| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXXH60N65C4 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 110ns Turn-off time: 164ns |
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IXXK160N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns |
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| IXXK160N65C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264 Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 422nC Kind of package: tube Turn-on time: 52ns Turn-off time: 197ns |
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IXXX160N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 860A Mounting: THT Gate charge: 425nC Kind of package: tube Turn-on time: 93ns Turn-off time: 380ns |
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| IXXX160N65C4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 940W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 320A Mounting: THT Gate charge: 422nC Kind of package: tube Turn-on time: 52ns Turn-off time: 197ns |
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DSEC16-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W Mounting: THT Case: TO220AB Kind of package: tube Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Max. forward voltage: 2.1V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 30ns Power dissipation: 60W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Heatsink thickness: 1.14...1.39mm |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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DSEC16-06AC | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™ Mounting: THT Case: ISOPLUS220™ Kind of package: tube Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Max. forward voltage: 2.1V Load current: 10A x2 Semiconductor structure: common cathode; double Reverse recovery time: 30ns Power dissipation: 60W Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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| MCMA700PD1600CB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk Type of module: diode-thyristor Case: ComPack Max. off-state voltage: 1.6kV Max. forward voltage: 1.11V Load current: 700A Semiconductor structure: double series Max. forward impulse current: 19kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MDMA60UC1600VC | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 60A; V1-B-Pack; Ifsm: 350A; bulk Max. forward impulse current: 350A Case: V1-B-Pack Max. off-state voltage: 1.6kV Kind of package: bulk Load current: 60A Electrical mounting: FASTON connectors Mechanical mounting: screw Type of module: diode-thyristor Topology: three-phase diode bridge; thyristor |
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IXYP8N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 8A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 48A Mounting: THT Gate charge: 13.3nC Kind of package: tube Turn-on time: 39ns Turn-off time: 238ns |
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IXYP8N90C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Collector current: 8A Power dissipation: 125W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 48A Mounting: THT Gate charge: 13.3nC Kind of package: tube Turn-on time: 39ns Turn-off time: 238ns |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
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IXTA160N04T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 250W Case: TO263 On-state resistance: 5mΩ Mounting: SMD Gate charge: 79nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IXTN660N04T4 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA Technology: TrenchT4™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 660A Pulsed drain current: 1.8kA Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±15V On-state resistance: 0.85mΩ Gate charge: 0.86µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 60ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXTP160N04T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 250W Case: TO220AB On-state resistance: 5mΩ Mounting: THT Gate charge: 79nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 40ns |
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IXFA7N100P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns Mounting: SMD Kind of package: tube Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 7A On-state resistance: 1.9Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 47nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Case: TO263 |
на замовлення 260 шт: термін постачання 21-30 дні (днів) |
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IXFH7N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3 Mounting: THT Kind of package: tube Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 7A On-state resistance: 1.9Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 47nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 |
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IXFP7N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB Mounting: THT Kind of package: tube Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 7A On-state resistance: 1.9Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Gate charge: 47nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Case: TO220AB |
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IXFN50N120SIC | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns Semiconductor structure: single transistor Reverse recovery time: 26ns Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 50mΩ Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 0.1µC Technology: HiPerFET™; SiC Kind of channel: enhanced Gate-source voltage: -10...25V Case: SOT227B |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| MCB20P1200LB-TRR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Technology: SiC Case: SMPD-B Mounting: SMD On-state resistance: 98mΩ Kind of package: reel; tape Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: -5...20V Drain-source voltage: 1.2kV Drain current: 25.5A Type of transistor: N-MOSFET Semiconductor structure: double series Polarisation: unipolar |
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MCB20P1200LB-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Technology: SiC Case: SMPD-B Mounting: SMD On-state resistance: 98mΩ Kind of package: tube Gate charge: 62nC Kind of channel: enhanced Gate-source voltage: -5...20V Drain-source voltage: 1.2kV Drain current: 25.5A Type of transistor: N-MOSFET Semiconductor structure: double series Polarisation: unipolar |
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| MCB30P1200LB-TRR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: double series |
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| MCB30P1200LB-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 115nC Kind of package: tube Kind of channel: enhanced Semiconductor structure: double series |
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IXYH40N90C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 180A Turn-on time: 81ns Turn-off time: 237ns Type of transistor: IGBT Power dissipation: 500W Gate charge: 74nC |
на замовлення 216 шт: термін постачання 21-30 дні (днів) |
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IXFH12N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 463W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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IXTH12N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 400W Case: TO247-3 On-state resistance: 1.3Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
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IXFH12N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Power dissipation: 543W Case: TO247-3 Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhanced |
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IXGA12N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Type of transistor: IGBT Power dissipation: 100W Kind of package: tube Case: TO263 Gate charge: 20.4nC Technology: GenX3™; PT Mounting: SMD |
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IXGH12N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns |
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IXGP12N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 12A Power dissipation: 100W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 20.4nC Kind of package: tube Turn-on time: 202ns Turn-off time: 1545ns |
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DSSK80-003B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 30V; 40Ax2; 155W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 40A x2 Power dissipation: 155W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 600A Max. forward voltage: 0.39V |
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IXGK82N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs |
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IXGK82N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns |
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IXFH140N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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IXFN140N20P | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 115A Pulsed drain current: 280A Power dissipation: 680W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 18mΩ Gate charge: 240nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 150ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFR140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 22mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced |
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IXFT140N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO268 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 127nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
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IXFH46N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Power dissipation: 660W Case: TO247-3 On-state resistance: 69mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 180ns |
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| IXFH46N65X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Pulsed drain current: 65A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 165ns |
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VBO40-16NO6 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 320A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 40A Max. forward impulse current: 320A Electrical mounting: screw Mechanical mounting: screw Version: module Leads: M4 screws Case: SOT227B |
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IXTK550N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Power dissipation: 1.25kW Case: TO264 On-state resistance: 1.6mΩ Mounting: THT Gate charge: 595nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
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IXTN550N055T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 1.65kA Power dissipation: 940W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 1.3mΩ Gate charge: 595nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 100ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXTX550N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 1.6mΩ Mounting: THT Gate charge: 595nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
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| IXTZ550N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Power dissipation: 600W Case: DE475 On-state resistance: 1mΩ Mounting: SMD Gate charge: 595nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
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MMIX1T550N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W Type of transistor: N-MOSFET Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 2kA Power dissipation: 830W Case: SMPD Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 595nC Kind of channel: enhanced Reverse recovery time: 100ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFL60N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 40A Power dissipation: 625W Case: ISOPLUS264™ Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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| LF2136BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Output current: -350...200mA Operating temperature: -40...125°C Mounting: SMD Supply voltage: 10...20V Case: SO28 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 600V Type of integrated circuit: driver Number of channels: 6 |
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LF2388BTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO20 Output current: -750...420mA Number of channels: 6 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V |
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IXFH220N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A |
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IXFK220N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264 Case: TO264 Mounting: THT Kind of package: tube On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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IXFT220N20X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268 Case: TO268 Mounting: SMD Kind of package: tube On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A |
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IXFA220N06T3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns |
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IXFH220N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXFP220N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 220A Power dissipation: 440W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 38ns |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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MCC26-08io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 0.8kV Max. forward voltage: 1.65V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA |
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MCC26-08io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 0.8kV Max. forward voltage: 1.65V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA |
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MCC26-12io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V Case: TO240AA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.2kV Max. forward voltage: 1.27V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 440A |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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MCC26-14io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.4kV Max. forward voltage: 1.65V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA |
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MCC26-14io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.4kV Max. forward voltage: 1.65V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA |
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MCC26-16io8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V Case: TO240AA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.6kV Max. forward voltage: 1.65V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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CPC1150N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Case: SOP4 Mounting: SMT On-state resistance: 50Ω Operating temperature: -40...85°C Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NC Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Manufacturer series: OptoMOS Turn-on time: 1ms Turn-off time: 2ms Body dimensions: 4.09x3.81x2.03mm |
на замовлення 618 шт: термін постачання 21-30 дні (днів) |
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| IXXH60N65C4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 260A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 164ns
товар відсутній
| IXXK160N65B4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
товар відсутній
| IXXK160N65C4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
товар відсутній
| IXXX160N65B4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
товар відсутній
| IXXX160N65C4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Mounting: THT
Gate charge: 422nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 197ns
товар відсутній
| DSEC16-06A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Heatsink thickness: 1.14...1.39mm
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.46 грн |
| 8+ | 116.15 грн |
| 20+ | 109.62 грн |
| DSEC16-06AC |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 30ns
Power dissipation: 60W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 259.56 грн |
| 3+ | 216.33 грн |
| 5+ | 172.78 грн |
| 14+ | 163.34 грн |
| MCMA700PD1600CB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.11V
Load current: 700A
Semiconductor structure: double series
Max. forward impulse current: 19kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 700A; ComPack; Ufmax: 1.11V; bulk
Type of module: diode-thyristor
Case: ComPack
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.11V
Load current: 700A
Semiconductor structure: double series
Max. forward impulse current: 19kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MDMA60UC1600VC |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; V1-B-Pack; Ifsm: 350A; bulk
Max. forward impulse current: 350A
Case: V1-B-Pack
Max. off-state voltage: 1.6kV
Kind of package: bulk
Load current: 60A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: diode-thyristor
Topology: three-phase diode bridge; thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; V1-B-Pack; Ifsm: 350A; bulk
Max. forward impulse current: 350A
Case: V1-B-Pack
Max. off-state voltage: 1.6kV
Kind of package: bulk
Load current: 60A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Type of module: diode-thyristor
Topology: three-phase diode bridge; thyristor
товар відсутній
| IXYP8N90C3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
товар відсутній
| IXYP8N90C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 8A
Power dissipation: 125W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 238ns
на замовлення 147 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 293.17 грн |
| 3+ | 244.65 грн |
| 5+ | 195.28 грн |
| 12+ | 185.12 грн |
| IXTA160N04T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.32 грн |
| 3+ | 196.73 грн |
| 6+ | 156.81 грн |
| 15+ | 148.09 грн |
| IXTN660N04T4 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA
Technology: TrenchT4™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 660A
Pulsed drain current: 1.8kA
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 0.85mΩ
Gate charge: 0.86µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 60ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 660A; SOT227B; screw; Idm: 1.8kA
Technology: TrenchT4™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 660A
Pulsed drain current: 1.8kA
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 0.85mΩ
Gate charge: 0.86µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 60ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXTP160N04T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товар відсутній
| IXFA7N100P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Mounting: SMD
Kind of package: tube
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns
Mounting: SMD
Kind of package: tube
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO263
на замовлення 260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 390.11 грн |
| 3+ | 325.95 грн |
| 4+ | 256.26 грн |
| 9+ | 241.74 грн |
| IXFH7N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO247-3
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247-3
товар відсутній
| IXFP7N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO220AB
товар відсутній
| IXFN50N120SIC |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
Semiconductor structure: single transistor
Reverse recovery time: 26ns
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.1µC
Technology: HiPerFET™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Case: SOT227B
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; 100nC; 26ns
Semiconductor structure: single transistor
Reverse recovery time: 26ns
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 50mΩ
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.1µC
Technology: HiPerFET™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...25V
Case: SOT227B
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4993.31 грн |
| MCB20P1200LB-TRR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 98mΩ
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 25.5A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 98mΩ
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 25.5A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
товар відсутній
| MCB20P1200LB-TUB |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 98mΩ
Kind of package: tube
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 25.5A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 98mΩ
Kind of package: tube
Gate charge: 62nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 25.5A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
товар відсутній
| MCB30P1200LB-TRR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
| MCB30P1200LB-TUB |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
| IXYH40N90C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 81ns
Turn-off time: 237ns
Type of transistor: IGBT
Power dissipation: 500W
Gate charge: 74nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 180A
Turn-on time: 81ns
Turn-off time: 237ns
Type of transistor: IGBT
Power dissipation: 500W
Gate charge: 74nC
на замовлення 216 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 681.72 грн |
| 2+ | 458.08 грн |
| 3+ | 457.35 грн |
| 6+ | 432.67 грн |
| IXFH12N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| IXTH12N100L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товар відсутній
| IXFH12N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 12A; 543W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Power dissipation: 543W
Case: TO247-3
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXGA12N120A3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Case: TO263
Gate charge: 20.4nC
Technology: GenX3™; PT
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 12A
Pulsed collector current: 60A
Turn-on time: 202ns
Turn-off time: 1545ns
Type of transistor: IGBT
Power dissipation: 100W
Kind of package: tube
Case: TO263
Gate charge: 20.4nC
Technology: GenX3™; PT
Mounting: SMD
товар відсутній
| IXGH12N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товар відсутній
| IXGP12N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 12A
Power dissipation: 100W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 20.4nC
Kind of package: tube
Turn-on time: 202ns
Turn-off time: 1545ns
товар відсутній
| DSSK80-003B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 40Ax2; 155W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 40A x2
Power dissipation: 155W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 600A
Max. forward voltage: 0.39V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 40Ax2; 155W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 40A x2
Power dissipation: 155W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 600A
Max. forward voltage: 0.39V
товар відсутній
| IXGK82N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
товар відсутній
| IXGK82N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
товар відсутній
| IXFH140N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 846.68 грн |
| 2+ | 633.03 грн |
| 4+ | 598.18 грн |
| 30+ | 580.03 грн |
| IXFN140N20P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 150ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFR140N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT140N20X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
товар відсутній
| IXFH46N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
товар відсутній
| IXFH46N65X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 65A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 165ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 46A; Idm: 65A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 65A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 165ns
товар відсутній
| VBO40-16NO6 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 320A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M4 screws
Case: SOT227B
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 320A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Leads: M4 screws
Case: SOT227B
товар відсутній
| IXTK550N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній
| IXTN550N055T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 1.65kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 595nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 55V; 550A; SOT227B; screw; Idm: 1.65kA
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 1.65kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 595nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 100ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXTX550N055T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній
| IXTZ550N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 600W
Case: DE475
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 600W
Case: DE475
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній
| MMIX1T550N055T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhanced
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhanced
Reverse recovery time: 100ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2758.95 грн |
| IXFL60N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| LF2136BTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -350...200mA
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V
Case: SO28
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Type of integrated circuit: driver
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -350...200mA
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V
Case: SO28
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
Type of integrated circuit: driver
Number of channels: 6
товар відсутній
| LF2388BTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO20
Output current: -750...420mA
Number of channels: 6
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO20
Output current: -750...420mA
Number of channels: 6
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
товар відсутній
| IXFH220N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
товар відсутній
| IXFK220N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1099.98 грн |
| 3+ | 966.24 грн |
| 25+ | 944.46 грн |
| IXFT220N20X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 116ns
Drain-source voltage: 200V
Drain current: 220A
товар відсутній
| IXFA220N06T3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
товар відсутній
| IXFH220N06T3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 377.61 грн |
| 3+ | 315.06 грн |
| 4+ | 254.08 грн |
| 10+ | 240.29 грн |
| IXFP220N06T3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO220AB; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 38ns
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.54 грн |
| 3+ | 192.38 грн |
| 5+ | 175.68 грн |
| 10+ | 172.78 грн |
| 14+ | 165.52 грн |
| 50+ | 161.16 грн |
| MCC26-08io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
товар відсутній
| MCC26-08io8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
товар відсутній
| MCC26-12io8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 440A
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 440A
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1490.88 грн |
| 2+ | 1308.89 грн |
| MCC26-14io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
товар відсутній
| MCC26-14io8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
товар відсутній
| MCC26-16io8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.65V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.65V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1636.29 грн |
| CPC1150N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
Mounting: SMT
On-state resistance: 50Ω
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
Mounting: SMT
On-state resistance: 50Ω
Operating temperature: -40...85°C
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NC
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
на замовлення 618 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.18 грн |
| 10+ | 89.29 грн |
| 27+ | 84.21 грн |