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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES IKP06N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
FZ1000R33HE3BPSA1 INFINEON TECHNOLOGIES FZ1000R33HE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Case: AG-IHVB130-3
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
товар відсутній
BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 INFINEON TECHNOLOGIES BSZ100N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 INFINEON TECHNOLOGIES BSZ100N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES BSZ100N06LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Drain current: 20A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 60V
товар відсутній
BSZ100N06NSATMA1 BSZ100N06NSATMA1 INFINEON TECHNOLOGIES BSZ100N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Drain current: 40A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 60V
товар відсутній
IGZ100N65H5XKSA1 IGZ100N65H5XKSA1 INFINEON TECHNOLOGIES IGZ100N65H5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector current: 101A
Pulsed collector current: 400A
Turn-on time: 40ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 268W
Kind of package: tube
Gate charge: 0.21µC
Technology: TRENCHSTOP™ 5
Mounting: THT
Case: TO247-4
Collector-emitter voltage: 650V
товар відсутній
IRF2804LPBF IRF2804LPBF INFINEON TECHNOLOGIES irf2804pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO262
Mounting: THT
Kind of channel: enhanced
товар відсутній
IRF2804PBF IRF2804PBF INFINEON TECHNOLOGIES irf2804pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
3+140.06 грн
11+ 85.97 грн
28+ 81.56 грн
Мінімальне замовлення: 3
IRF2804STRLPBF IRF2804STRLPBF INFINEON TECHNOLOGIES IRF2804STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF2804STRRPBF IRF2804STRRPBF INFINEON TECHNOLOGIES IRF2804STRRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF2804L AUIRF2804L INFINEON TECHNOLOGIES irf2804.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
товар відсутній
AUIRF2804STRL AUIRF2804STRL INFINEON TECHNOLOGIES auirf2804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
DD540N22KHPSA1 DD540N22KHPSA1 INFINEON TECHNOLOGIES DD540N2xK.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 540A; BG-PB60AT-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB60AT-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.78V
Load current: 540A
Semiconductor structure: double series
Max. forward impulse current: 16.5kA
товар відсутній
DD540N26K  DD540N26K  INFINEON TECHNOLOGIES DD540N2xK.pdf Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB60AT-1
Max. off-state voltage: 2.6kV
Max. forward voltage: 1.48V
Load current: 540A
Semiconductor structure: double series
Max. forward impulse current: 16.5kA
товар відсутній
DZ540N22K  DZ540N22K  INFINEON TECHNOLOGIES DZ540N22K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB501-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.78V
Load current: 540A
Semiconductor structure: single diode
Max. forward impulse current: 16.5kA
товар відсутній
DZ540N26K DZ540N26K INFINEON TECHNOLOGIES DZ540N26K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB501-1
Max. off-state voltage: 2.6kV
Max. forward voltage: 1.64V
Load current: 540A
Semiconductor structure: single diode
Max. forward impulse current: 16.5kA
товар відсутній
ETD540N22P60HPSA1 INFINEON TECHNOLOGIES ETD540N22P60_ETT540N22P60.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. load current: 700A
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
товар відсутній
ETT540N22P60HPSA1 INFINEON TECHNOLOGIES ETD540N22P60_ETT540N22P60.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
товар відсутній
IDD06SG60C IDD06SG60C INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 6A; PG-TO252-3; 71W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 71W
Max. forward voltage: 2.1V
Load current: 6A
Max. forward impulse current: 23A
Max. off-state voltage: 600V
Leakage current: 0.5µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 INFINEON TECHNOLOGIES BSF450NE7NH3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Case: CanPAK™ S; MG-WDSON-2
Mounting: SMD
Drain-source voltage: 75V
Drain current: 15A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
IPD80R450P7ATMA1 IPD80R450P7ATMA1 INFINEON TECHNOLOGIES IPD80R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES IPD95R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
на замовлення 1891 шт:
термін постачання 21-30 дні (днів)
3+178.83 грн
5+ 148.43 грн
8+ 110.95 грн
22+ 104.34 грн
Мінімальне замовлення: 3
IPU95R450P7AKMA1 IPU95R450P7AKMA1 INFINEON TECHNOLOGIES IPU95R450P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
товар відсутній
XMC4500F100F768ACXQMA1 XMC4500F100F768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 768kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4500
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
XMC4500F100K768ACXQMA1 XMC4500F100K768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 768kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Family: XMC4500
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
XMC4500F144F768ACXQMA1 XMC4500F144F768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 768kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
XMC4500F144K768ACXQMA1 XMC4500F144K768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Type of integrated circuit: ARM microcontroller
товар відсутній
IDH06G65C5 IDH06G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 62W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Power dissipation: 62W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 54A
Max. forward voltage: 1.8V
Leakage current: 1.2µA
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
3+137.4 грн
9+ 105.07 грн
Мінімальне замовлення: 3
DD100N16S  DD100N16S  INFINEON TECHNOLOGIES DD100N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Max. forward impulse current: 2.5kA
Max. forward voltage: 1.6V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Type of module: diode
Semiconductor structure: double series
Case: BG-SB20-1
товар відсутній
BCR503E6327HTSA1 BCR503E6327HTSA1 INFINEON TECHNOLOGIES BCR503.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Collector-emitter voltage: 50V
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Type of transistor: NPN
Case: SOT23
Collector current: 0.5A
на замовлення 11034 шт:
термін постачання 21-30 дні (днів)
26+15.51 грн
61+ 6.03 грн
100+ 5.36 грн
207+ 4.11 грн
568+ 3.89 грн
Мінімальне замовлення: 26
IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Drain-source voltage: 250V
Drain current: 13.3A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: PG-TO220-3
на замовлення 483 шт:
термін постачання 21-30 дні (днів)
3+160.18 грн
7+ 133 грн
18+ 126.38 грн
Мінімальне замовлення: 3
AUIRGP4062D AUIRGP4062D INFINEON TECHNOLOGIES AUIRGP4062D.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
товар відсутній
IRFS23N20DTRLP IRFS23N20DTRLP INFINEON TECHNOLOGIES IRFS23N20DTRLP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3004TRLPBF INFINEON TECHNOLOGIES irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFS3006TRL7PP IRFS3006TRL7PP INFINEON TECHNOLOGIES irfs3006-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3006TRLPBF INFINEON TECHNOLOGIES irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFS3107TRL7PP IRFS3107TRL7PP INFINEON TECHNOLOGIES irfs3107-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3107TRLPBF IRFS3107TRLPBF INFINEON TECHNOLOGIES irfs3107-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3206TRRPBF IRFS3206TRRPBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3306TRLPBF IRFS3306TRLPBF INFINEON TECHNOLOGIES irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 603 шт:
термін постачання 21-30 дні (днів)
3+146.39 грн
5+ 122.71 грн
9+ 94.79 грн
25+ 89.64 грн
Мінімальне замовлення: 3
IRFS3307ZTRLPBF IRFS3307ZTRLPBF INFINEON TECHNOLOGIES IRFS3307ZTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3806TRLPBF INFINEON TECHNOLOGIES irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFS38N20DTRLP IRFS38N20DTRLP INFINEON TECHNOLOGIES irfs38n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS4010TRL7PP INFINEON TECHNOLOGIES irfs4010-7ppbf.pdf?fileId=5546d462533600a401535636c33c2185 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; Idm: 740A; 380W; D2PAK-7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 740A
Mounting: SMD
Case: D2PAK-7
товар відсутній
IRFS4020TRLPBF IRFS4020TRLPBF INFINEON TECHNOLOGIES IRFS4020TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Type of transistor: N-MOSFET
Power dissipation: 100W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
товар відсутній
IRFS4115TRLPBF INFINEON TECHNOLOGIES irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFS4127TRLPBF IRFS4127TRLPBF INFINEON TECHNOLOGIES irfs4127pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES irf1310n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 73.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
5+82.3 грн
6+ 68.33 грн
10+ 60.99 грн
17+ 52.9 грн
45+ 49.97 грн
Мінімальне замовлення: 5
IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD042P03L3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -280A
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 6.8mΩ
Type of transistor: P-MOSFET
товар відсутній
IFX9201SGAUMA1 IFX9201SGAUMA1 INFINEON TECHNOLOGIES IFX9201SG-DTE.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...125°C
Operating voltage: 5...36V
Frequency: 20kHz
Kind of package: reel; tape
товар відсутній
T590N12TOFXPSA1 INFINEON TECHNOLOGIES T590N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Kind of package: in-tray
Max. forward impulse current: 9.4kA
Gate current: 250mA
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. off-state voltage: 1.2kV
Load current: 590A
Max. load current: 1.25kA
Case: BG-T5726K-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
товар відсутній
BTS142D BTS142D INFINEON TECHNOLOGIES BTS142D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 23mΩ
Kind of package: reel; tape
Technology: HITFET®
Output voltage: 42V
Power dissipation: 59W
товар відсутній
IDP40E65D2XKSA1 IDP40E65D2XKSA1 INFINEON TECHNOLOGIES IDP40E65D2XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
3+142.43 грн
4+ 118.3 грн
9+ 99.93 грн
24+ 94.05 грн
50+ 91.11 грн
Мінімальне замовлення: 3
BSP149H6327XTSA1 BSP149H6327XTSA1 INFINEON TECHNOLOGIES BSP149H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
на замовлення 1024 шт:
термін постачання 21-30 дні (днів)
5+79.92 грн
9+ 44.09 грн
23+ 38.94 грн
62+ 36.74 грн
1000+ 35.27 грн
Мінімальне замовлення: 5
BSP149H6906XTSA1 BSP149H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
товар відсутній
IM240-M6Y1B INFINEON TECHNOLOGIES Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; ClPOS™ Micro
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro
Case: DIP23
Output current: 4A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 12.5...17.5/0...450V
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 8.9W
товар відсутній
IRFB7430PBF IRFB7430PBF INFINEON TECHNOLOGIES IRFB7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
2+262.71 грн
3+ 218.97 грн
5+ 179.29 грн
14+ 169 грн
Мінімальне замовлення: 2
IRFHM8329TRPBF IRFHM8329TRPBF INFINEON TECHNOLOGIES IRFHM8329TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN3.3X3.3
товар відсутній
IKP06N60TXKSA1 IKP06N60T.pdf
IKP06N60TXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
FZ1000R33HE3BPSA1 FZ1000R33HE3.pdf
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Pulsed collector current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: TRENCHSTOP™
Case: AG-IHVB130-3
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
товар відсутній
BSZ100N03LSGATMA1 BSZ100N03LSG-DTE.pdf
BSZ100N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ100N03MSGATMA1 BSZ100N03MSG-DTE.pdf
BSZ100N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ100N06LS3GATMA1 BSZ100N06LS3G-DTE.pdf
BSZ100N06LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Drain current: 20A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 60V
товар відсутній
BSZ100N06NSATMA1 BSZ100N06NS-DTE.pdf
BSZ100N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Drain current: 40A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
Drain-source voltage: 60V
товар відсутній
IGZ100N65H5XKSA1 IGZ100N65H5XKSA1-DTE.pdf
IGZ100N65H5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Manufacturer series: H5
Gate-emitter voltage: ±20V
Collector current: 101A
Pulsed collector current: 400A
Turn-on time: 40ns
Turn-off time: 485ns
Type of transistor: IGBT
Power dissipation: 268W
Kind of package: tube
Gate charge: 0.21µC
Technology: TRENCHSTOP™ 5
Mounting: THT
Case: TO247-4
Collector-emitter voltage: 650V
товар відсутній
IRF2804LPBF description irf2804pbf.pdf
IRF2804LPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO262
Mounting: THT
Kind of channel: enhanced
товар відсутній
IRF2804PBF irf2804pbf.pdf
IRF2804PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+140.06 грн
11+ 85.97 грн
28+ 81.56 грн
Мінімальне замовлення: 3
IRF2804STRLPBF IRF2804STRLPBF.pdf
IRF2804STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF2804STRRPBF IRF2804STRRPBF.pdf
IRF2804STRRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRF2804L irf2804.pdf
AUIRF2804L
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 160nC
Kind of channel: enhanced
товар відсутній
AUIRF2804STRL auirf2804.pdf
AUIRF2804STRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
DD540N22KHPSA1 DD540N2xK.pdf
DD540N22KHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 540A; BG-PB60AT-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB60AT-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.78V
Load current: 540A
Semiconductor structure: double series
Max. forward impulse current: 16.5kA
товар відсутній
DD540N26K  DD540N2xK.pdf
DD540N26K 
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB60AT-1
Max. off-state voltage: 2.6kV
Max. forward voltage: 1.48V
Load current: 540A
Semiconductor structure: double series
Max. forward impulse current: 16.5kA
товар відсутній
DZ540N22K  DZ540N22K.pdf
DZ540N22K 
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB501-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 0.78V
Load current: 540A
Semiconductor structure: single diode
Max. forward impulse current: 16.5kA
товар відсутній
DZ540N26K DZ540N26K.pdf
DZ540N26K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB501-1
Max. off-state voltage: 2.6kV
Max. forward voltage: 1.64V
Load current: 540A
Semiconductor structure: single diode
Max. forward impulse current: 16.5kA
товар відсутній
ETD540N22P60HPSA1 ETD540N22P60_ETT540N22P60.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 542A; BG-PB60ECO-1; Ufmax: 1.73V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. load current: 700A
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
товар відсутній
ETT540N22P60HPSA1 ETD540N22P60_ETT540N22P60.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 542A; BG-PB60ECO-1; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.73V
Load current: 542A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.3kA
товар відсутній
IDD06SG60C
IDD06SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 6A; PG-TO252-3; 71W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 71W
Max. forward voltage: 2.1V
Load current: 6A
Max. forward impulse current: 23A
Max. off-state voltage: 600V
Leakage current: 0.5µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній
BSF450NE7NH3XUMA1 BSF450NE7NH3-DTE.pdf
BSF450NE7NH3XUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Case: CanPAK™ S; MG-WDSON-2
Mounting: SMD
Drain-source voltage: 75V
Drain current: 15A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
IPD80R450P7ATMA1 IPD80R450P7.pdf
IPD80R450P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPD95R450P7ATMA1 IPD95R450P7.pdf
IPD95R450P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
на замовлення 1891 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+178.83 грн
5+ 148.43 грн
8+ 110.95 грн
22+ 104.34 грн
Мінімальне замовлення: 3
IPU95R450P7AKMA1 IPU95R450P7.pdf
IPU95R450P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
товар відсутній
XMC4500F100F768ACXQMA1 XMC4500-DTE.pdf
XMC4500F100F768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 768kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 55
Family: XMC4500
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
XMC4500F100K768ACXQMA1 XMC4500-DTE.pdf
XMC4500F100K768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 768kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...125°C
Number of inputs/outputs: 55
Family: XMC4500
Number of A/D channels: 18
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
XMC4500F144F768ACXQMA1 XMC4500-DTE.pdf
XMC4500F144F768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Memory: 160kB SRAM; 768kB FLASH
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Operating temperature: -40...85°C
Number of inputs/outputs: 91
Family: XMC4500
Number of A/D channels: 26
Number of 16bit timers: 26
Kind of architecture: Cortex M4
товар відсутній
XMC4500F144K768ACXQMA1 XMC4500-DTE.pdf
XMC4500F144K768ACXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,768kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-144
Number of inputs/outputs: 91
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Type of integrated circuit: ARM microcontroller
товар відсутній
IDH06G65C5
IDH06G65C5
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 62W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Power dissipation: 62W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 54A
Max. forward voltage: 1.8V
Leakage current: 1.2µA
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+137.4 грн
9+ 105.07 грн
Мінімальне замовлення: 3
DD100N16S  DD100N16S.pdf
DD100N16S 
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Max. forward impulse current: 2.5kA
Max. forward voltage: 1.6V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 130A
Type of module: diode
Semiconductor structure: double series
Case: BG-SB20-1
товар відсутній
BCR503E6327HTSA1 BCR503.pdf
BCR503E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Collector-emitter voltage: 50V
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Type of transistor: NPN
Case: SOT23
Collector current: 0.5A
на замовлення 11034 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
26+15.51 грн
61+ 6.03 грн
100+ 5.36 грн
207+ 4.11 грн
568+ 3.89 грн
Мінімальне замовлення: 26
IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Drain-source voltage: 250V
Drain current: 13.3A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: PG-TO220-3
на замовлення 483 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+160.18 грн
7+ 133 грн
18+ 126.38 грн
Мінімальне замовлення: 3
AUIRGP4062D AUIRGP4062D.pdf
AUIRGP4062D
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
товар відсутній
IRFS23N20DTRLP IRFS23N20DTRLP.pdf
IRFS23N20DTRLP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3004TRLPBF irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFS3006TRL7PP irfs3006-7ppbf.pdf
IRFS3006TRL7PP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3006TRLPBF irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFS3107TRL7PP irfs3107-7ppbf.pdf
IRFS3107TRL7PP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3107TRLPBF irfs3107-7ppbf.pdf
IRFS3107TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3206TRRPBF irfs3206pbf.pdf
IRFS3206TRRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3306TRLPBF irfs3306pbf.pdf?fileId=5546d462533600a40153563682652165
IRFS3306TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 603 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+146.39 грн
5+ 122.71 грн
9+ 94.79 грн
25+ 89.64 грн
Мінімальне замовлення: 3
IRFS3307ZTRLPBF IRFS3307ZTRLPBF.pdf
IRFS3307ZTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS3806TRLPBF irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFS38N20DTRLP irfs38n20dpbf.pdf
IRFS38N20DTRLP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFS4010TRL7PP irfs4010-7ppbf.pdf?fileId=5546d462533600a401535636c33c2185
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; Idm: 740A; 380W; D2PAK-7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 380W
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 740A
Mounting: SMD
Case: D2PAK-7
товар відсутній
IRFS4020TRLPBF IRFS4020TRLPBF.pdf
IRFS4020TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Type of transistor: N-MOSFET
Power dissipation: 100W
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
товар відсутній
IRFS4115TRLPBF irfs4115pbf.pdf?fileId=5546d462533600a401535636e5d2218f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 70A; Idm: 396A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70A
Pulsed drain current: 396A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFS4127TRLPBF irfs4127pbf.pdf
IRFS4127TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF1310NPBF irf1310n.pdf
IRF1310NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 73.3nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+82.3 грн
6+ 68.33 грн
10+ 60.99 грн
17+ 52.9 грн
45+ 49.97 грн
Мінімальне замовлення: 5
IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD042P03L3GATMA1 Infineon-IPD042P03L3_G-DS-v02_02-en.pdf?fileId=db3a30431d8a6b3c011d90c8c6e60425
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -280A
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 6.8mΩ
Type of transistor: P-MOSFET
товар відсутній
IFX9201SGAUMA1 IFX9201SG-DTE.pdf
IFX9201SGAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...125°C
Operating voltage: 5...36V
Frequency: 20kHz
Kind of package: reel; tape
товар відсутній
T590N12TOFXPSA1 T590N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Kind of package: in-tray
Max. forward impulse current: 9.4kA
Gate current: 250mA
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. off-state voltage: 1.2kV
Load current: 590A
Max. load current: 1.25kA
Case: BG-T5726K-1
Type of thyristor: hockey-puck
Mounting: Press-Pack
товар відсутній
BTS142D BTS142D.pdf
BTS142D
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 23mΩ
Kind of package: reel; tape
Technology: HITFET®
Output voltage: 42V
Power dissipation: 59W
товар відсутній
IDP40E65D2XKSA1 IDP40E65D2XKSA1.pdf
IDP40E65D2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 40A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+142.43 грн
4+ 118.3 грн
9+ 99.93 грн
24+ 94.05 грн
50+ 91.11 грн
Мінімальне замовлення: 3
BSP149H6327XTSA1 BSP149H6327XTSA1.pdf
BSP149H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
на замовлення 1024 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+79.92 грн
9+ 44.09 грн
23+ 38.94 грн
62+ 36.74 грн
1000+ 35.27 грн
Мінімальне замовлення: 5
BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depleted
товар відсутній
IM240-M6Y1B
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; ClPOS™ Micro
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro
Case: DIP23
Output current: 4A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 12.5...17.5/0...450V
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 8.9W
товар відсутній
IRFB7430PBF IRFB7430PBF.pdf
IRFB7430PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 409A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+262.71 грн
3+ 218.97 грн
5+ 179.29 грн
14+ 169 грн
Мінімальне замовлення: 2
IRFHM8329TRPBF IRFHM8329TRPBF.pdf
IRFHM8329TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.6W; PQFN3.3X3.3
Mounting: SMD
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN3.3X3.3
товар відсутній
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