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IXYR100N120C3 IXYS
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Description: IGBT 1200V 104A 484W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 484 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 2142.56 грн |
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Технічний опис IXYR100N120C3 IXYS
Description: IGBT 1200V 104A 484W ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A, Supplier Device Package: ISOPLUS247™, Td (on/off) @ 25°C: 32ns/123ns, Switching Energy: 6.5mJ (on), 2.9mJ (off), Test Condition: 600V, 100A, 1Ohm, 15V, Gate Charge: 270 nC, Part Status: Active, Current - Collector (Ic) (Max): 104 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 480 A, Power - Max: 484 W.
Інші пропозиції IXYR100N120C3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXYR100N120C3 | Виробник : Littelfuse |
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товар відсутній |
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IXYR100N120C3 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 484W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 260nC Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns кількість в упаковці: 1 шт |
товар відсутній |
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IXYR100N120C3 | Виробник : IXYS |
![]() |
товар відсутній |
|
![]() |
IXYR100N120C3 | Виробник : IXYS |
![]() Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 484W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 260nC Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns |
товар відсутній |