| Фото | Назва | Виробник | Інформація |
Доступність |
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DSEP8-06B | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 50A; TO220AC; 60W; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 50A Case: TO220AC Max. forward voltage: 2.67V Heatsink thickness: 1.14...1.39mm Power dissipation: 60W Reverse recovery time: 30ns Technology: HiPerFRED™ |
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DSEP8-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 40A Case: TO220AC Max. forward voltage: 1.96V Power dissipation: 60W Reverse recovery time: 40ns Technology: HiPerFRED™ |
на замовлення 394 шт: термін постачання 21-30 дні (днів) |
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MCC21-08IO8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 800V; 21A; TO240AA; Ufmax: 2.2V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 21A Case: TO240AA Max. forward voltage: 2.2V Gate current: 65/80mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MMO62-12IO6 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V Type of module: thyristor Semiconductor structure: opposing Max. off-state voltage: 1.2kV Load current: 30A Case: SOT227B Max. forward voltage: 1.29V Max. forward impulse current: 0.4kA Gate current: 100mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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DSEP30-12CR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 250A Case: ISOPLUS247™ Max. forward voltage: 4.98V Power dissipation: 250W Reverse recovery time: 15ns Technology: HiPerDynFRED |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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DSP8-08A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 120A Case: TO220AB Kind of package: tube Max. forward voltage: 1.16V Mounting: THT Semiconductor structure: double series Power dissipation: 100W Type of diode: rectifying Heatsink thickness: 1.14...1.39mm |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| DSP8-08AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 120A Case: D2PAK Kind of package: tube Max. forward voltage: 1.08V Mounting: SMD Semiconductor structure: double series Power dissipation: 100W Type of diode: rectifying |
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| DSP8-08S-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 120A Case: D2PAK Kind of package: tube Max. forward voltage: 1.08V Mounting: SMD Semiconductor structure: double series Power dissipation: 100W Type of diode: rectifying |
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DSP8-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: TO220AB Max. forward voltage: 1.08V Max. forward impulse current: 100A Power dissipation: 100W Kind of package: tube |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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DSP8-12AS-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: D2PAK Max. forward voltage: 1.08V Max. forward impulse current: 120kA Power dissipation: 100W Kind of package: reel; tape |
на замовлення 798 шт: термін постачання 21-30 дні (днів) |
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DSP8-12AS-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: D2PAK Max. forward voltage: 1.08V Max. forward impulse current: 120A Power dissipation: 100W Kind of package: tube |
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| DSP8-12S-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: double series Case: D2PAK Max. forward voltage: 1.08V Max. forward impulse current: 120A Power dissipation: 100W Kind of package: tube |
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VVZ40-16IO1 | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 45A; module Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 45A Max. forward impulse current: 320A Electrical mounting: FASTON connectors Leads: connectors 2,0x0,5mm Case: V1-B-Pack Version: module Mechanical mounting: screw Max. forward voltage: 1.52V Gate current: 65/80mA |
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IXBA16N170AHV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263 Mounting: SMD Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Technology: BiMOSFET™ Case: TO263 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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CPC1945Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; 0.34Ω Type of relay: solid state Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 120V AC Relay variant: 1-phase On-state resistance: 0.34Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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IXCP10M45S | IXYS |
Category: Integrated circuits - others Description: IC: driver; current regulator; TO220AB; 450V; 40W; 2÷100mA Operating temperature: -55...150°C Type of integrated circuit: driver Operating current: 2...100mA Power dissipation: 40W Case: TO220AB Mounting: THT Kind of integrated circuit: current regulator Operating voltage: 450V |
на замовлення 198 шт: термін постачання 21-30 дні (днів) |
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IXCP10M90S | IXYS |
Category: Integrated circuits - others Description: IC: driver; current regulator; TO220AB; 900V; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO220AB Mounting: THT Operating temperature: -55...150°C Operating voltage: 900V Power dissipation: 40W Operating current: 2...100mA |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
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IXCY10M45S | IXYS |
Category: Integrated circuits - others Description: IC: driver; current regulator; TO252; 450V; 40W; 2÷100mA Operating temperature: -55...150°C Type of integrated circuit: driver Operating current: 2...100mA Power dissipation: 40W Case: TO252 Mounting: SMD Kind of integrated circuit: current regulator Operating voltage: 450V |
на замовлення 171 шт: термін постачання 21-30 дні (днів) |
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IXCY10M90S | IXYS |
Category: Integrated circuits - others Description: IC: driver; current regulator; TO252; 900V; 40W; 2÷100mA Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: TO252 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 900V Power dissipation: 40W Operating current: 2...100mA |
на замовлення 297 шт: термін постачання 21-30 дні (днів) |
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CPC3960ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.1A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 44Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 947 шт: термін постачання 21-30 дні (днів) |
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IXXN200N60B3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 160A Pulsed collector current: 1kA Power dissipation: 940W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ |
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IXXN200N60B3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A Pulsed collector current: 1kA Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ |
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IXXN200N60C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A Pulsed collector current: 1kA Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ |
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IXXN200N65A4 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B Case: SOT227B Max. off-state voltage: 650V Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.2kA Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX4™; XPT™ |
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CPC3909CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.3A Power dissipation: 1.1W Case: SOT89 Gate-source voltage: ±15V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
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IXTA4N70X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 11.8nC Kind of package: tube Kind of channel: enhanced |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IXTU4N70X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Pulsed drain current: 8A Power dissipation: 80W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 11.8nC Kind of package: tube Kind of channel: enhanced |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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CPC3980ZTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.1A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 942 шт: термін постачання 21-30 дні (днів) |
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CPC3982TTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23 Kind of package: reel; tape Drain-source voltage: 800V Drain current: 0.15A On-state resistance: 380Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Kind of channel: depleted Gate-source voltage: ±15V Mounting: SMD Case: SOT23 |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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IXFH20N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Power dissipation: 500W Case: TO247-3 On-state resistance: 0.52Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
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IXFH24N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
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IXFK24N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 24A Power dissipation: 650W Case: TO264 On-state resistance: 0.4Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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IXFK27N80Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 27A Power dissipation: 481W Case: TO264 On-state resistance: 0.32Ω Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced |
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IXFK32N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 32A Power dissipation: 830W Case: TO264 On-state resistance: 0.27Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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IXFK32N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 32A Power dissipation: 1kW Case: TO264 On-state resistance: 0.27Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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IXFK34N80 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Power dissipation: 568W Case: TO264 On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhanced |
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IXFK44N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.04kW Case: TO264 On-state resistance: 0.19Ω Mounting: THT Gate charge: 198nC Kind of package: tube Kind of channel: enhanced |
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IXFK44N80Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 44A Power dissipation: 1.25kW Case: TO264 On-state resistance: 0.19Ω Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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DLA60I1200HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Max. forward voltage: 1.1V Case: TO247-2 Kind of package: tube Max. forward impulse current: 850A Power dissipation: 500W |
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MXHV9910B | IXYS |
Category: LED drivers Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 280mA Output voltage: 12V Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Input voltage: 8...450V Frequency: 64kHz Kind of package: tube |
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| MXHV9910BE | IXYS |
Category: LED drivers Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V Type of integrated circuit: driver Topology: buck Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Output current: 280mA Output voltage: 12V Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Input voltage: 8...450V Frequency: 64kHz Kind of package: tube |
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| MXHV9910BETR | IXYS |
Category: LED drivers Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V Type of integrated circuit: driver Topology: buck Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8-EP Output current: 280mA Output voltage: 12V Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Input voltage: 8...450V Frequency: 64kHz Kind of package: reel; tape |
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MXHV9910BTR | IXYS |
Category: LED drivers Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver Case: SO8 Output current: 280mA Output voltage: 12V Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Input voltage: 8...450V Frequency: 64kHz Kind of package: reel; tape |
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IXTA08N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
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IXTP08N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO220AB On-state resistance: 4.6Ω Mounting: THT Gate charge: 312nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
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IXTY08N50D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO252 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
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IXTQ76N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO3P On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| IXYH75N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3 Type of transistor: IGBT Technology: GenX4™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 1.15kW Case: TO247; TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 157nC Kind of package: tube Turn-on time: 24ns Turn-off time: 235ns |
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CPC2025N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
на замовлення 216 шт: термін постачання 21-30 дні (днів) |
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| CPC2025NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 1ms Kind of output: MOSFET |
товар відсутній |
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MCC56-14io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.4kV Max. forward voltage: 1.62V Load current: 60A Semiconductor structure: double series Gate current: 100/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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PAA132 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET |
товар відсутній |
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PAA132S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET |
товар відсутній |
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| PAA132STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.6A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET |
товар відсутній |
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| MDMA660U1600PTEH | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 660A Max. forward impulse current: 5kA Electrical mounting: Press-Fit Version: module Case: E3-Pack Mechanical mounting: screw |
товар відсутній |
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| MDMA900U1600PTEH | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; 1.6kV; If: 900A; Ifsm: 8kA; module Electrical mounting: Press-Fit Mechanical mounting: screw Case: E3-Pack Version: module Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 900A Max. forward impulse current: 8kA |
товар відсутній |
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| MDNA660U2200PTEH | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA Max. off-state voltage: 2.2kV Load current: 660A Case: E3-Pack Version: module Max. forward voltage: 1.28V Max. forward impulse current: 5kA Electrical mounting: Press-Fit Mechanical mounting: screw Type of bridge rectifier: three-phase |
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CPC5712U | IXYS |
Category: Drivers - integrated circuits Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V Type of integrated circuit: driver Case: SOP16 Output current: -500...500µA Supply voltage: 3...5.5V Mounting: SMD Operating temperature: -40...85°C |
товар відсутній |
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IXFA270N06T3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 47ns |
товар відсутній |
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IXFP270N06T3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns Type of transistor: N-MOSFET Technology: HiPerFET™; TrenchT3™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 480W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 47ns |
товар відсутній |
| DSEP8-06B |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 50A; TO220AC; 60W; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: TO220AC
Max. forward voltage: 2.67V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 60W
Reverse recovery time: 30ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 50A; TO220AC; 60W; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 50A
Case: TO220AC
Max. forward voltage: 2.67V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 60W
Reverse recovery time: 30ns
Technology: HiPerFRED™
товар відсутній
| DSEP8-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: TO220AC
Max. forward voltage: 1.96V
Power dissipation: 60W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 40A; TO220AC; 60W; 40ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 40A
Case: TO220AC
Max. forward voltage: 1.96V
Power dissipation: 60W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 394 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.26 грн |
| 10+ | 87.11 грн |
| 27+ | 82.03 грн |
| 250+ | 79.85 грн |
| MCC21-08IO8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 21A; TO240AA; Ufmax: 2.2V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 21A
Case: TO240AA
Max. forward voltage: 2.2V
Gate current: 65/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 21A; TO240AA; Ufmax: 2.2V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 21A
Case: TO240AA
Max. forward voltage: 2.2V
Gate current: 65/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MMO62-12IO6 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Gate current: 100mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 30A; SOT227B; Ufmax: 1.29V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.2kV
Load current: 30A
Case: SOT227B
Max. forward voltage: 1.29V
Max. forward impulse current: 0.4kA
Gate current: 100mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2017.81 грн |
| 2+ | 1772.05 грн |
| 3+ | 1771.32 грн |
| DSEP30-12CR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 4.98V
Power dissipation: 250W
Reverse recovery time: 15ns
Technology: HiPerDynFRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 4.98V
Power dissipation: 250W
Reverse recovery time: 15ns
Technology: HiPerDynFRED
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 789.61 грн |
| 2+ | 497.28 грн |
| 5+ | 470.42 грн |
| DSP8-08A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.16V
Mounting: THT
Semiconductor structure: double series
Power dissipation: 100W
Type of diode: rectifying
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 120A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.16V
Mounting: THT
Semiconductor structure: double series
Power dissipation: 100W
Type of diode: rectifying
Heatsink thickness: 1.14...1.39mm
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.12 грн |
| 9+ | 104.54 грн |
| 23+ | 98.73 грн |
| DSP8-08AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 120A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.08V
Mounting: SMD
Semiconductor structure: double series
Power dissipation: 100W
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 120A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.08V
Mounting: SMD
Semiconductor structure: double series
Power dissipation: 100W
Type of diode: rectifying
товар відсутній
| DSP8-08S-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 120A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.08V
Mounting: SMD
Semiconductor structure: double series
Power dissipation: 100W
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 120A
Case: D2PAK
Kind of package: tube
Max. forward voltage: 1.08V
Mounting: SMD
Semiconductor structure: double series
Power dissipation: 100W
Type of diode: rectifying
товар відсутній
| DSP8-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.08V
Max. forward impulse current: 100A
Power dissipation: 100W
Kind of package: tube
на замовлення 209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.67 грн |
| 8+ | 105.26 грн |
| 22+ | 99.46 грн |
| DSP8-12AS-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120kA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120kA
Power dissipation: 100W
Kind of package: reel; tape
на замовлення 798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.39 грн |
| 5+ | 170.6 грн |
| 6+ | 152.45 грн |
| 16+ | 144.46 грн |
| 100+ | 143.01 грн |
| DSP8-12AS-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
товар відсутній
| DSP8-12S-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
товар відсутній
| VVZ40-16IO1 |
|
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 45A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 320A
Electrical mounting: FASTON connectors
Leads: connectors 2,0x0,5mm
Case: V1-B-Pack
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.52V
Gate current: 65/80mA
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 45A; module
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 45A
Max. forward impulse current: 320A
Electrical mounting: FASTON connectors
Leads: connectors 2,0x0,5mm
Case: V1-B-Pack
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.52V
Gate current: 65/80mA
товар відсутній
| IXBA16N170AHV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Mounting: SMD
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO263
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263
Mounting: SMD
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Technology: BiMOSFET™
Case: TO263
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1552.64 грн |
| 2+ | 1363.34 грн |
| 3+ | 1362.61 грн |
| CPC1945Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; 0.34Ω
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 120V AC
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; 0.34Ω
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 120V AC
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 429.99 грн |
| 5+ | 182.21 грн |
| 13+ | 172.05 грн |
| IXCP10M45S |
|
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450V; 40W; 2÷100mA
Operating temperature: -55...150°C
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of integrated circuit: current regulator
Operating voltage: 450V
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450V; 40W; 2÷100mA
Operating temperature: -55...150°C
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of integrated circuit: current regulator
Operating voltage: 450V
на замовлення 198 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.26 грн |
| 7+ | 125.59 грн |
| 19+ | 119.06 грн |
| IXCP10M90S |
|
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900V; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V
Power dissipation: 40W
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900V; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 156 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.14 грн |
| 3+ | 199.64 грн |
| 5+ | 178.58 грн |
| 13+ | 169.15 грн |
| 50+ | 166.97 грн |
| IXCY10M45S |
|
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450V; 40W; 2÷100mA
Operating temperature: -55...150°C
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450V; 40W; 2÷100mA
Operating temperature: -55...150°C
Type of integrated circuit: driver
Operating current: 2...100mA
Power dissipation: 40W
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V
на замовлення 171 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 177.47 грн |
| 5+ | 148.09 грн |
| 8+ | 118.33 грн |
| 20+ | 111.8 грн |
| IXCY10M90S |
|
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900V; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V
Power dissipation: 40W
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900V; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 297 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 269.72 грн |
| 5+ | 180.04 грн |
| 13+ | 170.6 грн |
| CPC3960ZTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 947 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.05 грн |
| 10+ | 38.77 грн |
| 25+ | 35.72 грн |
| 30+ | 28.02 грн |
| 83+ | 26.5 грн |
| IXXN200N60B3 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1kA
Power dissipation: 940W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
товар відсутній
| IXXN200N60B3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
товар відсутній
| IXXN200N60C3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W
Case: SOT227B
Max. off-state voltage: 0.6kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 98A
Pulsed collector current: 1kA
Power dissipation: 780W
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX3™; XPT™
товар відсутній
| IXXN200N65A4 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Case: SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX4™; XPT™
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 200A; SOT227B
Case: SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.2kA
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: GenX4™; XPT™
товар відсутній
| CPC3909CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.3A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.3A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
товар відсутній
| IXTA4N70X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.81 грн |
| 7+ | 124.86 грн |
| 19+ | 117.6 грн |
| IXTU4N70X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 68 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.78 грн |
| 5+ | 144.46 грн |
| 8+ | 115.43 грн |
| 21+ | 108.89 грн |
| CPC3980ZTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 942 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 74.27 грн |
| 9+ | 44.14 грн |
| 25+ | 40 грн |
| 27+ | 31.72 грн |
| 73+ | 29.98 грн |
| CPC3982TTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Kind of package: reel; tape
Drain-source voltage: 800V
Drain current: 0.15A
On-state resistance: 380Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Kind of channel: depleted
Gate-source voltage: ±15V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Kind of package: reel; tape
Drain-source voltage: 800V
Drain current: 0.15A
On-state resistance: 380Ω
Type of transistor: N-MOSFET
Power dissipation: 0.4W
Polarisation: unipolar
Kind of channel: depleted
Gate-source voltage: ±15V
Mounting: SMD
Case: SOT23
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.13 грн |
| 25+ | 22 грн |
| IXFH20N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH24N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK24N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 831.83 грн |
| 2+ | 557.53 грн |
| IXFK27N80Q |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK32N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 830W
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 830W
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK32N80Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 32A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1522.93 грн |
| 2+ | 1337.2 грн |
| 3+ | 1336.48 грн |
| IXFK34N80 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK44N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK44N80Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2244.53 грн |
| DLA60I1200HA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 850A
Power dissipation: 500W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 850A; TO247-2; 500W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 850A
Power dissipation: 500W
товар відсутній
| MXHV9910B |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 280mA
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 280mA
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
товар відсутній
| MXHV9910BE |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 280mA
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 280mA
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: tube
товар відсутній
| MXHV9910BETR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 280mA
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Output current: 280mA
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
товар відсутній
| MXHV9910BTR |
|
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 280mA
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 280mA
Output voltage: 12V
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 8...450V
Frequency: 64kHz
Kind of package: reel; tape
товар відсутній
| IXTA08N50D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
товар відсутній
| IXTP08N50D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
товар відсутній
| IXTY08N50D2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
товар відсутній
| IXTQ76N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 415.13 грн |
| IXYH75N120B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
товар відсутній
| CPC2025N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
на замовлення 216 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 208.74 грн |
| 10+ | 93.65 грн |
| 26+ | 88.57 грн |
| CPC2025NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 30Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
товар відсутній
| MCC56-14io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.62V
Load current: 60A
Semiconductor structure: double series
Gate current: 100/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1906.01 грн |
| 2+ | 1673.32 грн |
| 3+ | 1672.59 грн |
| PAA132 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| PAA132S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| PAA132STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| MDMA660U1600PTEH |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Case: E3-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 660A
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Version: module
Case: E3-Pack
Mechanical mounting: screw
товар відсутній
| MDMA900U1600PTEH |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 900A; Ifsm: 8kA; module
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: E3-Pack
Version: module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 900A
Max. forward impulse current: 8kA
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 900A; Ifsm: 8kA; module
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: E3-Pack
Version: module
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 900A
Max. forward impulse current: 8kA
товар відсутній
| MDNA660U2200PTEH |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Max. off-state voltage: 2.2kV
Load current: 660A
Case: E3-Pack
Version: module
Max. forward voltage: 1.28V
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 2.2kV; If: 660A; Ifsm: 5kA
Max. off-state voltage: 2.2kV
Load current: 660A
Case: E3-Pack
Version: module
Max. forward voltage: 1.28V
Max. forward impulse current: 5kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of bridge rectifier: three-phase
товар відсутній
| CPC5712U |
|
Виробник: IXYS
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Supply voltage: 3...5.5V
Mounting: SMD
Operating temperature: -40...85°C
Category: Drivers - integrated circuits
Description: IC: driver; SOP16; -500÷500uA; 3÷5.5V
Type of integrated circuit: driver
Case: SOP16
Output current: -500...500µA
Supply voltage: 3...5.5V
Mounting: SMD
Operating temperature: -40...85°C
товар відсутній
| IXFA270N06T3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
товар відсутній
| IXFP270N06T3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 47ns
товар відсутній