Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136446) > Сторінка 2228 з 2275
Фото | Назва | Виробник | Інформація |
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IRLZ44NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 41A Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLZ44ZSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 51A Power dissipation: 80W Case: D2PAK Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level |
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IGB30N60H3ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube |
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IGB30N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 39A Power dissipation: 187W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Turn-on time: 44ns Turn-off time: 0.3µs |
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IGW30N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
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IGW30N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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IKW30N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 94W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 165nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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IKW30N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 39A; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 39A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 167nC Kind of package: tube Turn-on time: 44ns Turn-off time: 0.3µs Features of semiconductor devices: integrated anti-parallel diode |
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AIKW30N60CTXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 167nC Kind of package: tube Turn-on time: 44ns Turn-off time: 0.3µs Features of semiconductor devices: integrated anti-parallel diode |
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DD180N16SHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 1.6kV; If: 226A; BG-PB34SB-1; screw Max. off-state voltage: 1.6kV Max. forward impulse current: 5.75kA Semiconductor structure: double series Case: BG-PB34SB-1 Mechanical mounting: screw Electrical mounting: screw Load current: 226A Type of module: diode Max. forward voltage: 1.39V |
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DD180N20SHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 2kV; If: 226A; BG-PB34SB-1; screw Case: BG-PB34SB-1 Semiconductor structure: double series Max. off-state voltage: 2kV Electrical mounting: screw Mechanical mounting: screw Max. forward impulse current: 5.75kA Max. forward voltage: 1.39V Type of module: diode Load current: 226A |
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DD180N22SHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 226A Case: BG-PB34SB-1 Max. forward voltage: 1.39V Max. forward impulse current: 5.75kA Electrical mounting: screw Mechanical mounting: screw |
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TD180N16KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.6kV; 180A; BG-PB34-1; Ufmax: 1.41V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 180A Max. load current: 285A Case: BG-PB34-1 Max. forward voltage: 1.41V Max. forward impulse current: 4.8kA Gate current: 150mA Electrical mounting: screw Mechanical mounting: screw |
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IPD80R3K3P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.3A Power dissipation: 18W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Gate charge: 6nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IR2302SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Supply voltage: 5...20V DC Operating temperature: -40...125°C Mounting: SMD Case: SO8 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Power: 625mW Turn-on time: 750ns Turn-off time: 200ns Output current: -350...200mA Type of integrated circuit: driver Number of channels: 2 |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IR2302STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Supply voltage: 5...20V DC Operating temperature: -40...125°C Mounting: SMD Case: SO8 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Power: 625mW Turn-on time: 750ns Turn-off time: 200ns Output current: -350...200mA Type of integrated circuit: driver Number of channels: 2 |
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IRS2302SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Operating temperature: -40...125°C Kind of package: tube Supply voltage: 5...20V DC Turn-on time: 650ns Turn-off time: 200ns Output current: -350...200mA Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Mounting: SMD Case: SO8 Power: 625mW |
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IR21064PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -350...200mA Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns |
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IR2106SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -350...200mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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IR2106STRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -350...200mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns |
на замовлення 1396 шт: термін постачання 21-30 дні (днів) |
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IR2102SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns |
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IR2102STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns |
на замовлення 1978 шт: термін постачання 21-30 дні (днів) |
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IR21094SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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IR2109PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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IR2109STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -250...120mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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IPW60R125CPFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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SPD08N50C3BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Kind of channel: enhanced |
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IRFR5305TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR5305TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 616 шт: термін постачання 21-30 дні (днів) |
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AUIRFR5305 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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AUIRFR5305TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRFR5305TRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -22A Pulsed drain current: -110A Power dissipation: 110W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhanced |
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EVAL-IMM101T-046TOBO1 (SP004177752) | INFINEON TECHNOLOGIES |
![]() Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors Application: motors Interface: GPIO; I2C; PWM; UART Kit contents: prototype board Type of development kit: evaluation Kind of module: motor driver Components: IMM101T-046M Kind of connector: screw terminal x2 |
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IAUZ40N06S5L050ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 252A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 36.7nC Kind of package: reel; tape Kind of channel: enhanced |
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IAUZ40N06S5N050ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 241A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 30.5nC Kind of package: reel; tape Kind of channel: enhanced |
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IAUZ40N06S5N105ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 120A Power dissipation: 42W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhanced |
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IPA040N06NM5SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 51A Pulsed drain current: 288A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA040N06NXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 69A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPD640N06LGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 72A Power dissipation: 47W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Kind of channel: enhanced |
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IPI040N06N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of channel: enhanced |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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IPP040N06N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 583 шт: термін постачання 21-30 дні (днів) |
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IPP040N06NAKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 107W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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BFR193E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
на замовлення 2809 шт: термін постачання 21-30 дні (днів) |
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BFR193FH6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: TSFP-3 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
на замовлення 1433 шт: термін постачання 21-30 дні (днів) |
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BFR193L3E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: TSLP-3-1 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
на замовлення 756 шт: термін постачання 21-30 дні (днів) |
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BFR193WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
на замовлення 1977 шт: термін постачання 21-30 дні (днів) |
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TLE9254SKXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-14; -40÷150°C; 48mA Kind of package: reel; tape DC supply current: 48mA Case: PG-DSO-14 Mounting: SMD Kind of integrated circuit: transceiver Interface: CAN-FD Integrated circuit features: WUP Operating temperature: -40...150°C Supply voltage: 4.5...5.5V DC Type of integrated circuit: interface Number of transmitters: 2 Number of receivers: 2 |
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TLD5097EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; LED controller,SMPS controller; Litix™; PG-TSDSO-14 Type of integrated circuit: driver Kind of integrated circuit: LED controller; SMPS controller Technology: Litix™ Case: PG-TSDSO-14 Output current: -550...380mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 4.5...45V Protection: overheating OTP |
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TLD5098EPXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; LED controller,SMPS controller; Litix™; PG-TSDSO-14 Mounting: SMD Number of channels: 1 Integrated circuit features: linear dimming; PWM Type of integrated circuit: driver Output current: -550...380mA Operating voltage: 4.5...45V Case: PG-TSDSO-14 Protection: overheating OTP Technology: Litix™ Kind of integrated circuit: LED controller; SMPS controller |
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IPD040N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Power dissipation: 94W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 79A On-state resistance: 4mΩ |
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IPN80R1K2P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223 Kind of package: reel Drain-source voltage: 800V Drain current: 3.1A On-state resistance: 1.2Ω Type of transistor: N-MOSFET Power dissipation: 6.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 11nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 |
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IPD50N04S408ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 47A Pulsed drain current: 200A Power dissipation: 46W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Kind of channel: enhanced |
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IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Type of transistor: N-MOSFET x2 Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 65W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhanced |
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IGD06N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 6A; 88W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 136ns |
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IGP06N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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IKA06N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6.2A Power dissipation: 28W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 42nC Kind of package: tube Turn-on time: 15ns Turn-off time: 188ns Features of semiconductor devices: integrated anti-parallel diode |
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IKB06N60TATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 188ns Features of semiconductor devices: integrated anti-parallel diode |
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IKD06N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 19ns Turn-off time: 279ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 1170 шт: термін постачання 21-30 дні (днів) |
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IKD06N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 128ns Features of semiconductor devices: integrated anti-parallel diode |
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IKP06N60TXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: THT Gate charge: 42nC Kind of package: tube Turn-on time: 15ns Turn-off time: 188ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
IRLZ44NSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRLZ44ZSTRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 51A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 51A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IGB30N60H3ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
товар відсутній
IGB30N60TATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Turn-on time: 44ns
Turn-off time: 0.3µs
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: SMD
Gate charge: 167nC
Kind of package: reel; tape
Turn-on time: 44ns
Turn-off time: 0.3µs
товар відсутній
IGW30N60H3FKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
товар відсутній
IGW30N60TFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 304.65 грн |
3+ | 254.97 грн |
5+ | 195.45 грн |
13+ | 185.17 грн |
IKW30N60H3FKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 282.5 грн |
5+ | 181.49 грн |
14+ | 171.2 грн |
IKW30N60TFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 39A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 0.3µs
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 39A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 0.3µs
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
AIKW30N60CTXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 0.3µs
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 0.3µs
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
DD180N16SHPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 226A; BG-PB34SB-1; screw
Max. off-state voltage: 1.6kV
Max. forward impulse current: 5.75kA
Semiconductor structure: double series
Case: BG-PB34SB-1
Mechanical mounting: screw
Electrical mounting: screw
Load current: 226A
Type of module: diode
Max. forward voltage: 1.39V
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 226A; BG-PB34SB-1; screw
Max. off-state voltage: 1.6kV
Max. forward impulse current: 5.75kA
Semiconductor structure: double series
Case: BG-PB34SB-1
Mechanical mounting: screw
Electrical mounting: screw
Load current: 226A
Type of module: diode
Max. forward voltage: 1.39V
товар відсутній
DD180N20SHPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 226A; BG-PB34SB-1; screw
Case: BG-PB34SB-1
Semiconductor structure: double series
Max. off-state voltage: 2kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 5.75kA
Max. forward voltage: 1.39V
Type of module: diode
Load current: 226A
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 226A; BG-PB34SB-1; screw
Case: BG-PB34SB-1
Semiconductor structure: double series
Max. off-state voltage: 2kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward impulse current: 5.75kA
Max. forward voltage: 1.39V
Type of module: diode
Load current: 226A
товар відсутній
DD180N22SHPSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 226A
Case: BG-PB34SB-1
Max. forward voltage: 1.39V
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 226A
Case: BG-PB34SB-1
Max. forward voltage: 1.39V
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
TD180N16KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 180A; BG-PB34-1; Ufmax: 1.41V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 180A
Max. load current: 285A
Case: BG-PB34-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 180A; BG-PB34-1; Ufmax: 1.41V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 180A
Max. load current: 285A
Case: BG-PB34-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
IPD80R3K3P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IR2302SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 5...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 750ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 5...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 750ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 307.82 грн |
5+ | 196.92 грн |
13+ | 186.63 грн |
IR2302STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 5...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 750ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 5...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Case: SO8
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Power: 625mW
Turn-on time: 750ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
товар відсутній
IRS2302SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V DC
Turn-on time: 650ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Case: SO8
Power: 625mW
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...20V DC
Turn-on time: 650ns
Turn-off time: 200ns
Output current: -350...200mA
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: SMD
Case: SO8
Power: 625mW
товар відсутній
IR21064PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -350...200mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -350...200mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
товар відсутній
IR2106SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
на замовлення 55 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 197.83 грн |
5+ | 164.59 грн |
7+ | 126.27 грн |
19+ | 119.38 грн |
IR2106STRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
на замовлення 1396 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 98.91 грн |
5+ | 83.03 грн |
13+ | 70.54 грн |
34+ | 66.87 грн |
100+ | 66.13 грн |
500+ | 64.66 грн |
IR2102SPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
товар відсутній
IR2102STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
на замовлення 1978 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 98.91 грн |
5+ | 83.03 грн |
13+ | 70.54 грн |
34+ | 66.13 грн |
500+ | 64.66 грн |
IR21094SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 134.52 грн |
4+ | 109.48 грн |
10+ | 85.97 грн |
28+ | 81.56 грн |
IR2109PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 158.71 грн |
8+ | 121.97 грн |
20+ | 115.36 грн |
IR2109STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 79.36 грн |
12+ | 75.68 грн |
25+ | 73.48 грн |
31+ | 72.01 грн |
100+ | 69.07 грн |
IPW60R125CPFKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
SPD08N50C3BTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRFR5305TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFR5305TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 616 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 56.97 грн |
10+ | 40.12 грн |
25+ | 36 грн |
32+ | 27.55 грн |
87+ | 26.08 грн |
AUIRFR5305 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 197.83 грн |
AUIRFR5305TR |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
AUIRFR5305TRL |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Pulsed drain current: -110A
Power dissipation: 110W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -22A; Idm: -110A; 110W
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -22A
Pulsed drain current: -110A
Power dissipation: 110W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
EVAL-IMM101T-046TOBO1 (SP004177752) |
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Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Application: motors
Interface: GPIO; I2C; PWM; UART
Kit contents: prototype board
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Application: motors
Interface: GPIO; I2C; PWM; UART
Kit contents: prototype board
Type of development kit: evaluation
Kind of module: motor driver
Components: IMM101T-046M
Kind of connector: screw terminal x2
товар відсутній
IAUZ40N06S5L050ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 252A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 252A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±16V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 36.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
IAUZ40N06S5N050ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 241A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 241A
Power dissipation: 71W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
IAUZ40N06S5N105ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 120A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 120A
Power dissipation: 42W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
IPA040N06NM5SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Pulsed drain current: 288A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Pulsed drain current: 288A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPA040N06NXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPD640N06LGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPI040N06N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhanced
на замовлення 97 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 81.5 грн |
6+ | 66.87 грн |
10+ | 59.52 грн |
16+ | 55.84 грн |
43+ | 52.9 грн |
IPP040N06N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 583 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 80.09 грн |
10+ | 73.48 грн |
13+ | 69.8 грн |
34+ | 66.13 грн |
250+ | 63.19 грн |
IPP040N06NAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
BFR193E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 2809 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
33+ | 12.34 грн |
40+ | 9.18 грн |
100+ | 8.08 грн |
114+ | 7.52 грн |
312+ | 7.11 грн |
BFR193FH6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSFP-3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 1433 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
38+ | 10.45 грн |
45+ | 8.23 грн |
100+ | 6.54 грн |
142+ | 6.03 грн |
250+ | 5.73 грн |
390+ | 5.66 грн |
1000+ | 5.51 грн |
BFR193L3E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 756 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 36.4 грн |
18+ | 21.6 грн |
25+ | 18.81 грн |
67+ | 12.71 грн |
185+ | 12.05 грн |
500+ | 11.61 грн |
BFR193WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 1977 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 17.96 грн |
41+ | 9.11 грн |
100+ | 8.01 грн |
119+ | 7.2 грн |
327+ | 6.83 грн |
TLE9254SKXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-14; -40÷150°C; 48mA
Kind of package: reel; tape
DC supply current: 48mA
Case: PG-DSO-14
Mounting: SMD
Kind of integrated circuit: transceiver
Interface: CAN-FD
Integrated circuit features: WUP
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Number of transmitters: 2
Number of receivers: 2
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-14; -40÷150°C; 48mA
Kind of package: reel; tape
DC supply current: 48mA
Case: PG-DSO-14
Mounting: SMD
Kind of integrated circuit: transceiver
Interface: CAN-FD
Integrated circuit features: WUP
Operating temperature: -40...150°C
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Number of transmitters: 2
Number of receivers: 2
товар відсутній
TLD5097EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; LED controller,SMPS controller; Litix™; PG-TSDSO-14
Type of integrated circuit: driver
Kind of integrated circuit: LED controller; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V
Protection: overheating OTP
Category: LED drivers
Description: IC: driver; LED controller,SMPS controller; Litix™; PG-TSDSO-14
Type of integrated circuit: driver
Kind of integrated circuit: LED controller; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V
Protection: overheating OTP
товар відсутній
TLD5098EPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; LED controller,SMPS controller; Litix™; PG-TSDSO-14
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Type of integrated circuit: driver
Output current: -550...380mA
Operating voltage: 4.5...45V
Case: PG-TSDSO-14
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED controller; SMPS controller
Category: LED drivers
Description: IC: driver; LED controller,SMPS controller; Litix™; PG-TSDSO-14
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Type of integrated circuit: driver
Output current: -550...380mA
Operating voltage: 4.5...45V
Case: PG-TSDSO-14
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: LED controller; SMPS controller
товар відсутній
IPD040N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Power dissipation: 94W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Power dissipation: 94W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 4mΩ
товар відсутній
IPN80R1K2P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223
Kind of package: reel
Drain-source voltage: 800V
Drain current: 3.1A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 6.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 11nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223
Kind of package: reel
Drain-source voltage: 800V
Drain current: 3.1A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 6.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 11nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
товар відсутній
IPD50N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPG20N04S408ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
товар відсутній
IGD06N60TATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 136ns
товар відсутній
IGP06N60TXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
на замовлення 68 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 82.3 грн |
6+ | 68.33 грн |
10+ | 60.99 грн |
17+ | 53.64 грн |
45+ | 50.7 грн |
IKA06N60TXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6.2A; 28W; TO220FP
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6.2A
Power dissipation: 28W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKB06N60TATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKD06N60RATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 1170 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 58.56 грн |
8+ | 48.79 грн |
22+ | 39.83 грн |
60+ | 37.69 грн |
500+ | 36.3 грн |
IKD06N60RFATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 15ns
Turn-off time: 128ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IKP06N60TXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Turn-on time: 15ns
Turn-off time: 188ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній