Фото | Назва | Виробник | Інформація |
Доступність |
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IXXH80N65B4D1 | IXYS |
![]() Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 125ns Turn-off time: 222ns |
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IXXH80N65B4H1 | IXYS |
![]() Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 123ns Turn-off time: 147ns |
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IXFB52N90P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™ Type of transistor: N-MOSFET Power dissipation: 1.25kW Polarisation: unipolar Kind of package: tube Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: PLUS264™ Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 52A On-state resistance: 0.16Ω |
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IXFK32N90P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264 Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Gate charge: 215nC Kind of channel: enhanced Mounting: THT Case: TO264 Drain-source voltage: 900V Drain current: 32A On-state resistance: 0.3Ω |
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IXFN52N90P | IXYS |
![]() Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A Power dissipation: 890W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 308nC Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±40V Pulsed drain current: 104A Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 43A On-state resistance: 0.16Ω |
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IXFX32N90P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar Kind of package: tube Gate charge: 215nC Kind of channel: enhanced Mounting: THT Case: PLUS247™ Drain-source voltage: 900V Drain current: 32A On-state resistance: 0.3Ω |
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IXGR32N90B2D1 | IXYS |
![]() Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™ Type of transistor: IGBT Technology: HiPerFAST™; PT Collector-emitter voltage: 900V Collector current: 22A Power dissipation: 160W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 89nC Kind of package: tube Turn-on time: 42ns Turn-off time: 690ns |
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IX4427MTR | IXYS |
![]() Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2 Case: DFN8 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...30V Output current: -1.5...1.5A Kind of output: non-inverting Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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CPC1230N | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Max. operating current: 120mA Control current max.: 50mA Manufacturer series: OptoMOS Contacts configuration: SPST-NO Body dimensions: 4.09x3.81x2.03mm On-state resistance: 30Ω Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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CPC1230NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 2ms Turn-off time: 1ms Operating temperature: -40...85°C Max. operating current: 120mA Control current max.: 50mA Manufacturer series: OptoMOS Contacts configuration: SPST-NO Body dimensions: 4.09x3.81x2.03mm On-state resistance: 30Ω Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC |
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CPC1231N | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 2ms Turn-off time: 2ms Operating temperature: -40...85°C Max. operating current: 120mA Control current max.: 50mA Manufacturer series: OptoMOS Contacts configuration: SPST-NC Body dimensions: 4.09x3.81x2.03mm On-state resistance: 30Ω Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC |
на замовлення 345 шт: термін постачання 21-30 дні (днів) |
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CPC1231NTR | IXYS |
![]() Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Mounting: SMT Kind of output: MOSFET Insulation voltage: 1.5kV Case: SOP4 Turn-on time: 2ms Turn-off time: 2ms Operating temperature: -40...85°C Max. operating current: 120mA Control current max.: 50mA Manufacturer series: OptoMOS Contacts configuration: SPST-NC Body dimensions: 4.09x3.81x2.03mm On-state resistance: 30Ω Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC |
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IXFH22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
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IXTH22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO247-3 On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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IXTQ22N50P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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IXFT320N10T2 | IXYS |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 320A Power dissipation: 1kW Case: TO268 On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 430nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 98ns |
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DSEI60-12A | IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W Mounting: THT Power dissipation: 189W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: TO247-2 Max. off-state voltage: 1.2kV Max. forward voltage: 2V Load current: 52A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 0.5kA |
на замовлення 62 шт: термін постачання 21-30 дні (днів) |
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VUM24-05N | IXYS |
![]() Description: Module; diode/transistor; 500V; 24A; V1-B-Pack; Ugs: ±20V; Idm: 95A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 500V Drain current: 24A Case: V1-B-Pack Topology: buck chopper; single-phase diode bridge Electrical mounting: FASTON connectors Polarisation: unipolar On-state resistance: 0.12Ω Pulsed drain current: 95A Power dissipation: 170W Gate charge: 0.35µC Gate-source voltage: ±20V Mechanical mounting: screw |
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LCA710 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.5Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 0.25ms Kind of output: MOSFET |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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LCA710R | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.5Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 0.25ms Kind of output: MOSFET |
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LCA710RTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.5Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 0.25ms Kind of output: MOSFET |
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LCA710S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.5Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 0.25ms Kind of output: MOSFET |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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LCA710STR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 0.5Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 0.25ms Kind of output: MOSFET |
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LCA715 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC Mounting: THT Operating temperature: -40...85°C Max. operating current: 2.2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Turn-off time: 0.25ms Case: DIP6 Control current max.: 50mA Manufacturer series: OptoMOS On-state resistance: 0.15Ω Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Turn-on time: 2.5ms |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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LCA715S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC Mounting: SMT Operating temperature: -40...85°C Max. operating current: 2.2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Turn-off time: 0.25ms Case: DIP6 Control current max.: 50mA Manufacturer series: OptoMOS On-state resistance: 0.15Ω Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Turn-on time: 2.5ms |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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LCA715STR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC Mounting: SMT Operating temperature: -40...85°C Max. operating current: 2.2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Turn-off time: 0.25ms Case: DIP6 Control current max.: 50mA Manufacturer series: OptoMOS On-state resistance: 0.15Ω Body dimensions: 8.38x6.35x3.3mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO Turn-on time: 2.5ms |
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IXTP120N04T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 200W Case: TO220AB On-state resistance: 6.1mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 35ns |
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IXTP120N075T2 | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 250W Case: TO220AB On-state resistance: 7.7mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 50ns |
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IXTP120P065T | IXYS |
![]() Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -65V Drain current: -120A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 10mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 53ns |
на замовлення 338 шт: термін постачання 21-30 дні (днів) |
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MG12100S-BN2MM | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: package S Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT half-bridge |
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MG12150S-BN2MM | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 150A Case: Y4-M5 Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw |
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MG12150W-XN2MM | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: package W Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT three-phase bridge; NTC thermistor |
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MG12200D-BN2MM | IXYS |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: Y3-DCB Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
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IXBT24N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Turn-off time: 1285ns Turn-on time: 190ns Pulsed collector current: 230A Power dissipation: 250W Collector current: 24A Features of semiconductor devices: high voltage Gate charge: 0.14µC Gate-emitter voltage: ±20V Type of transistor: IGBT Collector-emitter voltage: 1.7kV |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IXFH140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO247-3 On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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IXFT140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXTQ140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO3P Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
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IXTT140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 120ns |
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CPC3714CTR | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89 Mounting: SMD Drain-source voltage: 350V Drain current: 0.24A On-state resistance: 14Ω Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depleted Gate-source voltage: ±15V Case: SOT89 |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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IXBH6N170 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3 Mounting: THT Power dissipation: 75W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 17nC Technology: BiMOSFET™ Case: TO247-3 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 6A Pulsed collector current: 36A Turn-on time: 104ns Turn-off time: 700ns Type of transistor: IGBT |
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MEK250-12DA | IXYS |
![]() Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 1.2kV Max. forward voltage: 1.54V Load current: 260A Semiconductor structure: common cathode Max. forward impulse current: 2.4kA Case: Y4-M6 Type of module: diode |
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LCA110 | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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LCA110L | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
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LCA110LS | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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LCA110LSTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
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LCA110S | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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LCA110STR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
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IXTA4N80P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO263 Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Gate charge: 14.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 560ns |
товар відсутній |
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IXTP4N80P | IXYS |
![]() Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 14.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 560ns |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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IXGH4N250C | IXYS |
![]() Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage Mounting: THT Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 57nC Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 8A Turn-off time: 350ns Type of transistor: IGBT |
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IXBK64N250 | IXYS |
![]() Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264 Mounting: THT Power dissipation: 735W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 400nC Technology: BiMOSFET™; FRED Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±25V Collector current: 64A Pulsed collector current: 600A Turn-on time: 632ns Turn-off time: 397ns Type of transistor: IGBT |
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IXFA44N25X3 | IXYS |
![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W Mounting: SMD Power dissipation: 240W Polarisation: unipolar Kind of package: tube Gate charge: 33nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Case: TO263 Reverse recovery time: 87ns Drain-source voltage: 250V Drain current: 44A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
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IXTN17N120L | IXYS |
![]() Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A Technology: Linear™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 34A Power dissipation: 540W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.9Ω Gate charge: 155nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 1.83µs Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXBOD2-04 | IXYS |
![]() Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 400V |
товар відсутній |
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CPC1020N | IXYS |
![]() Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω Mounting: SMT Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Type of relay: solid state Relay variant: current source Switched voltage: max. 30V AC; max. 30V DC Control current max.: 50mA Case: SOP4 On-state resistance: 0.25Ω Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO Max. operating current: 1.2A |
на замовлення 485 шт: термін постачання 21-30 дні (днів) |
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CPC1020NTR | IXYS |
![]() Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Mounting: SMT Body dimensions: 4.09x3.81x2.03mm Operating temperature: -40...85°C Manufacturer series: OptoMOS Type of relay: solid state Relay variant: current source Switched voltage: max. 30V AC; max. 30V DC Control current max.: 50mA Case: SOP4 On-state resistance: 0.25Ω Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Insulation voltage: 1.5kV Contacts configuration: SPST-NO Max. operating current: 1.2A |
товар відсутній |
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CLA50E1200HB | IXYS |
![]() Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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CLA50E1200TC-TUB | IXYS |
![]() Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 555A |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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CLA50E1200TC-TRL | IXYS |
![]() Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 555A |
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MDD26-12N1B | IXYS |
![]() Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V Type of module: diode Max. off-state voltage: 1.2kV Max. load current: 60A Max. forward voltage: 1.05V Load current: 36A Semiconductor structure: double series Max. forward impulse current: 555A Electrical mounting: screw Mechanical mounting: screw Case: TO240AA |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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IXXH80N65B4D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 222ns
товар відсутній
IXXH80N65B4H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 147ns
товар відсутній
IXFB52N90P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: THT
Case: PLUS264™
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 52A
On-state resistance: 0.16Ω
товар відсутній
IXFK32N90P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: TO264
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
товар відсутній
IXFN52N90P |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Power dissipation: 890W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 308nC
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 104A
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 900V
Drain current: 43A
On-state resistance: 0.16Ω
товар відсутній
IXFX32N90P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Kind of package: tube
Gate charge: 215nC
Kind of channel: enhanced
Mounting: THT
Case: PLUS247™
Drain-source voltage: 900V
Drain current: 32A
On-state resistance: 0.3Ω
товар відсутній
IXGR32N90B2D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Type of transistor: IGBT
Technology: HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 22A
Power dissipation: 160W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 42ns
Turn-off time: 690ns
товар відсутній
IX4427MTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Kind of output: non-inverting
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Kind of output: non-inverting
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
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5+ | 81.31 грн |
7+ | 54.3 грн |
21+ | 42.54 грн |
56+ | 40.22 грн |
500+ | 39.85 грн |
CPC1230N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 33 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 180.59 грн |
11+ | 77.68 грн |
30+ | 73.32 грн |
CPC1230NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
товар відсутній
CPC1231N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NC
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NC
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 345 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 189.98 грн |
10+ | 84.21 грн |
28+ | 79.85 грн |
CPC1231NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NC
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Max. operating current: 120mA
Control current max.: 50mA
Manufacturer series: OptoMOS
Contacts configuration: SPST-NC
Body dimensions: 4.09x3.81x2.03mm
On-state resistance: 30Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
товар відсутній
IXFH22N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXTH22N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
IXTQ22N50P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 190 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 390.9 грн |
4+ | 231.58 грн |
11+ | 219.24 грн |
IXFT320N10T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
товар відсутній
DSEI60-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Mounting: THT
Power dissipation: 189W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 52A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.5kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 52A; tube; Ifsm: 500A; TO247-2; 189W
Mounting: THT
Power dissipation: 189W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2V
Load current: 52A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 0.5kA
на замовлення 62 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 480.02 грн |
3+ | 347.73 грн |
7+ | 328.86 грн |
VUM24-05N |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 24A; V1-B-Pack; Ugs: ±20V; Idm: 95A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 24A
Case: V1-B-Pack
Topology: buck chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Pulsed drain current: 95A
Power dissipation: 170W
Gate charge: 0.35µC
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 24A; V1-B-Pack; Ugs: ±20V; Idm: 95A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Drain current: 24A
Case: V1-B-Pack
Topology: buck chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Pulsed drain current: 95A
Power dissipation: 170W
Gate charge: 0.35µC
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
LCA710 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
на замовлення 153 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 523.8 грн |
4+ | 227.95 грн |
11+ | 215.61 грн |
LCA710R |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
товар відсутній
LCA710RTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
товар відсутній
LCA710S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
на замовлення 164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 523.8 грн |
4+ | 227.95 грн |
11+ | 215.61 грн |
LCA710STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
товар відсутній
LCA715 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: THT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 598.85 грн |
LCA715S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
на замовлення 158 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 619.18 грн |
4+ | 266.42 грн |
9+ | 251.91 грн |
LCA715STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2200mA; max.60VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 2.2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Turn-off time: 0.25ms
Case: DIP6
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 0.15Ω
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Turn-on time: 2.5ms
товар відсутній
IXTP120N04T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
товар відсутній
IXTP120N075T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 7.7mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 7.7mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
товар відсутній
IXTP120P065T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
на замовлення 338 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 382.3 грн |
3+ | 319.42 грн |
4+ | 258.44 грн |
10+ | 244.65 грн |
MG12100S-BN2MM |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: package S
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT half-bridge
товар відсутній
MG12150S-BN2MM |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
MG12150W-XN2MM |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: package W
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній
MG12200D-BN2MM |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
IXBT24N170 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Turn-off time: 1285ns
Turn-on time: 190ns
Pulsed collector current: 230A
Power dissipation: 250W
Collector current: 24A
Features of semiconductor devices: high voltage
Gate charge: 0.14µC
Gate-emitter voltage: ±20V
Type of transistor: IGBT
Collector-emitter voltage: 1.7kV
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1699.62 грн |
2+ | 1492.56 грн |
10+ | 1475.86 грн |
IXFH140N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 603.54 грн |
3+ | 401.45 грн |
6+ | 379.67 грн |
IXFT140N10P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 610.58 грн |
2+ | 451.54 грн |
6+ | 426.86 грн |
IXTQ140N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
IXTT140N10P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
CPC3714CTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Mounting: SMD
Drain-source voltage: 350V
Drain current: 0.24A
On-state resistance: 14Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depleted
Gate-source voltage: ±15V
Case: SOT89
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.24A; 1.4W; SOT89
Mounting: SMD
Drain-source voltage: 350V
Drain current: 0.24A
On-state resistance: 14Ω
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: depleted
Gate-source voltage: ±15V
Case: SOT89
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 68.8 грн |
9+ | 41.38 грн |
25+ | 37.02 грн |
29+ | 30.05 грн |
78+ | 28.46 грн |
IXBH6N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Power dissipation: 75W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 17nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 6A
Pulsed collector current: 36A
Turn-on time: 104ns
Turn-off time: 700ns
Type of transistor: IGBT
товар відсутній
MEK250-12DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Case: Y4-M6
Type of module: diode
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
Semiconductor structure: common cathode
Max. forward impulse current: 2.4kA
Case: Y4-M6
Type of module: diode
товар відсутній
LCA110 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 151.67 грн |
9+ | 98 грн |
24+ | 92.92 грн |
LCA110L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110LS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 225.16 грн |
9+ | 100.18 грн |
24+ | 94.37 грн |
LCA110LSTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
LCA110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
на замовлення 209 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 218.12 грн |
9+ | 94.37 грн |
25+ | 89.29 грн |
LCA110STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
IXTA4N80P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
товар відсутній
IXTP4N80P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 139.94 грн |
4+ | 115.43 грн |
10+ | 92.92 грн |
26+ | 87.84 грн |
IXGH4N250C |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
IXBK64N250 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
товар відсутній
IXFA44N25X3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTN17N120L |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXBOD2-04 |
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Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
товар відсутній
CPC1020N |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 30V AC; max. 30V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.25Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 30V AC; max. 30V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.25Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 1.2A
на замовлення 485 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 333.83 грн |
6+ | 144.46 грн |
16+ | 136.48 грн |
CPC1020NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 30V AC; max. 30V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.25Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 1.2A
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Relay variant: current source
Switched voltage: max. 30V AC; max. 30V DC
Control current max.: 50mA
Case: SOP4
On-state resistance: 0.25Ω
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Insulation voltage: 1.5kV
Contacts configuration: SPST-NO
Max. operating current: 1.2A
товар відсутній
CLA50E1200HB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
на замовлення 190 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 351.03 грн |
3+ | 288.2 грн |
4+ | 260.62 грн |
9+ | 246.82 грн |
30+ | 241.74 грн |
CLA50E1200TC-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 575.4 грн |
3+ | 384.75 грн |
7+ | 363.7 грн |
CLA50E1200TC-TRL |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
товар відсутній
MDD26-12N1B |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of module: diode
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of module: diode
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
на замовлення 59 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1369.7 грн |
2+ | 1202.9 грн |
36+ | 1165.88 грн |