| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFP12N65X2M | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 18.5nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 155ns |
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IXTA12N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 270ns |
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IXTH12N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 17.7nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 270ns |
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IXTP12N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO220AB On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 270ns |
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IXTP12N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 24A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 17.7nC Kind of package: tube Kind of channel: enhanced |
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IXXP12N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 12A Power dissipation: 160W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 70A Mounting: THT Gate charge: 34nC Kind of package: tube Turn-on time: 44ns Turn-off time: 245ns |
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IXFR40N90P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™ Mounting: THT Case: ISOPLUS247™ Kind of package: tube Power dissipation: 300W Polarisation: unipolar Gate charge: 230nC Kind of channel: enhanced Drain-source voltage: 900V Drain current: 21A On-state resistance: 0.25Ω Type of transistor: N-MOSFET |
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IXFA30N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO263 On-state resistance: 155mΩ Mounting: SMD Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns |
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IXFH30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO247-3 On-state resistance: 0.24Ω Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced |
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IXFH30N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO247-3 On-state resistance: 155mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns |
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IXFP30N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO220AB On-state resistance: 155mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns |
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IXFQ30N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO3P; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO3P On-state resistance: 155mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns |
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IXFR30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 166W Case: ISOPLUS247™ On-state resistance: 0.25Ω Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhanced |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IXFT30N60P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 500W Case: TO268 On-state resistance: 0.24Ω Mounting: SMD Gate charge: 82nC Kind of package: tube Kind of channel: enhanced |
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IXGA30N60C3C1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 220W Case: TO263-2 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 38nC Kind of package: tube Turn-on time: 37ns Turn-off time: 160ns |
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IXKH30N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 310W Case: TO247-3 On-state resistance: 0.125Ω Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
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IXTH30N60L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO247-3 On-state resistance: 0.24Ω Mounting: THT Gate charge: 335nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 710ns |
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| MD18200S-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S Case: package S Max. forward impulse current: 6.5kA Load current: 200A Max. forward voltage: 1.5V Max. load current: 310A Max. off-state voltage: 1.8kV Electrical mounting: screw Mechanical mounting: screw Type of module: diode Semiconductor structure: common cathode; double |
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| MCMA260PD1800YB | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Case: Y4-M6 Max. off-state voltage: 1.8kV Max. load current: 408A Max. forward voltage: 1.06V Load current: 260A Semiconductor structure: double series Max. forward impulse current: 8.3kA Kind of package: bulk Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| MIXA60HU1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W Technology: Sonic FRD™; XPT™ Collector current: 60A Power dissipation: 290W Case: V1-A-Pack Gate-emitter voltage: ±20V Pulsed collector current: 150A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors Topology: boost chopper; buck chopper; H-bridge Mechanical mounting: screw Type of module: IGBT |
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MCC26-12io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V Case: TO240AA Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Max. off-state voltage: 1.2kV Max. forward voltage: 1.64V Load current: 27A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 560A |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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CS19-12HO1 | IXYS |
 Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube Mounting: THT Kind of package: tube Type of thyristor: thyristor Case: TO220AB Max. off-state voltage: 1.2kV Max. load current: 31A Load current: 20A Gate current: 28mA Max. forward impulse current: 180A |
на замовлення 403 шт: термін постачання 21-30 дні (днів) |
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CS19-12HO1S | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 31A Load current: 20A Gate current: 50mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 180A |
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CS19-12HO1S-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube Mounting: SMD Kind of package: tube Type of thyristor: thyristor Case: D2PAK Max. off-state voltage: 1.2kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Max. forward impulse current: 155A |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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IXDN614PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
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| MCMA450UH1600TEH | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA Max. forward impulse current: 2.4kA Electrical mounting: Press-in PCB Mechanical mounting: screw Version: module Type of bridge rectifier: half-controlled Case: E3-Pack Max. off-state voltage: 1.6kV Load current: 450A |
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| MDMA450UB1600PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 175A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
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IXFA18N60X | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO263 On-state resistance: 0.23Ω Mounting: SMD Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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IXFH18N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO247-3 On-state resistance: 0.4Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
на замовлення 298 шт: термін постачання 21-30 дні (днів) |
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IXFH18N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO247-3 On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXFP18N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 320W Case: TO220AB On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 127ns |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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IXTQ18N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO3P On-state resistance: 0.42Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
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| VTO39-12HO7 | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: full-controlled; Urmax: 1.2kV; If: 16A; THT Type of bridge rectifier: full-controlled Max. off-state voltage: 1.2kV Load current: 16A Max. forward impulse current: 180A Electrical mounting: THT Leads: wire Ø 0.75mm Case: ECO-PAC 1 Version: module Mechanical mounting: screw Max. forward voltage: 1.6V Gate current: 25/50mA |
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DSEP12-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 40ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO220AC Max. forward voltage: 1.87V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 322 шт: термін постачання 21-30 дні (днів) |
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DSEP12-12AZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 12A Reverse recovery time: 40ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263ABHV Max. forward voltage: 1.87V Max. forward impulse current: 90A Power dissipation: 95W Technology: HiPerFRED™ Kind of package: tube |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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IXBH10N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3 Mounting: THT Pulsed collector current: 40A Turn-on time: 63ns Turn-off time: 1.8µs Type of transistor: IGBT Power dissipation: 140W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 30nC Technology: BiMOSFET™ Case: TO247-3 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXBH10N300HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV Mounting: THT Pulsed collector current: 88A Turn-on time: 805ns Turn-off time: 2.13µs Type of transistor: IGBT Power dissipation: 180W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 46nC Technology: BiMOSFET™ Case: TO247HV Collector-emitter voltage: 3kV Gate-emitter voltage: ±20V Collector current: 10A |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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MCC21-14IO8B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 21A; TO240AA; Ufmax: 1.52V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 21A Case: TO240AA Max. forward voltage: 1.52V Max. forward impulse current: 345A Gate current: 65/80mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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IXGH72N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns |
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IXGN72N60C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W Technology: GenX3™; PT Collector current: 52A Power dissipation: 360W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXGX72N60C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns |
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MCC312-12io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 320A; Y1-CU; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 320A Case: Y1-CU Max. forward voltage: 1.32V Max. forward impulse current: 10.1kA Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCC312-14io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 320A; Y1; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 320A Case: Y1 Max. forward voltage: 1.32V Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCC312-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A Case: Y1 Max. forward voltage: 1.32V Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MCC312-18io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.8kV; 320A; Y1; Ufmax: 1.32V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 320A Case: Y1 Max. forward voltage: 1.32V Gate current: 150/220mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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IXGK72N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns |
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IXGR72N60B3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 200W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns |
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MDD95-16N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V Max. off-state voltage: 1.6kV Electrical mounting: screw Load current: 120A Max. load current: 180A Type of module: diode Semiconductor structure: double series Case: TO240AA Max. forward impulse current: 2.38kA Max. forward voltage: 1.13V Mechanical mounting: screw |
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IXTQ200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 550W Case: TO3P On-state resistance: 5.5mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IXFH34N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 34A Power dissipation: 695W Case: TO247-3 On-state resistance: 0.18Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
на замовлення 243 шт: термін постачання 21-30 дні (днів) |
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IXFH44N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.14Ω Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhanced |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXFK44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXFK64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: TO264 On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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IXFK64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: TO264 On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced |
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IXFK94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: TO264 On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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IXFN64N50P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 50A Pulsed drain current: 150A Power dissipation: 625W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 85mΩ Gate charge: 150nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFN94N50P2 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; Polar2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 68A Pulsed drain current: 240A Power dissipation: 780W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 0.22µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFQ34N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 34A Power dissipation: 695W Case: TO3P On-state resistance: 0.18Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced |
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IXFR44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.15Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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DSEI12-10A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns Max. off-state voltage: 1kV Load current: 12A Max. forward impulse current: 75A Case: TO220AC Features of semiconductor devices: fast switching Kind of package: tube Max. forward voltage: 2.7V Mounting: THT Semiconductor structure: single diode Reverse recovery time: 50ns Power dissipation: 78W Type of diode: rectifying Technology: FRED Heatsink thickness: 2.29...2.79mm |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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| IXFP12N65X2M |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 155ns
товар відсутній
| IXTA12N65X2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товар відсутній
| IXTH12N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 270ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 270ns
товар відсутній
| IXTP12N65X2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товар відсутній
| IXTP12N65X2M |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 24A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 17.7nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXXP12N65B4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 12A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 245ns
товар відсутній
| IXFR40N90P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhanced
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhanced
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
товар відсутній
| IXFA30N60X |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
| IXFH30N60P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH30N60X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
| IXFP30N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
| IXFQ30N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO3P; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO3P
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO3P; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO3P
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
товар відсутній
| IXFR30N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 166W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 166W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 874.26 грн |
| 2+ | 585.87 грн |
| 4+ | 554 грн |
| IXFT30N60P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 500W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXGA30N60C3C1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 160ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 220W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 220W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 160ns
товар відсутній
| IXKH30N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 310W
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 310W
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
| IXTH30N60L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
товар відсутній
| MD18200S-DKM2MM |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Case: package S
Max. forward impulse current: 6.5kA
Load current: 200A
Max. forward voltage: 1.5V
Max. load current: 310A
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: common cathode; double
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Case: package S
Max. forward impulse current: 6.5kA
Load current: 200A
Max. forward voltage: 1.5V
Max. load current: 310A
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: common cathode; double
товар відсутній
| MCMA260PD1800YB |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Case: Y4-M6
Max. off-state voltage: 1.8kV
Max. load current: 408A
Max. forward voltage: 1.06V
Load current: 260A
Semiconductor structure: double series
Max. forward impulse current: 8.3kA
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| MIXA60HU1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Collector current: 60A
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Topology: boost chopper; buck chopper; H-bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Collector current: 60A
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Topology: boost chopper; buck chopper; H-bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| MCC26-12io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.64V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.64V
Case: TO240AA
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.64V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 560A
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1565.24 грн |
| 2+ | 1374.5 грн |
| 36+ | 1348.43 грн |
| CS19-12HO1 | |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Case: TO220AB
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 28mA
Max. forward impulse current: 180A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Case: TO220AB
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 28mA
Max. forward impulse current: 180A
на замовлення 403 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.46 грн |
| 8+ | 113.7 грн |
| 21+ | 107.9 грн |
| 50+ | 105.01 грн |
| 250+ | 103.56 грн |
| CS19-12HO1S |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
товар відсутній
| CS19-12HO1S-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Case: D2PAK
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Case: D2PAK
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Max. forward impulse current: 155A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.01 грн |
| 7+ | 132.53 грн |
| 18+ | 125.28 грн |
| IXDN614PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.36 грн |
| 8+ | 110.08 грн |
| 22+ | 103.56 грн |
| MCMA450UH1600TEH |
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Max. forward impulse current: 2.4kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Type of bridge rectifier: half-controlled
Case: E3-Pack
Max. off-state voltage: 1.6kV
Load current: 450A
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Max. forward impulse current: 2.4kA
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Version: module
Type of bridge rectifier: half-controlled
Case: E3-Pack
Max. off-state voltage: 1.6kV
Load current: 450A
товар відсутній
| MDMA450UB1600PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
товар відсутній
| IXFA18N60X |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 74 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.56 грн |
| 3+ | 377.3 грн |
| 7+ | 357.02 грн |
| 10+ | 351.23 грн |
| 50+ | 343.99 грн |
| IXFH18N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 298 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 389.17 грн |
| 3+ | 325.16 грн |
| 4+ | 259.26 грн |
| 9+ | 244.77 грн |
| IXFH18N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO247-3; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 581.02 грн |
| 2+ | 429.44 грн |
| 6+ | 406.27 грн |
| IXFP18N60X |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO220AB; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 127ns
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 503.81 грн |
| 3+ | 372.96 грн |
| 7+ | 352.68 грн |
| IXTQ18N60P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товар відсутній
| VTO39-12HO7 |
|
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: full-controlled; Urmax: 1.2kV; If: 16A; THT
Type of bridge rectifier: full-controlled
Max. off-state voltage: 1.2kV
Load current: 16A
Max. forward impulse current: 180A
Electrical mounting: THT
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.6V
Gate current: 25/50mA
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: full-controlled; Urmax: 1.2kV; If: 16A; THT
Type of bridge rectifier: full-controlled
Max. off-state voltage: 1.2kV
Load current: 16A
Max. forward impulse current: 180A
Electrical mounting: THT
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Version: module
Mechanical mounting: screw
Max. forward voltage: 1.6V
Gate current: 25/50mA
товар відсутній
| DSEP12-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 12A; tube; Ifsm: 90A; TO220AC; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO220AC
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 322 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.25 грн |
| 8+ | 107.9 грн |
| 22+ | 102.11 грн |
| DSEP12-12AZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 12A; 40ns; TO263ABHV; Ufmax: 1.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 12A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263ABHV
Max. forward voltage: 1.87V
Max. forward impulse current: 90A
Power dissipation: 95W
Technology: HiPerFRED™
Kind of package: tube
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.65 грн |
| 3+ | 165.84 грн |
| 7+ | 132.53 грн |
| 18+ | 125.28 грн |
| IXBH10N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 30nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Pulsed collector current: 40A
Turn-on time: 63ns
Turn-off time: 1.8µs
Type of transistor: IGBT
Power dissipation: 140W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 30nC
Technology: BiMOSFET™
Case: TO247-3
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 677.73 грн |
| 2+ | 543.14 грн |
| 5+ | 513.45 грн |
| IXBH10N300HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Pulsed collector current: 88A
Turn-on time: 805ns
Turn-off time: 2.13µs
Type of transistor: IGBT
Power dissipation: 180W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 46nC
Technology: BiMOSFET™
Case: TO247HV
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 10A
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Pulsed collector current: 88A
Turn-on time: 805ns
Turn-off time: 2.13µs
Type of transistor: IGBT
Power dissipation: 180W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 46nC
Technology: BiMOSFET™
Case: TO247HV
Collector-emitter voltage: 3kV
Gate-emitter voltage: ±20V
Collector current: 10A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4494.51 грн |
| 30+ | 4045.3 грн |
| MCC21-14IO8B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 21A; TO240AA; Ufmax: 1.52V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 21A
Case: TO240AA
Max. forward voltage: 1.52V
Max. forward impulse current: 345A
Gate current: 65/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 21A; TO240AA; Ufmax: 1.52V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 21A
Case: TO240AA
Max. forward voltage: 1.52V
Max. forward impulse current: 345A
Gate current: 65/80mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1466.2 грн |
| 2+ | 1287.6 грн |
| IXGH72N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
товар відсутній
| IXGN72N60C3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W
Technology: GenX3™; PT
Collector current: 52A
Power dissipation: 360W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXGX72N60C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
товар відсутній
| MCC312-12io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y1-CU; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 10.1kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y1-CU; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y1-CU
Max. forward voltage: 1.32V
Max. forward impulse current: 10.1kA
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC312-14io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y1; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y1; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC312-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MCC312-18io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y1; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y1; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13507.72 грн |
| IXGK72N60B3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товар відсутній
| IXGR72N60B3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 40A; 200W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 200W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 63ns
Turn-off time: 370ns
товар відсутній
| MDD95-16N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 120A
Max. load current: 180A
Type of module: diode
Semiconductor structure: double series
Case: TO240AA
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 120A; TO240AA; Ufmax: 1.13V
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 120A
Max. load current: 180A
Type of module: diode
Semiconductor structure: double series
Case: TO240AA
Max. forward impulse current: 2.38kA
Max. forward voltage: 1.13V
Mechanical mounting: screw
товар відсутній
| IXTQ200N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.56 грн |
| 3+ | 303.43 грн |
| 8+ | 286.78 грн |
| IXFH34N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 243 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 568.54 грн |
| 3+ | 378.02 грн |
| 7+ | 357.02 грн |
| IXFH44N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1042.71 грн |
| 3+ | 915.37 грн |
| IXFK44N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXFK64N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK64N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK94N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1042.71 грн |
| 3+ | 915.37 грн |
| 25+ | 908.13 грн |
| IXFN64N50P | |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFN94N50P2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFQ34N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFR44N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| DSEI12-10A | |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Max. off-state voltage: 1kV
Load current: 12A
Max. forward impulse current: 75A
Case: TO220AC
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward voltage: 2.7V
Mounting: THT
Semiconductor structure: single diode
Reverse recovery time: 50ns
Power dissipation: 78W
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 2.29...2.79mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 12A; tube; Ifsm: 75A; TO220AC; 78W; 50ns
Max. off-state voltage: 1kV
Load current: 12A
Max. forward impulse current: 75A
Case: TO220AC
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward voltage: 2.7V
Mounting: THT
Semiconductor structure: single diode
Reverse recovery time: 50ns
Power dissipation: 78W
Type of diode: rectifying
Technology: FRED
Heatsink thickness: 2.29...2.79mm
на замовлення 153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.08 грн |
| 9+ | 105.01 грн |
| 23+ | 99.21 грн |