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IXBT24N170 IXBT24N170 IXYS IXBH(t)24N170.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+1697.82 грн
2+ 1491.1 грн
3+ 1490.37 грн
10+ 1472.27 грн
IXFH140N10P IXFH140N10P IXYS IXFH(T)140N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
1+602.08 грн
3+ 400.47 грн
6+ 378.75 грн
IXFT140N10P IXFT140N10P IXYS IXFH(T)140N10P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+609.1 грн
2+ 450.44 грн
6+ 425.82 грн
IXTQ140N10P IXTQ140N10P IXYS IXTQ140N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTT140N10P IXTT140N10P IXYS IXTQ140N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
CPC3714CTR CPC3714CTR IXYS CPC3714.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depleted
Gate-source voltage: ±15V
Case: SOT89
Drain-source voltage: 350V
Drain current: 0.24A
On-state resistance: 14Ω
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
6+68.63 грн
9+ 41.28 грн
25+ 36.93 грн
29+ 30.05 грн
78+ 28.39 грн
Мінімальне замовлення: 6
IXBH6N170 IXBH6N170 IXYS IXBH6N170_IXBT6N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
товар відсутній
MEK250-12DA IXYS 96514.pdf Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Case: Y4-M6
Type of module: diode
товар відсутній
LCA110 LCA110 IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
3+151.3 грн
9+ 97.76 грн
24+ 92.7 грн
Мінімальне замовлення: 3
LCA110L LCA110L IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110LS LCA110LS IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
2+224.61 грн
9+ 99.94 грн
24+ 94.14 грн
Мінімальне замовлення: 2
LCA110LSTR IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110S LCA110S IXYS lca110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
2+217.59 грн
9+ 94.14 грн
25+ 88.35 грн
Мінімальне замовлення: 2
LCA110STR IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
IXTA4N80P IXTA4N80P IXYS IXTA(P)4N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
товар відсутній
IXTP4N80P IXTP4N80P IXYS IXTA(P)4N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
3+172.36 грн
10+ 91.97 грн
26+ 86.9 грн
Мінімальне замовлення: 3
IXGH4N250C IXYS DS100320(IXGH-GT4N250C).pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
IXBK64N250 IXBK64N250 IXYS IXBK(X)64N250.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
товар відсутній
IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTN17N120L IXTN17N120L IXYS IXTN17N120L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXBOD2-04 IXYS IXBOD2.pdf Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
товар відсутній
CPC1020N CPC1020N IXYS cpc1020n.pdf Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Case: SOP4
Mounting: SMT
на замовлення 457 шт:
термін постачання 21-30 дні (днів)
2+333.01 грн
6+ 143.39 грн
17+ 135.42 грн
Мінімальне замовлення: 2
CPC1020NTR CPC1020NTR IXYS CPC1020N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Case: SOP4
Mounting: SMT
товар відсутній
CLA50E1200HB CLA50E1200HB IXYS CLA50E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Max. forward impulse current: 0.65kA
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
2+350.17 грн
3+ 287.5 грн
4+ 258.53 грн
9+ 244.77 грн
30+ 241.15 грн
Мінімальне замовлення: 2
CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS CLA50E1200TC.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
1+574 грн
3+ 383.82 грн
7+ 362.82 грн
CLA50E1200TC-TRL IXYS media?resourcetype=datasheets&itemid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4&filename=Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
товар відсутній
MDD26-12N1B MDD26-12N1B IXYS MDD26-12N1B-DTE.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Case: TO240AA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
1+1349.21 грн
2+ 1184.77 грн
MCC44-16io1B MCC44-16io1B IXYS MCC44-16IO1B-DTE.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+1865.5 грн
2+ 1638.11 грн
MCD162-16io1 MCD162-16io1 IXYS MCD162-16io1.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.6kV
Load current: 181A
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.03V
Case: Y4-M6
Mechanical mounting: screw
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Max. load current: 300A
Gate current: 150/200mA
Type of module: diode-thyristor
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+4074.15 грн
6+ 3652.79 грн
CPC1001N CPC1001N IXYS 1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
CTR@If: 100-800%@0.2mA
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
6+64.16 грн
20+ 42.51 грн
25+ 42.44 грн
55+ 40.19 грн
500+ 39.32 грн
Мінімальне замовлення: 6
CPC1001NTR CPC1001NTR IXYS CPC1001N.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Max. operating current: 0.1A
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
CTR@If: 100-800%@0.2mA
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Control current max.: 5mA
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
товар відсутній
CPC1002N CPC1002N IXYS cpc1002n.pdf Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Contacts configuration: SPST-NO
Max. operating current: 700mA
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Case: SOP4
Mounting: SMT
на замовлення 671 шт:
термін постачання 21-30 дні (днів)
3+141.94 грн
14+ 60.83 грн
38+ 57.93 грн
Мінімальне замовлення: 3
CPC1002NTR CPC1002NTR IXYS CPC1002N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Contacts configuration: SPST-NO
Max. operating current: 700mA
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Case: SOP4
Mounting: SMT
товар відсутній
CPC1006N CPC1006N IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Contacts configuration: SPST-NO
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Case: SOP4
Mounting: SMT
на замовлення 3432 шт:
термін постачання 21-30 дні (днів)
5+95.93 грн
13+ 68.8 грн
34+ 65.18 грн
Мінімальне замовлення: 5
CPC1006NTR CPC1006NTR IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Contacts configuration: SPST-NO
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Case: SOP4
Mounting: SMT
товар відсутній
CPC1009N CPC1009N IXYS CPC1009N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Contacts configuration: SPST-NO
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
3+155.2 грн
13+ 68.8 грн
34+ 65.18 грн
Мінімальне замовлення: 3
CPC1009NTR CPC1009NTR IXYS CPC1009N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Contacts configuration: SPST-NO
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
товар відсутній
IXKH47N60C IXKH47N60C IXYS IXKH47N60C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKR47N60C5 IXKR47N60C5 IXYS IXKR47N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+1356.23 грн
2+ 1190.56 грн
DSS10-01AS-TUB IXYS DSS10-01A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK; tube; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
DSSK16-01AS DSSK16-01AS IXYS DSSK16-01A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8Ax2; D2PAK; reel,tape; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
товар відсутній
DSS10-01A DSS10-01A IXYS DSS10-01A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
DSS20-01AC DSS20-01AC IXYS 98787.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; 90W; ISOPLUS220™; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
DSSK16-01A DSSK16-01A IXYS DSSK16-01A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 90W
Heatsink thickness: 1.14...1.39mm
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
4+90.52 грн
Мінімальне замовлення: 4
DSSK30-01A DSSK30-01A IXYS DSSK30-01A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 105W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.64V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 230A
Power dissipation: 105W
товар відсутній
DSSK50-01A DSSK50-01A IXYS DSSK50-01A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Power dissipation: 135W
товар відсутній
DSSS30-01AR DSSS30-01AR IXYS DSSS30-01AR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; ISOPLUS247™; 190W
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 100V
Max. forward voltage: 0.63V
Load current: 30A x2
Type of diode: Schottky rectifying
Power dissipation: 190W
Max. forward impulse current: 600A
товар відсутній
MIXA80R1200VA IXYS MIXA80R1200VA.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 390W
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper
товар відсутній
MIXA150Q1200VA IXYS MIXA150Q1200VA.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 695W
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: buck chopper
товар відсутній
MIXA150R1200VA IXYS MIXA150R1200VA.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 695W
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper
товар відсутній
IXA60IF1200NA IXA60IF1200NA IXYS IXA60IF1200NA.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Technology: XPT™
Collector current: 56A
Power dissipation: 290W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1637.77 грн
IXA70I1200NA IXA70I1200NA IXYS IXA70I1200NA.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+1885.78 грн
2+ 1655.49 грн
IXDN55N120D1 IXDN55N120D1 IXYS IXDN55N120D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Technology: NPT
Collector current: 62A
Power dissipation: 450W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 124A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXDN75N120 IXDN75N120 IXYS IXDN75N120.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXG70IF1200NA IXYS Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
товар відсутній
IXGN50N120C3H1 IXGN50N120C3H1 IXYS IXGN50N120C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
товар відсутній
IXBH42N170 IXBH42N170 IXYS IXBH42N170_IXBT42N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Mounting: THT
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 188nC
Technology: BiMOSFET™; FRED
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 300A
Turn-on time: 224ns
Turn-off time: 1.07µs
Type of transistor: IGBT
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1572.26 грн
2+ 1381.02 грн
IXTA70N075T2 IXTA70N075T2 IXYS IXTA(P)70N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
IXKC19N60C5 IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkc19n60c5_datasheet.pdf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 430ns
товар відсутній
MMIX1G320N60B3 IXYS MMIX1G320N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
товар відсутній
IXBT24N170 IXBH(t)24N170.pdf
IXBT24N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1697.82 грн
2+ 1491.1 грн
3+ 1490.37 грн
10+ 1472.27 грн
IXFH140N10P IXFH(T)140N10P.pdf
IXFH140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+602.08 грн
3+ 400.47 грн
6+ 378.75 грн
IXFT140N10P IXFH(T)140N10P.pdf
IXFT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+609.1 грн
2+ 450.44 грн
6+ 425.82 грн
IXTQ140N10P IXTQ140N10P-DTE.pdf
IXTQ140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTT140N10P IXTQ140N10P-DTE.pdf
IXTT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
CPC3714CTR CPC3714.pdf
CPC3714CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depleted
Gate-source voltage: ±15V
Case: SOT89
Drain-source voltage: 350V
Drain current: 0.24A
On-state resistance: 14Ω
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+68.63 грн
9+ 41.28 грн
25+ 36.93 грн
29+ 30.05 грн
78+ 28.39 грн
Мінімальне замовлення: 6
IXBH6N170 IXBH6N170_IXBT6N170.pdf
IXBH6N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
товар відсутній
MEK250-12DA 96514.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Case: Y4-M6
Type of module: diode
товар відсутній
LCA110 LCA110.pdf
LCA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 108 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+151.3 грн
9+ 97.76 грн
24+ 92.7 грн
Мінімальне замовлення: 3
LCA110L LCA110L.pdf
LCA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110LS LCA110L.pdf
LCA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+224.61 грн
9+ 99.94 грн
24+ 94.14 грн
Мінімальне замовлення: 2
LCA110LSTR LCA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110S lca110.pdf
LCA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+217.59 грн
9+ 94.14 грн
25+ 88.35 грн
Мінімальне замовлення: 2
LCA110STR LCA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
IXTA4N80P IXTA(P)4N80P.pdf
IXTA4N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
товар відсутній
IXTP4N80P IXTA(P)4N80P.pdf
IXTP4N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+172.36 грн
10+ 91.97 грн
26+ 86.9 грн
Мінімальне замовлення: 3
IXGH4N250C DS100320(IXGH-GT4N250C).pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
IXBK64N250 IXBK(X)64N250.pdf
IXBK64N250
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
товар відсутній
IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTN17N120L IXTN17N120L.pdf
IXTN17N120L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXBOD2-04 IXBOD2.pdf
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
товар відсутній
CPC1020N cpc1020n.pdf
CPC1020N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Case: SOP4
Mounting: SMT
на замовлення 457 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+333.01 грн
6+ 143.39 грн
17+ 135.42 грн
Мінімальне замовлення: 2
CPC1020NTR CPC1020N.pdf
CPC1020NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.25Ω
Case: SOP4
Mounting: SMT
товар відсутній
CLA50E1200HB CLA50E1200HB.pdf
CLA50E1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Max. forward impulse current: 0.65kA
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+350.17 грн
3+ 287.5 грн
4+ 258.53 грн
9+ 244.77 грн
30+ 241.15 грн
Мінімальне замовлення: 2
CLA50E1200TC-TUB CLA50E1200TC.pdf
CLA50E1200TC-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+574 грн
3+ 383.82 грн
7+ 362.82 грн
CLA50E1200TC-TRL media?resourcetype=datasheets&itemid=0a7ad2bc-21e4-400c-913e-65dfcb8907e4&filename=Littelfuse-Power-Semiconductors-CLA50E1200TC-Datasheet
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
товар відсутній
MDD26-12N1B MDD26-12N1B-DTE.pdf
MDD26-12N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Case: TO240AA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1349.21 грн
2+ 1184.77 грн
MCC44-16io1B MCC44-16IO1B-DTE.pdf
MCC44-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1865.5 грн
2+ 1638.11 грн
MCD162-16io1 MCD162-16io1.pdf
MCD162-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.6kV
Load current: 181A
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. forward voltage: 1.03V
Case: Y4-M6
Mechanical mounting: screw
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Semiconductor structure: double series
Threshold on-voltage: 0.88V
Max. load current: 300A
Gate current: 150/200mA
Type of module: diode-thyristor
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+4074.15 грн
6+ 3652.79 грн
CPC1001N 1
CPC1001N
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
CTR@If: 100-800%@0.2mA
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
на замовлення 550 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+64.16 грн
20+ 42.51 грн
25+ 42.44 грн
55+ 40.19 грн
500+ 39.32 грн
Мінімальне замовлення: 6
CPC1001NTR CPC1001N.pdf
CPC1001NTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Max. operating current: 0.1A
Switched voltage: max. 30V DC
Operating temperature: -40...85°C
CTR@If: 100-800%@0.2mA
Insulation voltage: 1.5kV
Kind of output: transistor
Number of channels: 1
Turn-off time: 30µs
Turn-on time: 1µs
Control current max.: 5mA
Case: SOP4
Type of optocoupler: optocoupler
Mounting: SMD
товар відсутній
CPC1002N cpc1002n.pdf
CPC1002N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Contacts configuration: SPST-NO
Max. operating current: 700mA
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Case: SOP4
Mounting: SMT
на замовлення 671 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+141.94 грн
14+ 60.83 грн
38+ 57.93 грн
Мінімальне замовлення: 3
CPC1002NTR CPC1002N.pdf
CPC1002NTR
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; OptoMOS; -40÷85°C
Contacts configuration: SPST-NO
Max. operating current: 700mA
Switched voltage: max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 2ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 0.55Ω
Case: SOP4
Mounting: SMT
товар відсутній
CPC1006N CPC1006N.pdf
CPC1006N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Contacts configuration: SPST-NO
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Case: SOP4
Mounting: SMT
на замовлення 3432 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+95.93 грн
13+ 68.8 грн
34+ 65.18 грн
Мінімальне замовлення: 5
CPC1006NTR CPC1006N.pdf
CPC1006NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Contacts configuration: SPST-NO
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
On-state resistance: 10Ω
Case: SOP4
Mounting: SMT
товар відсутній
CPC1009N CPC1009N.pdf
CPC1009N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Contacts configuration: SPST-NO
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
на замовлення 418 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+155.2 грн
13+ 68.8 грн
34+ 65.18 грн
Мінімальне замовлення: 3
CPC1009NTR CPC1009N.pdf
CPC1009NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Contacts configuration: SPST-NO
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Type of relay: solid state
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
Turn-off time: 0.5ms
Turn-on time: 2ms
Control current max.: 50mA
On-state resistance: 8Ω
Case: SOP4
Mounting: SMT
товар відсутній
IXKH47N60C IXKH47N60C.pdf
IXKH47N60C
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
IXKR47N60C5 IXKR47N60C5.pdf
IXKR47N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1356.23 грн
2+ 1190.56 грн
DSS10-01AS-TUB DSS10-01A.pdf
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK; tube; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
DSSK16-01AS DSSK16-01A.pdf
DSSK16-01AS
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8Ax2; D2PAK; reel,tape; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 90W
товар відсутній
DSS10-01A DSS10-01A.pdf
DSS10-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
DSS20-01AC 98787.pdf
DSS20-01AC
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; 90W; ISOPLUS220™; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
DSSK16-01A DSSK16-01A.pdf
DSSK16-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.65V
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 90W
Heatsink thickness: 1.14...1.39mm
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+90.52 грн
Мінімальне замовлення: 4
DSSK30-01A DSSK30-01A.pdf
DSSK30-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 105W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.64V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 230A
Power dissipation: 105W
товар відсутній
DSSK50-01A DSSK50-01A.pdf
DSSK50-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Power dissipation: 135W
товар відсутній
DSSS30-01AR DSSS30-01AR.pdf
DSSS30-01AR
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; ISOPLUS247™; 190W
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Semiconductor structure: double series
Max. off-state voltage: 100V
Max. forward voltage: 0.63V
Load current: 30A x2
Type of diode: Schottky rectifying
Power dissipation: 190W
Max. forward impulse current: 600A
товар відсутній
MIXA80R1200VA MIXA80R1200VA.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 390W
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper
товар відсутній
MIXA150Q1200VA MIXA150Q1200VA.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 695W
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: buck chopper
товар відсутній
MIXA150R1200VA MIXA150R1200VA.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: V1-A-Pack
Power dissipation: 695W
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 450A
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: boost chopper
товар відсутній
IXA60IF1200NA IXA60IF1200NA.pdf
IXA60IF1200NA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Technology: XPT™
Collector current: 56A
Power dissipation: 290W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1637.77 грн
IXA70I1200NA IXA70I1200NA.pdf
IXA70I1200NA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1885.78 грн
2+ 1655.49 грн
IXDN55N120D1 IXDN55N120D1.pdf
IXDN55N120D1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Technology: NPT
Collector current: 62A
Power dissipation: 450W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 124A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXDN75N120 IXDN75N120.pdf
IXDN75N120
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXG70IF1200NA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
товар відсутній
IXGN50N120C3H1 IXGN50N120C3H1.pdf
IXGN50N120C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Power dissipation: 460W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
товар відсутній
IXBH42N170 IXBH42N170_IXBT42N170.pdf
IXBH42N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Mounting: THT
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 188nC
Technology: BiMOSFET™; FRED
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 42A
Pulsed collector current: 300A
Turn-on time: 224ns
Turn-off time: 1.07µs
Type of transistor: IGBT
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1572.26 грн
2+ 1381.02 грн
IXTA70N075T2 IXTA(P)70N075T2.pdf
IXTA70N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
IXKC19N60C5 littelfuse_discrete_mosfets_n-channel_super_junction_ixkc19n60c5_datasheet.pdf.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 430ns
товар відсутній
MMIX1G320N60B3 MMIX1G320N60B3.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
товар відсутній
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