Технічний опис IXFQ28N60P3 Littelfuse
Description: MOSFET N-CH 600V 28A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V, Power Dissipation (Max): 695W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V.
Інші пропозиції IXFQ28N60P3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFQ28N60P3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 695W Case: TO3P On-state resistance: 0.26Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товару немає в наявності |
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IXFQ28N60P3 | Виробник : IXYS |
Description: MOSFET N-CH 600V 28A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3560 pF @ 25 V |
товару немає в наявності |
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IXFQ28N60P3 | Виробник : IXYS | MOSFETs 600V 28A 0.26Ohm PolarP3 Power MOSFET |
товару немає в наявності |
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IXFQ28N60P3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 695W Case: TO3P On-state resistance: 0.26Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
товару немає в наявності |