IXYX100N65B3D1 IXYS
Виробник: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 460A
Turn-on time: 65ns
Turn-off time: 358ns
Type of transistor: IGBT
Gate charge: 168nC
кількість в упаковці: 1 шт
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Технічний опис IXYX100N65B3D1 IXYS
Description: IGBT PT 650V 225A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 156 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 29ns/150ns, Switching Energy: 1.27mJ (on), 1.37mJ (off), Test Condition: 400V, 50A, 3Ohm, 15V, Gate Charge: 168 nC, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 460 A, Power - Max: 830 W.
Інші пропозиції IXYX100N65B3D1
| Фото | Назва | Виробник | Інформація |
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IXYX100N65B3D1 | Виробник : IXYS |
Description: IGBT PT 650V 225A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 156 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 29ns/150ns Switching Energy: 1.27mJ (on), 1.37mJ (off) Test Condition: 400V, 50A, 3Ohm, 15V Gate Charge: 168 nC Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 460 A Power - Max: 830 W |
товар відсутній |
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IXYX100N65B3D1 | Виробник : IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-247AD |
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IXYX100N65B3D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™ Mounting: THT Kind of package: tube Case: PLUS247™ Power dissipation: 830W Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 460A Turn-on time: 65ns Turn-off time: 358ns Type of transistor: IGBT Gate charge: 168nC |
товар відсутній |