Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136445) > Сторінка 2224 з 2275

Обрати Сторінку:   [  << Попередня Сторінка ]  1 227 454 681 908 1135 1362 1589 1816 2043 2219 2220 2221 2222 2223 2224 2225 2226 2227 2228 2229 2270 2275  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES BSS225H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 45Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 545 шт:
термін постачання 21-30 дні (днів)
11+37.19 грн
12+ 31.15 грн
49+ 17.71 грн
135+ 16.75 грн
500+ 16.61 грн
Мінімальне замовлення: 11
BSS315PH6327XTSA1 BSS315PH6327XTSA1 INFINEON TECHNOLOGIES BSS315PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: PG-SOT23
на замовлення 5088 шт:
термін постачання 21-30 дні (днів)
15+27.7 грн
20+ 18.81 грн
50+ 11.39 грн
100+ 9.92 грн
159+ 5.44 грн
435+ 5.14 грн
Мінімальне замовлення: 15
BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES BSD235NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Mounting: SMD
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT363
Drain-source voltage: 20V
Drain current: 0.95A
On-state resistance: 0.35Ω
на замовлення 4030 шт:
термін постачання 21-30 дні (днів)
43+9.42 грн
100+ 7.72 грн
135+ 6.36 грн
371+ 6.02 грн
Мінімальне замовлення: 43
BSD840NH6327XTSA1 BSD840NH6327XTSA1 INFINEON TECHNOLOGIES BSD840NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Mounting: SMD
Case: SOT363
Power dissipation: 0.5W
Technology: OptiMOS™ 2
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.88A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET x2
на замовлення 7320 шт:
термін постачання 21-30 дні (днів)
50+7.91 грн
100+ 6.61 грн
168+ 5.07 грн
461+ 4.78 грн
Мінімальне замовлення: 50
BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES BSS214NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 2375 шт:
термін постачання 21-30 дні (днів)
18+22.95 грн
27+ 13.96 грн
50+ 8.58 грн
100+ 7.6 грн
193+ 4.47 грн
531+ 4.23 грн
Мінімальне замовлення: 18
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 INFINEON TECHNOLOGIES BSL307SPH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 INFINEON TECHNOLOGIES BSS214NWH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 4510 шт:
термін постачання 21-30 дні (днів)
53+7.52 грн
100+ 5.36 грн
200+ 4.34 грн
549+ 4.11 грн
Мінімальне замовлення: 53
BSP324H6327XTSA1 BSP324H6327XTSA1 INFINEON TECHNOLOGIES BSP324H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
11+37.19 грн
25+ 30.71 грн
36+ 23.73 грн
99+ 22.48 грн
Мінімальне замовлення: 11
IRL2505PBF IRL2505PBF INFINEON TECHNOLOGIES irl2505pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
3+144.81 грн
10+ 114.63 грн
11+ 78.62 грн
31+ 74.21 грн
Мінімальне замовлення: 3
IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES IRF7201TRPBF.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES irf7205pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 2863 шт:
термін постачання 21-30 дні (днів)
9+48.27 грн
49+ 17.71 грн
135+ 16.75 грн
Мінімальне замовлення: 9
IPD50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Case: PG-TO252-3-11
Type of transistor: N-MOSFET
Power dissipation: 100W
Drain current: 38A
Polarisation: unipolar
Drain-source voltage: 100V
On-state resistance: 15mΩ
Mounting: SMD
Technology: OptiMOS® -T
товар відсутній
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 INFINEON TECHNOLOGIES BSZ150N10LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPA050N10NM5SXKSA1 IPA050N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 264A
Kind of package: tube
Mounting: THT
Case: TO220FP
товар відсутній
IAUT150N10S5N035ATMA1 IAUT150N10S5N035ATMA1 INFINEON TECHNOLOGIES IAUT150N10S5N035.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
T700N22TOFXPSA1 INFINEON TECHNOLOGIES Infineon-T700N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b084825402e Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 1.5kA; 700A; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 1.5kA
Load current: 700A
Gate current: 250mA
Case: BG-T5726K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 13.5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
IR2175SPBF IR2175SPBF INFINEON TECHNOLOGIES IR2175SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
товар відсутній
DD350N12K  DD350N12K  INFINEON TECHNOLOGIES Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 350A; BG-PB50-1; Ifsm: 13kA
Case: BG-PB50-1
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 350A
Max. forward voltage: 1.28V
Max. forward impulse current: 13kA
товар відсутній
DD350N14K  DD350N14K  INFINEON TECHNOLOGIES Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 350A; BG-PB50-1; Ifsm: 13kA
Case: BG-PB50-1
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 350A
Max. forward voltage: 1.28V
Max. forward impulse current: 13kA
товар відсутній
DD350N18K  DD350N18K  INFINEON TECHNOLOGIES Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 350A; BG-PB50-1; Ifsm: 13kA
Case: BG-PB50-1
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 350A
Max. forward voltage: 1.28V
Max. forward impulse current: 13kA
товар відсутній
DD340N16SHPSA1 INFINEON TECHNOLOGIES DD340N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
DD340N22SHPSA1 INFINEON TECHNOLOGIES DD340N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
DD350N16K  DD350N16K  INFINEON TECHNOLOGIES DD350N18K.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 350A; BG-PB50-1; Ifsm: 13kA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.28V
Load current: 350A
Semiconductor structure: double series
Max. forward impulse current: 13kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
товар відсутній
IGW40N120H3FKSA1 IGW40N120H3FKSA1 INFINEON TECHNOLOGIES IGW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
на замовлення 168 шт:
термін постачання 21-30 дні (днів)
1+596.64 грн
3+ 425.44 грн
6+ 401.93 грн
IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES IHW40N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
2+274.58 грн
5+ 185.9 грн
13+ 176.35 грн
120+ 169 грн
Мінімальне замовлення: 2
IKQ40N120CH3XKSA1 IKQ40N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ40N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 133W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKW40N120CS6XKSA1 IKW40N120CS6XKSA1 INFINEON TECHNOLOGIES IKW40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+568.16 грн
3+ 364.45 грн
IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES IKW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+655.99 грн
2+ 468.06 грн
3+ 467.32 грн
6+ 442.34 грн
IKY40N120CH3XKSA1 INFINEON TECHNOLOGIES IKY40N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKY40N120CS6XKSA1 INFINEON TECHNOLOGIES IKY40N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IM240-M6Z1B IM240-M6Z1B INFINEON TECHNOLOGIES Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; ClPOS™ Micro
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro
Case: SOP23
Output current: 4A
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 12.5...17.5/0...450V
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 8.9W
товар відсутній
IM240-S6Y1B INFINEON TECHNOLOGIES Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; ClPOS™ Micro
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro
Case: DIP23
Output current: 3A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 12.5...17.5/0...450V
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 8.4W
товар відсутній
IM240-S6Z1B IM240-S6Z1B INFINEON TECHNOLOGIES Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; ClPOS™ Micro
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro
Case: SOP23
Output current: 3A
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 12.5...17.5/0...450V
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 8.4W
товар відсутній
XMC750 WATT MOTOR CONTROL KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
товар відсутній
XMC DIGITAL POWER EXPLORER KIT INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
товар відсутній
IPD90N03S4L02ATMA1 IPD90N03S4L02ATMA1 INFINEON TECHNOLOGIES IPD90N03S4L02.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 2.2mΩ
Drain current: 90A
Gate charge: 110nC
Drain-source voltage: 30V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TO252-3
Mounting: SMD
товар відсутній
BSC090N03LSGATMA1 BSC090N03LSGATMA1 INFINEON TECHNOLOGIES BSC090N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD090N03LGATMA1 IPD090N03LGATMA1 INFINEON TECHNOLOGIES IPD090N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Power dissipation: 42W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 9mΩ
на замовлення 2482 шт:
термін постачання 21-30 дні (днів)
8+51.43 грн
35+ 25.28 грн
94+ 23.88 грн
500+ 23.07 грн
Мінімальне замовлення: 8
IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES irl2203nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
PVT422PBF PVT422PBF INFINEON TECHNOLOGIES pvt422.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Relay series: PVT422PbF
товар відсутній
PVT422SPBF PVT422SPBF INFINEON TECHNOLOGIES pvt422.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Relay series: PVT422PbF
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+917.12 грн
2+ 476.14 грн
5+ 449.69 грн
IRF8301MTRPBF IRF8301MTRPBF INFINEON TECHNOLOGIES IRF8301MTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 192A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 192A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IGB20N65S5ATMA1 IGB20N65S5ATMA1 INFINEON TECHNOLOGIES IGB20N65S5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 28A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 137ns
товар відсутній
IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES IHW20N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-off time: 257ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES IKB20N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 183ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 957 шт:
термін постачання 21-30 дні (днів)
2+250.84 грн
5+ 210.15 грн
6+ 160.92 грн
15+ 152.1 грн
Мінімальне замовлення: 2
IRFH5004TRPBF IRFH5004TRPBF INFINEON TECHNOLOGIES irfh5004pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFH5006TRPBF IRFH5006TRPBF INFINEON TECHNOLOGIES irfh5006pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 250W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Drain-source voltage: 60V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
товар відсутній
IRFH5007TRPBF IRFH5007TRPBF INFINEON TECHNOLOGIES irfh5007pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Drain-source voltage: 75V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
товар відсутній
IR4426PBF IR4426PBF INFINEON TECHNOLOGIES IR4426PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
2+212.86 грн
3+ 177.82 грн
Мінімальне замовлення: 2
IPD110N12N3GATMA1 INFINEON TECHNOLOGIES dgdl?fileId=db3a30432239cccd0122a7a49e2b7d1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Drain-source voltage: 120V
Drain current: 54A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
товар відсутній
SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES SPD50N03S207G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 1482 шт:
термін постачання 21-30 дні (днів)
7+61.72 грн
8+ 51.43 грн
18+ 48.71 грн
49+ 46.05 грн
100+ 44.82 грн
500+ 44.09 грн
Мінімальне замовлення: 7
BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES BSC050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES BSC050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES BSZ050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES BSZ050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Power dissipation: 68W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
на замовлення 2347 шт:
термін постачання 21-30 дні (днів)
7+59.35 грн
9+ 41.88 грн
25+ 36.96 грн
27+ 32.11 грн
75+ 30.35 грн
500+ 29.91 грн
Мінімальне замовлення: 7
IRF7749L1TRPBF IRF7749L1TRPBF INFINEON TECHNOLOGIES IRF7749L1TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSS225H6327FTSA1 BSS225H6327FTSA1.pdf
BSS225H6327FTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 45Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 545 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
11+37.19 грн
12+ 31.15 грн
49+ 17.71 грн
135+ 16.75 грн
500+ 16.61 грн
Мінімальне замовлення: 11
BSS315PH6327XTSA1 BSS315PH6327XTSA1-dte.pdf
BSS315PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Case: PG-SOT23
на замовлення 5088 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
15+27.7 грн
20+ 18.81 грн
50+ 11.39 грн
100+ 9.92 грн
159+ 5.44 грн
435+ 5.14 грн
Мінімальне замовлення: 15
BSD235NH6327XTSA1 BSD235NH6327XTSA1.pdf
BSD235NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Mounting: SMD
Type of transistor: N-MOSFET x2
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: SOT363
Drain-source voltage: 20V
Drain current: 0.95A
On-state resistance: 0.35Ω
на замовлення 4030 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
43+9.42 грн
100+ 7.72 грн
135+ 6.36 грн
371+ 6.02 грн
Мінімальне замовлення: 43
BSD840NH6327XTSA1 BSD840NH6327XTSA1.pdf
BSD840NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Mounting: SMD
Case: SOT363
Power dissipation: 0.5W
Technology: OptiMOS™ 2
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 0.88A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET x2
на замовлення 7320 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
50+7.91 грн
100+ 6.61 грн
168+ 5.07 грн
461+ 4.78 грн
Мінімальне замовлення: 50
BSS214NH6327XTSA1 BSS214NH6327XTSA1.pdf
BSS214NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 2375 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
18+22.95 грн
27+ 13.96 грн
50+ 8.58 грн
100+ 7.6 грн
193+ 4.47 грн
531+ 4.23 грн
Мінімальне замовлення: 18
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1-DTE.pdf
BSL307SPH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1.pdf
BSS214NWH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 4510 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
53+7.52 грн
100+ 5.36 грн
200+ 4.34 грн
549+ 4.11 грн
Мінімальне замовлення: 53
BSP324H6327XTSA1 BSP324H6327XTSA1.pdf
BSP324H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
11+37.19 грн
25+ 30.71 грн
36+ 23.73 грн
99+ 22.48 грн
Мінімальне замовлення: 11
IRL2505PBF description irl2505pbf.pdf
IRL2505PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 160 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+144.81 грн
10+ 114.63 грн
11+ 78.62 грн
31+ 74.21 грн
Мінімальне замовлення: 3
IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF7201TRPBF description IRF7201TRPBF.pdf
IRF7201TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF7205TRPBF description irf7205pbf.pdf
IRF7205TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 2863 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
9+48.27 грн
49+ 17.71 грн
135+ 16.75 грн
Мінімальне замовлення: 9
IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Case: PG-TO252-3-11
Type of transistor: N-MOSFET
Power dissipation: 100W
Drain current: 38A
Polarisation: unipolar
Drain-source voltage: 100V
On-state resistance: 15mΩ
Mounting: SMD
Technology: OptiMOS® -T
товар відсутній
BSZ150N10LS3GATMA1 BSZ150N10LS3G-DTE.pdf
BSZ150N10LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 63W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 63W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPA050N10NM5SXKSA1 Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d
IPA050N10NM5SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 264A
Kind of package: tube
Mounting: THT
Case: TO220FP
товар відсутній
IAUT150N10S5N035ATMA1 IAUT150N10S5N035.pdf
IAUT150N10S5N035ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 166W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
T700N22TOFXPSA1 Infineon-T700N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b084825402e
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 1.5kA; 700A; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 1.5kA
Load current: 700A
Gate current: 250mA
Case: BG-T5726K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 13.5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
IR2175SPBF IR2175SPBF.pdf
IR2175SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
товар відсутній
DD350N12K 
DD350N12K 
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 350A; BG-PB50-1; Ifsm: 13kA
Case: BG-PB50-1
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 350A
Max. forward voltage: 1.28V
Max. forward impulse current: 13kA
товар відсутній
DD350N14K 
DD350N14K 
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 350A; BG-PB50-1; Ifsm: 13kA
Case: BG-PB50-1
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 350A
Max. forward voltage: 1.28V
Max. forward impulse current: 13kA
товар відсутній
DD350N18K 
DD350N18K 
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 350A; BG-PB50-1; Ifsm: 13kA
Case: BG-PB50-1
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Load current: 350A
Max. forward voltage: 1.28V
Max. forward impulse current: 13kA
товар відсутній
DD340N16SHPSA1 DD340N16S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
DD340N22SHPSA1 DD340N22S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 330A
Case: BG-PB50SB-1
Max. forward voltage: 1.31V
Max. forward impulse current: 10kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
DD350N16K  DD350N18K.pdf
DD350N16K 
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 350A; BG-PB50-1; Ifsm: 13kA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.28V
Load current: 350A
Semiconductor structure: double series
Max. forward impulse current: 13kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-PB50-1
товар відсутній
IGW40N120H3FKSA1 IGW40N120H3-DTE.pdf
IGW40N120H3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
на замовлення 168 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+596.64 грн
3+ 425.44 грн
6+ 401.93 грн
IHW40N120R5XKSA1 IHW40N120R5.pdf
IHW40N120R5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+274.58 грн
5+ 185.9 грн
13+ 176.35 грн
120+ 169 грн
Мінімальне замовлення: 2
IKQ40N120CH3XKSA1 IKQ40N120CH3.pdf
IKQ40N120CH3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Turn-on time: 76ns
Turn-off time: 331ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKQ40N120CT2XKSA1 IKQ40N120CT2.pdf
IKQ40N120CT2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 133W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 379ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKW40N120CS6XKSA1 IKW40N120CS6.pdf
IKW40N120CS6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+568.16 грн
3+ 364.45 грн
IKW40N120H3FKSA1 IKW40N120H3-DTE.pdf
IKW40N120H3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+655.99 грн
2+ 468.06 грн
3+ 467.32 грн
6+ 442.34 грн
IKY40N120CH3XKSA1 IKY40N120CH3.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Manufacturer series: H3
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKY40N120CS6XKSA1 IKY40N120CS6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IM240-M6Z1B
IM240-M6Z1B
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; ClPOS™ Micro
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro
Case: SOP23
Output current: 4A
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 12.5...17.5/0...450V
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 8.9W
товар відсутній
IM240-S6Y1B
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; ClPOS™ Micro
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro
Case: DIP23
Output current: 3A
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 12.5...17.5/0...450V
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 8.4W
товар відсутній
IM240-S6Z1B
IM240-S6Z1B
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; ClPOS™ Micro
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Micro
Case: SOP23
Output current: 3A
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 12.5...17.5/0...450V
Voltage class: 600V
Protection: undervoltage UVP
Power dissipation: 8.4W
товар відсутній
XMC750 WATT MOTOR CONTROL KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4400; Comp: XMC1300,XMC4400
Type of development kit: ARM Infineon
Family: XMC1300; XMC4400
Kit contents: board with XMC1300 microcontroller; board with XMC4400 microcontroller; three-phase inverter
Components: XMC1300; XMC4400
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; screw; USB B micro
Application: 3-phase BLDC motors
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
товар відсутній
XMC DIGITAL POWER EXPLORER KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Kind of connector: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
товар відсутній
IPD90N03S4L02ATMA1 IPD90N03S4L02.pdf
IPD90N03S4L02ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 2.2mΩ
Drain current: 90A
Gate charge: 110nC
Drain-source voltage: 30V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TO252-3
Mounting: SMD
товар відсутній
BSC090N03LSGATMA1 BSC090N03LSG-DTE.pdf
BSC090N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD090N03LGATMA1 IPD090N03LG-DTE.pdf
IPD090N03LGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Power dissipation: 42W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 9mΩ
на замовлення 2482 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+51.43 грн
35+ 25.28 грн
94+ 23.88 грн
500+ 23.07 грн
Мінімальне замовлення: 8
IRL2203NSTRLPBF irl2203nspbf.pdf
IRL2203NSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
PVT422PBF description pvt422.pdf
PVT422PBF
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Relay series: PVT422PbF
товар відсутній
PVT422SPBF description pvt422.pdf
PVT422SPBF
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Relay series: PVT422PbF
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+917.12 грн
2+ 476.14 грн
5+ 449.69 грн
IRF8301MTRPBF IRF8301MTRPBF.pdf
IRF8301MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 192A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 192A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IGB20N65S5ATMA1 IGB20N65S5.pdf
IGB20N65S5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 28A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 137ns
товар відсутній
IHW20N65R5XKSA1 IHW20N65R5.pdf
IHW20N65R5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-off time: 257ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
IKB20N65EH5ATMA1 IKB20N65EH5.pdf
IKB20N65EH5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 183ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 957 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+250.84 грн
5+ 210.15 грн
6+ 160.92 грн
15+ 152.1 грн
Мінімальне замовлення: 2
IRFH5004TRPBF irfh5004pbf.pdf
IRFH5004TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFH5006TRPBF irfh5006pbf.pdf
IRFH5006TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 250W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Drain-source voltage: 60V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
товар відсутній
IRFH5007TRPBF irfh5007pbf.pdf
IRFH5007TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Drain-source voltage: 75V
Drain current: 17A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
товар відсутній
IR4426PBF description IR4426PBF.pdf
IR4426PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+212.86 грн
3+ 177.82 грн
Мінімальне замовлення: 2
IPD110N12N3GATMA1 dgdl?fileId=db3a30432239cccd0122a7a49e2b7d1d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Drain-source voltage: 120V
Drain current: 54A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
товар відсутній
SPD50N03S207GBTMA1 SPD50N03S207G-DTE.pdf
SPD50N03S207GBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
на замовлення 1482 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+61.72 грн
8+ 51.43 грн
18+ 48.71 грн
49+ 46.05 грн
100+ 44.82 грн
500+ 44.09 грн
Мінімальне замовлення: 7
BSC050N03LSGATMA1 BSC050N03LSG-DTE.pdf
BSC050N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSC050N03MSGATMA1 BSC050N03MSG-DTE.pdf
BSC050N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ050N03LSGATMA1 BSZ050N03LSG-DTE.pdf
BSZ050N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSZ050N03MSGATMA1 BSZ050N03MSG-DTE.pdf
BSZ050N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Power dissipation: 68W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 5mΩ
на замовлення 2347 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+59.35 грн
9+ 41.88 грн
25+ 36.96 грн
27+ 32.11 грн
75+ 30.35 грн
500+ 29.91 грн
Мінімальне замовлення: 7
IRF7749L1TRPBF IRF7749L1TRPBF.pdf
IRF7749L1TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 3.3W
Case: DirectFET
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 227 454 681 908 1135 1362 1589 1816 2043 2219 2220 2221 2222 2223 2224 2225 2226 2227 2228 2229 2270 2275  [ Наступна Сторінка >> ]