FDMA7630 onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 43.05 грн |
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Технічний опис FDMA7630 onsemi
Description: MOSFET N-CH 30V 11A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V.
Інші пропозиції FDMA7630 за ціною від 37.82 грн до 113.02 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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FDMA7630 | Виробник : onsemi |
Description: MOSFET N-CH 30V 11A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V |
на замовлення 8124 шт: термін постачання 21-31 дні (днів) |
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FDMA7630 | Виробник : onsemi / Fairchild | MOSFETs 30V Single N-Channel PowerTrench MOSFET |
на замовлення 28931 шт: термін постачання 21-30 дні (днів) |
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FDMA7630 | Виробник : ON Semiconductor | Trans MOSFET N-CH 30V 11A 6-Pin WDFN EP T/R |
товар відсутній |
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FDMA7630 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET Kind of package: reel; tape Case: MicroFET Mounting: SMD On-state resistance: 18mΩ Drain current: 11A Drain-source voltage: 30V Power dissipation: 2.4W Polarisation: unipolar Gate charge: 22nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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FDMA7630 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET Kind of package: reel; tape Case: MicroFET Mounting: SMD On-state resistance: 18mΩ Drain current: 11A Drain-source voltage: 30V Power dissipation: 2.4W Polarisation: unipolar Gate charge: 22nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Type of transistor: N-MOSFET |
товар відсутній |