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FCH077N65F-F155 ONSEMI fch077n65f-d.pdf FAIR-S-A0000571263-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH085N80-F155 ONSEMI fch085n80_f155-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 138A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 29A
Pulsed drain current: 138A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH099N65S3-F155 ONSEMI fch099n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 75A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH104N60F FCH104N60F ONSEMI fch104n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH104N60F-F085 ONSEMI fch104n60f_f085-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
FCH110N65F-F155 ONSEMI fch110n65f-d.pdf FAIR-S-A0000571230-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 105A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 105A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH125N60E ONSEMI ONSM-S-A0003584881-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 87A
Power dissipation: 278W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.102Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH125N65S3R0-F155 ONSEMI fch125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH150N65F-F155 ONSEMI Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14.9A; Idm: 72A; 298W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14.9A
Pulsed drain current: 72A
Power dissipation: 298W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH165N60E FCH165N60E ONSEMI fch165n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 69A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH165N65S3R0-F155 ONSEMI fch165n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH170N60 ONSEMI fch170n60-d.pdf ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 66A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH22N60N ONSEMI fch22n60n-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH25N60N ONSEMI FAIRS46550-1.pdf?t.download=true&u=5oefqw fch25n60n-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 75A
Power dissipation: 216W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH35N60 ONSEMI fch35n60-d.pdf FAIRS46785-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.2A
Pulsed drain current: 105A
Power dissipation: 312.5W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60-F085 ONSEMI fch47n60_f085-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 187nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60-F133 FCH47N60-F133 ONSEMI FCH47N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60F-F085 ONSEMI ONSM-S-A0003584341-1.pdf?t.download=true&u=5oefqw fch47n60f_f085-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60N ONSEMI FAIRS46021-1.pdf?t.download=true&u=5oefqw fch47n60n-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 368W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 51.5Ω
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60NF ONSEMI fch47n60nf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28.9A; Idm: 137.4A; 368W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28.9A
Pulsed drain current: 137.4A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 57.5mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH76N60N FCH76N60N ONSEMI FAIRS46023-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.1A; Idm: 228A; 543W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.1A
Pulsed drain current: 228A
Power dissipation: 543W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH76N60NF ONSEMI FAIRS46691-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; Idm: 218A; 543W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Pulsed drain current: 218A
Power dissipation: 543W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 28.7mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCHD040N65S3-F155 ONSEMI fchd040n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 162.5A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 35.4Ω/4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCMT299N60 ONSEMI fcmt299n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Pulsed drain current: 36A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP067N65S3 FCP067N65S3 ONSEMI fcp067n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP104N60 FCP104N60 ONSEMI fcp104n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 111A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP104N60F FCP104N60F ONSEMI fcp104n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP11N60 FCP11N60 ONSEMI FCP11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 133 шт:
термін постачання 14-21 дні (днів)
2+222.34 грн
3+ 190.88 грн
7+ 158.55 грн
18+ 149.84 грн
250+ 143.74 грн
Мінімальне замовлення: 2
FCP16N60 FCP16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP20N60 FCP20N60 ONSEMI FCP20N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)
1+508.48 грн
3+ 421.57 грн
4+ 283.12 грн
10+ 267.44 грн
FCP22N60N FCP22N60N ONSEMI FCP22N60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP36N60N FCP36N60N ONSEMI FCPx36N60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.7A; 312W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.7A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 81mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
FCPF11N60 FCPF11N60 ONSEMI FCP11N60.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 14-21 дні (днів)
2+209.21 грн
8+ 139.32 грн
21+ 127.19 грн
500+ 124.57 грн
1000+ 121.96 грн
Мінімальне замовлення: 2
FCPF11N60F FCPF11N60F ONSEMI fcpf11n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCPF11N60T FCPF11N60T ONSEMI fcpf11n60t-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCPF1300N80Z FCPF1300N80Z ONSEMI FCPF1300N80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCPF16N60 FCPF16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCPF190N60 ONSEMI fcpf190n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 121 шт:
термін постачання 14-21 дні (днів)
11+338.67 грн
99+ 294.01 грн
Мінімальне замовлення: 11
FCPF20N60 FCPF20N60 ONSEMI FCP20N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 47 шт:
термін постачання 14-21 дні (днів)
1+436.24 грн
3+ 378.14 грн
4+ 281.38 грн
10+ 265.7 грн
FCPF380N60E ONSEMI ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 508 шт:
термін постачання 14-21 дні (днів)
22+170.74 грн
250+ 142.93 грн
Мінімальне замовлення: 22
FCPF400N80Z FCPF400N80Z ONSEMI FCPF400N80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
2+185.75 грн
3+ 158.31 грн
8+ 131.54 грн
22+ 124.57 грн
250+ 123.7 грн
Мінімальне замовлення: 2
FCPF7N60 ONSEMI fcpf7n60-d.pdf FCPF7N60-ONS THT N channel transistors
товар відсутній
FDA032N08 ONSEMI fda032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA16N50-F109 FDA16N50-F109 ONSEMI FDA16N50_F109.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 450 шт
товар відсутній
FDA16N50LDTU ONSEMI FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA24N40F FDA24N40F ONSEMI fda24n40f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 13.8A
Pulsed drain current: 92A
Power dissipation: 235W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA24N50F FDA24N50F ONSEMI fda24n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 96A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA28N50 ONSEMI fda28n50-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA38N30 ONSEMI fda38n30-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA59N25 FDA59N25 ONSEMI fda59n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)
1+327.42 грн
5+ 284.06 грн
6+ 199.49 грн
14+ 188.17 грн
FDA59N30 FDA59N30 ONSEMI FAIRS47594-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)
1+326.48 грн
5+ 218.02 грн
14+ 198.62 грн
30+ 195.14 грн
FDA69N25 FDA69N25 ONSEMI FAIRS47564-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA70N20 ONSEMI fda70n20-d.pdf FAIRS46388-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 280A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 280A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
FDB024N06 FDB024N06 ONSEMI fdb024n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 190A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDB024N08BL7 ONSEMI fdb024n08bl7-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Mounting: SMD
Power dissipation: 246W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 178nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 916A
Case: D2PAK
Drain-source voltage: 80V
Drain current: 162A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
FDB035AN06A0 FDB035AN06A0 ONSEMI FDB035AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 7.1mΩ
кількість в упаковці: 1 шт
на замовлення 327 шт:
термін постачання 14-21 дні (днів)
1+422.17 грн
4+ 324.77 грн
9+ 296.19 грн
100+ 290.09 грн
FDB035N10A FDB035N10A ONSEMI fdb035n10a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 856A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 856A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDB045AN08A0 FDB045AN08A0 ONSEMI FDB045AN08A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)
2+273 грн
5+ 232.49 грн
6+ 194.26 грн
15+ 183.81 грн
Мінімальне замовлення: 2
FDB047N10 ONSEMI FAIRS46508-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH077N65F-F155 fch077n65f-d.pdf FAIR-S-A0000571263-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH085N80-F155 fch085n80_f155-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 138A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 29A
Pulsed drain current: 138A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH099N65S3-F155 fch099n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 75A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH104N60F fch104n60f-d.pdf
FCH104N60F
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH104N60F-F085 fch104n60f_f085-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
FCH110N65F-F155 fch110n65f-d.pdf FAIR-S-A0000571230-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 105A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 105A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH125N60E ONSM-S-A0003584881-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 87A
Power dissipation: 278W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.102Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH150N65F-F155
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14.9A; Idm: 72A; 298W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14.9A
Pulsed drain current: 72A
Power dissipation: 298W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH165N60E fch165n60e-d.pdf
FCH165N60E
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 69A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH165N65S3R0-F155 fch165n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH170N60 fch170n60-d.pdf ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 66A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH22N60N fch22n60n-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH25N60N FAIRS46550-1.pdf?t.download=true&u=5oefqw fch25n60n-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 75A
Power dissipation: 216W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH35N60 fch35n60-d.pdf FAIRS46785-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.2A
Pulsed drain current: 105A
Power dissipation: 312.5W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60-F085 fch47n60_f085-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 187nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60-F133 FCH47N60.pdf
FCH47N60-F133
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60F-F085 ONSM-S-A0003584341-1.pdf?t.download=true&u=5oefqw fch47n60f_f085-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 66mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60N FAIRS46021-1.pdf?t.download=true&u=5oefqw fch47n60n-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 368W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 51.5Ω
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH47N60NF fch47n60nf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28.9A; Idm: 137.4A; 368W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28.9A
Pulsed drain current: 137.4A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 57.5mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH76N60N FAIRS46023-1.pdf?t.download=true&u=5oefqw
FCH76N60N
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.1A; Idm: 228A; 543W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.1A
Pulsed drain current: 228A
Power dissipation: 543W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCH76N60NF FAIRS46691-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; Idm: 218A; 543W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Pulsed drain current: 218A
Power dissipation: 543W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 28.7mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCHD040N65S3-F155 fchd040n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 162.5A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 35.4Ω/4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCMT299N60 fcmt299n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Pulsed drain current: 36A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP067N65S3 fcp067n65s3-d.pdf
FCP067N65S3
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP104N60 fcp104n60-d.pdf
FCP104N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 111A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP104N60F fcp104n60f-d.pdf
FCP104N60F
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP11N60 FCP11N60.pdf
FCP11N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 133 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+222.34 грн
3+ 190.88 грн
7+ 158.55 грн
18+ 149.84 грн
250+ 143.74 грн
Мінімальне замовлення: 2
FCP16N60 fcp16n60-d.pdf
FCP16N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP20N60 FCP20N60.pdf
FCP20N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 17 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+508.48 грн
3+ 421.57 грн
4+ 283.12 грн
10+ 267.44 грн
FCP22N60N FCP22N60N.pdf
FCP22N60N
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCP36N60N FCPx36N60N.pdf
FCP36N60N
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.7A; 312W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.7A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 81mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
FCPF11N60 description FCP11N60.pdf
FCPF11N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+209.21 грн
8+ 139.32 грн
21+ 127.19 грн
500+ 124.57 грн
1000+ 121.96 грн
Мінімальне замовлення: 2
FCPF11N60F fcpf11n60f-d.pdf
FCPF11N60F
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCPF11N60T fcpf11n60t-d.pdf
FCPF11N60T
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCPF1300N80Z FCPF1300N80Z.pdf
FCPF1300N80Z
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FCPF190N60 fcpf190n60-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 121 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
11+338.67 грн
99+ 294.01 грн
Мінімальне замовлення: 11
FCPF20N60 FCP20N60.pdf
FCPF20N60
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 47 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+436.24 грн
3+ 378.14 грн
4+ 281.38 грн
10+ 265.7 грн
FCPF380N60E ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 508 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
22+170.74 грн
250+ 142.93 грн
Мінімальне замовлення: 22
FCPF400N80Z FCPF400N80Z.pdf
FCPF400N80Z
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+185.75 грн
3+ 158.31 грн
8+ 131.54 грн
22+ 124.57 грн
250+ 123.7 грн
Мінімальне замовлення: 2
FCPF7N60 fcpf7n60-d.pdf
Виробник: ONSEMI
FCPF7N60-ONS THT N channel transistors
товар відсутній
FDA032N08 fda032n08-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA16N50-F109 FDA16N50_F109.PDF
FDA16N50-F109
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 450 шт
товар відсутній
FDA16N50LDTU FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA24N40F fda24n40f-d.pdf
FDA24N40F
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 13.8A
Pulsed drain current: 92A
Power dissipation: 235W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA24N50F fda24n50f-d.pdf
FDA24N50F
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 96A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA28N50 fda28n50-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA38N30 fda38n30-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA59N25 fda59n25-d.pdf
FDA59N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+327.42 грн
5+ 284.06 грн
6+ 199.49 грн
14+ 188.17 грн
FDA59N30 FAIRS47594-1.pdf?t.download=true&u=5oefqw
FDA59N30
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 36 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+326.48 грн
5+ 218.02 грн
14+ 198.62 грн
30+ 195.14 грн
FDA69N25 FAIRS47564-1.pdf?t.download=true&u=5oefqw
FDA69N25
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDA70N20 fda70n20-d.pdf FAIRS46388-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 280A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 280A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
FDB024N06 fdb024n06-d.pdf
FDB024N06
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 190A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDB024N08BL7 fdb024n08bl7-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Mounting: SMD
Power dissipation: 246W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 178nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 916A
Case: D2PAK
Drain-source voltage: 80V
Drain current: 162A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
FDB035AN06A0 FDB035AN06A0.pdf
FDB035AN06A0
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 7.1mΩ
кількість в упаковці: 1 шт
на замовлення 327 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+422.17 грн
4+ 324.77 грн
9+ 296.19 грн
100+ 290.09 грн
FDB035N10A fdb035n10a-d.pdf
FDB035N10A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 856A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 856A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FDB045AN08A0 FDB045AN08A0.pdf
FDB045AN08A0
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+273 грн
5+ 232.49 грн
6+ 194.26 грн
15+ 183.81 грн
Мінімальне замовлення: 2
FDB047N10 FAIRS46508-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
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