| Фото | Назва | Виробник | Інформація |
Доступність |
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EMC5DXV5T1G | ONSEMI |
 Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.5W; SOT553 Mounting: SMD Case: SOT553 Power dissipation: 0.5W Kind of transistor: BRT Base resistor: 47/4.7kΩ Base-emitter resistor: 47/10kΩ Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Semiconductor structure: common base-collector Type of transistor: NPN / PNP Kind of package: reel; tape |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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| EMG2DXV5T5G | ONSEMI |
EMG2DXV5T5G NPN SMD transistors |
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| EMI9408MUTAG | ONSEMI |
EMI9408MUTAG-ONS Diodes - Unclassified |
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ES1A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Capacitance: 7pF Max. forward impulse current: 30A Leakage current: 0.1mA Case: SMA Kind of package: reel; tape Reverse recovery time: 15ns Max. forward voltage: 0.92V Type of diode: rectifying Features of semiconductor devices: fast switching Max. off-state voltage: 50V Power dissipation: 1.47W Load current: 1A Semiconductor structure: single diode кількість в упаковці: 5 шт |
на замовлення 6145 шт: термін постачання 14-21 дні (днів) |
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| ES1B | ONSEMI |
ES1B-ONS SMD universal diodes |
на замовлення 580 шт: термін постачання 14-21 дні (днів) |
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ES1C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Capacitance: 7pF Max. forward impulse current: 30A Leakage current: 0.1mA Case: SMA Kind of package: reel; tape Power dissipation: 1.47W Type of diode: rectifying Features of semiconductor devices: fast switching Max. off-state voltage: 150V Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 15ns кількість в упаковці: 5 шт |
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| ES1D | ONSEMI |
ES1D-ONS SMD universal diodes |
на замовлення 7530 шт: термін постачання 14-21 дні (днів) |
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ES1F | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 1.47W Kind of package: reel; tape кількість в упаковці: 5 шт |
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ES1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 1.47W Kind of package: reel; tape кількість в упаковці: 5 шт |
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ES1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8pF Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 1.47W Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 6745 шт: термін постачання 14-21 дні (днів) |
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| ES2A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Power dissipation: 1.66W Kind of package: reel; tape кількість в упаковці: 5 шт |
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| ES2B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Case: SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 20ns Max. forward impulse current: 50A Leakage current: 0.35mA Power dissipation: 1.66W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: SMD кількість в упаковці: 5 шт |
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| ES2C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Power dissipation: 1.66W Kind of package: reel; tape кількість в упаковці: 5 шт |
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ES2D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Power dissipation: 1.66W Kind of package: reel; tape кількість в упаковці: 5 шт |
на замовлення 773 шт: термін постачання 14-21 дні (днів) |
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| ES3A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.5mA Power dissipation: 1.66W Kind of package: reel; tape кількість в упаковці: 1 шт |
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ES3B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Power dissipation: 1.66W Kind of package: reel; tape кількість в упаковці: 1 шт |
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| ES3C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Leakage current: 0.5mA Power dissipation: 1.66W Kind of package: reel; tape кількість в упаковці: 1 шт |
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ES3D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Power dissipation: 1.66W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 4780 шт: термін постачання 14-21 дні (днів) |
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ES3J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 45pF Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Power dissipation: 1.66W Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1510 шт: термін постачання 14-21 дні (днів) |
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ESD5B5.0ST1G | ONSEMI |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.2W Max. off-state voltage: 5V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 513 шт: термін постачання 14-21 дні (днів) |
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ESD5Z12T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 240W Max. off-state voltage: 12V Breakdown voltage: 14.1V Max. forward impulse current: 9.6A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 548 шт: термін постачання 14-21 дні (днів) |
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ESD5Z2.5T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 120W Max. off-state voltage: 2.5V Breakdown voltage: 4V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 6µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 1461 шт: термін постачання 14-21 дні (днів) |
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ESD5Z3.3T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 158W; 5V; 11.2A; unidirectional; SOD523; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 158W Max. off-state voltage: 3.3V Breakdown voltage: 5V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 2445 шт: термін постачання 14-21 дні (днів) |
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ESD5Z5.0T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 174W; 6.2V; 9.4A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 174W Max. off-state voltage: 5V Breakdown voltage: 6.2V Max. forward impulse current: 9.4A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 5665 шт: термін постачання 14-21 дні (днів) |
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ESD5Z6.0T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 181W Max. off-state voltage: 6V Breakdown voltage: 6.8V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 7435 шт: термін постачання 14-21 дні (днів) |
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ESD5Z7.0T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 7V Breakdown voltage: 7.5V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 2050 шт: термін постачання 14-21 дні (днів) |
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ESD7351HT1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 5V; SOD323; reel,tape; Features: ESD protection Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD323 Mounting: SMD Leakage current: 1nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Capacitance: 0.43...0.6pF кількість в упаковці: 5 шт |
на замовлення 1605 шт: термін постачання 14-21 дні (днів) |
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ESD7351XV2T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; Features: ESD protection Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD523 Mounting: SMD Leakage current: 1nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Capacitance: 0.43...0.6pF кількість в упаковці: 10 шт |
на замовлення 2980 шт: термін постачання 14-21 дні (днів) |
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| ESD7371HT1G | ONSEMI |
ESD7371HT1G Unidirectional SMD transil diodes |
на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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ESD7371P2T5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.3W; 7V; SOD923; reel,tape; Features: ESD protection Mounting: SMD Type of diode: TVS Breakdown voltage: 7V Leakage current: 50nA Number of channels: 1 Kind of package: reel; tape Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.3W Case: SOD923 Max. off-state voltage: 5.3V кількість в упаковці: 5 шт |
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| ESD7383NCTBG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3 Type of diode: TVS array Breakdown voltage: 6V Peak pulse power dissipation: 50W Mounting: SMD Case: WLCSP4 Max. off-state voltage: 3...5.5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 3 Kind of package: reel; tape Capacitance: 1.5pF кількість в упаковці: 1 шт |
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| ESD7461N2T5G | ONSEMI |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; Ch: 1 Capacitance: 0.3pF Max. off-state voltage: 16V Semiconductor structure: bidirectional Breakdown voltage: 16.5V Leakage current: 0.1µA Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.3W Mounting: SMD Case: XDFN2 кількість в упаковці: 5 шт |
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| ESD7504MUTAG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 5V Mounting: SMD Case: uDFN10 Max. off-state voltage: 3.3V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Capacitance: 0.55pF кількість в упаковці: 5 шт |
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ESD7551N2T5G | ONSEMI |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; Ch: 1 Case: CASE714AB; X2DFN2 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Max. off-state voltage: 3.3V Leakage current: 50nA Capacitance: 0.22...0.35pF Type of diode: TVS Breakdown voltage: 5V Peak pulse power dissipation: 0.25W Features of semiconductor devices: ESD protection кількість в упаковці: 10 шт |
на замовлення 1560 шт: термін постачання 14-21 дні (днів) |
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| ESD7571N2T5G | ONSEMI |
ESD7571N2T5G Bidirectional SMD transil diodes |
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| ESD7C3.3DT5G | ONSEMI |
ESD7C3.3DT5G Transil diodes - arrays |
на замовлення 7285 шт: термін постачання 14-21 дні (днів) |
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| ESD7C5.0DT5G | ONSEMI |
ESD7C5.0DT5G Transil diodes - arrays |
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| ESD7L5.0DT5G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.4V; 0.15W; double,common anode; SOT723; Ch: 2 Type of diode: TVS array Breakdown voltage: 5.4V Peak pulse power dissipation: 0.15W Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 2 Kind of package: reel; tape Capacitance: 0.5...0.9pF кількість в упаковці: 1 шт |
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| ESD8008MUTAG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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ESD8351XV2T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1 Mounting: SMD Max. off-state voltage: 3.3V Breakdown voltage: 7V Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Case: SOD523 кількість в упаковці: 10 шт |
на замовлення 289 шт: термін постачання 14-21 дні (днів) |
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ESD9101P2T5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 7V Case: SOD923 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 10 шт |
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ESD9B3.3ST5G | ONSEMI |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.3W Max. off-state voltage: 3.3V Breakdown voltage: 5...7V Case: SOD923 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Capacitance: 15pF кількість в упаковці: 25 шт |
на замовлення 6900 шт: термін постачання 14-21 дні (днів) |
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ESD9B5.0ST5G | ONSEMI |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.3W Max. off-state voltage: 5V Breakdown voltage: 7.8V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 1508 шт: термін постачання 14-21 дні (днів) |
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ESD9C3.3ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1 Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD923 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 10 шт |
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ESD9L3.3ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 4.8V Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Capacitance: 0.5...0.9pF кількість в упаковці: 5 шт |
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ESD9L5.0ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 5V Breakdown voltage: 5.4V Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 5238 шт: термін постачання 14-21 дні (днів) |
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ESD9R3.3ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 4.8V Max. forward impulse current: 1A Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Leakage current: 1nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 1 шт |
на замовлення 9336 шт: термін постачання 14-21 дні (днів) |
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ESD9X12ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 13.5V; SOD923; reel,tape; Ch: 1; 30pF Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 12V Breakdown voltage: 13.5V Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Capacitance: 30pF кількість в упаковці: 20 шт |
товар відсутній |
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ESD9X5.0ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 5V Breakdown voltage: 6.2V Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 кількість в упаковці: 10 шт |
на замовлення 3270 шт: термін постачання 14-21 дні (днів) |
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ESDONCAN1LT1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 26.2÷32V; 3A; 0.2W; bidirectional,double; SOT23 Type of diode: TVS array Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: bidirectional; double Features of semiconductor devices: ESD protection Capacitance: 10pF Case: SOT23 Max. forward impulse current: 3A Leakage current: 0.1µA Kind of package: reel; tape Application: CAN Peak pulse power dissipation: 0.2W Breakdown voltage: 26.2...32V Number of channels: 2 кількість в упаковці: 5 шт |
товар відсутній |
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| ESDR0502BT1G | ONSEMI |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 5.8V; 1A; bidirectional; SC75; reel,tape Case: SC75 Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Max. forward impulse current: 1A Breakdown voltage: 5.8V Leakage current: 1µA Type of diode: TVS Peak pulse power dissipation: 0.15W кількість в упаковці: 5 шт |
товар відсутній |
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| ESDR0502NMUTAG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3 Case: uDFN6 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Max. forward impulse current: 3A Breakdown voltage: 6V Leakage current: 1µA Number of channels: 3 Type of diode: TVS array кількість в упаковці: 5 шт |
товар відсутній |
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| EU-SIGFOX-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board Interface: GPIO; I2C; UART Kind of connector: pin header; pin strips; SMA development kits accessories features: Arduino Shield compatible; SIGFOX module кількість в упаковці: 1 шт |
товар відсутній |
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FAN3100CSX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC Mounting: SMD Output current: -1.8...2.5A Type of integrated circuit: driver Impulse rise time: 20ns Pulse fall time: 14ns Number of channels: 1 Kind of package: reel; tape Case: SOT23-5 Protection: undervoltage UVP Technology: MillerDrive™ Kind of integrated circuit: low-side; MOSFET gate driver кількість в упаковці: 1 шт |
на замовлення 2321 шт: термін постачання 14-21 дні (днів) |
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| FAN3100TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC Mounting: SMD Kind of output: non-inverting Output current: -2.5...1.8A Type of integrated circuit: driver Impulse rise time: 20ns Pulse fall time: 14ns Number of channels: 1 Kind of package: reel; tape Case: MLP6 Technology: MillerDrive™ Kind of integrated circuit: low-side; MOSFET gate driver кількість в упаковці: 1 шт |
товар відсутній |
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FAN3111CSX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Supply voltage: 4.5...18V DC Case: SOT23-5 Output current: -0.9...1.1A Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Number of channels: 1 Impulse rise time: 18ns Pulse fall time: 17ns Technology: MillerDrive™ кількість в упаковці: 1 шт |
на замовлення 1892 шт: термін постачання 14-21 дні (днів) |
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FAN3111ESX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Supply voltage: 4.5...18V DC Case: SOT23-5 Output current: -0.9...1.1A Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Number of channels: 1 Impulse rise time: 18ns Pulse fall time: 17ns Technology: MillerDrive™ кількість в упаковці: 1 шт |
на замовлення 2911 шт: термін постачання 14-21 дні (днів) |
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FAN3217TMX-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 22ns Pulse fall time: 17ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 1 шт |
товар відсутній |
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FAN3224CMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -4.3...2.8A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 17ns Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 1 шт |
товар відсутній |
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FAN3224TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -4.3...2.8A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 17ns Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 1 шт |
товар відсутній |
| EMC5DXV5T1G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.5W; SOT553
Mounting: SMD
Case: SOT553
Power dissipation: 0.5W
Kind of transistor: BRT
Base resistor: 47/4.7kΩ
Base-emitter resistor: 47/10kΩ
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Semiconductor structure: common base-collector
Type of transistor: NPN / PNP
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.5W; SOT553
Mounting: SMD
Case: SOT553
Power dissipation: 0.5W
Kind of transistor: BRT
Base resistor: 47/4.7kΩ
Base-emitter resistor: 47/10kΩ
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Semiconductor structure: common base-collector
Type of transistor: NPN / PNP
Kind of package: reel; tape
на замовлення 50 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 17.82 грн |
| 25+ | 13.03 грн |
| 100+ | 11.15 грн |
| 105+ | 9.1 грн |
| 285+ | 8.61 грн |
| ES1A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Max. forward impulse current: 30A
Leakage current: 0.1mA
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 15ns
Max. forward voltage: 0.92V
Type of diode: rectifying
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Power dissipation: 1.47W
Load current: 1A
Semiconductor structure: single diode
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Max. forward impulse current: 30A
Leakage current: 0.1mA
Case: SMA
Kind of package: reel; tape
Reverse recovery time: 15ns
Max. forward voltage: 0.92V
Type of diode: rectifying
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Power dissipation: 1.47W
Load current: 1A
Semiconductor structure: single diode
кількість в упаковці: 5 шт
на замовлення 6145 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 24.2 грн |
| 25+ | 13.21 грн |
| 100+ | 11.32 грн |
| 105+ | 9.82 грн |
| 290+ | 9.29 грн |
| ES1B |
|
Виробник: ONSEMI
ES1B-ONS SMD universal diodes
ES1B-ONS SMD universal diodes
на замовлення 580 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 20.55 грн |
| 130+ | 7.92 грн |
| 355+ | 7.48 грн |
| ES1C |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Max. forward impulse current: 30A
Leakage current: 0.1mA
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.47W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Max. forward impulse current: 30A
Leakage current: 0.1mA
Case: SMA
Kind of package: reel; tape
Power dissipation: 1.47W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
кількість в упаковці: 5 шт
товар відсутній
| ES1D |
|
Виробник: ONSEMI
ES1D-ONS SMD universal diodes
ES1D-ONS SMD universal diodes
на замовлення 7530 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 27.02 грн |
| 120+ | 8.61 грн |
| 325+ | 8.14 грн |
| ES1F |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| ES1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| ES1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 6745 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.58 грн |
| 25+ | 11.4 грн |
| 100+ | 9.84 грн |
| 120+ | 8.62 грн |
| 330+ | 8.19 грн |
| ES2A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| ES2B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Case: SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Case: SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 20ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
кількість в упаковці: 5 шт
товар відсутній
| ES2C |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| ES2D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 5 шт
на замовлення 773 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.2 грн |
| 25+ | 16.65 грн |
| 85+ | 12.2 грн |
| 230+ | 11.5 грн |
| ES3A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| ES3B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| ES3C |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| ES3D |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 4780 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.05 грн |
| 25+ | 22.34 грн |
| 62+ | 16.55 грн |
| 169+ | 15.59 грн |
| ES3J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 45pF
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Power dissipation: 1.66W
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1510 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.73 грн |
| 11+ | 26.23 грн |
| 25+ | 22.82 грн |
| 57+ | 18.12 грн |
| 155+ | 17.16 грн |
| 3000+ | 16.55 грн |
| ESD5B5.0ST1G | |
|
Виробник: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.2W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.2W; 6.8V; bidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.2W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 513 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 7.97 грн |
| 100+ | 4.67 грн |
| 328+ | 3.13 грн |
| 901+ | 2.95 грн |
| ESD5Z12T1G | |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 240W
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 240W
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 548 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 5.14 грн |
| 100+ | 3.76 грн |
| 250+ | 3.06 грн |
| 355+ | 2.88 грн |
| 975+ | 2.73 грн |
| 3000+ | 2.66 грн |
| ESD5Z2.5T1G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 1461 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 13.13 грн |
| 35+ | 7.87 грн |
| 44+ | 5.96 грн |
| 100+ | 4.88 грн |
| 250+ | 4.12 грн |
| 500+ | 3.47 грн |
| 644+ | 1.59 грн |
| ESD5Z3.3T1G | |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 158W; 5V; 11.2A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 158W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 158W; 5V; 11.2A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 158W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 2445 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 62+ | 4.54 грн |
| 100+ | 3.75 грн |
| 402+ | 2.54 грн |
| 1104+ | 2.4 грн |
| ESD5Z5.0T1G | |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 174W; 6.2V; 9.4A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 174W
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Max. forward impulse current: 9.4A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 174W; 6.2V; 9.4A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 174W
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Max. forward impulse current: 9.4A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 5665 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 69+ | 4.09 грн |
| 100+ | 3.25 грн |
| 250+ | 2.76 грн |
| 409+ | 2.5 грн |
| 1000+ | 2.48 грн |
| 1123+ | 2.37 грн |
| 3000+ | 2.32 грн |
| ESD5Z6.0T1G | |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 181W
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 181W
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 7435 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 67+ | 4.2 грн |
| 100+ | 3.43 грн |
| 250+ | 2.8 грн |
| 387+ | 2.64 грн |
| 1000+ | 2.61 грн |
| 1064+ | 2.5 грн |
| 3000+ | 2.43 грн |
| ESD5Z7.0T1G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 2050 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 88+ | 3.23 грн |
| 102+ | 2.68 грн |
| 250+ | 2.08 грн |
| 555+ | 1.85 грн |
| 1525+ | 1.74 грн |
| ESD7351HT1G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 5V; SOD323; reel,tape; Features: ESD protection
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD323
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.43...0.6pF
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 5V; SOD323; reel,tape; Features: ESD protection
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD323
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.43...0.6pF
кількість в упаковці: 5 шт
на замовлення 1605 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 17.64 грн |
| 25+ | 11.85 грн |
| 100+ | 10.11 грн |
| 130+ | 7.87 грн |
| 360+ | 7.44 грн |
| ESD7351XV2T1G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; Features: ESD protection
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD523
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.43...0.6pF
кількість в упаковці: 10 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 5V; SOD523; reel,tape; Features: ESD protection
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD523
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.43...0.6pF
кількість в упаковці: 10 шт
на замовлення 2980 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.01 грн |
| 50+ | 5.84 грн |
| 240+ | 4.29 грн |
| 660+ | 4.06 грн |
| ESD7371HT1G |
|
Виробник: ONSEMI
ESD7371HT1G Unidirectional SMD transil diodes
ESD7371HT1G Unidirectional SMD transil diodes
на замовлення 2500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 15.01 грн |
| 135+ | 7.58 грн |
| 370+ | 7.14 грн |
| ESD7371P2T5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 7V; SOD923; reel,tape; Features: ESD protection
Mounting: SMD
Type of diode: TVS
Breakdown voltage: 7V
Leakage current: 50nA
Number of channels: 1
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.3W
Case: SOD923
Max. off-state voltage: 5.3V
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 7V; SOD923; reel,tape; Features: ESD protection
Mounting: SMD
Type of diode: TVS
Breakdown voltage: 7V
Leakage current: 50nA
Number of channels: 1
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.3W
Case: SOD923
Max. off-state voltage: 5.3V
кількість в упаковці: 5 шт
товар відсутній
| ESD7383NCTBG |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 50W
Mounting: SMD
Case: WLCSP4
Max. off-state voltage: 3...5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 3
Kind of package: reel; tape
Capacitance: 1.5pF
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 50W
Mounting: SMD
Case: WLCSP4
Max. off-state voltage: 3...5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 3
Kind of package: reel; tape
Capacitance: 1.5pF
кількість в упаковці: 1 шт
товар відсутній
| ESD7461N2T5G |
Виробник: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; Ch: 1
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; Ch: 1
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
кількість в упаковці: 5 шт
товар відсутній
| ESD7504MUTAG |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.55pF
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.55pF
кількість в упаковці: 5 шт
товар відсутній
| ESD7551N2T5G |
|
Виробник: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; Ch: 1
Case: CASE714AB; X2DFN2
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Max. off-state voltage: 3.3V
Leakage current: 50nA
Capacitance: 0.22...0.35pF
Type of diode: TVS
Breakdown voltage: 5V
Peak pulse power dissipation: 0.25W
Features of semiconductor devices: ESD protection
кількість в упаковці: 10 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; Ch: 1
Case: CASE714AB; X2DFN2
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Max. off-state voltage: 3.3V
Leakage current: 50nA
Capacitance: 0.22...0.35pF
Type of diode: TVS
Breakdown voltage: 5V
Peak pulse power dissipation: 0.25W
Features of semiconductor devices: ESD protection
кількість в упаковці: 10 шт
на замовлення 1560 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.21 грн |
| 50+ | 6.13 грн |
| 240+ | 4.15 грн |
| 660+ | 3.93 грн |
| ESD7C3.3DT5G |
|
Виробник: ONSEMI
ESD7C3.3DT5G Transil diodes - arrays
ESD7C3.3DT5G Transil diodes - arrays
на замовлення 7285 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 19.23 грн |
| 130+ | 7.93 грн |
| 355+ | 7.49 грн |
| ESD7L5.0DT5G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.4V; 0.15W; double,common anode; SOT723; Ch: 2
Type of diode: TVS array
Breakdown voltage: 5.4V
Peak pulse power dissipation: 0.15W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.5...0.9pF
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.4V; 0.15W; double,common anode; SOT723; Ch: 2
Type of diode: TVS array
Breakdown voltage: 5.4V
Peak pulse power dissipation: 0.15W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Capacitance: 0.5...0.9pF
кількість в упаковці: 1 шт
товар відсутній
| ESD8008MUTAG |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 103+ | 28.8 грн |
| 1000+ | 26.96 грн |
| ESD8351XV2T1G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1
Mounting: SMD
Max. off-state voltage: 3.3V
Breakdown voltage: 7V
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: SOD523
кількість в упаковці: 10 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1
Mounting: SMD
Max. off-state voltage: 3.3V
Breakdown voltage: 7V
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: SOD523
кількість в упаковці: 10 шт
на замовлення 289 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.22 грн |
| 50+ | 6.01 грн |
| 230+ | 4.43 грн |
| 630+ | 4.19 грн |
| ESD9101P2T5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 10 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 10 шт
товар відсутній
| ESD9B3.3ST5G |
|
Виробник: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 15pF
кількість в упаковці: 25 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 15pF
кількість в упаковці: 25 шт
на замовлення 6900 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 4.32 грн |
| 100+ | 3.74 грн |
| 375+ | 2.74 грн |
| 1025+ | 2.6 грн |
| ESD9B5.0ST5G |
|
Виробник: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Max. off-state voltage: 5V
Breakdown voltage: 7.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Max. off-state voltage: 5V
Breakdown voltage: 7.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 1508 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 17.82 грн |
| 47+ | 5.79 грн |
| 67+ | 3.9 грн |
| 112+ | 2.35 грн |
| 500+ | 2.11 грн |
| 625+ | 1.61 грн |
| 1718+ | 1.52 грн |
| ESD9C3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 10 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 10 шт
товар відсутній
| ESD9L3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.5...0.9pF
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.5...0.9pF
кількість в упаковці: 5 шт
товар відсутній
| ESD9L5.0ST5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 5238 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 12.38 грн |
| 40+ | 6.8 грн |
| 100+ | 5.25 грн |
| 222+ | 4.62 грн |
| 611+ | 4.36 грн |
| ESD9R3.3ST5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 1 шт
на замовлення 9336 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 37.53 грн |
| 10+ | 32.48 грн |
| 43+ | 23.88 грн |
| 116+ | 22.58 грн |
| ESD9X12ST5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 13.5V; SOD923; reel,tape; Ch: 1; 30pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 12V
Breakdown voltage: 13.5V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 30pF
кількість в упаковці: 20 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 13.5V; SOD923; reel,tape; Ch: 1; 30pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 12V
Breakdown voltage: 13.5V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 30pF
кількість в упаковці: 20 шт
товар відсутній
| ESD9X5.0ST5G |
|
Виробник: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 10 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
кількість в упаковці: 10 шт
на замовлення 3270 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 6.66 грн |
| 120+ | 2.44 грн |
| 250+ | 2.08 грн |
| 570+ | 1.79 грн |
| 1550+ | 1.69 грн |
| ESDONCAN1LT1G |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 3A; 0.2W; bidirectional,double; SOT23
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Features of semiconductor devices: ESD protection
Capacitance: 10pF
Case: SOT23
Max. forward impulse current: 3A
Leakage current: 0.1µA
Kind of package: reel; tape
Application: CAN
Peak pulse power dissipation: 0.2W
Breakdown voltage: 26.2...32V
Number of channels: 2
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 3A; 0.2W; bidirectional,double; SOT23
Type of diode: TVS array
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional; double
Features of semiconductor devices: ESD protection
Capacitance: 10pF
Case: SOT23
Max. forward impulse current: 3A
Leakage current: 0.1µA
Kind of package: reel; tape
Application: CAN
Peak pulse power dissipation: 0.2W
Breakdown voltage: 26.2...32V
Number of channels: 2
кількість в упаковці: 5 шт
товар відсутній
| ESDR0502BT1G |
|
Виробник: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 5.8V; 1A; bidirectional; SC75; reel,tape
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Max. forward impulse current: 1A
Breakdown voltage: 5.8V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.15W
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 5.8V; 1A; bidirectional; SC75; reel,tape
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Max. forward impulse current: 1A
Breakdown voltage: 5.8V
Leakage current: 1µA
Type of diode: TVS
Peak pulse power dissipation: 0.15W
кількість в упаковці: 5 шт
товар відсутній
| ESDR0502NMUTAG |
|
Виробник: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Max. forward impulse current: 3A
Breakdown voltage: 6V
Leakage current: 1µA
Number of channels: 3
Type of diode: TVS array
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Max. forward impulse current: 3A
Breakdown voltage: 6V
Leakage current: 1µA
Number of channels: 3
Type of diode: TVS array
кількість в упаковці: 5 шт
товар відсутній
| EU-SIGFOX-GEVB |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Interface: GPIO; I2C; UART
Kind of connector: pin header; pin strips; SMA
development kits accessories features: Arduino Shield compatible; SIGFOX module
кількість в упаковці: 1 шт
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Interface: GPIO; I2C; UART
Kind of connector: pin header; pin strips; SMA
development kits accessories features: Arduino Shield compatible; SIGFOX module
кількість в упаковці: 1 шт
товар відсутній
| FAN3100CSX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
Mounting: SMD
Output current: -1.8...2.5A
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 14ns
Number of channels: 1
Kind of package: reel; tape
Case: SOT23-5
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
Mounting: SMD
Output current: -1.8...2.5A
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 14ns
Number of channels: 1
Kind of package: reel; tape
Case: SOT23-5
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
на замовлення 2321 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.74 грн |
| 5+ | 60.97 грн |
| 23+ | 45.3 грн |
| 61+ | 43.56 грн |
| FAN3100TMPX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
Mounting: SMD
Kind of output: non-inverting
Output current: -2.5...1.8A
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 14ns
Number of channels: 1
Kind of package: reel; tape
Case: MLP6
Technology: MillerDrive™
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
Mounting: SMD
Kind of output: non-inverting
Output current: -2.5...1.8A
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 14ns
Number of channels: 1
Kind of package: reel; tape
Case: MLP6
Technology: MillerDrive™
Kind of integrated circuit: low-side; MOSFET gate driver
кількість в упаковці: 1 шт
товар відсутній
| FAN3111CSX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Supply voltage: 4.5...18V DC
Case: SOT23-5
Output current: -0.9...1.1A
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Impulse rise time: 18ns
Pulse fall time: 17ns
Technology: MillerDrive™
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Supply voltage: 4.5...18V DC
Case: SOT23-5
Output current: -0.9...1.1A
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Impulse rise time: 18ns
Pulse fall time: 17ns
Technology: MillerDrive™
кількість в упаковці: 1 шт
на замовлення 1892 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 75.99 грн |
| 5+ | 55 грн |
| 23+ | 43.82 грн |
| 25+ | 43.73 грн |
| 64+ | 41.38 грн |
| 500+ | 39.72 грн |
| FAN3111ESX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Supply voltage: 4.5...18V DC
Case: SOT23-5
Output current: -0.9...1.1A
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Impulse rise time: 18ns
Pulse fall time: 17ns
Technology: MillerDrive™
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Supply voltage: 4.5...18V DC
Case: SOT23-5
Output current: -0.9...1.1A
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Impulse rise time: 18ns
Pulse fall time: 17ns
Technology: MillerDrive™
кількість в упаковці: 1 шт
на замовлення 2911 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.74 грн |
| 6+ | 48.85 грн |
| 25+ | 41.47 грн |
| 28+ | 35.98 грн |
| 77+ | 33.97 грн |
| FAN3217TMX-F085 |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 22ns
Pulse fall time: 17ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 22ns
Pulse fall time: 17ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
товар відсутній
| FAN3224CMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
товар відсутній
| FAN3224TMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
товар відсутній