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IXXK200N60C3 IXYS
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Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 143ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
кількість в упаковці: 1 шт
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Технічний опис IXXK200N60C3 IXYS
Description: IGBT 600V 340A 1630W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, Supplier Device Package: TO-264 (IXXK), IGBT Type: PT, Td (on/off) @ 25°C: 47ns/125ns, Switching Energy: 3mJ (on), 1.7mJ (off), Test Condition: 360V, 100A, 1Ohm, 15V, Gate Charge: 315 nC, Part Status: Active, Current - Collector (Ic) (Max): 340 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 900 A, Power - Max: 1630 W.
Інші пропозиції IXXK200N60C3
Фото | Назва | Виробник | Інформація |
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IXXK200N60C3 | Виробник : Littelfuse |
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товар відсутній |
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IXXK200N60C3 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 47ns/125ns Switching Energy: 3mJ (on), 1.7mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1630 W |
товар відсутній |
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IXXK200N60C3 | Виробник : IXYS |
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товар відсутній |
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![]() |
IXXK200N60C3 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 143ns Turn-off time: 240ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC |
товар відсутній |