-3 Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double Max. off-state voltage: 15V Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.3kW Max. forward impulse current: 10A Breakdown voltage: 16.7V Leakage current: 1µA Type of diode: TVS array |
на замовлення 640 шт: термін постачання 21-30 дні (днів) |
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NTR5103NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.42W; SOT23 Drain-source voltage: 60V Drain current: 0.31A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.81nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: SMD Case: SOT23 |
на замовлення 13190 шт: термін постачання 21-30 дні (днів) |
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1N4148 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 75V; 450mA; bulk,tape; DO35; Ufmax: 1V; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 450mA Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Max. forward voltage: 1V Max. load current: 0.2A Kind of package: bulk; tape |
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1N4148 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: bulk |
на замовлення 5985 шт: термін постачання 21-30 дні (днів) |
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6N139SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 400-2000%@0.5mA Case: Gull wing 8 Slew rate: 10kV/μs Manufacturer series: 6N139M |
на замовлення 506 шт: термін постачання 21-30 дні (днів) |
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| FQU12N20TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced |
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FPF2116 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; SOT23-5; reel,tape; -40÷125°C Type of integrated circuit: power switch Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Integrated circuit features: thermal protection; undervoltage protection Number of channels: 1 Supply voltage: 1.8...5.5V DC Active logical level: high Operating temperature: -40...125°C On-state resistance: 0.15Ω |
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| SZBZX84C13ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener Type of diode: Zener |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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| FOD8320 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs Mounting: SMD Case: SOP5 Slew rate: 50kV/μs Type of optocoupler: optocoupler Max. off-state voltage: 5V Turn-on time: 60ns Turn-off time: 60ns Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV |
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| SBRD8320G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 3A; DPAK; tube Mounting: SMD Case: DPAK Kind of package: tube Type of diode: Schottky rectifying Max. off-state voltage: 20V Max. forward voltage: 0.7V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 75A |
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| KSC5502DTM | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 600V; 2A; 50W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Frequency: 11MHz Power dissipation: 50W Polarisation: bipolar Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 4A Type of transistor: NPN Collector current: 2A |
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| KSC5502TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 600V; 2A; 50W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Power dissipation: 50W Polarisation: bipolar Pulsed collector current: 4A Type of transistor: NPN Collector current: 2A |
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| KSA708YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Polarisation: bipolar Kind of package: bulk Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 Collector current: 0.7A Type of transistor: PNP Case: TO92 Power dissipation: 0.8W |
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| NSR05301MX4T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 4732 шт: термін постачання 21-30 дні (днів) |
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| KSA1281YTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92L Kind of package: Ammo Pack Mounting: THT Case: TO92L Frequency: 100MHz Collector-emitter voltage: 50V Collector current: 2A Type of transistor: PNP Power dissipation: 1W Polarisation: bipolar |
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NCV7329D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷18VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 5...18V DC |
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NCV7349D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC |
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NCV7349D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
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NCV7428D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; system basis chip SBC; 3.3÷5VDC; SMD; SO8 Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Application: automotive industry Integrated circuit features: integrated voltage regulator; LIN transceiver Kind of integrated circuit: system basis chip SBC Supply voltage: 3.3...5V DC |
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| MC74VHCT373ADTRG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Manufacturer series: VHCT Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Family: VHCT |
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| MC74VHCT373ADWRG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO20WB Manufacturer series: VHCT Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Family: VHCT |
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FDP060AN08A0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 255W; TO220-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 255W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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| NCP705MT30TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; WDFN6; SMD Operating temperature: -40...125°C Manufacturer series: NCP705 Mounting: SMD Voltage drop: 0.35V Type of integrated circuit: voltage regulator Number of channels: 1 Output voltage: 3V Input voltage: 2.5...5.5V Tolerance: ±2% Case: WDFN6 Kind of voltage regulator: fixed; LDO; linear Output current: 0.5A |
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SMBJ5V0A | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.7V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape |
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FQD12N20L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 2.5W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Power dissipation: 2.5W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
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| FCH070N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhanced |
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| NCP1599GEVB | ONSEMI |
Category: Development kits - Unclassified Description: Dev.kit: evaluation |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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NRVS1AFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A Mounting: SMD Max. forward impulse current: 30A Case: SOD123F Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 50V Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 2µs Application: automotive industry |
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| MOC3163SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3163M; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: PDIP6 Max. off-state voltage: 6V Trigger current: 5mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3163M Slew rate: 1kV/μs |
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H11G1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms |
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NRVHP140SFT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 40ns; SOD123; Ufmax: 1.4V; Ifsm: 25A Mounting: SMD Application: automotive industry Case: SOD123 Max. forward impulse current: 25A Reverse recovery time: 40ns Semiconductor structure: single diode Load current: 1A Max. forward voltage: 1.4V Kind of package: reel; tape Type of diode: rectifying Max. load current: 2A Max. off-state voltage: 0.4kV |
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NRVHP220SFT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123; Ufmax: 1.05V Mounting: SMD Application: automotive industry Case: SOD123 Max. forward impulse current: 40A Reverse recovery time: 50ns Semiconductor structure: single diode Load current: 2A Max. forward voltage: 1.05V Kind of package: reel; tape Type of diode: rectifying Max. load current: 4A Max. off-state voltage: 200V |
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NRVTS245ESFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 2A; SOD123F; reel,tape Mounting: SMD Application: automotive industry Case: SOD123F Max. forward impulse current: 50A Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.65V Kind of package: reel; tape Type of diode: Schottky rectifying Max. load current: 4A Max. off-state voltage: 45V |
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NRVTS2H60ESFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape Mounting: SMD Application: automotive industry Case: SOD123F Max. forward impulse current: 50A Semiconductor structure: single diode Load current: 2A Max. forward voltage: 0.65V Kind of package: reel; tape Type of diode: Schottky rectifying Max. load current: 4A Max. off-state voltage: 60V |
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2N7002W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.2W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2003 шт: термін постачання 21-30 дні (днів) |
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| FDMC86160ET100 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Pulsed drain current: 204A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC86570LET60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 436A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhanced |
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SBCP56T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
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UC3842BDG | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 16...36V Duty cycle factor: 0...96% Kind of package: tube Power: 862mW Operating voltage: 10...36V |
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| FCPF190N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
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| NLU2G14MUTCG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA Operating temperature: -55...125°C Mounting: SMD Supply voltage: 1.65...5.5V DC Number of inputs: 1 Kind of gate: NOT Technology: CMOS Case: uDFN6 Type of integrated circuit: digital Number of channels: dual; 2 Quiescent current: 40µA Kind of package: reel; tape Kind of input: with Schmitt trigger |
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| NCP511SN18T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 1.8V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.8...6V Manufacturer series: NCP511 |
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| NCP139AFCT110T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 80mV Output voltage: 1.1V Output current: 1A Case: WLCSP6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.1...5.5V Manufacturer series: NCP139 |
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| FSUSB242GEVB | ONSEMI |
Category: Microchip development kits Description: Dev.kit: STM32 Type of development kit: STM32 |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| NCP177BMX070TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.7V; 500mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 0.7V Output current: 0.5A Case: XDFN4 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.6...5.5V Manufacturer series: NCP177 |
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 |
SB5100 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5A; 5W; DO201; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A Power dissipation: 5W Semiconductor structure: single diode Capacitance: 380pF Case: DO201 Kind of package: reel; tape Max. forward impulse current: 150A |
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|
74VHC14M | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Kind of input: with Schmitt trigger |
товар відсутній |
| NLSX3018DTR2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 8; 0.9÷4.5VDC; SMD; TSSOP20; -40÷85°C; reel,tape
Frequency: 110MHz
Operating temperature: -40...85°C
Number of channels: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Supply voltage: 0.9...4.5V DC
Number of outputs: 8
Number of inputs: 8
Case: TSSOP20
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: auto-direction sensing
Category: Level translators
Description: IC: digital; Ch: 8; 0.9÷4.5VDC; SMD; TSSOP20; -40÷85°C; reel,tape
Frequency: 110MHz
Operating temperature: -40...85°C
Number of channels: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Supply voltage: 0.9...4.5V DC
Number of outputs: 8
Number of inputs: 8
Case: TSSOP20
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: auto-direction sensing
товар відсутній
| 2SD1816S-TL-E |
|
на замовлення 700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 66+ | 45.27 грн |
| 650+ | 36.73 грн |
| 1N4005G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 2457 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 17.98 грн |
| 29+ | 12.78 грн |
| 40+ | 9.18 грн |
| 100+ | 6.68 грн |
| 349+ | 2.42 грн |
| 958+ | 2.29 грн |
| MM3Z8V2ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±2%
Zener voltage: 8.2V
Power dissipation: 0.3W
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±2%
Zener voltage: 8.2V
Power dissipation: 0.3W
товар відсутній
| FDMC86139P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.104Ω
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.104Ω
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: WDFN8
товар відсутній
| 30A02CH-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.7A
Power dissipation: 0.7W
Case: SOT23
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.7A
Power dissipation: 0.7W
Case: SOT23
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.64 грн |
| 30+ | 12.7 грн |
| 90+ | 9.82 грн |
| 240+ | 9.28 грн |
| 50A02MH-TL-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.6W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.6W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 690MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.6W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.6W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 690MHz
товар відсутній
| NCP1076BAP100G |
|
на замовлення 395 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 33+ | 93.03 грн |
| 350+ | 73.32 грн |
| NCP1077BAP100G |
|
на замовлення 270 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 93.03 грн |
| LM2904M |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...85°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...85°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Input bias current: 50nA
Input offset current: 45...200nA
товар відсутній
| FCPF380N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 508 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 142.29 грн |
| 250+ | 114.7 грн |
| CPH6337-TL-W |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
на замовлення 2639 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 188+ | 13.99 грн |
| 1800+ | 12.56 грн |
| FXLH1T45L6X |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 1bit,3-state,bidirectional,translator; Ch: 1; SMD
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...125°C
Case: SIP6
Mounting: SMD
Kind of integrated circuit: 1bit; 3-state; bidirectional; translator
Kind of output: 3-state
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; 1bit,3-state,bidirectional,translator; Ch: 1; SMD
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...125°C
Case: SIP6
Mounting: SMD
Kind of integrated circuit: 1bit; 3-state; bidirectional; translator
Kind of output: 3-state
Kind of package: reel; tape
Number of channels: 1
Type of integrated circuit: digital
товар відсутній
| SM15T1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; SOT23-3
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.3kW
Max. forward impulse current: 10A
Breakdown voltage: 16.7V
Leakage current: 1µA
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; SOT23-3
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 15V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.3kW
Max. forward impulse current: 10A
Breakdown voltage: 16.7V
Leakage current: 1µA
Type of diode: TVS array
на замовлення 640 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.2 грн |
| 30+ | 14.37 грн |
| 80+ | 10.94 грн |
| 215+ | 10.35 грн |
| NTR5103NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.42W; SOT23
Drain-source voltage: 60V
Drain current: 0.31A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.81nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.42W; SOT23
Drain-source voltage: 60V
Drain current: 0.31A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.81nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: SOT23
на замовлення 13190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 15.64 грн |
| 37+ | 10.02 грн |
| 100+ | 4.68 грн |
| 397+ | 2.11 грн |
| 1092+ | 1.99 грн |
| 1N4148 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 450mA; bulk,tape; DO35; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 450mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.2A
Kind of package: bulk; tape
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 450mA; bulk,tape; DO35; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 450mA
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.2A
Kind of package: bulk; tape
товар відсутній
| 1N4148 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: bulk
на замовлення 5985 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 59+ | 6.66 грн |
| 100+ | 3.63 грн |
| 133+ | 2.73 грн |
| 215+ | 1.69 грн |
| 500+ | 1.04 грн |
| 1000+ | 0.88 грн |
| 1313+ | 0.65 грн |
| 3612+ | 0.62 грн |
| 6N139SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
на замовлення 506 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.6 грн |
| 17+ | 51.54 грн |
| 46+ | 48.64 грн |
| FQU12N20TU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FPF2116 |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; SOT23-5; reel,tape; -40÷125°C
Type of integrated circuit: power switch
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: thermal protection; undervoltage protection
Number of channels: 1
Supply voltage: 1.8...5.5V DC
Active logical level: high
Operating temperature: -40...125°C
On-state resistance: 0.15Ω
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; SOT23-5; reel,tape; -40÷125°C
Type of integrated circuit: power switch
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Integrated circuit features: thermal protection; undervoltage protection
Number of channels: 1
Supply voltage: 1.8...5.5V DC
Active logical level: high
Operating temperature: -40...125°C
On-state resistance: 0.15Ω
товар відсутній
| SZBZX84C13ET1G |
|
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 926+ | 2.67 грн |
| 9000+ | 2.42 грн |
| FOD8320 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Mounting: SMD
Case: SOP5
Slew rate: 50kV/μs
Type of optocoupler: optocoupler
Max. off-state voltage: 5V
Turn-on time: 60ns
Turn-off time: 60ns
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Mounting: SMD
Case: SOP5
Slew rate: 50kV/μs
Type of optocoupler: optocoupler
Max. off-state voltage: 5V
Turn-on time: 60ns
Turn-off time: 60ns
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
товар відсутній
| SBRD8320G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; DPAK; tube
Mounting: SMD
Case: DPAK
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.7V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; DPAK; tube
Mounting: SMD
Case: DPAK
Kind of package: tube
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.7V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 75A
товар відсутній
| KSC5502DTM |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 50W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Frequency: 11MHz
Power dissipation: 50W
Polarisation: bipolar
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 4A
Type of transistor: NPN
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 50W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Frequency: 11MHz
Power dissipation: 50W
Polarisation: bipolar
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 4A
Type of transistor: NPN
Collector current: 2A
товар відсутній
| KSC5502TU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 50W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Power dissipation: 50W
Polarisation: bipolar
Pulsed collector current: 4A
Type of transistor: NPN
Collector current: 2A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 600V; 2A; 50W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Power dissipation: 50W
Polarisation: bipolar
Pulsed collector current: 4A
Type of transistor: NPN
Collector current: 2A
товар відсутній
| KSA708YBU |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Polarisation: bipolar
Kind of package: bulk
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: PNP
Case: TO92
Power dissipation: 0.8W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Polarisation: bipolar
Kind of package: bulk
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Collector current: 0.7A
Type of transistor: PNP
Case: TO92
Power dissipation: 0.8W
товар відсутній
| NSR05301MX4T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 4732 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 374+ | 7.04 грн |
| 3700+ | 6.24 грн |
| KSA1281YTA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92L
Kind of package: Ammo Pack
Mounting: THT
Case: TO92L
Frequency: 100MHz
Collector-emitter voltage: 50V
Collector current: 2A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92L
Kind of package: Ammo Pack
Mounting: THT
Case: TO92L
Frequency: 100MHz
Collector-emitter voltage: 50V
Collector current: 2A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
товар відсутній
| NCV7329D10R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...18V DC
товар відсутній
| NCV7349D10R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
товар відсутній
| NCV7349D13R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
товар відсутній
| NCV7428D13R2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 3.3÷5VDC; SMD; SO8
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Integrated circuit features: integrated voltage regulator; LIN transceiver
Kind of integrated circuit: system basis chip SBC
Supply voltage: 3.3...5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 3.3÷5VDC; SMD; SO8
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Integrated circuit features: integrated voltage regulator; LIN transceiver
Kind of integrated circuit: system basis chip SBC
Supply voltage: 3.3...5V DC
товар відсутній
| MC74VHCT373ADTRG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: VHCT
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: VHCT
товар відсутній
| MC74VHCT373ADWRG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20WB
Manufacturer series: VHCT
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: VHCT
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20WB
Manufacturer series: VHCT
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: VHCT
товар відсутній
| FDP060AN08A0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 255W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 255W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.01 грн |
| 3+ | 164.06 грн |
| 7+ | 125.59 грн |
| 19+ | 119.06 грн |
| NCP705MT30TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP705
Mounting: SMD
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3V
Input voltage: 2.5...5.5V
Tolerance: ±2%
Case: WDFN6
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP705
Mounting: SMD
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3V
Input voltage: 2.5...5.5V
Tolerance: ±2%
Case: WDFN6
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.5A
товар відсутній
| SMBJ5V0A |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
товар відсутній
| FQD12N20L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 2.5W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 2.5W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 2.5W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 2.5W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| FCH070N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NCP1599GEVB |
|
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4793.18 грн |
| 6+ | 3845.36 грн |
| NRVS1AFL |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Case: SOD123F
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 2µs
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 2us; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Case: SOD123F
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 50V
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 2µs
Application: automotive industry
товар відсутній
| MOC3163SM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3163M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3163M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
товар відсутній
| H11G1M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
товар відсутній
| NRVHP140SFT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 40ns; SOD123; Ufmax: 1.4V; Ifsm: 25A
Mounting: SMD
Application: automotive industry
Case: SOD123
Max. forward impulse current: 25A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.4V
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 2A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 40ns; SOD123; Ufmax: 1.4V; Ifsm: 25A
Mounting: SMD
Application: automotive industry
Case: SOD123
Max. forward impulse current: 25A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.4V
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 2A
Max. off-state voltage: 0.4kV
товар відсутній
| NRVHP220SFT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123; Ufmax: 1.05V
Mounting: SMD
Application: automotive industry
Case: SOD123
Max. forward impulse current: 40A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 1.05V
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 4A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 50ns; SOD123; Ufmax: 1.05V
Mounting: SMD
Application: automotive industry
Case: SOD123
Max. forward impulse current: 40A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 1.05V
Kind of package: reel; tape
Type of diode: rectifying
Max. load current: 4A
Max. off-state voltage: 200V
товар відсутній
| NRVTS245ESFT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; SOD123F; reel,tape
Mounting: SMD
Application: automotive industry
Case: SOD123F
Max. forward impulse current: 50A
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.65V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. load current: 4A
Max. off-state voltage: 45V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 2A; SOD123F; reel,tape
Mounting: SMD
Application: automotive industry
Case: SOD123F
Max. forward impulse current: 50A
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.65V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. load current: 4A
Max. off-state voltage: 45V
товар відсутній
| NRVTS2H60ESFT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Application: automotive industry
Case: SOD123F
Max. forward impulse current: 50A
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.65V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. load current: 4A
Max. off-state voltage: 60V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Application: automotive industry
Case: SOD123F
Max. forward impulse current: 50A
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.65V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. load current: 4A
Max. off-state voltage: 60V
товар відсутній
| 2N7002W |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.2W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.2W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2003 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 49+ | 8.05 грн |
| 61+ | 6.03 грн |
| 183+ | 4.65 грн |
| 502+ | 4.43 грн |
| FDMC86160ET100 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Pulsed drain current: 204A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Pulsed drain current: 204A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC86570LET60 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SBCP56T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
товар відсутній
| UC3842BDG |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 862mW
Operating voltage: 10...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 16...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 862mW
Operating voltage: 10...36V
товар відсутній
| FCPF190N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 121 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 282.23 грн |
| 99+ | 235.93 грн |
| NLU2G14MUTCG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Number of inputs: 1
Kind of gate: NOT
Technology: CMOS
Case: uDFN6
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 40µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; uDFN6; 1.65÷5.5VDC; 40uA
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Number of inputs: 1
Kind of gate: NOT
Technology: CMOS
Case: uDFN6
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 40µA
Kind of package: reel; tape
Kind of input: with Schmitt trigger
товар відсутній
| NCP511SN18T1G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.8...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.8...6V
Manufacturer series: NCP511
товар відсутній
| NCP139AFCT110T2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 1.1V
Output current: 1A
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.1...5.5V
Manufacturer series: NCP139
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 1.1V
Output current: 1A
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.1...5.5V
Manufacturer series: NCP139
товар відсутній
| FSUSB242GEVB |
|
Виробник: ONSEMI
Category: Microchip development kits
Description: Dev.kit: STM32
Type of development kit: STM32
Category: Microchip development kits
Description: Dev.kit: STM32
Type of development kit: STM32
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8551.26 грн |
| NCP177BMX070TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.7V; 500mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.7V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.6...5.5V
Manufacturer series: NCP177
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.7V; 500mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.7V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.6...5.5V
Manufacturer series: NCP177
товар відсутній
| SB5100 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; 5W; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Power dissipation: 5W
Semiconductor structure: single diode
Capacitance: 380pF
Case: DO201
Kind of package: reel; tape
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; 5W; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Power dissipation: 5W
Semiconductor structure: single diode
Capacitance: 380pF
Case: DO201
Kind of package: reel; tape
Max. forward impulse current: 150A
товар відсутній
| 74VHC14M | |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
товар відсутній