| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFH100N25P | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 600W Case: TO247-3 On-state resistance: 27mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFH100N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 100A Power dissipation: 48W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFK100N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Power dissipation: 1.04kW Case: TO264 On-state resistance: 30mΩ Mounting: THT Gate charge: 183nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXFL100N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™ Drain-source voltage: 500V Drain current: 68A Case: ISOPLUS264™ Mounting: THT Polarisation: unipolar On-state resistance: 52mΩ Power dissipation: 625W Kind of channel: enhanced Gate charge: 240nC Kind of package: tube Type of transistor: N-MOSFET |
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IXFN100N50P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 75A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 250A Power dissipation: 1.04kW Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 240nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
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IXFN100N50Q3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 82A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 49mΩ Pulsed drain current: 300A Power dissipation: 960W Technology: HiPerFET™; Q3-Class Kind of channel: enhanced Gate charge: 255nC Reverse recovery time: 250ns Gate-source voltage: ±40V Mechanical mounting: screw |
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IXFN100N65X2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 78A Pulsed drain current: 200A Power dissipation: 595W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 30mΩ Gate charge: 183nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFT100N30X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 100A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 130ns |
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IXFX100N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Power dissipation: 1.04kW Case: PLUS247™ On-state resistance: 30mΩ Mounting: THT Gate charge: 183nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
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IXGK100N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Turn-on time: 285ns Pulsed collector current: 600A Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Collector current: 100A Gate-emitter voltage: ±20V Type of transistor: IGBT Collector-emitter voltage: 1.7kV Case: TO264 Turn-off time: 720ns |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXGN100N170 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B Electrical mounting: screw Mechanical mounting: screw Case: SOT227B Power dissipation: 735W Type of module: IGBT Features of semiconductor devices: high voltage Technology: NPT Collector current: 95A Pulsed collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: single transistor Max. off-state voltage: 1.7kV |
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IXGX100N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 100A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 600A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 285ns Turn-off time: 720ns Features of semiconductor devices: high voltage |
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IXTA100N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: TO263 On-state resistance: 7mΩ Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 34ns |
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IXTK100N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 100A Power dissipation: 600W Case: TO264 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
на замовлення 229 шт: термін постачання 21-30 дні (днів) |
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IXTP100N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 150W Case: TO220AB On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 34ns |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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IXXH100N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Gate charge: 143nC Technology: GenX3™; Planar; XPT™ Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Turn-on time: 92ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube |
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IXXH100N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Gate charge: 150nC Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 380A Turn-on time: 95s Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 830W |
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IXXK100N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 695W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 370A Mounting: THT Gate charge: 143nC Kind of package: tube Turn-on time: 92ns Turn-off time: 350ns |
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IXXK100N60C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 695W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 340A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 95ns Turn-off time: 0.22µs |
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IXXN100N60B3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W Technology: GenX3™; XPT™ Collector current: 98A Power dissipation: 500W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 440A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXXR100N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 400W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: THT Gate charge: 143nC Kind of package: tube Turn-on time: 92ns Turn-off time: 350ns |
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IXXX100N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 370A Turn-on time: 92ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 695W Kind of package: tube Gate charge: 143nC Collector-emitter voltage: 600V |
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IXXX100N60C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 340A Turn-on time: 95ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 695W Kind of package: tube Gate charge: 150nC Collector-emitter voltage: 600V |
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IXYH100N65A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 100A Power dissipation: 470W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 178nC Kind of package: tube Turn-on time: 87ns Turn-off time: 459ns |
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IXyH100N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 100A Power dissipation: 830W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 420A Mounting: THT Gate charge: 172nC Kind of package: tube Turn-on time: 62ns Turn-off time: 200ns |
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IXYK100N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 1.15kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 260C Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns |
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IXYN100N120B3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 76A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 480A Power dissipation: 690W Technology: GenX3™; XPT™ Mechanical mounting: screw |
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IXYN100N120C3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 84A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 460A Power dissipation: 830W Technology: GenX3™; XPT™ Mechanical mounting: screw |
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IXYN100N120C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 62A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 440A Power dissipation: 690W Technology: GenX3™; XPT™ Mechanical mounting: screw |
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IXYN100N65A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B Technology: GenX3™; XPT™ Collector current: 100A Power dissipation: 600W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 460A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXYN100N65B3D1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B Technology: GenX3™; XPT™ Collector current: 100A Power dissipation: 600W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 490A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXYN100N65C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W Technology: GenX3™; XPT™ Collector current: 90A Power dissipation: 600W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 420A Semiconductor structure: single transistor Max. off-state voltage: 650V Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXYR100N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 484W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 260nC Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns |
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IXYX100N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 1.15kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 530A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 125ns Turn-off time: 450ns |
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IXYX100N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 1.15kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 260C Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns |
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IXYX100N65B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 100A Power dissipation: 830W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 460A Mounting: THT Gate charge: 168nC Kind of package: tube Turn-on time: 65ns Turn-off time: 358ns |
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| MMIX1X100N60B3H1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 68A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: SMD Gate charge: 143nC Kind of package: tube Turn-on time: 92s Turn-off time: 350ns |
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IXTP260N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Drain current: 260A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: thrench gate power mosfet Gate charge: 0.14µC Kind of channel: enhanced Reverse recovery time: 60ns Drain-source voltage: 55V |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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IXFH28N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 695W Case: TO247-3 On-state resistance: 0.26Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
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| IXFH48N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Pulsed drain current: 68A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 163ns |
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| IXFH78N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W Reverse recovery time: 205ns Drain-source voltage: 600V Drain current: 78A On-state resistance: 38mΩ Type of transistor: N-MOSFET Power dissipation: 780W Polarisation: unipolar Kind of package: tube Gate charge: 70nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Mounting: THT Case: TO247-3 |
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| IXFH98N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 98A Pulsed drain current: 160A Power dissipation: 960W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 220ns |
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IXFK48N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 830W Case: TO264 On-state resistance: 135mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXFK48N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 1kW Case: TO264 On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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IXFN48N60P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 110A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.14Ω Gate charge: 150nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFQ28N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 695W Case: TO3P On-state resistance: 0.26Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
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IXFR48N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 0.15Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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IXFR48N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 154mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
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IXFX48N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 830W Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXFX48N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IXGA48N60A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: SMD Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
на замовлення 183 шт: термін постачання 21-30 дні (днів) |
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IXGH28N60B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3 Type of transistor: IGBT Technology: PolarHV™; PT Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 190W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 62nC Kind of package: tube Turn-on time: 45ns Turn-off time: 350ns |
товар відсутній |
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IXGH48N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
товар відсутній |
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IXGH48N60B3C1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 280A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 48ns Turn-off time: 347ns |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IXGH48N60B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 280A Mounting: THT Gate charge: 115nC Kind of package: tube Turn-on time: 44ns Turn-off time: 347ns |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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IXGH48N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 45ns Turn-off time: 187ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXGP48N60A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns |
товар відсутній |
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CPC1117N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
на замовлення 784 шт: термін постачання 21-30 дні (днів) |
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CPC1117NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
товар відсутній |
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DSEP8-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 50A; TO220AC; 60W; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 50A Case: TO220AC Max. forward voltage: 2.1V Heatsink thickness: 1.14...1.39mm Power dissipation: 60W Reverse recovery time: 35ns Technology: HiPerFRED™ |
товар відсутній |
| IXFH100N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 250V; 100A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 861.54 грн |
| IXFH100N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 48W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 48W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 48W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1024.93 грн |
| 2+ | 694.01 грн |
| 4+ | 656.26 грн |
| 10+ | 655.53 грн |
| IXFK100N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 974.9 грн |
| 3+ | 855.9 грн |
| IXFL100N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Drain-source voltage: 500V
Drain current: 68A
Case: ISOPLUS264™
Mounting: THT
Polarisation: unipolar
On-state resistance: 52mΩ
Power dissipation: 625W
Kind of channel: enhanced
Gate charge: 240nC
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Drain-source voltage: 500V
Drain current: 68A
Case: ISOPLUS264™
Mounting: THT
Polarisation: unipolar
On-state resistance: 52mΩ
Power dissipation: 625W
Kind of channel: enhanced
Gate charge: 240nC
Kind of package: tube
Type of transistor: N-MOSFET
товар відсутній
| IXFN100N50P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 75A; SOT227B; screw; Idm: 250A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 75A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 250A
Power dissipation: 1.04kW
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 240nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN100N50Q3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 255nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
| IXFN100N65X2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 183nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 78A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Pulsed drain current: 200A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 30mΩ
Gate charge: 183nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFT100N30X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 130ns
товар відсутній
| IXFX100N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; PLUS247™; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: PLUS247™
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
товар відсутній
| IXGK100N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Turn-on time: 285ns
Pulsed collector current: 600A
Power dissipation: 830W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 425nC
Technology: NPT
Collector current: 100A
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Case: TO264
Turn-off time: 720ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2402.45 грн |
| IXGN100N170 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Power dissipation: 735W
Type of module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Collector current: 95A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Power dissipation: 735W
Type of module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Collector current: 95A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
товар відсутній
| IXGX100N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
товар відсутній
| IXTA100N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
товар відсутній
| IXTK100N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 100A; 600W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 600W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
на замовлення 229 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 906.1 грн |
| 2+ | 600.36 грн |
| 3+ | 599.64 грн |
| 4+ | 566.97 грн |
| IXTP100N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.47 грн |
| 4+ | 112.52 грн |
| 10+ | 89.29 грн |
| 26+ | 84.21 грн |
| IXXH100N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Gate charge: 143nC
Technology: GenX3™; Planar; XPT™
Case: TO247-3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 830W
Kind of package: tube
товар відсутній
| IXXH100N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Turn-on time: 95s
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 830W
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Gate charge: 150nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 380A
Turn-on time: 95s
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 830W
товар відсутній
| IXXK100N60B3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
товар відсутній
| IXXK100N60C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 695W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 0.22µs
товар відсутній
| IXXN100N60B3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 500W
Technology: GenX3™; XPT™
Collector current: 98A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXXR100N60B3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 400W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 400W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92ns
Turn-off time: 350ns
товар відсутній
| IXXX100N60B3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
товар відсутній
| IXXX100N60C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 340A
Turn-on time: 95ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 150nC
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 340A
Turn-on time: 95ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 150nC
Collector-emitter voltage: 600V
товар відсутній
| IXYH100N65A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
товар відсутній
| IXyH100N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
товар відсутній
| IXYK100N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
| IXYN100N120B3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 76A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 76A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
| IXYN100N120C3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 830W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 830W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
| IXYN100N120C3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
| IXYN100N65A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXYN100N65B3D1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXYN100N65C3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 90A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 90A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXYR100N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
| IXYX100N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
товар відсутній
| IXYX100N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
| IXYX100N65B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
товар відсутній
| MMIX1X100N60B3H1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 68A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92s
Turn-off time: 350ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 68A; 400W; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 68A
Power dissipation: 400W
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Mounting: SMD
Gate charge: 143nC
Kind of package: tube
Turn-on time: 92s
Turn-off time: 350ns
товар відсутній
| IXTP260N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 379.95 грн |
| 3+ | 317.97 грн |
| 4+ | 264.97 грн |
| 9+ | 250.45 грн |
| IXFH28N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH48N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 163ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 163ns
товар відсутній
| IXFH78N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W
Reverse recovery time: 205ns
Drain-source voltage: 600V
Drain current: 78A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 78A; Idm: 120A; 780W
Reverse recovery time: 205ns
Drain-source voltage: 600V
Drain current: 78A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 780W
Polarisation: unipolar
Kind of package: tube
Gate charge: 70nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Mounting: THT
Case: TO247-3
товар відсутній
| IXFH98N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 98A
Pulsed drain current: 160A
Power dissipation: 960W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 220ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 98A; Idm: 160A; 960W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 98A
Pulsed drain current: 160A
Power dissipation: 960W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 220ns
товар відсутній
| IXFK48N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| IXFK48N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1564.37 грн |
| 2+ | 1373.5 грн |
| 25+ | 1330.67 грн |
| IXFN48N60P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 110A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; Idm: 110A
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 110A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.14Ω
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFQ28N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFR48N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFR48N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX48N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 48A; 830W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXFX48N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXGA48N60A3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
на замовлення 183 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 335.39 грн |
| 3+ | 280.22 грн |
| 4+ | 231.58 грн |
| 11+ | 218.51 грн |
| IXGH28N60B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
товар відсутній
| IXGH48N60A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товар відсутній
| IXGH48N60B3C1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 347ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1458.83 грн |
| IXGH48N60B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 280A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 347ns
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 608.24 грн |
| 3+ | 410.16 грн |
| 6+ | 388.38 грн |
| IXGH48N60C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 601.2 грн |
| IXGP48N60A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товар відсутній
| CPC1117N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
на замовлення 784 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.98 грн |
| 14+ | 63.88 грн |
| 37+ | 60.25 грн |
| CPC1117NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
товар відсутній
| DSEP8-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 50A; TO220AC; 60W; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: TO220AC
Max. forward voltage: 2.1V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 60W
Reverse recovery time: 35ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 50A; TO220AC; 60W; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: TO220AC
Max. forward voltage: 2.1V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 60W
Reverse recovery time: 35ns
Technology: HiPerFRED™
товар відсутній