Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136447) > Сторінка 2227 з 2275
| Фото | Назва | Виробник | Інформація |
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IRS2004PBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 1W Mounting: THT Supply voltage: 10...20V DC Number of channels: 2 Case: DIP8 Operating temperature: -40...125°C Kind of package: tube Output current: -600...290mA Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 750ns Turn-off time: 180ns |
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IRS2005SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 160ns Turn-off time: 150ns |
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IRS2005STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 625mW Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Operating temperature: -40...125°C Kind of package: reel; tape Output current: -600...290mA Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 160ns Turn-off time: 150ns |
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IRS2007SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 625mW Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Operating temperature: -40...125°C Kind of package: tube Output current: -600...290mA Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 160ns Turn-off time: 150ns |
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IRS2008SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Supply voltage: 10...20V DC Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Topology: MOSFET half-bridge Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Output current: -600...290mA Kind of package: tube Voltage class: 200V Power: 625mW Turn-on time: 750ns Turn-off time: 180ns |
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IRS2011PBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 1W Mounting: THT Supply voltage: 10...20V DC Number of channels: 2 Case: DIP8 Operating temperature: -40...125°C Kind of package: tube Output current: -1...1A Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 85ns Turn-off time: 75ns |
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| IRS2093MTRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 4 Amplifier class: D Case: MLPQ48 Kind of package: reel; tape |
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IRF7343TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55/-55V Drain current: 4.7/-3.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/105mΩ Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7343QTR | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55/-55V Drain current: 4.7/-3.4A Power dissipation: 4.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 43/95mΩ Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7342TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -3.4A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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AUIRF7342QTR | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -3.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 26nC Kind of channel: enhanced |
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IGU04N60TAKMA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 4A; 42W; TO251 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 42W Case: TO251 Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: THT Gate charge: 27nC Kind of package: tube Turn-on time: 21ns Turn-off time: 207ns |
на замовлення 1094 шт: термін постачання 21-30 дні (днів) |
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IKD04N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Turn-on time: 22ns Turn-off time: 317ns Features of semiconductor devices: integrated anti-parallel diode |
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IKD04N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
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IKP04N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 42W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: THT Gate charge: 27nC Kind of package: tube Turn-on time: 21ns Turn-off time: 207ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 324 шт: термін постачання 21-30 дні (днів) |
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IRLR3110ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 1433 шт: термін постачання 21-30 дні (днів) |
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BAS12504WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT323; 250mW Mounting: SMD Case: SOT323 Power dissipation: 0.25W Type of diode: Schottky switching Max. off-state voltage: 25V Load current: 0.1A Semiconductor structure: double series Max. forward impulse current: 0.5A |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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BAS12507WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT343; 250mW Mounting: SMD Case: SOT343 Power dissipation: 0.25W Type of diode: Schottky switching Max. off-state voltage: 25V Load current: 0.1A Semiconductor structure: double independent Max. forward impulse current: 0.5A |
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FP40R12KE3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: AG-ECONO2-5 Application: frequency changer; Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Power dissipation: 200W Technology: EconoPIM™ 2 Mechanical mounting: screw |
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XMC4300F100F256AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; SPI; UART Memory: 128kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-100 Operating temperature: -40...85°C Number of inputs/outputs: 75 Family: XMC4300 Number of A/D channels: 14 Number of 16bit timers: 12 Kind of architecture: Cortex M4 |
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XMC4300F100K256AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; SPI; UART Memory: 128kB SRAM; 256kB FLASH Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog Supply voltage: 3.3V DC Case: PG-LQFP-100 Operating temperature: -40...125°C Number of inputs/outputs: 75 Family: XMC4300 Number of A/D channels: 14 Number of 16bit timers: 12 Kind of architecture: Cortex M4 |
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TLE49462KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT Mounting: SMT Case: SC59 Operating temperature: -40...150°C Range of detectable magnetic field: -3.5...3.5mT Supply voltage: 2.7...18V DC Kind of sensor: latch Type of sensor: Hall |
на замовлення 2857 шт: термін постачання 21-30 дні (днів) |
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| TLE4946KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT Mounting: SMT Case: SC59 Operating temperature: -40...150°C Range of detectable magnetic field: -19...19mT Supply voltage: 2.7...18V DC Kind of sensor: latch Type of sensor: Hall |
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IRLR120NTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IGB15N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube |
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IGW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
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IGW75N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
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IKA15N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 10.6A Power dissipation: 35.7W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 28ns Turn-off time: 238ns Features of semiconductor devices: integrated anti-parallel diode |
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IKB15N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 23A Power dissipation: 130W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Turn-on time: 28ns Turn-off time: 238ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 845 шт: термін постачання 21-30 дні (днів) |
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IKD15N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 26ns Turn-off time: 319ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 2052 шт: термін постачання 21-30 дні (днів) |
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IKD15N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 28ns Turn-off time: 177ns Features of semiconductor devices: integrated anti-parallel diode |
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IKP15N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 130W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 87nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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IKW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 85ns Turn-off time: 332ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IPB042N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhanced |
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| FS100R12W2T7B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPACK™ 2B Topology: IGBT three-phase bridge; NTC thermistor Case: AG-EASY2B-2 |
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BSS159NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Technology: SIPMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.36W Polarisation: unipolar Kind of channel: depleted Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 8Ω Type of transistor: N-MOSFET |
на замовлення 2660 шт: термін постачання 21-30 дні (днів) |
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IRFR3806TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 43A Power dissipation: 71W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 1263 шт: термін постачання 21-30 дні (днів) |
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BFS17PE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 25mA Power dissipation: 0.28W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 2.5GHz |
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AUIR3241STR | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V Type of integrated circuit: driver Mounting: SMD Number of channels: 1 Case: SO8 Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: high-side; MOSFET gate driver Voltage class: 40V Power: 625mW Supply voltage: 3...36V DC |
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SN7002NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.36W Drain-source voltage: 60V Drain current: 0.2A On-state resistance: 5Ω Type of transistor: N-MOSFET Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IRFU9024NPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK Mounting: THT Power dissipation: 38W Polarisation: unipolar Gate charge: 12.7nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: IPAK Drain-source voltage: -55V Drain current: -11A On-state resistance: 0.175Ω Type of transistor: P-MOSFET |
на замовлення 1332 шт: термін постачання 21-30 дні (днів) |
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IRF7314TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -5.3A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.3A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BAS28E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: double independent Features of semiconductor devices: ultrafast switching Case: SOT143 Power dissipation: 0.33W Kind of package: reel; tape |
на замовлення 2275 шт: термін постачання 21-30 дні (днів) |
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BAV170E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Case: SOT23 Kind of package: reel; tape Power dissipation: 0.25W |
на замовлення 2790 шт: термін постачання 21-30 дні (днів) |
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BAV199E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; SOT23; 330mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Semiconductor structure: double series Features of semiconductor devices: fast switching Case: SOT23 Power dissipation: 0.33W Kind of package: reel; tape |
на замовлення 3215 шт: термін постачання 21-30 дні (днів) |
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BSS126H6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depleted Gate-source voltage: ±20V On-state resistance: 700Ω Type of transistor: N-MOSFET Drain current: 0.021A Power dissipation: 0.5W Drain-source voltage: 600V |
на замовлення 2540 шт: термін постачання 21-30 дні (днів) |
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ICE3BR4765JGXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.32A Frequency: 65kHz Number of channels: 1 Case: PG-DSO-12 Mounting: SMD Operating temperature: -40...150°C Topology: flyback Input voltage: 80...265V Breakdown voltage: 650V Duty cycle factor: 0...80% Power: 24/16.5W Application: SMPS Operating voltage: 10.5...25V |
на замовлення 2228 шт: термін постачання 21-30 дні (днів) |
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ICE3PCS01G | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; Uin: 90÷270V Type of integrated circuit: PMIC Topology: boost Kind of integrated circuit: PFC controller Case: PG-DSO-14 Mounting: SMD Operating temperature: -25...125°C Application: SMPS Input voltage: 90...270V Operating voltage: 11...25V Frequency: 21...100kHz Duty cycle factor: 0...98.5% |
на замовлення 2491 шт: термін постачання 21-30 дні (днів) |
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ICE3PCS02GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; Uin: 90÷270V Type of integrated circuit: PMIC Topology: boost Kind of integrated circuit: PFC controller Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Application: SMPS Input voltage: 90...270V Operating voltage: 11...25V Frequency: 21...100kHz Duty cycle factor: 0...98.5% |
товар відсутній |
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ICE3PCS03GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; Uin: 90÷270V Type of integrated circuit: PMIC Topology: boost Kind of integrated circuit: PFC controller Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Application: SMPS Input voltage: 90...270V Operating voltage: 11...25V Frequency: 21...100kHz Duty cycle factor: 0...98.5% |
товар відсутній |
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IR2103STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
на замовлення 295 шт: термін постачання 21-30 дні (днів) |
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IRFR3607TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IRFS3607TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IRFU3607PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: IPAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 56nC Kind of channel: enhanced |
товар відсутній |
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IRF5801TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.6A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 179 шт: термін постачання 21-30 дні (днів) |
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AUIRF1324S-7P | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 429A Power dissipation: 300W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhanced |
товар відсутній |
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IRFH5302DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 29A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
товар відсутній |
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| BFP420FH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.5V Collector current: 60mA Power dissipation: 0.21W Case: TSFP-4 Current gain: 60...130 Mounting: SMD Kind of package: reel; tape Frequency: 25GHz |
товар відсутній |
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BFP420H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.5V Collector current: 60mA Power dissipation: 0.21W Case: SOT343 Current gain: 60...130 Mounting: SMD Kind of package: reel; tape Frequency: 25GHz |
на замовлення 5391 шт: термін постачання 21-30 дні (днів) |
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IRFP4368PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 350A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 380nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| IRS2004PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 1W
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 1W
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
товар відсутній
| IRS2005SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
товар відсутній
| IRS2005STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
товар відсутній
| IRS2007SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 625mW
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -600...290mA
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
товар відсутній
| IRS2008SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Supply voltage: 10...20V DC
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Output current: -600...290mA
Kind of package: tube
Voltage class: 200V
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Supply voltage: 10...20V DC
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Output current: -600...290mA
Kind of package: tube
Voltage class: 200V
Power: 625mW
Turn-on time: 750ns
Turn-off time: 180ns
товар відсутній
| IRS2011PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 1W
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -1...1A
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 85ns
Turn-off time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Power: 1W
Mounting: THT
Supply voltage: 10...20V DC
Number of channels: 2
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -1...1A
Topology: MOSFET half-bridge
Voltage class: 200V
Turn-on time: 85ns
Turn-off time: 75ns
товар відсутній
| IRS2093MTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
товар відсутній
| IRF7343TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7343QTR |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7342TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.89 грн |
| 10+ | 46.88 грн |
| 31+ | 28.41 грн |
| 84+ | 26.86 грн |
| 8000+ | 26.6 грн |
| AUIRF7342QTR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 26nC
Kind of channel: enhanced
товар відсутній
| IGU04N60TAKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 42W
Case: TO251
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 207ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO251
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 42W
Case: TO251
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 207ns
на замовлення 1094 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.01 грн |
| 10+ | 55.84 грн |
| 22+ | 40.12 грн |
| 60+ | 37.91 грн |
| IKD04N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKD04N60RFATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKP04N60TXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 42W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 207ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 42W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 207ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 324 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.7 грн |
| 10+ | 74.95 грн |
| 14+ | 66.13 грн |
| 37+ | 62.46 грн |
| 50+ | 59.52 грн |
| IRLR3110ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 1433 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.66 грн |
| 10+ | 80.83 грн |
| 16+ | 56.58 грн |
| 43+ | 53.64 грн |
| BAS12504WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT323; 250mW
Mounting: SMD
Case: SOT323
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT323; 250mW
Mounting: SMD
Case: SOT323
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.5A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.56 грн |
| 53+ | 16.53 грн |
| 144+ | 15.65 грн |
| 3000+ | 15.28 грн |
| BAS12507WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT343; 250mW
Mounting: SMD
Case: SOT343
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 25V; 0.1A; SOT343; 250mW
Mounting: SMD
Case: SOT343
Power dissipation: 0.25W
Type of diode: Schottky switching
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
товар відсутній
| FP40R12KE3 | |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 200W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 200W
Technology: EconoPIM™ 2
Mechanical mounting: screw
товар відсутній
| XMC4300F100F256AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Memory: 128kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 75
Family: XMC4300
Number of A/D channels: 14
Number of 16bit timers: 12
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Memory: 128kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...85°C
Number of inputs/outputs: 75
Family: XMC4300
Number of A/D channels: 14
Number of 16bit timers: 12
Kind of architecture: Cortex M4
товар відсутній
| XMC4300F100K256AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Memory: 128kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...125°C
Number of inputs/outputs: 75
Family: XMC4300
Number of A/D channels: 14
Number of 16bit timers: 12
Kind of architecture: Cortex M4
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,256kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; SPI; UART
Memory: 128kB SRAM; 256kB FLASH
Integrated circuit features: clock gaiting; DSP; EEPROM emulation; RTC; watchdog
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Operating temperature: -40...125°C
Number of inputs/outputs: 75
Family: XMC4300
Number of A/D channels: 14
Number of 16bit timers: 12
Kind of architecture: Cortex M4
товар відсутній
| TLE49462KHTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Case: SC59
Operating temperature: -40...150°C
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Kind of sensor: latch
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -3.5÷3.5mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Case: SC59
Operating temperature: -40...150°C
Range of detectable magnetic field: -3.5...3.5mT
Supply voltage: 2.7...18V DC
Kind of sensor: latch
Type of sensor: Hall
на замовлення 2857 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 70.43 грн |
| 10+ | 48.13 грн |
| 32+ | 27.92 грн |
| 87+ | 25.72 грн |
| TLE4946KHTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Case: SC59
Operating temperature: -40...150°C
Range of detectable magnetic field: -19...19mT
Supply voltage: 2.7...18V DC
Kind of sensor: latch
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Case: SC59
Operating temperature: -40...150°C
Range of detectable magnetic field: -19...19mT
Supply voltage: 2.7...18V DC
Kind of sensor: latch
Type of sensor: Hall
товар відсутній
| IRLR120NTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IGB15N60TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
товар відсутній
| IGW75N60H3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
товар відсутній
| IGW75N60TFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
товар відсутній
| IKA15N60TXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 10.6A
Power dissipation: 35.7W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 10.6A
Power dissipation: 35.7W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKB15N60TATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 23A
Power dissipation: 130W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 238ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 845 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.57 грн |
| 5+ | 169 грн |
| 7+ | 135.2 грн |
| 18+ | 127.12 грн |
| IKD15N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 2052 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 109.2 грн |
| 10+ | 86.7 грн |
| 11+ | 79.36 грн |
| 30+ | 75.68 грн |
| 50+ | 73.48 грн |
| 100+ | 72.74 грн |
| IKD15N60RFATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| IKP15N60TXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.47 грн |
| 10+ | 108.01 грн |
| 11+ | 83.03 грн |
| 29+ | 78.62 грн |
| IKW75N60H3FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 703.47 грн |
| 2+ | 501.12 грн |
| 5+ | 473.2 грн |
| IPB042N10N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| FS100R12W2T7B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPACK™ 2B
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-EASY2B-2
товар відсутній
| BSS159NH6327XTSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Technology: SIPMOS™
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Polarisation: unipolar
Kind of channel: depleted
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Technology: SIPMOS™
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Polarisation: unipolar
Kind of channel: depleted
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
на замовлення 2660 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22 грн |
| 25+ | 17.56 грн |
| 70+ | 12.23 грн |
| 195+ | 11.57 грн |
| IRFR3806TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 1263 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.26 грн |
| 9+ | 43.5 грн |
| 25+ | 38.5 грн |
| 26+ | 33.76 грн |
| 71+ | 31.92 грн |
| BFS17PE6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 25mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 25mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 25mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2.5GHz
товар відсутній
| AUIR3241STR |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Voltage class: 40V
Power: 625mW
Supply voltage: 3...36V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Voltage class: 40V
Power: 625mW
Supply voltage: 3...36V DC
товар відсутній
| SN7002NH6327XTSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IRFU9024NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Mounting: THT
Power dissipation: 38W
Polarisation: unipolar
Gate charge: 12.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
Drain-source voltage: -55V
Drain current: -11A
On-state resistance: 0.175Ω
Type of transistor: P-MOSFET
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Mounting: THT
Power dissipation: 38W
Polarisation: unipolar
Gate charge: 12.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
Drain-source voltage: -55V
Drain current: -11A
On-state resistance: 0.175Ω
Type of transistor: P-MOSFET
на замовлення 1332 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.01 грн |
| 12+ | 33.36 грн |
| 25+ | 27.19 грн |
| 38+ | 22.7 грн |
| 104+ | 21.46 грн |
| IRF7314TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BAS28E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Power dissipation: 0.33W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT143; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Power dissipation: 0.33W
Kind of package: reel; tape
на замовлення 2275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.45 грн |
| 55+ | 7.27 грн |
| 100+ | 6.39 грн |
| 155+ | 5.58 грн |
| 425+ | 5.29 грн |
| BAV170E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.25W
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.25W
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 10.6 грн |
| 88+ | 4.18 грн |
| 250+ | 3.76 грн |
| 308+ | 2.77 грн |
| 846+ | 2.62 грн |
| BAV199E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; SOT23; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT23
Power dissipation: 0.33W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; SOT23; 330mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT23
Power dissipation: 0.33W
Kind of package: reel; tape
на замовлення 3215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 18.2 грн |
| 32+ | 11.76 грн |
| 50+ | 7.54 грн |
| 100+ | 6.19 грн |
| 300+ | 2.88 грн |
| 825+ | 2.73 грн |
| BSS126H6327XTSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depleted
Gate-source voltage: ±20V
On-state resistance: 700Ω
Type of transistor: N-MOSFET
Drain current: 0.021A
Power dissipation: 0.5W
Drain-source voltage: 600V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depleted
Gate-source voltage: ±20V
On-state resistance: 700Ω
Type of transistor: N-MOSFET
Drain current: 0.021A
Power dissipation: 0.5W
Drain-source voltage: 600V
на замовлення 2540 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.86 грн |
| 50+ | 20.57 грн |
| 64+ | 13.3 грн |
| 176+ | 12.56 грн |
| ICE3BR4765JGXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.32A
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V
на замовлення 2228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.29 грн |
| 5+ | 87.44 грн |
| 12+ | 77.89 грн |
| 31+ | 73.48 грн |
| 500+ | 70.54 грн |
| ICE3PCS01G |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; Uin: 90÷270V
Type of integrated circuit: PMIC
Topology: boost
Kind of integrated circuit: PFC controller
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Input voltage: 90...270V
Operating voltage: 11...25V
Frequency: 21...100kHz
Duty cycle factor: 0...98.5%
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; Uin: 90÷270V
Type of integrated circuit: PMIC
Topology: boost
Kind of integrated circuit: PFC controller
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Input voltage: 90...270V
Operating voltage: 11...25V
Frequency: 21...100kHz
Duty cycle factor: 0...98.5%
на замовлення 2491 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 130.57 грн |
| 5+ | 105.81 грн |
| 10+ | 92.58 грн |
| 26+ | 87.44 грн |
| 500+ | 84.5 грн |
| ICE3PCS02GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; Uin: 90÷270V
Type of integrated circuit: PMIC
Topology: boost
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Input voltage: 90...270V
Operating voltage: 11...25V
Frequency: 21...100kHz
Duty cycle factor: 0...98.5%
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; Uin: 90÷270V
Type of integrated circuit: PMIC
Topology: boost
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Input voltage: 90...270V
Operating voltage: 11...25V
Frequency: 21...100kHz
Duty cycle factor: 0...98.5%
товар відсутній
| ICE3PCS03GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; Uin: 90÷270V
Type of integrated circuit: PMIC
Topology: boost
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Input voltage: 90...270V
Operating voltage: 11...25V
Frequency: 21...100kHz
Duty cycle factor: 0...98.5%
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; Uin: 90÷270V
Type of integrated circuit: PMIC
Topology: boost
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Input voltage: 90...270V
Operating voltage: 11...25V
Frequency: 21...100kHz
Duty cycle factor: 0...98.5%
товар відсутній
| IR2103STRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
на замовлення 295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.5 грн |
| 5+ | 83.77 грн |
| 12+ | 72.01 грн |
| 33+ | 68.33 грн |
| 100+ | 67.6 грн |
| IRFR3607TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFS3607TRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFU3607PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of channel: enhanced
товар відсутній
| IRF5801TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 31.65 грн |
| 50+ | 21.6 грн |
| 68+ | 12.8 грн |
| AUIRF1324S-7P |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhanced
товар відсутній
| IRFH5302DTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 29A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 29A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
товар відсутній
| BFP420FH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
товар відсутній
| BFP420H6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
на замовлення 5391 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 31.65 грн |
| 25+ | 26.38 грн |
| 41+ | 21.24 грн |
| 100+ | 20.94 грн |
| 112+ | 20.06 грн |
| 500+ | 19.55 грн |
| 1000+ | 19.32 грн |
| IRFP4368PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній