Технічний опис IPA90R800C3XKSA1 Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 460µA, Supplier Device Package: PG-TO220-FP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Інші пропозиції IPA90R800C3XKSA1
Фото | Назва | Виробник | Інформація |
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IPA90R800C3XKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPA90R800C3XKSA1 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 460µA Supplier Device Package: PG-TO220-FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товар відсутній |
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IPA90R800C3XKSA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
IPA90R800C3XKSA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |