| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IXKC15N60C5 | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 390ns |
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DPG60C400QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 400V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 360A Case: TO3P Max. forward voltage: 1.41V Power dissipation: 160W Reverse recovery time: 45ns Technology: HiPerFRED™ 2nd Gen |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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CLA100PD1200NA | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw Case: SOT227B Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.2kV Gate current: 40/80mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.83V Max. load current: 150A Max. forward voltage: 1.21V Load current: 100A Max. forward impulse current: 1.5kA |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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CLA60PD1200NA | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: SOT227B Max. forward voltage: 1.09V Max. forward impulse current: 935A Electrical mounting: screw Max. load current: 94A Mechanical mounting: screw Kind of package: bulk Gate current: 40/80mA Threshold on-voltage: 0.79V |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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CMA80PD1600NA | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw Max. off-state voltage: 1.6kV Load current: 80A Max. forward impulse current: 1.07kA Electrical mounting: screw Max. forward voltage: 1.29V Case: SOT227B Mechanical mounting: screw Kind of package: bulk Semiconductor structure: double series Max. load current: 126A Type of module: diode-thyristor Threshold on-voltage: 0.86V Gate current: 100/200mA |
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MCD40-16io6 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 40A; SOT227B; Ufmax: 1.29V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 40A Case: SOT227B Max. forward voltage: 1.29V Max. forward impulse current: 425A Electrical mounting: screw Max. load current: 63A Mechanical mounting: screw Kind of package: bulk Gate current: 100/150mA Threshold on-voltage: 0.87V |
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MMO90-16io6 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 600V; 41A; SOT227B; Ufmax: 1.43V; screw Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 0.6kV Load current: 41A Case: SOT227B Max. forward voltage: 1.43V Max. forward impulse current: 860A Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Gate current: 100/200mA |
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CLA110MB1200NA | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V Case: SOT227B Max. off-state voltage: 1.2kV Kind of package: bulk Max. forward voltage: 1.04V Load current: 50A Semiconductor structure: opposing Gate current: 40/80mA Max. forward impulse current: 935A Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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DMA150E1600NA | IXYS |
Category: Diode modules Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.6kV Load current: 150A Case: SOT227B Max. forward voltage: 1.05V Max. forward impulse current: 3kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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DSS2X160-0045A | IXYS |
Category: Diode modules Description: Module: diode; double; 45V; If: 160Ax2; SOT227B; Ufmax: 0.73V; screw Type of module: diode Semiconductor structure: double Max. off-state voltage: 45V Load current: 160A x2 Case: SOT227B Max. forward voltage: 0.73V Max. forward impulse current: 1.6kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
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DSS2X200-0008D | IXYS |
Category: Diode modules Description: Module: diode; double; 8V; If: 200Ax2; SOT227B; Ufmax: 0.15V; screw Type of module: diode Semiconductor structure: double Max. off-state voltage: 8V Load current: 200A x2 Case: SOT227B Max. forward voltage: 0.15V Max. forward impulse current: 1.6kA Electrical mounting: screw Features of semiconductor devices: Schottky Mechanical mounting: screw |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXGN200N60B3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Power dissipation: 830W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; PT Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.2kA |
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IXGN320N60A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B Power dissipation: 735W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; PT Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 170A Pulsed collector current: 1.2kA |
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IXGN400N60A3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B Power dissipation: 830W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; PT Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 190A Pulsed collector current: 800A |
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IXGN400N60B3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Power dissipation: 1kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; PT Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.5kA |
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| MCNA150PD2200YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 235A Max. forward voltage: 1.18V Load current: 150A Semiconductor structure: double series Max. forward impulse current: 4.3kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCNA650PD2200CB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk Type of module: diode-thyristor Case: ComPack Max. off-state voltage: 2.2kV Max. forward voltage: 1.16V Load current: 650A Semiconductor structure: double series Max. forward impulse current: 16kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IXA20PG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 23A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 45A Power dissipation: 130W Technology: ISOPLUS™; Sonic FRD™ |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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IXA30PG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Power dissipation: 150W Technology: ISOPLUS™; Sonic FRD™ |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXA30RG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 30A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 75A Power dissipation: 147W Technology: ISOPLUS™; Sonic FRD™ |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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IXA40RG1200DHGLB | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 43A Case: SMPD-B Electrical mounting: SMT Gate-emitter voltage: ±20V Pulsed collector current: 105A Power dissipation: 215W Technology: ISOPLUS™; Sonic FRD™ |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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CS22-12IO1M | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube Kind of package: tube Max. off-state voltage: 1.2kV Max. load current: 25A Load current: 16A Gate current: 30mA Max. forward impulse current: 300A Type of thyristor: thyristor Mounting: THT Case: TO220FP |
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| IXFH70N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 110A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 165ns |
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IXFN170N65X2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 170A Pulsed drain current: 340A Power dissipation: 1170W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 13mΩ Gate charge: 434nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 270ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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DSB30C30PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; 70W; TO220AB; tube Max. off-state voltage: 30V Case: TO220AB Type of diode: Schottky rectifying Semiconductor structure: common cathode; double Mounting: THT Kind of package: tube Power dissipation: 70W Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.44V Max. forward impulse current: 340A Load current: 15A x2 |
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DSB30C45HB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 70W; TO247-3; tube Max. off-state voltage: 45V Case: TO247-3 Type of diode: Schottky rectifying Semiconductor structure: common cathode; double Mounting: THT Kind of package: tube Power dissipation: 70W Max. forward voltage: 0.54V Max. forward impulse current: 340A Load current: 15A x2 |
на замовлення 277 шт: термін постачання 21-30 дні (днів) |
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DSB30C45PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 70W; TO220AB; tube Max. off-state voltage: 45V Case: TO220AB Type of diode: Schottky rectifying Semiconductor structure: common cathode; double Mounting: THT Kind of package: tube Power dissipation: 70W Heatsink thickness: 1.14...1.39mm Max. forward voltage: 0.55V Max. forward impulse current: 340A Load current: 15A x2 |
на замовлення 1207 шт: термін постачання 21-30 дні (днів) |
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DSB30C60PB | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; 70W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.64V Case: TO220AB Kind of package: tube Max. forward impulse current: 340A Power dissipation: 70W Heatsink thickness: 1.14...1.39mm |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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IXBT16N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXBT16N170AHV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV Technology: BiMOSFET™ Mounting: SMD Case: TO268HV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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CPC1135N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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CPC1135NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
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DSI45-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W Mounting: THT Kind of package: tube Load current: 45A Max. forward voltage: 1.23V Power dissipation: 270W Type of diode: rectifying Max. off-state voltage: 1.6kV Case: TO247-2 Max. forward impulse current: 0.48kA Semiconductor structure: single diode |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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DSI45-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™ Power dissipation: 165W Kind of package: tube Type of diode: rectifying Mounting: THT Case: ISOPLUS247™ Max. off-state voltage: 1.6kV Max. forward voltage: 1.23V Load current: 45A Semiconductor structure: single diode Max. forward impulse current: 410A |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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DMA100A1600NB | IXYS |
Category: Diode modules Description: Module: diode; common anode; 1.6kV; If: 50Ax2; SOT227UI; Ifsm: 725A Type of module: diode Semiconductor structure: common anode Max. off-state voltage: 1.6kV Load current: 50A x2 Case: SOT227UI Max. forward voltage: 1.13V Max. forward impulse current: 725A Electrical mounting: screw Mechanical mounting: screw |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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CLA80E1200HF | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 126A Load current: 80A Gate current: 38mA Case: PLUS247™ Mounting: THT Kind of package: tube Max. forward impulse current: 765A |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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DSSK50-0025B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; 90W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 25V Load current: 25A x2 Power dissipation: 90W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 330A Max. forward voltage: 0.42V |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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DSSK50-015A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 135W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 25A x2 Power dissipation: 135W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.45kA Max. forward voltage: 0.68V |
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| CPC1580P | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: Flatpack 8pin Number of channels: 1 Mounting: SMD Operating temperature: -40...110°C Kind of package: tube |
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| CPC1580PTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: Flatpack 8pin Number of channels: 1 Mounting: SMD Operating temperature: -40...110°C Kind of package: reel; tape |
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| CPC1590P | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: Flatpack 8pin Number of channels: 1 Mounting: SMD Operating temperature: -40...110°C Kind of package: tube |
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| CPC1590PTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: Flatpack 8pin Number of channels: 1 Mounting: SMD Operating temperature: -40...110°C Kind of package: reel; tape |
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FDA217 | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Number of channels: 2 Mounting: THT Operating temperature: -40...85°C Kind of package: tube |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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FDA217S | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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FDA217STR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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IXFH12N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.85Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
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LAA100P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Case: DIP8 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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LAA100PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Case: DIP8 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV |
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| LAA100PLTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Case: DIP8 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV |
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| LAA100PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Case: DIP8 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV |
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DSEP2X101-04A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw Electrical mounting: screw Mechanical mounting: screw Load current: 100A x2 Max. forward voltage: 1.73V Max. off-state voltage: 0.4kV Type of module: diode Case: SOT227B Max. forward impulse current: 1kA Semiconductor structure: double independent |
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FUO22-16N | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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VBO22-16NO8 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 14A Max. forward impulse current: 380A Electrical mounting: THT Version: square Leads: connectors FASTON Case: FO-B Kind of package: bulk |
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| VUO122-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 125A Max. forward impulse current: 1kA Electrical mounting: THT Version: module Max. forward voltage: 1.13V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw |
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CPC1968J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ Body dimensions: 26.2x20x5mm Operating temperature: -40...85°C Mounting: THT On-state resistance: 0.35Ω Max. operating current: 5A Relay variant: Photo MOSFET Control current: 10mA Control voltage: 0.9...1.56V DC Operate time: 4.6ms Release time: 0.07ms Switched voltage: max. 500V DC Control current max.: 100mA Type of relay: solid state |
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IXTP96P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 55ns |
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IXFN520N075T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA Case: SOT227B On-state resistance: 1.9mΩ Technology: GigaMOS™; HiPerFET™; TrenchT2™ Power dissipation: 940W Polarisation: unipolar Drain-source voltage: 75V Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 545nC Reverse recovery time: 150ns Semiconductor structure: single transistor Kind of channel: enhanced Gate-source voltage: ±30V Drain current: 480A Pulsed drain current: 1.5kA |
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IXGR24N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™ Case: PLUS247™ Pulsed collector current: 96A Turn-on time: 54ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 200W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A |
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IXGR55N120A3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 330A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns |
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IXGR6N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 2.5A Power dissipation: 50W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 18.5nC Kind of package: tube Turn-on time: 91ns Turn-off time: 271ns Features of semiconductor devices: high voltage |
товар відсутній |
| IXKC15N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 390ns
товар відсутній
| DPG60C400QB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 400V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO3P
Max. forward voltage: 1.41V
Power dissipation: 160W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 400V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO3P
Max. forward voltage: 1.41V
Power dissipation: 160W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 462.82 грн |
| 3+ | 292.56 грн |
| 8+ | 276.59 грн |
| CLA100PD1200NA |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Case: SOT227B
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.83V
Max. load current: 150A
Max. forward voltage: 1.21V
Load current: 100A
Max. forward impulse current: 1.5kA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Case: SOT227B
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Gate current: 40/80mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.83V
Max. load current: 150A
Max. forward voltage: 1.21V
Load current: 100A
Max. forward impulse current: 1.5kA
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2196.84 грн |
| 2+ | 1928.85 грн |
| 3+ | 1928.13 грн |
| CLA60PD1200NA |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Max. forward impulse current: 935A
Electrical mounting: screw
Max. load current: 94A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.79V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: SOT227B
Max. forward voltage: 1.09V
Max. forward impulse current: 935A
Electrical mounting: screw
Max. load current: 94A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 40/80mA
Threshold on-voltage: 0.79V
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1913.05 грн |
| 2+ | 1679.12 грн |
| CMA80PD1600NA |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 1.07kA
Electrical mounting: screw
Max. forward voltage: 1.29V
Case: SOT227B
Mechanical mounting: screw
Kind of package: bulk
Semiconductor structure: double series
Max. load current: 126A
Type of module: diode-thyristor
Threshold on-voltage: 0.86V
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 80A; SOT227B; Ufmax: 1.29V; screw
Max. off-state voltage: 1.6kV
Load current: 80A
Max. forward impulse current: 1.07kA
Electrical mounting: screw
Max. forward voltage: 1.29V
Case: SOT227B
Mechanical mounting: screw
Kind of package: bulk
Semiconductor structure: double series
Max. load current: 126A
Type of module: diode-thyristor
Threshold on-voltage: 0.86V
Gate current: 100/200mA
товар відсутній
| MCD40-16io6 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 40A; SOT227B; Ufmax: 1.29V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 425A
Electrical mounting: screw
Max. load current: 63A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/150mA
Threshold on-voltage: 0.87V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 40A; SOT227B; Ufmax: 1.29V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 40A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 425A
Electrical mounting: screw
Max. load current: 63A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/150mA
Threshold on-voltage: 0.87V
товар відсутній
| MMO90-16io6 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 600V; 41A; SOT227B; Ufmax: 1.43V; screw
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 0.6kV
Load current: 41A
Case: SOT227B
Max. forward voltage: 1.43V
Max. forward impulse current: 860A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; opposing; 600V; 41A; SOT227B; Ufmax: 1.43V; screw
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 0.6kV
Load current: 41A
Case: SOT227B
Max. forward voltage: 1.43V
Max. forward impulse current: 860A
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 100/200mA
товар відсутній
| CLA110MB1200NA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Case: SOT227B
Max. off-state voltage: 1.2kV
Kind of package: bulk
Max. forward voltage: 1.04V
Load current: 50A
Semiconductor structure: opposing
Gate current: 40/80mA
Max. forward impulse current: 935A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V
Case: SOT227B
Max. off-state voltage: 1.2kV
Kind of package: bulk
Max. forward voltage: 1.04V
Load current: 50A
Semiconductor structure: opposing
Gate current: 40/80mA
Max. forward impulse current: 935A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
на замовлення 96 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1434.59 грн |
| 2+ | 1259.53 грн |
| DMA150E1600NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2297.69 грн |
| 2+ | 2017.42 грн |
| 3+ | 2016.69 грн |
| DSS2X160-0045A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double; 45V; If: 160Ax2; SOT227B; Ufmax: 0.73V; screw
Type of module: diode
Semiconductor structure: double
Max. off-state voltage: 45V
Load current: 160A x2
Case: SOT227B
Max. forward voltage: 0.73V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double; 45V; If: 160Ax2; SOT227B; Ufmax: 0.73V; screw
Type of module: diode
Semiconductor structure: double
Max. off-state voltage: 45V
Load current: 160A x2
Case: SOT227B
Max. forward voltage: 0.73V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
товар відсутній
| DSS2X200-0008D |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double; 8V; If: 200Ax2; SOT227B; Ufmax: 0.15V; screw
Type of module: diode
Semiconductor structure: double
Max. off-state voltage: 8V
Load current: 200A x2
Case: SOT227B
Max. forward voltage: 0.15V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double; 8V; If: 200Ax2; SOT227B; Ufmax: 0.15V; screw
Type of module: diode
Semiconductor structure: double
Max. off-state voltage: 8V
Load current: 200A x2
Case: SOT227B
Max. forward voltage: 0.15V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Features of semiconductor devices: Schottky
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2368.83 грн |
| IXGN200N60B3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
товар відсутній
| IXGN320N60A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Power dissipation: 735W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 170A
Pulsed collector current: 1.2kA
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Power dissipation: 735W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 170A
Pulsed collector current: 1.2kA
товар відсутній
| IXGN400N60A3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Power dissipation: 830W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
товар відсутній
| IXGN400N60B3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Power dissipation: 1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; PT
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
товар відсутній
| MCNA150PD2200YB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 235A
Max. forward voltage: 1.18V
Load current: 150A
Semiconductor structure: double series
Max. forward impulse current: 4.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 235A
Max. forward voltage: 1.18V
Load current: 150A
Semiconductor structure: double series
Max. forward impulse current: 4.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA650PD2200CB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.16V
Load current: 650A
Semiconductor structure: double series
Max. forward impulse current: 16kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.16V
Load current: 650A
Semiconductor structure: double series
Max. forward impulse current: 16kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| IXA20PG1200DHGLB |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 23A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 23A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 130W
Technology: ISOPLUS™; Sonic FRD™
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 787.27 грн |
| 2+ | 619.24 грн |
| 4+ | 585.84 грн |
| 10+ | 579.31 грн |
| IXA30PG1200DHGLB |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 150W
Technology: ISOPLUS™; Sonic FRD™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 150W
Technology: ISOPLUS™; Sonic FRD™
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1046.82 грн |
| 2+ | 782.58 грн |
| 3+ | 739.74 грн |
| IXA30RG1200DHGLB |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 30A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Power dissipation: 147W
Technology: ISOPLUS™; Sonic FRD™
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 648.11 грн |
| 2+ | 546.64 грн |
| 3+ | 541.56 грн |
| 5+ | 516.88 грн |
| 10+ | 504.54 грн |
| 45+ | 497.28 грн |
| IXA40RG1200DHGLB |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 43A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 215W
Technology: ISOPLUS™; Sonic FRD™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 43A
Case: SMPD-B
Electrical mounting: SMT
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Power dissipation: 215W
Technology: ISOPLUS™; Sonic FRD™
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 868.57 грн |
| 2+ | 590.2 грн |
| 4+ | 558.26 грн |
| CS22-12IO1M |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 25A
Load current: 16A
Gate current: 30mA
Max. forward impulse current: 300A
Type of thyristor: thyristor
Mounting: THT
Case: TO220FP
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 25A
Load current: 16A
Gate current: 30mA
Max. forward impulse current: 300A
Type of thyristor: thyristor
Mounting: THT
Case: TO220FP
товар відсутній
| IXFH70N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 165ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 165ns
товар відсутній
| IXFN170N65X2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 270ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 270ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| DSB30C30PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; 70W; TO220AB; tube
Max. off-state voltage: 30V
Case: TO220AB
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Power dissipation: 70W
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.44V
Max. forward impulse current: 340A
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; 70W; TO220AB; tube
Max. off-state voltage: 30V
Case: TO220AB
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Power dissipation: 70W
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.44V
Max. forward impulse current: 340A
Load current: 15A x2
товар відсутній
| DSB30C45HB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 70W; TO247-3; tube
Max. off-state voltage: 45V
Case: TO247-3
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Power dissipation: 70W
Max. forward voltage: 0.54V
Max. forward impulse current: 340A
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 70W; TO247-3; tube
Max. off-state voltage: 45V
Case: TO247-3
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Power dissipation: 70W
Max. forward voltage: 0.54V
Max. forward impulse current: 340A
Load current: 15A x2
на замовлення 277 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.18 грн |
| 3+ | 172.78 грн |
| 6+ | 130.67 грн |
| 17+ | 123.41 грн |
| DSB30C45PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 70W; TO220AB; tube
Max. off-state voltage: 45V
Case: TO220AB
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Power dissipation: 70W
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; 70W; TO220AB; tube
Max. off-state voltage: 45V
Case: TO220AB
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Mounting: THT
Kind of package: tube
Power dissipation: 70W
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Load current: 15A x2
на замовлення 1207 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.65 грн |
| 10+ | 82.76 грн |
| 12+ | 70.42 грн |
| 31+ | 66.79 грн |
| DSB30C60PB |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; 70W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.64V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 340A
Power dissipation: 70W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; 70W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.64V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 340A
Power dissipation: 70W
Heatsink thickness: 1.14...1.39mm
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 106.32 грн |
| 5+ | 89.29 грн |
| 10+ | 78.4 грн |
| 12+ | 70.42 грн |
| 33+ | 66.79 грн |
| IXBT16N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 917.04 грн |
| 3+ | 805.08 грн |
| IXBT16N170AHV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 917.04 грн |
| 3+ | 805.08 грн |
| CPC1135N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.28 грн |
| CPC1135NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| DSI45-16A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Mounting: THT
Kind of package: tube
Load current: 45A
Max. forward voltage: 1.23V
Power dissipation: 270W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Case: TO247-2
Max. forward impulse current: 0.48kA
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Mounting: THT
Kind of package: tube
Load current: 45A
Max. forward voltage: 1.23V
Power dissipation: 270W
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Case: TO247-2
Max. forward impulse current: 0.48kA
Semiconductor structure: single diode
на замовлення 211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.12 грн |
| 3+ | 254.81 грн |
| 5+ | 203.99 грн |
| 12+ | 192.38 грн |
| 120+ | 188.02 грн |
| DSI45-16AR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.51 грн |
| 3+ | 309.98 грн |
| 8+ | 293.28 грн |
| DMA100A1600NB |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.6kV; If: 50Ax2; SOT227UI; Ifsm: 725A
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.6kV
Load current: 50A x2
Case: SOT227UI
Max. forward voltage: 1.13V
Max. forward impulse current: 725A
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common anode; 1.6kV; If: 50Ax2; SOT227UI; Ifsm: 725A
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.6kV
Load current: 50A x2
Case: SOT227UI
Max. forward voltage: 1.13V
Max. forward impulse current: 725A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1398.63 грн |
| 2+ | 1227.58 грн |
| CLA80E1200HF |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 589.47 грн |
| 2+ | 436.3 грн |
| 3+ | 435.57 грн |
| DSSK50-0025B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; 90W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Power dissipation: 90W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 330A
Max. forward voltage: 0.42V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; 90W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Power dissipation: 90W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 330A
Max. forward voltage: 0.42V
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.81 грн |
| 3+ | 222.14 грн |
| 5+ | 168.42 грн |
| 14+ | 158.98 грн |
| DSSK50-015A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 135W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Max. forward voltage: 0.68V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 135W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Max. forward voltage: 0.68V
товар відсутній
| CPC1580P |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
товар відсутній
| CPC1580PTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
товар відсутній
| CPC1590P |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
товар відсутній
| CPC1590PTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
товар відсутній
| FDA217 |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.03 грн |
| 3+ | 221.42 грн |
| 5+ | 172.05 грн |
| 14+ | 162.61 грн |
| FDA217S |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.03 грн |
| 3+ | 221.42 грн |
| 5+ | 170.6 грн |
| 14+ | 161.16 грн |
| FDA217STR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товар відсутній
| IXFH12N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| LAA100P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 508.17 грн |
| 4+ | 227.22 грн |
| 11+ | 214.16 грн |
| LAA100PL |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
товар відсутній
| LAA100PLTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
товар відсутній
| LAA100PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
товар відсутній
| DSEP2X101-04A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Load current: 100A x2
Max. forward voltage: 1.73V
Max. off-state voltage: 0.4kV
Type of module: diode
Case: SOT227B
Max. forward impulse current: 1kA
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Load current: 100A x2
Max. forward voltage: 1.73V
Max. off-state voltage: 0.4kV
Type of module: diode
Case: SOT227B
Max. forward impulse current: 1kA
Semiconductor structure: double independent
товар відсутній
| FUO22-16N |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
на замовлення 152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1104.67 грн |
| 3+ | 969.87 грн |
| VBO22-16NO8 |
|
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
товар відсутній
| VUO122-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
товар відсутній
| CPC1968J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Body dimensions: 26.2x20x5mm
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 0.35Ω
Max. operating current: 5A
Relay variant: Photo MOSFET
Control current: 10mA
Control voltage: 0.9...1.56V DC
Operate time: 4.6ms
Release time: 0.07ms
Switched voltage: max. 500V DC
Control current max.: 100mA
Type of relay: solid state
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Body dimensions: 26.2x20x5mm
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 0.35Ω
Max. operating current: 5A
Relay variant: Photo MOSFET
Control current: 10mA
Control voltage: 0.9...1.56V DC
Operate time: 4.6ms
Release time: 0.07ms
Switched voltage: max. 500V DC
Control current max.: 100mA
Type of relay: solid state
товар відсутній
| IXTP96P085T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
товар відсутній
| IXFN520N075T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 940W
Polarisation: unipolar
Drain-source voltage: 75V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 545nC
Reverse recovery time: 150ns
Semiconductor structure: single transistor
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain current: 480A
Pulsed drain current: 1.5kA
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 940W
Polarisation: unipolar
Drain-source voltage: 75V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 545nC
Reverse recovery time: 150ns
Semiconductor structure: single transistor
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain current: 480A
Pulsed drain current: 1.5kA
товар відсутній
| IXGR24N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Case: PLUS247™
Pulsed collector current: 96A
Turn-on time: 54ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 200W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Case: PLUS247™
Pulsed collector current: 96A
Turn-on time: 54ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 200W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
товар відсутній
| IXGR55N120A3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
| IXGR6N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
товар відсутній