на замовлення 1242 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1478.15 грн |
| 10+ | 1313.58 грн |
| 30+ | 1078.82 грн |
| 60+ | 1064.19 грн |
| 120+ | 997.98 грн |
| 270+ | 988.22 грн |
| 510+ | 947.8 грн |
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Технічний опис IXFT170N25X3HV IXYS
Description: MOSFET N-CH 250V 170A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V.
Інші пропозиції IXFT170N25X3HV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFT170N25X3HV | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns Mounting: SMD Kind of package: tube Drain current: 170A Kind of channel: enhanced Drain-source voltage: 250V Type of transistor: N-MOSFET Case: TO268HV On-state resistance: 7.4mΩ Reverse recovery time: 140ns Power dissipation: 890W Gate charge: 0.19µC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class кількість в упаковці: 1 шт |
товар відсутній |
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IXFT170N25X3HV | Виробник : Littelfuse |
Trans MOSFET N-CH 250V 170A 3-Pin(2+Tab) TO-268HV |
товар відсутній |
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IXFT170N25X3HV | Виробник : IXYS |
Description: MOSFET N-CH 250V 170A TO268HV Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V |
товар відсутній |
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IXFT170N25X3HV | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns Mounting: SMD Kind of package: tube Drain current: 170A Kind of channel: enhanced Drain-source voltage: 250V Type of transistor: N-MOSFET Case: TO268HV On-state resistance: 7.4mΩ Reverse recovery time: 140ns Power dissipation: 890W Gate charge: 0.19µC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class |
товар відсутній |