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BSC027N06LS5ATMA1 Infineon Technologies
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
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5000+ | 56.74 грн |
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Технічний опис BSC027N06LS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 49µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V.
Інші пропозиції BSC027N06LS5ATMA1 за ціною від 70.29 грн до 187.78 грн
Фото | Назва | Виробник | Інформація |
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BSC027N06LS5ATMA1 | Виробник : Infineon Technologies |
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на замовлення 654 шт: термін постачання 21-30 дні (днів) |
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BSC027N06LS5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W Mounting: SMD Case: PG-TDSON-8 Power dissipation: 83W On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Technology: OptiMOS® Drain current: 84A Drain-source voltage: 60V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Polarisation: unipolar кількість в упаковці: 5000 шт |
товар відсутній |
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BSC027N06LS5ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 49µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V |
товар відсутній |
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BSC027N06LS5ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 49µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V |
товар відсутній |
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BSC027N06LS5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 84A; Idm: 400A; 83W Mounting: SMD Case: PG-TDSON-8 Power dissipation: 83W On-state resistance: 2.7mΩ Type of transistor: N-MOSFET Technology: OptiMOS® Drain current: 84A Drain-source voltage: 60V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Polarisation: unipolar |
товар відсутній |