| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXDN602D2TR | IXYS |
 Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 1998 шт: термін постачання 21-30 дні (днів) |
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IXDN602PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 988 шт: термін постачання 21-30 дні (днів) |
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IXDN602SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
товар відсутній |
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IXDN602SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 879 шт: термін постачання 21-30 дні (днів) |
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IXDN602SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
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| IXDN602SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
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IXGA20N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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IXGA20N120B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 51nC Kind of package: tube Turn-on time: 61ns Turn-off time: 720ns |
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IXDH30N120D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 38A; 300W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 38A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 76A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 170ns Turn-off time: 570ns |
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IXFB30N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 310nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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IXFN30N120P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 75A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.35Ω Gate charge: 310nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXGA30N120B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns |
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IXGH30N120B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns |
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IXGH30N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 115A Mounting: THT Gate charge: 80nC Kind of package: tube Turn-on time: 60ns Turn-off time: 415ns |
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IXGP30N120B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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IXGT30N120B3D1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO268 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns |
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IXYH30N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 500W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 145A Mounting: THT Gate charge: 69nC Kind of package: tube Turn-on time: 71ns Turn-off time: 296ns |
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IXYH30N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 416W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 133A Mounting: THT Gate charge: 69nC Kind of package: tube Turn-on time: 71ns Turn-off time: 296ns |
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IXYP30N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 500W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 145A Mounting: THT Gate charge: 69nC Kind of package: tube Turn-on time: 71ns Turn-off time: 296ns |
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IXA33IF1200HB | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3 Type of transistor: IGBT Technology: Sonic FRD™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 34A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 76nC Kind of package: tube Turn-on time: 110ns Turn-off time: 350ns |
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| DSSK28-006BS-TUB | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube; 90W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Max. load current: 35A Semiconductor structure: common cathode; double Max. forward voltage: 0.52V Case: D2PAK Kind of package: tube Max. forward impulse current: 300A Power dissipation: 90W |
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CPC40055ST | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; Icntrl max: 50mA; 5000mA; max.800VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 5A Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: THT Case: SIP Operating temperature: -40...85°C Body dimensions: 38.1x17.78x3.8mm Switching method: zero voltage switching Insulation voltage: 2.5kV |
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DSA240X150NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 150V Load current: 120A x2 Case: SOT227B Max. forward voltage: 0.85V Max. forward impulse current: 1.6kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
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DSA240X200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 200V Load current: 120A x2 Case: SOT227B Max. forward voltage: 0.87V Max. forward impulse current: 1.6kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
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DCG100X1200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 47Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 47A x2 Case: SOT227B Max. forward voltage: 2.25V Max. forward impulse current: 1.15kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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DCG130X1200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 60A x2 Case: SOT227B Max. forward voltage: 2.3V Max. forward impulse current: 1.15kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
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DCG160X650NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 80A x2 Case: SOT227B Max. forward voltage: 1.35V Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
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DCG45X1200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; 22Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 22A x2 Case: SOT227B Max. forward voltage: 2.2V Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
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DCG85X1200NA | IXYS |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 41A x2 Case: SOT227B Max. forward voltage: 2.2V Max. forward impulse current: 1.15kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
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| MIXA225RF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 250A Case: SimBus F Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 500A Power dissipation: 1.1kW Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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| MIXG240RF1200PTED | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 250A Case: E2-Pack PFP Electrical mounting: Press-Fit Technology: X2PT Mechanical mounting: screw |
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IXFQ140N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO3P Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 90ns |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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IXFA22N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263 Mounting: SMD Kind of package: tube Reverse recovery time: 145ns Drain-source voltage: 650V Drain current: 22A On-state resistance: 0.145Ω Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 37nC Technology: HiPerFET™; X2-Class Kind of channel: enhanced Gate-source voltage: ±30V Case: TO263 |
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IXFH22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO247-3 On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
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IXFP22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 145ns |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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IXFP22N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 37W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 145ns |
на замовлення 296 шт: термін постачання 21-30 дні (днів) |
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DSS60-0045B | IXYS |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 60A; 155W; TO247-2; tube Power dissipation: 155W Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 45V Type of diode: Schottky rectifying Max. forward impulse current: 600A Load current: 60A Max. forward voltage: 0.57V |
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IXGR48N60C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 26A Power dissipation: 125W Case: ISOPLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 230A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 45ns Turn-off time: 187ns |
на замовлення 249 шт: термін постачання 21-30 дні (днів) |
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PLA192E | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: THT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms |
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IXFK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264 Polarisation: unipolar Power dissipation: 830W Type of transistor: N-MOSFET On-state resistance: 18mΩ Drain current: 140A Drain-source voltage: 200V Kind of package: tube Case: TO264 Gate charge: 240nC Mounting: THT Kind of channel: enhanced |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFK140N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264 Polarisation: unipolar Power dissipation: 960W Type of transistor: N-MOSFET On-state resistance: 17mΩ Drain current: 140A Drain-source voltage: 250V Kind of package: tube Case: TO264 Features of semiconductor devices: thrench gate power mosfet Gate charge: 255nC Mounting: THT Kind of channel: enhanced |
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IXFK140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Polarisation: unipolar Power dissipation: 1.04kW Type of transistor: N-MOSFET On-state resistance: 24mΩ Drain current: 140A Drain-source voltage: 300V Kind of package: tube Reverse recovery time: 200ns Case: TO264 Gate charge: 185nC Mounting: THT Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate-source voltage: ±20V |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXTK140N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264 Mounting: THT Reverse recovery time: 180ns Drain-source voltage: 200V Drain current: 140A On-state resistance: 18mΩ Type of transistor: N-MOSFET Power dissipation: 800W Polarisation: unipolar Kind of package: tube Gate charge: 240nC Technology: PolarHT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 |
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IXTK140N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264 Mounting: THT Reverse recovery time: 250ns Drain-source voltage: 300V Drain current: 140A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Kind of package: tube Gate charge: 185nC Technology: Polar™ Kind of channel: enhanced Gate-source voltage: ±20V Case: TO264 |
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IXYK140N90C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264 Mounting: THT Collector-emitter voltage: 900V Gate-emitter voltage: ±20V Collector current: 140A Pulsed collector current: 840A Turn-on time: 122ns Turn-off time: 0.3µs Type of transistor: IGBT Power dissipation: 1.63kW Kind of package: tube Gate charge: 330nC Technology: GenX3™; Planar; XPT™ Case: TO264 |
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IXXH40N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns |
на замовлення 142 шт: термін постачання 21-30 дні (днів) |
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IXXH40N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns |
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IXXH40N65B4H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 61ns Turn-off time: 207ns |
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IXXH40N65C4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 215A Mounting: THT Gate charge: 68nC Kind of package: tube Turn-on time: 71ns Turn-off time: 142ns |
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IXFA16N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO263 On-state resistance: 470mΩ Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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IXFH16N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO247-3 On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
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IXFP16N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO220AB On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
на замовлення 269 шт: термін постачання 21-30 дні (днів) |
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IXFP76N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns Mounting: THT Reverse recovery time: 69ns Drain-source voltage: 150V Drain current: 76A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 350W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 97nC Kind of channel: enhanced Case: TO220AB |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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IXDH20N120 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 175ns Turn-off time: 570ns |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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IXDH20N120D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 175ns Turn-off time: 570ns |
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IXFK20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: TO264 On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhanced |
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IXFN20N120P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Pulsed drain current: 50A Power dissipation: 595W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 570mΩ Gate charge: 193nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IXFR20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 13A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.63Ω Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhanced |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFX20N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 20A Power dissipation: 780W Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 193nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXGH20N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 180W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 50nC Kind of package: tube Turn-on time: 66ns Turn-off time: 1.53µs |
на замовлення 161 шт: термін постачання 21-30 дні (днів) |
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| IXDN602D2TR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 1998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.73 грн |
| 15+ | 57.21 грн |
| 41+ | 53.59 грн |
| 1000+ | 52.14 грн |
| IXDN602PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.29 грн |
| 10+ | 68.8 грн |
| 17+ | 52.87 грн |
| 45+ | 49.97 грн |
| IXDN602SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDN602SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 879 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.95 грн |
| 17+ | 52.14 грн |
| 45+ | 49.24 грн |
| IXDN602SIATR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDN602SITR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXGA20N120A3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 389.17 грн |
| 3+ | 325.16 грн |
| 4+ | 259.26 грн |
| 9+ | 244.77 грн |
| IXGA20N120B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 51nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 720ns
товар відсутній
| IXDH30N120D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 38A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 38A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 76A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 170ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 38A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 38A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 76A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 170ns
Turn-off time: 570ns
товар відсутній
| IXFB30N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| IXFN30N120P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.35Ω
Gate charge: 310nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.35Ω
Gate charge: 310nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXGA30N120B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній
| IXGH30N120B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній
| IXGH30N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
товар відсутній
| IXGP30N120B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.97 грн |
| 3+ | 326.61 грн |
| 8+ | 308.5 грн |
| IXGT30N120B3D1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній
| IXYH30N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
| IXYH30N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
| IXYP30N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
| IXA33IF1200HB |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 34A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 350ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Technology: Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 34A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 350ns
товар відсутній
| DSSK28-006BS-TUB |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 35A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 300A
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 15Ax2; D2PAK; tube; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Max. load current: 35A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.52V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 300A
Power dissipation: 90W
товар відсутній
| CPC40055ST |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 5000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 5A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP
Operating temperature: -40...85°C
Body dimensions: 38.1x17.78x3.8mm
Switching method: zero voltage switching
Insulation voltage: 2.5kV
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 5000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 5A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP
Operating temperature: -40...85°C
Body dimensions: 38.1x17.78x3.8mm
Switching method: zero voltage switching
Insulation voltage: 2.5kV
товар відсутній
| DSA240X150NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.85V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 150V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.85V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
товар відсутній
| DSA240X200NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.87V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 120Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 200V
Load current: 120A x2
Case: SOT227B
Max. forward voltage: 0.87V
Max. forward impulse current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
товар відсутній
| DCG100X1200NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 47Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 47A x2
Case: SOT227B
Max. forward voltage: 2.25V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 47Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 47A x2
Case: SOT227B
Max. forward voltage: 2.25V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11387.19 грн |
| DCG130X1200NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227B
Max. forward voltage: 2.3V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| DCG160X650NA |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 80A x2
Case: SOT227B
Max. forward voltage: 1.35V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 650V; 80Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 80A x2
Case: SOT227B
Max. forward voltage: 1.35V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| DCG45X1200NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 22Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 22A x2
Case: SOT227B
Max. forward voltage: 2.2V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; 22Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 22A x2
Case: SOT227B
Max. forward voltage: 2.2V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| DCG85X1200NA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 41A x2
Case: SOT227B
Max. forward voltage: 2.2V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 41A x2
Case: SOT227B
Max. forward voltage: 2.2V
Max. forward impulse current: 1.15kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Technology: SiC
товар відсутній
| MIXA225RF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: SimBus F
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Power dissipation: 1.1kW
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: SimBus F
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Power dissipation: 1.1kW
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXG240RF1200PTED |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 250A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Technology: X2PT
Mechanical mounting: screw
товар відсутній
| IXFQ140N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO3P
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 90ns
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 762.73 грн |
| 2+ | 567.04 грн |
| 5+ | 535.9 грн |
| 30+ | 525.76 грн |
| IXFA22N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 145ns
Drain-source voltage: 650V
Drain current: 22A
On-state resistance: 0.145Ω
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 37nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO263
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Mounting: SMD
Kind of package: tube
Reverse recovery time: 145ns
Drain-source voltage: 650V
Drain current: 22A
On-state resistance: 0.145Ω
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 37nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO263
товар відсутній
| IXFH22N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
на замовлення 265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 396.18 грн |
| 4+ | 262.15 грн |
| 9+ | 247.67 грн |
| IXFP22N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 145ns
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 304.94 грн |
| 3+ | 254.19 грн |
| 5+ | 202.77 грн |
| 12+ | 191.91 грн |
| IXFP22N65X2M |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 37W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 145ns
на замовлення 296 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.01 грн |
| 3+ | 203.5 грн |
| 5+ | 183.22 грн |
| 13+ | 173.08 грн |
| 50+ | 170.91 грн |
| DSS60-0045B | |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; 155W; TO247-2; tube
Power dissipation: 155W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 600A
Load current: 60A
Max. forward voltage: 0.57V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 60A; 155W; TO247-2; tube
Power dissipation: 155W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 600A
Load current: 60A
Max. forward voltage: 0.57V
товар відсутній
| IXGR48N60C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 26A
Power dissipation: 125W
Case: ISOPLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 187ns
на замовлення 249 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 782.23 грн |
| 2+ | 492.45 грн |
| 5+ | 464.93 грн |
| PLA192E |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
товар відсутній
| IXFK140N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Polarisation: unipolar
Power dissipation: 830W
Type of transistor: N-MOSFET
On-state resistance: 18mΩ
Drain current: 140A
Drain-source voltage: 200V
Kind of package: tube
Case: TO264
Gate charge: 240nC
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Polarisation: unipolar
Power dissipation: 830W
Type of transistor: N-MOSFET
On-state resistance: 18mΩ
Drain current: 140A
Drain-source voltage: 200V
Kind of package: tube
Case: TO264
Gate charge: 240nC
Mounting: THT
Kind of channel: enhanced
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1118.36 грн |
| IXFK140N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Polarisation: unipolar
Power dissipation: 960W
Type of transistor: N-MOSFET
On-state resistance: 17mΩ
Drain current: 140A
Drain-source voltage: 250V
Kind of package: tube
Case: TO264
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 255nC
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Polarisation: unipolar
Power dissipation: 960W
Type of transistor: N-MOSFET
On-state resistance: 17mΩ
Drain current: 140A
Drain-source voltage: 250V
Kind of package: tube
Case: TO264
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 255nC
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IXFK140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Kind of package: tube
Reverse recovery time: 200ns
Case: TO264
Gate charge: 185nC
Mounting: THT
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Kind of package: tube
Reverse recovery time: 200ns
Case: TO264
Gate charge: 185nC
Mounting: THT
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1170.62 грн |
| 3+ | 1027.62 грн |
| IXTK140N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 200V
Drain current: 140A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 800W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Mounting: THT
Reverse recovery time: 180ns
Drain-source voltage: 200V
Drain current: 140A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 800W
Polarisation: unipolar
Kind of package: tube
Gate charge: 240nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
товар відсутній
| IXTK140N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Reverse recovery time: 250ns
Drain-source voltage: 300V
Drain current: 140A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Reverse recovery time: 250ns
Drain-source voltage: 300V
Drain current: 140A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO264
товар відсутній
| IXYK140N90C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
товар відсутній
| IXXH40N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
на замовлення 142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 396.96 грн |
| 3+ | 331.68 грн |
| 4+ | 263.6 грн |
| 9+ | 249.12 грн |
| IXXH40N65B4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
товар відсутній
| IXXH40N65B4H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
товар відсутній
| IXXH40N65C4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
товар відсутній
| IXFA16N60P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 485.09 грн |
| 3+ | 322.99 грн |
| 8+ | 305.61 грн |
| IXFH16N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFP16N60P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 269 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.06 грн |
| 3+ | 257.09 грн |
| 5+ | 204.94 грн |
| 12+ | 194.08 грн |
| IXFP76N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns
Mounting: THT
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO220AB; 69ns
Mounting: THT
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Case: TO220AB
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.3 грн |
| 3+ | 230.29 грн |
| 5+ | 183.22 грн |
| 13+ | 173.8 грн |
| IXDH20N120 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
на замовлення 238 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 464.04 грн |
| 3+ | 308.5 грн |
| 8+ | 291.85 грн |
| IXDH20N120D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 175ns
Turn-off time: 570ns
товар відсутній
| IXFK20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 20A; 780W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: TO264
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFN20N120P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 570mΩ
Gate charge: 193nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 595W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 570mΩ
Gate charge: 193nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2804.49 грн |
| 10+ | 2559.27 грн |
| IXFR20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 13A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1686.12 грн |
| 2+ | 1480.23 грн |
| IXFX20N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 20A; 780W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 20A
Power dissipation: 780W
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1462.3 грн |
| IXGH20N120A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 161 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 524.87 грн |
| 3+ | 317.92 грн |
| 8+ | 300.54 грн |