| Фото | Назва | Виробник | Інформація |
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DSI45-16AR | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™ Kind of package: tube Type of diode: rectifying Mounting: THT Case: ISOPLUS247™ Max. off-state voltage: 1.6kV Max. forward voltage: 1.23V Load current: 45A Semiconductor structure: single diode Max. forward impulse current: 410A Power dissipation: 165W |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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DMA100A1600NB | IXYS |
Category: Diode modules Description: Module: diode; common anode; 1.6kV; If: 50Ax2; SOT227UI; Ifsm: 725A Type of module: diode Semiconductor structure: common anode Max. off-state voltage: 1.6kV Load current: 50A x2 Case: SOT227UI Max. forward voltage: 1.13V Max. forward impulse current: 725A Electrical mounting: screw Mechanical mounting: screw |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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CLA80E1200HF | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 126A Load current: 80A Gate current: 38mA Case: PLUS247™ Mounting: THT Kind of package: tube Max. forward impulse current: 765A |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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DSSK50-0025B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; 90W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 25V Load current: 25A x2 Power dissipation: 90W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 330A Max. forward voltage: 0.42V |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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DSSK50-015A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 135W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 25A x2 Power dissipation: 135W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.45kA Max. forward voltage: 0.68V |
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| CPC1580P | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Mounting: SMD Number of channels: 1 Case: Flatpack 8pin Kind of package: tube Operating temperature: -40...110°C Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver |
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| CPC1580PTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Mounting: SMD Number of channels: 1 Case: Flatpack 8pin Kind of package: reel; tape Operating temperature: -40...110°C Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver |
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| CPC1590P | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Mounting: SMD Number of channels: 1 Case: Flatpack 8pin Kind of package: tube Operating temperature: -40...110°C Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver |
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| CPC1590PTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1 Mounting: SMD Number of channels: 1 Case: Flatpack 8pin Kind of package: reel; tape Operating temperature: -40...110°C Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver |
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FDA217 | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Number of channels: 2 Mounting: THT Operating temperature: -40...85°C Kind of package: tube |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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FDA217S | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Kind of package: tube |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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FDA217STR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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IXFH12N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.85Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced |
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LAA100P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Case: DIP8 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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LAA100PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Case: DIP8 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV |
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| LAA100PLTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Case: DIP8 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV |
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| LAA100PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT Case: DIP8 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 120mA Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV |
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DSEP2X101-04A | IXYS |
Category: Diode modules Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw Electrical mounting: screw Mechanical mounting: screw Load current: 100A x2 Max. forward voltage: 1.73V Max. off-state voltage: 0.4kV Type of module: diode Case: SOT227B Max. forward impulse current: 1kA Semiconductor structure: double independent |
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FUO22-16N | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 30A Max. forward impulse current: 150A Electrical mounting: THT Max. forward voltage: 1.2V Case: ISOPLUS i4-pac™ x024a |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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VBO22-16NO8 | IXYS |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A Type of bridge rectifier: single-phase Max. off-state voltage: 1.6kV Load current: 14A Max. forward impulse current: 380A Electrical mounting: THT Version: square Leads: connectors FASTON Case: FO-B Kind of package: bulk |
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| VUO122-16NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 125A Max. forward impulse current: 1kA Electrical mounting: THT Version: module Max. forward voltage: 1.13V Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw |
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CPC1968J | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ Body dimensions: 26.2x20x5mm Operating temperature: -40...85°C Mounting: THT On-state resistance: 0.35Ω Max. operating current: 5A Relay variant: Photo MOSFET Control current: 10mA Control voltage: 0.9...1.56V DC Operate time: 4.6ms Release time: 0.07ms Switched voltage: max. 500V DC Control current max.: 100mA Type of relay: solid state |
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IXTP96P085T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -85V Drain current: -96A Power dissipation: 298W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 13mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 55ns |
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IXFN520N075T2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA Case: SOT227B On-state resistance: 1.9mΩ Technology: GigaMOS™; HiPerFET™; TrenchT2™ Power dissipation: 940W Polarisation: unipolar Drain-source voltage: 75V Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Gate charge: 545nC Reverse recovery time: 150ns Semiconductor structure: single transistor Kind of channel: enhanced Gate-source voltage: ±30V Drain current: 480A Pulsed drain current: 1.5kA |
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IXGR24N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 79nC Kind of package: tube Turn-on time: 54ns Turn-off time: 430ns |
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IXGR55N120A3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 330A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns |
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IXGR6N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™ Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 2.5A Power dissipation: 50W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 18.5nC Kind of package: tube Turn-on time: 91ns Turn-off time: 271ns Features of semiconductor devices: high voltage |
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IXTX90N25L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns Kind of package: tube Case: PLUS247™ Features of semiconductor devices: linear power mosfet Gate charge: 640nC Kind of channel: enhanced Reverse recovery time: 266ns Mounting: THT Drain-source voltage: 250V Drain current: 90A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 960W Polarisation: unipolar |
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IXTX90P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns Kind of package: tube Case: PLUS247™ Gate charge: 205nC Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 315ns Mounting: THT Drain-source voltage: -200V Drain current: -90A On-state resistance: 44mΩ Type of transistor: P-MOSFET Power dissipation: 890W Polarisation: unipolar |
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LAA120P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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LAA120PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Case: DIP8 On-state resistance: 20Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C Contacts configuration: SPST-NO x2 Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Body dimensions: 9.66x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LAA120PLTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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| LAA120PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Body dimensions: 9.66x6.35x2.16mm Operating temperature: -40...85°C Manufacturer series: OptoMOS On-state resistance: 20Ω Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Insulation voltage: 3.75kV Case: DIP8 Contacts configuration: SPST-NO x2 Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Mounting: SMT Control current max.: 50mA |
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CS45-08io1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Mounting: THT Case: TO247AD Kind of package: tube Max. off-state voltage: 0.8kV Max. load current: 71A Type of thyristor: thyristor Load current: 45A Gate current: 80mA Max. forward impulse current: 520A |
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CS45-12IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Max. off-state voltage: 1.2kV Max. load current: 71A Load current: 45A Gate current: 80mA Max. forward impulse current: 520A Kind of package: tube Type of thyristor: thyristor Mounting: THT Case: TO247AD |
на замовлення 268 шт: термін постачання 21-30 дні (днів) |
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CS45-16IO1 | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Kind of package: tube Type of thyristor: thyristor Mounting: THT Case: TO247AD Max. off-state voltage: 1.6kV Max. load current: 71A Load current: 45A Gate current: 80mA Max. forward impulse current: 520A |
на замовлення 323 шт: термін постачання 21-30 дні (днів) |
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CS45-16IO1R | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube Kind of package: tube Type of thyristor: thyristor Mounting: THT Case: TO247AD Max. off-state voltage: 1.6kV Max. load current: 71A Load current: 45A Gate current: 80mA Max. forward impulse current: 520A |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| MCNA40PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 63A Max. forward voltage: 1.29V Load current: 40A Semiconductor structure: double series Max. forward impulse current: 0.5kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCD95-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk Max. off-state voltage: 1.6kV Max. load current: 182A Load current: 116A Case: TO240AA Kind of package: bulk Max. forward impulse current: 2.25kA Semiconductor structure: double series Mechanical mounting: screw Features of semiconductor devices: Kelvin terminal Electrical mounting: FASTON connectors; screw Type of module: diode-thyristor Max. forward voltage: 1.28V |
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| MCNA120PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 190A Max. forward voltage: 1.34V Load current: 120A Semiconductor structure: double series Max. forward impulse current: 2.2kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCNA55PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 86A Max. forward voltage: 1.2V Load current: 55A Semiconductor structure: double series Max. forward impulse current: 1kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCNA75PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 118A Max. forward voltage: 1.21V Load current: 75A Semiconductor structure: double series Max. forward impulse current: 1.4kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MCNA95PD2200TB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: TO240AA Max. off-state voltage: 2.2kV Max. load current: 149A Max. forward voltage: 1.24V Load current: 95A Semiconductor structure: double series Max. forward impulse current: 1.7kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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MCD26-08IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk Max. off-state voltage: 0.8kV Load current: 27A Max. forward impulse current: 520A Case: TO240AA Electrical mounting: FASTON connectors; screw Kind of package: bulk Max. forward voltage: 1.27V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.85V Max. load current: 42A Semiconductor structure: double series Gate current: 100/200mA |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| MCD162-16io1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Max. load current: 300A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD310-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 500A Threshold on-voltage: 0.8V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-08IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk Max. off-state voltage: 0.8kV Load current: 60A Max. forward impulse current: 1.5kA Case: TO240AA Electrical mounting: FASTON connectors; screw Kind of package: bulk Max. forward voltage: 1.24V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.85V Max. load current: 100A Semiconductor structure: double series Gate current: 100/200mA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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MCD95-08io1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 116A; TO240AA; Ufmax: 1.28V; screw Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 800V Load current: 116A Case: TO240AA Max. forward voltage: 1.28V Max. forward impulse current: 2.25kA Gate current: 150/200mA Electrical mounting: screw Max. load current: 180A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товар відсутній |
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| MCNA180PD2200YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: Y4-M6 Max. off-state voltage: 2.2kV Max. load current: 280A Max. forward voltage: 1.18V Load current: 180A Semiconductor structure: double series Max. forward impulse current: 5.4kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
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| MCNA220PD2200YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: Y4-M6 Max. off-state voltage: 2.2kV Max. load current: 345A Max. forward voltage: 1.19V Load current: 220A Semiconductor structure: double series Max. forward impulse current: 7.2kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |
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MCD26-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk Max. off-state voltage: 1.2kV Load current: 27A Max. forward impulse current: 440A Case: TO240AA Electrical mounting: FASTON connectors; screw Kind of package: bulk Max. forward voltage: 1.27V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.85V Max. load current: 42A Semiconductor structure: double series Gate current: 100/200mA |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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MCD26-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.4kV Max. load current: 42A Max. forward voltage: 1.27V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 520A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.85V |
товар відсутній |
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MCD26-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk Case: TO240AA Kind of package: bulk Max. off-state voltage: 1.6kV Max. load current: 42A Max. forward voltage: 1.27V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 520A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.85V |
товар відсутній |
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DPF240X400NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw Max. off-state voltage: 0.4kV Max. forward voltage: 1.06V Load current: 120A x2 Semiconductor structure: double independent Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: SOT227B |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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IXTP150N15X4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns Case: TO220AB Mounting: THT Features of semiconductor devices: ultra junction x-class Kind of package: tube Reverse recovery time: 100ns Power dissipation: 480W On-state resistance: 7.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 105nC Kind of channel: enhanced Drain-source voltage: 150V Drain current: 150A |
на замовлення 157 шт: термін постачання 21-30 дні (днів) |
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IXTP150N15X4A | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A Type of transistor: N-MOSFET Technology: X4-Class Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Pulsed drain current: 260A Power dissipation: 480W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Application: automotive industry Reverse recovery time: 93ns |
товар відсутній |
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IXTQ150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 714W Polarisation: unipolar Kind of package: tube Gate charge: 0.19µC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO3P Reverse recovery time: 150ns Drain-source voltage: 150V Drain current: 150A |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXTA3N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 38.6nC Kind of channel: enhanced Mounting: SMD Case: TO263 Reverse recovery time: 900ns Drain-source voltage: 1.5kV Drain current: 3A |
на замовлення 72 шт: термін постачання 21-30 дні (днів) |
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IXTA4N150HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns Drain-source voltage: 1.5kV Drain current: 4A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 44.5nC Kind of channel: enhanced Mounting: SMD Case: TO263 Reverse recovery time: 900ns |
товар відсутній |
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IXTH3N150 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 38.6nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
товар відсутній |
| DSI45-16AR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 165W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Case: ISOPLUS247™
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 410A
Power dissipation: 165W
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 466.38 грн |
| 3+ | 309.23 грн |
| 8+ | 292.57 грн |
| DMA100A1600NB |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.6kV; If: 50Ax2; SOT227UI; Ifsm: 725A
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.6kV
Load current: 50A x2
Case: SOT227UI
Max. forward voltage: 1.13V
Max. forward impulse current: 725A
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common anode; 1.6kV; If: 50Ax2; SOT227UI; Ifsm: 725A
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.6kV
Load current: 50A x2
Case: SOT227UI
Max. forward voltage: 1.13V
Max. forward impulse current: 725A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1395.23 грн |
| 2+ | 1224.6 грн |
| CLA80E1200HF |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 268 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 559.96 грн |
| 2+ | 435.24 грн |
| 6+ | 411.34 грн |
| 30+ | 406.27 грн |
| 120+ | 395.4 грн |
| DSSK50-0025B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; 90W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Power dissipation: 90W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 330A
Max. forward voltage: 0.42V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25Ax2; 90W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A x2
Power dissipation: 90W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 330A
Max. forward voltage: 0.42V
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.16 грн |
| 3+ | 221.6 грн |
| 5+ | 168.01 грн |
| 14+ | 158.6 грн |
| DSSK50-015A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 135W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Max. forward voltage: 0.68V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 25A x2
Power dissipation: 135W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Max. forward voltage: 0.68V
товар відсутній
| CPC1580P |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Kind of package: tube
Operating temperature: -40...110°C
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Kind of package: tube
Operating temperature: -40...110°C
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
товар відсутній
| CPC1580PTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Kind of package: reel; tape
Operating temperature: -40...110°C
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Kind of package: reel; tape
Operating temperature: -40...110°C
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
товар відсутній
| CPC1590P |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Kind of package: tube
Operating temperature: -40...110°C
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Kind of package: tube
Operating temperature: -40...110°C
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
товар відсутній
| CPC1590PTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Kind of package: reel; tape
Operating temperature: -40...110°C
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Mounting: SMD
Number of channels: 1
Case: Flatpack 8pin
Kind of package: reel; tape
Operating temperature: -40...110°C
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
товар відсутній
| FDA217 |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.38 грн |
| 3+ | 220.88 грн |
| 5+ | 169.46 грн |
| 14+ | 160.04 грн |
| FDA217S |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.38 грн |
| 3+ | 220.88 грн |
| 5+ | 169.46 грн |
| 14+ | 160.04 грн |
| FDA217STR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товар відсутній
| IXFH12N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| LAA100P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 506.93 грн |
| 4+ | 226.67 грн |
| 11+ | 213.63 грн |
| LAA100PL |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
товар відсутній
| LAA100PLTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
товар відсутній
| LAA100PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; 25Ω; SMT
Case: DIP8
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 120mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
товар відсутній
| DSEP2X101-04A |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Load current: 100A x2
Max. forward voltage: 1.73V
Max. off-state voltage: 0.4kV
Type of module: diode
Case: SOT227B
Max. forward impulse current: 1kA
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Mechanical mounting: screw
Load current: 100A x2
Max. forward voltage: 1.73V
Max. off-state voltage: 0.4kV
Type of module: diode
Case: SOT227B
Max. forward impulse current: 1kA
Semiconductor structure: double independent
товар відсутній
| FUO22-16N |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 30A; Ifsm: 150A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 30A
Max. forward impulse current: 150A
Electrical mounting: THT
Max. forward voltage: 1.2V
Case: ISOPLUS i4-pac™ x024a
на замовлення 152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1101.99 грн |
| 3+ | 967.51 грн |
| VBO22-16NO8 |
|
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Electrical mounting: THT
Version: square
Leads: connectors FASTON
Case: FO-B
Kind of package: bulk
товар відсутній
| VUO122-16NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 125A; Ifsm: 1kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 125A
Max. forward impulse current: 1kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.13V
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
товар відсутній
| CPC1968J |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Body dimensions: 26.2x20x5mm
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 0.35Ω
Max. operating current: 5A
Relay variant: Photo MOSFET
Control current: 10mA
Control voltage: 0.9...1.56V DC
Operate time: 4.6ms
Release time: 0.07ms
Switched voltage: max. 500V DC
Control current max.: 100mA
Type of relay: solid state
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Body dimensions: 26.2x20x5mm
Operating temperature: -40...85°C
Mounting: THT
On-state resistance: 0.35Ω
Max. operating current: 5A
Relay variant: Photo MOSFET
Control current: 10mA
Control voltage: 0.9...1.56V DC
Operate time: 4.6ms
Release time: 0.07ms
Switched voltage: max. 500V DC
Control current max.: 100mA
Type of relay: solid state
товар відсутній
| IXTP96P085T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
товар відсутній
| IXFN520N075T2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 940W
Polarisation: unipolar
Drain-source voltage: 75V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 545nC
Reverse recovery time: 150ns
Semiconductor structure: single transistor
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain current: 480A
Pulsed drain current: 1.5kA
Category: Transistor modules MOSFET
Description: Module; single transistor; 75V; 480A; SOT227B; screw; Idm: 1.5kA
Case: SOT227B
On-state resistance: 1.9mΩ
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Power dissipation: 940W
Polarisation: unipolar
Drain-source voltage: 75V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 545nC
Reverse recovery time: 150ns
Semiconductor structure: single transistor
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain current: 480A
Pulsed drain current: 1.5kA
товар відсутній
| IXGR24N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 430ns
товар відсутній
| IXGR55N120A3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 330A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 1253ns
товар відсутній
| IXGR6N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 2.5A; 50W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 2.5A
Power dissipation: 50W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
товар відсутній
| IXTX90N25L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Kind of package: tube
Case: PLUS247™
Features of semiconductor devices: linear power mosfet
Gate charge: 640nC
Kind of channel: enhanced
Reverse recovery time: 266ns
Mounting: THT
Drain-source voltage: 250V
Drain current: 90A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Kind of package: tube
Case: PLUS247™
Features of semiconductor devices: linear power mosfet
Gate charge: 640nC
Kind of channel: enhanced
Reverse recovery time: 266ns
Mounting: THT
Drain-source voltage: 250V
Drain current: 90A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 960W
Polarisation: unipolar
товар відсутній
| IXTX90P20P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Kind of package: tube
Case: PLUS247™
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 315ns
Mounting: THT
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Kind of package: tube
Case: PLUS247™
Gate charge: 205nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 315ns
Mounting: THT
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 44mΩ
Type of transistor: P-MOSFET
Power dissipation: 890W
Polarisation: unipolar
товар відсутній
| LAA120P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LAA120PL |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Case: DIP8
On-state resistance: 20Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Case: DIP8
On-state resistance: 20Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 506.93 грн |
| 4+ | 223.77 грн |
| 11+ | 211.46 грн |
| LAA120PLTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LAA120PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Insulation voltage: 3.75kV
Case: DIP8
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Mounting: SMT
Control current max.: 50mA
товар відсутній
| CS45-08io1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Case: TO247AD
Kind of package: tube
Max. off-state voltage: 0.8kV
Max. load current: 71A
Type of thyristor: thyristor
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
товар відсутній
| CS45-12IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.2kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
на замовлення 268 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 404.76 грн |
| 4+ | 264.33 грн |
| 9+ | 249.84 грн |
| CS45-16IO1 | |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1600V; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
на замовлення 323 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 432.84 грн |
| 3+ | 286.78 грн |
| 9+ | 270.85 грн |
| 120+ | 267.95 грн |
| CS45-16IO1R |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 71A; 45A; Igt: 80mA; TO247AD; THT; tube
Kind of package: tube
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
Max. off-state voltage: 1.6kV
Max. load current: 71A
Load current: 45A
Gate current: 80mA
Max. forward impulse current: 520A
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 499.91 грн |
| 3+ | 366.44 грн |
| 7+ | 346.16 грн |
| 30+ | 343.99 грн |
| MCNA40PD2200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 63A
Max. forward voltage: 1.29V
Load current: 40A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 63A
Max. forward voltage: 1.29V
Load current: 40A
Semiconductor structure: double series
Max. forward impulse current: 0.5kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCD95-16io1 |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Max. load current: 182A
Load current: 116A
Case: TO240AA
Kind of package: bulk
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Type of module: diode-thyristor
Max. forward voltage: 1.28V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Max. load current: 182A
Load current: 116A
Case: TO240AA
Kind of package: bulk
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Electrical mounting: FASTON connectors; screw
Type of module: diode-thyristor
Max. forward voltage: 1.28V
товар відсутній
| MCNA120PD2200TB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 190A
Max. forward voltage: 1.34V
Load current: 120A
Semiconductor structure: double series
Max. forward impulse current: 2.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 190A
Max. forward voltage: 1.34V
Load current: 120A
Semiconductor structure: double series
Max. forward impulse current: 2.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA55PD2200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 86A
Max. forward voltage: 1.2V
Load current: 55A
Semiconductor structure: double series
Max. forward impulse current: 1kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 86A
Max. forward voltage: 1.2V
Load current: 55A
Semiconductor structure: double series
Max. forward impulse current: 1kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA75PD2200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 118A
Max. forward voltage: 1.21V
Load current: 75A
Semiconductor structure: double series
Max. forward impulse current: 1.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 118A
Max. forward voltage: 1.21V
Load current: 75A
Semiconductor structure: double series
Max. forward impulse current: 1.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA95PD2200TB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 149A
Max. forward voltage: 1.24V
Load current: 95A
Semiconductor structure: double series
Max. forward impulse current: 1.7kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Max. off-state voltage: 2.2kV
Max. load current: 149A
Max. forward voltage: 1.24V
Load current: 95A
Semiconductor structure: double series
Max. forward impulse current: 1.7kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCD26-08IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1393.67 грн |
| 2+ | 1223.87 грн |
| MCD162-16io1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD310-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 500A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-08IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1617.49 грн |
| MCD95-08io1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 116A; TO240AA; Ufmax: 1.28V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 800V
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 180A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 116A; TO240AA; Ufmax: 1.28V; screw
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 800V
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Max. load current: 180A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCNA180PD2200YB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 280A
Max. forward voltage: 1.18V
Load current: 180A
Semiconductor structure: double series
Max. forward impulse current: 5.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 280A
Max. forward voltage: 1.18V
Load current: 180A
Semiconductor structure: double series
Max. forward impulse current: 5.4kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCNA220PD2200YB |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 345A
Max. forward voltage: 1.19V
Load current: 220A
Semiconductor structure: double series
Max. forward impulse current: 7.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 2.2kV
Max. load current: 345A
Max. forward voltage: 1.19V
Load current: 220A
Semiconductor structure: double series
Max. forward impulse current: 7.2kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MCD26-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 440A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 440A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Gate current: 100/200mA
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1460.74 грн |
| 2+ | 1282.53 грн |
| MCD26-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.4kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
товар відсутній
| MCD26-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Case: TO240AA
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. load current: 42A
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.85V
товар відсутній
| DPF240X400NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.06V
Load current: 120A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2714.8 грн |
| IXTP150N15X4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Case: TO220AB
Mounting: THT
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 100ns
Power dissipation: 480W
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 105nC
Kind of channel: enhanced
Drain-source voltage: 150V
Drain current: 150A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Case: TO220AB
Mounting: THT
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Reverse recovery time: 100ns
Power dissipation: 480W
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 105nC
Kind of channel: enhanced
Drain-source voltage: 150V
Drain current: 150A
на замовлення 157 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 496.79 грн |
| 3+ | 367.89 грн |
| 7+ | 347.61 грн |
| 50+ | 341.82 грн |
| IXTP150N15X4A |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Pulsed drain current: 260A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 93ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X4-Class; unipolar; 150V; 150A; Idm: 260A
Type of transistor: N-MOSFET
Technology: X4-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Pulsed drain current: 260A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Application: automotive industry
Reverse recovery time: 93ns
товар відсутній
| IXTQ150N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.19µC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 150A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Kind of package: tube
Gate charge: 0.19µC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 150ns
Drain-source voltage: 150V
Drain current: 150A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 629.37 грн |
| IXTA3N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
на замовлення 72 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 762.73 грн |
| 2+ | 506.21 грн |
| 3+ | 505.48 грн |
| 5+ | 477.96 грн |
| IXTA4N150HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
товар відсутній
| IXTH3N150 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
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