Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136447) > Сторінка 2232 з 2275
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IFX1050GVIO | INFINEON TECHNOLOGIES |
 Category: CAN interfaces - integrated circuitsDescription: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC Case: PG-DSO-8 Interface: CAN Mounting: SMD Operating temperature: -40...125°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 70mA |
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IFX91041EJV50 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 1.8A; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...45V DC Output voltage: 5V DC Output current: 1.8A Case: PG-DSO-8-EP Mounting: SMD Frequency: 0.37MHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C |
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TLS810D1EJV50XUMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.2V Output voltage: 5V Output current: 0.1A Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Input voltage: 2.75...42V |
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IFX27001TFV50ATMA1 | INFINEON TECHNOLOGIES |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD Kind of package: reel; tape Output voltage: 5V Output current: 1A Voltage drop: 1.3V Type of integrated circuit: voltage regulator Input voltage: 0...40V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: DPAK |
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IR2301PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Supply voltage: 5...20V DC Operating temperature: -40...125°C Mounting: THT Case: DIP8 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Power: 1W Turn-on time: 220ns Turn-off time: 200ns Output current: -350...200mA Type of integrated circuit: driver Number of channels: 2 |
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IR2301SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Supply voltage: 5...20V DC Operating temperature: -40...125°C Mounting: SMD Case: SO8 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Power: 625mW Turn-on time: 220ns Turn-off time: 200ns Output current: -350...200mA Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: charge pump; integrated bootstrap functionality |
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IR2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Supply voltage: 10...20V DC Operating temperature: -40...125°C Mounting: SMD Case: SO8 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Power: 625mW Turn-on time: 220ns Turn-off time: 0.22µs Output current: -130...60mA Type of integrated circuit: driver Number of channels: 2 |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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IR2308SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Supply voltage: 10...20V DC Operating temperature: -40...125°C Mounting: SMD Case: SO8 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Power: 625mW Turn-on time: 220ns Turn-off time: 200ns Output current: -350...200mA Type of integrated circuit: driver Number of channels: 2 |
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IRF8010PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 260W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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IRF8010STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 260W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF8113TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8 Mounting: SMD Case: SO8 Power dissipation: 2.5W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 135A Drain-source voltage: 30V Drain current: 13.8A On-state resistance: 5.6mΩ Type of transistor: N-MOSFET |
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IRF8313TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.7A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF8707TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9.1A On-state resistance: 17.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 9.3nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 88A Mounting: SMD Case: SO8 |
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IRFH8303TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 280A Power dissipation: 156W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPB019N08N3G | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 80V Drain current: 180A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar |
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IRFS7430TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 240A Power dissipation: 375W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 0.55mΩ Mounting: SMD Gate charge: 305nC Kind of channel: enhanced |
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IRFH8311TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFS7440TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 208W Case: D2PAK Mounting: SMD Kind of channel: enhanced |
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IRLS3034TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 343A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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| AUIRLS3034 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 243A Power dissipation: 375W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 108nC Kind of channel: enhanced |
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IRF7739L1TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of channel: enhanced |
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BSC030P03NS3GAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8 Technology: OptiMOS™ P3 Mounting: SMD Power dissipation: 125W Case: PG-TDSON-8 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Drain-source voltage: -30V Drain current: -100A On-state resistance: 3mΩ Type of transistor: P-MOSFET |
на замовлення 3200 шт: термін постачання 21-30 дні (днів) |
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BSC060P03NS3EGATMA | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: -30V Drain current: -100A On-state resistance: 6mΩ Type of transistor: P-MOSFET Power dissipation: 83W Polarisation: unipolar Technology: OptiMOS™ P3 Kind of channel: enhanced Gate-source voltage: ±25V |
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IFCM20T65GDXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz Type of integrated circuit: driver Frequency: 60kHz Operating voltage: 13.5...16.5/0...450V Mounting: THT Operating temperature: -40...125°C Case: PG-MDIP24 Kind of integrated circuit: 2-phase motor controller; IPM Output current: 20A Technology: ClPOS™ Mini; TRENCHSTOP™ 5 Voltage class: 650V Kind of package: tube Integrated circuit features: interleaved PFC Power dissipation: 52.3W |
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IFCM20U65GDXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IPM,3-phase motor controller; PG-MDIP24; 20A; 60kHz Type of integrated circuit: driver Frequency: 60kHz Operating voltage: 13.5...16.5/0...450V Mounting: THT Operating temperature: -40...125°C Case: PG-MDIP24 Kind of integrated circuit: 3-phase motor controller; IPM Output current: 20A Technology: ClPOS™ Mini; TRENCHSTOP™ 5 Voltage class: 650V Kind of package: tube Integrated circuit features: interleaved PFC Power dissipation: 52.3W |
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IFCM30T65GDXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 30A; 60kHz Type of integrated circuit: driver Frequency: 60kHz Operating voltage: 13.5...16.5/0...450V Mounting: THT Operating temperature: -40...125°C Case: PG-MDIP24 Kind of integrated circuit: 2-phase motor controller; IPM Output current: 30A Technology: ClPOS™ Mini; TRENCHSTOP™ 5 Voltage class: 650V Kind of package: tube Integrated circuit features: interleaved PFC Power dissipation: 60.4W |
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IGCM04G60HAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™ Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -4...4A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP Power dissipation: 21.8W |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IFCM30U65GDXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 30A Type of integrated circuit: driver Frequency: 60kHz Operating voltage: 13.5...16.5/0...450V Mounting: THT Operating temperature: -40...125°C Topology: IGBT three-phase bridge; thermistor Case: PG-MDIP24 Kind of integrated circuit: 3-phase motor controller; IPM Output current: 30A Technology: ClPOS™ Mini; TRENCHSTOP™ 5 Voltage class: 650V Kind of package: tube Integrated circuit features: interleaved PFC Power dissipation: 60.4W |
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IGCM04F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -4...4A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP Power dissipation: 21.8W |
на замовлення 247 шт: термін постачання 21-30 дні (днів) |
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IGCM06F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -6...6A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP Power dissipation: 23.6W |
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IGCM10F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -10...10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP Power dissipation: 26.1W |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| IGCM20F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: DIP 36x21 (PG-DIP-24) Output current: -20...20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP |
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IKCM10H60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -10...10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Voltage class: 600V Power dissipation: 23.1W |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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IKCM10L60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -10...10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Voltage class: 600V Power dissipation: 25.2W |
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IKCM15H60GAXKMA2 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -15...15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Voltage class: 600V Power dissipation: 25.2W |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IKCM15L60GDXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Frequency: 20kHz Operating voltage: 13.5...18.5/0...400V Mounting: THT Operating temperature: -40...125°C Topology: IGBT three-phase bridge; thermistor Case: PG-MDIP24 Kind of integrated circuit: 3-phase motor controller; IPM Output current: -15...15A Technology: ClPOS™ Mini; TRENCHSTOP™ Voltage class: 600V Integrated circuit features: integrated bootstrap functionality Power dissipation: 58.6W |
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IKCM20L60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -20...20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Voltage class: 600V Power dissipation: 29.2W |
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IKCM30F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Topology: IGBT three-phase bridge; thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: ClPOS™ Mini; TRENCHSTOP™ Case: PG-MDIP24 Output current: -20...20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V Frequency: 20kHz Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP Power dissipation: 30.3W |
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IRFH9310TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6 Kind of package: reel Drain-source voltage: -30V Drain current: -17A Type of transistor: P-MOSFET Power dissipation: 3.1W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: PQFN5X6 |
на замовлення 3600 шт: термін постачання 21-30 дні (днів) |
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IRF9317TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8 Case: SO8 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Drain current: -16A Drain-source voltage: -30V Technology: HEXFET® Kind of channel: enhanced Type of transistor: P-MOSFET |
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BSZ120P03NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Power dissipation: 52W Case: PG-TSDSON-8 Gate-source voltage: ±25V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhanced |
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BSZ086P03NS3EGATMA | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8 Technology: OptiMOS™ P3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 69W Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V Kind of channel: enhanced Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 8.6mΩ |
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BSZ086P03NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8 Technology: OptiMOS™ P3 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 52W Polarisation: unipolar Drain current: -40A Drain-source voltage: -30V Kind of channel: enhanced Type of transistor: P-MOSFET Gate-source voltage: ±25V On-state resistance: 8.6mΩ |
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ICE2PCS01GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Output current: -1.5...2A Frequency: 50...250kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -40...125°C Topology: boost Input voltage: 80...265V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V |
на замовлення 999 шт: термін постачання 21-30 дні (днів) |
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ICE2PCS05GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Output current: -1.5...2A Frequency: 20...250kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -40...125°C Topology: boost Input voltage: 85...265V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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BSZ0994NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.1W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 5.2nC Kind of channel: enhanced |
товар відсутній |
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IPB035N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.5mΩ |
товар відсутній |
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IRFB7437PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 250A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET |
на замовлення 269 шт: термін постачання 21-30 дні (днів) |
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IR21834SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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IR2183PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 180ns Turn-off time: 0.22µs |
товар відсутній |
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IRFR4620TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 144W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IHW30N120R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 165W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 235nC Kind of package: tube Turn-off time: 363ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товар відсутній |
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| IAUC60N06S5L073ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 168A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| IAUC60N06S5N074ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 168A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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IPA060N06NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Pulsed drain current: 224A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IPA060N06NXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 45A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IPP060N06NAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 107W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| BGS12P2L6E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz Type of integrated circuit: RF switch Case: TSLP-6-4 Mounting: SMD Application: telecommunication Supply voltage: 1.65...3.4V DC Output configuration: SPDT Bandwidth: 0.05...6GHz |
товар відсутній |
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IRF9Z24NPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -12A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: THT Gate charge: 12.7nC Kind of package: tube Kind of channel: enhanced |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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| IRF9Z24NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -8.5A Pulsed drain current: -48A Power dissipation: 45W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: SMD Kind of channel: enhanced |
товар відсутній |
| IFX1050GVIO |
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Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; 70mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
товар відсутній
| IFX91041EJV50 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 1.8A; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 1.8A
Case: PG-DSO-8-EP
Mounting: SMD
Frequency: 0.37MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 1.8A; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 1.8A
Case: PG-DSO-8-EP
Mounting: SMD
Frequency: 0.37MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
товар відсутній
| TLS810D1EJV50XUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 2.75...42V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; PG-DSO-8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 5V
Output current: 0.1A
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Input voltage: 2.75...42V
товар відсутній
| IFX27001TFV50ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD
Kind of package: reel; tape
Output voltage: 5V
Output current: 1A
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Input voltage: 0...40V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: DPAK
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD
Kind of package: reel; tape
Output voltage: 5V
Output current: 1A
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Input voltage: 0...40V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: DPAK
товар відсутній
| IR2301PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Supply voltage: 5...20V DC
Operating temperature: -40...125°C
Mounting: THT
Case: DIP8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 1W
Turn-on time: 220ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Supply voltage: 5...20V DC
Operating temperature: -40...125°C
Mounting: THT
Case: DIP8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 1W
Turn-on time: 220ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
товар відсутній
| IR2301SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 5...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 220ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: charge pump; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 5...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 220ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: charge pump; integrated bootstrap functionality
товар відсутній
| IR2304SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 220ns
Turn-off time: 0.22µs
Output current: -130...60mA
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 220ns
Turn-off time: 0.22µs
Output current: -130...60mA
Type of integrated circuit: driver
Number of channels: 2
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.57 грн |
| 5+ | 93.32 грн |
| 12+ | 75.68 грн |
| 32+ | 71.27 грн |
| IR2308SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 220ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 220ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
товар відсутній
| IRF8010PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.33 грн |
| 10+ | 77.89 грн |
| 13+ | 70.54 грн |
| 34+ | 66.87 грн |
| IRF8010STRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 260W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 260W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF8113TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 135A
Drain-source voltage: 30V
Drain current: 13.8A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 135A
Drain-source voltage: 30V
Drain current: 13.8A
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET
товар відсутній
| IRF8313TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.7A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9.7A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.7A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF8707TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9.1A
On-state resistance: 17.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 9.3nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 88A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.1A; Idm: 88A; 1.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9.1A
On-state resistance: 17.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 9.3nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 88A
Mounting: SMD
Case: SO8
товар відсутній
| IRFH8303TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB019N08N3G |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
товар відсутній
| IRFS7430TRL7PP |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Mounting: SMD
Gate charge: 305nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Mounting: SMD
Gate charge: 305nC
Kind of channel: enhanced
товар відсутній
| IRFH8311TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFS7440TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 208W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRLS3034TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| AUIRLS3034 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhanced
товар відсутній
| IRF7739L1TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC030P03NS3GAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Power dissipation: 125W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -100A
On-state resistance: 3mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Power dissipation: 125W
Case: PG-TDSON-8
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±25V
Drain-source voltage: -30V
Drain current: -100A
On-state resistance: 3mΩ
Type of transistor: P-MOSFET
на замовлення 3200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.71 грн |
| 10+ | 141.81 грн |
| 11+ | 82.3 грн |
| 29+ | 77.89 грн |
| BSC060P03NS3EGATMA |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: -30V
Drain current: -100A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±25V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 83W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: -30V
Drain current: -100A
On-state resistance: 6mΩ
Type of transistor: P-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±25V
товар відсутній
| IFCM20T65GDXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Frequency: 60kHz
Operating voltage: 13.5...16.5/0...450V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Kind of integrated circuit: 2-phase motor controller; IPM
Output current: 20A
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Voltage class: 650V
Kind of package: tube
Integrated circuit features: interleaved PFC
Power dissipation: 52.3W
Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Frequency: 60kHz
Operating voltage: 13.5...16.5/0...450V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Kind of integrated circuit: 2-phase motor controller; IPM
Output current: 20A
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Voltage class: 650V
Kind of package: tube
Integrated circuit features: interleaved PFC
Power dissipation: 52.3W
товар відсутній
| IFCM20U65GDXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IPM,3-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Frequency: 60kHz
Operating voltage: 13.5...16.5/0...450V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: 20A
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Voltage class: 650V
Kind of package: tube
Integrated circuit features: interleaved PFC
Power dissipation: 52.3W
Category: Motor and PWM drivers
Description: IC: driver; IPM,3-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Frequency: 60kHz
Operating voltage: 13.5...16.5/0...450V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: 20A
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Voltage class: 650V
Kind of package: tube
Integrated circuit features: interleaved PFC
Power dissipation: 52.3W
товар відсутній
| IFCM30T65GDXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 30A; 60kHz
Type of integrated circuit: driver
Frequency: 60kHz
Operating voltage: 13.5...16.5/0...450V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Kind of integrated circuit: 2-phase motor controller; IPM
Output current: 30A
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Voltage class: 650V
Kind of package: tube
Integrated circuit features: interleaved PFC
Power dissipation: 60.4W
Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 30A; 60kHz
Type of integrated circuit: driver
Frequency: 60kHz
Operating voltage: 13.5...16.5/0...450V
Mounting: THT
Operating temperature: -40...125°C
Case: PG-MDIP24
Kind of integrated circuit: 2-phase motor controller; IPM
Output current: 30A
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Voltage class: 650V
Kind of package: tube
Integrated circuit features: interleaved PFC
Power dissipation: 60.4W
товар відсутній
| IGCM04G60HAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 803.97 грн |
| 2+ | 570.93 грн |
| 5+ | 540.07 грн |
| IFCM30U65GDXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 30A
Type of integrated circuit: driver
Frequency: 60kHz
Operating voltage: 13.5...16.5/0...450V
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge; thermistor
Case: PG-MDIP24
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: 30A
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Voltage class: 650V
Kind of package: tube
Integrated circuit features: interleaved PFC
Power dissipation: 60.4W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 30A
Type of integrated circuit: driver
Frequency: 60kHz
Operating voltage: 13.5...16.5/0...450V
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge; thermistor
Case: PG-MDIP24
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: 30A
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Voltage class: 650V
Kind of package: tube
Integrated circuit features: interleaved PFC
Power dissipation: 60.4W
товар відсутній
| IGCM04F60GAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -4÷4A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
на замовлення 247 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 803.97 грн |
| 2+ | 570.19 грн |
| 5+ | 539.33 грн |
| IGCM06F60GAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -6...6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 23.6W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -6...6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 23.6W
товар відсутній
| IGCM10F60GAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 954.31 грн |
| 2+ | 678.2 грн |
| 4+ | 641.47 грн |
| 5+ | 640.73 грн |
| IGCM20F60GAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
товар відсутній
| IKCM10H60GAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 23.1W
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1007.33 грн |
| 2+ | 717.88 грн |
| 4+ | 678.94 грн |
| 5+ | 678.2 грн |
| IKCM10L60GAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
товар відсутній
| IKCM15H60GAXKMA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 788.93 грн |
| 2+ | 555.5 грн |
| 5+ | 525.37 грн |
| IKCM15L60GDXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge; thermistor
Case: PG-MDIP24
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: -15...15A
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Power dissipation: 58.6W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V
Mounting: THT
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge; thermistor
Case: PG-MDIP24
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: -15...15A
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Power dissipation: 58.6W
товар відсутній
| IKCM20L60GAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 29.2W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 29.2W
товар відсутній
| IKCM30F60GAXKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -20...20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V
Frequency: 20kHz
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 30.3W
товар відсутній
| IRFH9310TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Kind of package: reel
Drain-source voltage: -30V
Drain current: -17A
Type of transistor: P-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN5X6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Kind of package: reel
Drain-source voltage: -30V
Drain current: -17A
Type of transistor: P-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN5X6
на замовлення 3600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.42 грн |
| 15+ | 60.99 грн |
| 39+ | 57.31 грн |
| 100+ | 56.58 грн |
| IRF9317TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: -16A
Drain-source voltage: -30V
Technology: HEXFET®
Kind of channel: enhanced
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: -16A
Drain-source voltage: -30V
Technology: HEXFET®
Kind of channel: enhanced
Type of transistor: P-MOSFET
товар відсутній
| BSZ120P03NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSZ086P03NS3EGATMA |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 69W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 69W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
товар відсутній
| BSZ086P03NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8
Technology: OptiMOS™ P3
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 52W
Polarisation: unipolar
Drain current: -40A
Drain-source voltage: -30V
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
On-state resistance: 8.6mΩ
товар відсутній
| ICE2PCS01GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
на замовлення 999 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.56 грн |
| 13+ | 67.6 грн |
| 35+ | 63.93 грн |
| 500+ | 61.72 грн |
| ICE2PCS05GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 20...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 85...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.49 грн |
| 5+ | 100.67 грн |
| BSZ0994NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.1W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.1W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.1W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of channel: enhanced
товар відсутній
| IPB035N08N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.5mΩ
товар відсутній
| IRFB7437PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
на замовлення 269 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.09 грн |
| 10+ | 69.8 грн |
| 15+ | 60.99 грн |
| 39+ | 58.05 грн |
| IR21834SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.75 грн |
| 3+ | 228.52 грн |
| 5+ | 199.13 грн |
| 12+ | 188.1 грн |
| IR2183PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
товар відсутній
| IRFR4620TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IHW30N120R5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 363ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 363ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| IAUC60N06S5L073ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 22.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC60N06S5N074ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 168A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IPA060N06NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 224A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 224A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPA060N06NXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP060N06NAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BGS12P2L6E6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Case: TSLP-6-4
Mounting: SMD
Application: telecommunication
Supply voltage: 1.65...3.4V DC
Output configuration: SPDT
Bandwidth: 0.05...6GHz
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Case: TSLP-6-4
Mounting: SMD
Application: telecommunication
Supply voltage: 1.65...3.4V DC
Output configuration: SPDT
Bandwidth: 0.05...6GHz
товар відсутній
| IRF9Z24NPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 48.27 грн |
| 10+ | 40.71 грн |
| 39+ | 22.19 грн |
| IRF9Z24NSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній