Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136448) > Сторінка 2233 з 2275
| Фото | Назва | Виробник | Інформація |
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| IRF9Z24NSTRLPBF | INFINEON TECHNOLOGIES |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -8.5A Pulsed drain current: -48A Power dissipation: 45W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: SMD Kind of channel: enhanced |
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BAT6404E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: double series Case: SOT23 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
на замовлення 3375 шт: термін постачання 21-30 дні (днів) |
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| AUIPS6031RTRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.8A; Ch: 1; N-Channel; SMD; DPAK; reel Output current: 2.8A Operating temperature: -40...150°C Mounting: SMD Application: automotive industry Case: DPAK Kind of package: reel Number of channels: 1 Type of integrated circuit: power switch Technology: Classic PROFET Kind of integrated circuit: high-side Power dissipation: 2.5W On-state resistance: 60mΩ Kind of output: N-Channel |
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IRLR3410TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 938 шт: термін постачання 21-30 дні (днів) |
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IRLR3410TRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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PVI1050NPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; THT; OUT: photodiode; DIP8; PVI-NPbF Type of optocoupler: optocoupler Mounting: THT Kind of output: photodiode Case: DIP8 Manufacturer series: PVI-NPbF |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Power dissipation: 1W Case: PG-SOT89 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhanced |
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.021A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 500Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 4904 шт: термін постачання 21-30 дні (днів) |
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TLE6240GPAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 1÷3A; Ch: 16; N-Channel; SMD; PG-DSO-36 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1...3A Number of channels: 16 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-36 Supply voltage: 4.5...5.5V DC Technology: FLEX Operating temperature: -40...150°C Turn-on time: 12µs Turn-off time: 12µs |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Case: SC79 Max. off-state voltage: 150V Max. forward voltage: 1.1V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF |
на замовлення 2020 шт: термін постачання 21-30 дні (днів) |
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IRF9393TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.3A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 19.4mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel Kind of channel: enhanced |
на замовлення 3844 шт: термін постачання 21-30 дні (днів) |
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F450R12KS4B11BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 50A Application: Inverter Case: AG-ECONO2-6 Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Topology: IGBT half-bridge x2; NTC thermistor Power dissipation: 355W Technology: EconoPACK™ 2 Mechanical mounting: screw |
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FF450R06ME3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Case: AG-ECONOD-3 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 1.25kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor |
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| FF450R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Case: AG-62MM Power dissipation: 2.4kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A |
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| FF450R12KT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Case: AG-62MM Power dissipation: 2.4kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A |
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| FF450R33T3E3B5BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Pulsed collector current: 900A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: XHP™3 Topology: IGBT half-bridge Case: AG-XHP100-6 Max. off-state voltage: 3.3kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A |
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| IFF450B12ME4PB11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Case: AG-ECONOD-6 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Application: for UPS; Inverter; motors; photovoltaics Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor |
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IHW20N120R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 144W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-off time: 440ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IRF7351TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7317TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8 Case: SO8 Mounting: SMD Kind of package: reel Power dissipation: 2W Polarisation: unipolar Drain current: 6.6/-5.3A Drain-source voltage: 20/-20V Technology: HEXFET® Kind of channel: enhanced Type of transistor: N/P-MOSFET Gate-source voltage: ±12V On-state resistance: 29/58mΩ |
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IRF7379TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 45/90mΩ Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7380TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| IPD50R1K4CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 550V; 3.1A; Idm: 8.8A; 42W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 550V Drain current: 3.1A Pulsed drain current: 8.8A Power dissipation: 42W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced |
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BTS5090-1EJA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DSO8 On-state resistance: 90mΩ Supply voltage: 13.5V DC Technology: PROFET™+ 12V |
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IRS2110SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 155ns Turn-off time: 137ns |
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IRS2113PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -2...2A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 155ns Turn-off time: 137ns |
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IRS2117SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
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IRS2118PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
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IRS2118SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
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DF400R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: AG-62MM-1 Power dissipation: 2kW Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: buck chopper |
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BCR112E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Mounting: SMD Case: SOT23 Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 140MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W |
на замовлення 2360 шт: термін постачання 21-30 дні (днів) |
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BCR562E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ Mounting: SMD Case: SOT23 Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 150MHz Collector-emitter voltage: 50V Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.33W |
на замовлення 2645 шт: термін постачання 21-30 дні (днів) |
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BCR116SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ Mounting: SMD Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Case: SOT363 Frequency: 150MHz Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN x2 |
на замовлення 1854 шт: термін постачання 21-30 дні (днів) |
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BAR74E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.25A; 4ns; SOT23; Ufmax: 1V; Ifsm: 4.5A Mounting: SMD Max. forward impulse current: 4.5A Max. forward voltage: 1V Power dissipation: 0.37W Features of semiconductor devices: ultrafast switching Max. off-state voltage: 50V Load current: 0.25A Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Type of diode: switching Reverse recovery time: 4ns |
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BAS16UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Features of semiconductor devices: ultrafast switching Case: SC74 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.25W Kind of package: reel; tape |
на замовлення 4780 шт: термін постачання 21-30 дні (днів) |
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BAV70UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: common cathode; double x2 Features of semiconductor devices: ultrafast switching Case: SC74 Power dissipation: 0.25W Kind of package: reel; tape |
на замовлення 9099 шт: термін постачання 21-30 дні (днів) |
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BAV99UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: double series x2 Features of semiconductor devices: ultrafast switching Case: SC74 Power dissipation: 0.25W Kind of package: reel; tape |
на замовлення 1232 шт: термін постачання 21-30 дні (днів) |
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BAW101E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 300V Load current: 0.25A Reverse recovery time: 1µs Semiconductor structure: double independent Case: SOT143 Power dissipation: 0.35W Kind of package: reel; tape |
на замовлення 4850 шт: термін постачання 21-30 дні (днів) |
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BAW156E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Case: SOT23 Power dissipation: 0.25W Kind of package: reel; tape |
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SMBD914E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape Mounting: SMD Power dissipation: 0.37W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching Case: SOT23 Max. off-state voltage: 100V Load current: 0.25A Semiconductor structure: single diode |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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BAT54E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 230mW Case: SOT23 Mounting: SMD Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 0.6A Power dissipation: 0.23W Type of diode: Schottky rectifying Max. off-state voltage: 30V |
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BAT64E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Case: SOT23 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
на замовлення 830 шт: термін постачання 21-30 дні (днів) |
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BAT165E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.75A; SOD323 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.75A Semiconductor structure: single diode Case: SOD323 |
на замовлення 8200 шт: термін постачання 21-30 дні (днів) |
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BAS170WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOD323; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Case: SOD323 Max. forward impulse current: 0.1A Power dissipation: 0.25W |
на замовлення 1319 шт: термін постачання 21-30 дні (днів) |
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BAS4004E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double series Case: SOT23 Max. forward impulse current: 0.2A Power dissipation: 0.25W |
на замовлення 4490 шт: термін постачання 21-30 дні (днів) |
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BAS4005E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common cathode; double Case: SOT23 Max. forward impulse current: 0.2A Power dissipation: 0.25W |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BAS4006E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW Mounting: SMD Max. forward impulse current: 0.2A Power dissipation: 0.25W Type of diode: Schottky switching Case: SOT23 Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common anode; double |
товар відсутній |
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BAS4007E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT143; 250mW Mounting: SMD Max. forward impulse current: 0.2A Power dissipation: 0.25W Type of diode: Schottky switching Case: SOT143 Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double independent |
на замовлення 2015 шт: термін постачання 21-30 дні (днів) |
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BAS7004E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT23; 250mW Mounting: SMD Case: SOT23 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Max. forward impulse current: 0.1A Power dissipation: 0.25W Type of diode: Schottky switching |
на замовлення 4915 шт: термін постачання 21-30 дні (днів) |
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BAS7007E6327 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT143; 250mW Mounting: SMD Case: SOT143 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double independent Max. forward impulse current: 0.1A Power dissipation: 0.25W Type of diode: Schottky switching |
на замовлення 2684 шт: термін постачання 21-30 дні (днів) |
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BAT1704E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 4V; 0.13A; SOT23; 150mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 4V Load current: 0.13A Semiconductor structure: double series Case: SOT23 Power dissipation: 0.15W |
на замовлення 2989 шт: термін постачання 21-30 дні (днів) |
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BAT6405E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: common cathode; double Case: SOT23 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
на замовлення 5920 шт: термін постачання 21-30 дні (днів) |
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BAT6406E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: common anode; double Case: SOT23 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
на замовлення 3795 шт: термін постачання 21-30 дні (днів) |
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BAT1503WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 4V; 0.11A; SOD323; 100mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 4V Load current: 0.11A Semiconductor structure: single diode Case: SOD323 Power dissipation: 0.1W |
на замовлення 6769 шт: термін постачання 21-30 дні (днів) |
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BAS3010A03WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323 Mounting: SMD Type of diode: Schottky rectifying Case: SOD323 Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 10A |
на замовлення 3612 шт: термін постачання 21-30 дні (днів) |
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BGX50AE6327 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape Mounting: SMD Max. off-state voltage: 50V Load current: 0.14A Semiconductor structure: bridge rectifier Power dissipation: 0.21W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching Case: SOT143 |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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SMBTA42E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23 Mounting: SMD Case: SOT23 Polarisation: bipolar Frequency: 70MHz Collector-emitter voltage: 300V Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.36W |
товар відсутній |
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BAS40E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; 250mW Semiconductor structure: single diode Max. forward impulse current: 0.2A Power dissipation: 0.25W Type of diode: Schottky rectifying Mounting: SMD Case: SOT23 Max. off-state voltage: 40V Load current: 0.12A |
товар відсутній |
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BF771E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT23 Kind of package: reel; tape Collector-emitter voltage: 12V Current gain: 70...140 Collector current: 80mA Type of transistor: NPN Power dissipation: 0.58W Polarisation: bipolar Kind of transistor: RF Mounting: SMD Case: SOT23 Frequency: 8GHz |
товар відсутній |
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| BFP196E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 0.15A Power dissipation: 0.7W Case: SOT143 Current gain: 70...140 Mounting: SMD Kind of package: reel; tape Frequency: 7.5GHz |
товар відсутній |
| IRF9Z24NSTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BAT6404E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 3375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 15.03 грн |
| 41+ | 8.96 грн |
| 50+ | 7.44 грн |
| 100+ | 5.69 грн |
| 270+ | 3.21 грн |
| 500+ | 3.2 грн |
| 742+ | 3.03 грн |
| AUIPS6031RTRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; N-Channel; SMD; DPAK; reel
Output current: 2.8A
Operating temperature: -40...150°C
Mounting: SMD
Application: automotive industry
Case: DPAK
Kind of package: reel
Number of channels: 1
Type of integrated circuit: power switch
Technology: Classic PROFET
Kind of integrated circuit: high-side
Power dissipation: 2.5W
On-state resistance: 60mΩ
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; N-Channel; SMD; DPAK; reel
Output current: 2.8A
Operating temperature: -40...150°C
Mounting: SMD
Application: automotive industry
Case: DPAK
Kind of package: reel
Number of channels: 1
Type of integrated circuit: power switch
Technology: Classic PROFET
Kind of integrated circuit: high-side
Power dissipation: 2.5W
On-state resistance: 60mΩ
Kind of output: N-Channel
товар відсутній
| IRLR3410TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 938 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.05 грн |
| 10+ | 53.27 грн |
| 27+ | 32.62 грн |
| 73+ | 30.79 грн |
| IRLR3410TRRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| PVI1050NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; DIP8; PVI-NPbF
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: photodiode
Case: DIP8
Manufacturer series: PVI-NPbF
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; DIP8; PVI-NPbF
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: photodiode
Case: DIP8
Manufacturer series: PVI-NPbF
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 514.35 грн |
| 3+ | 397.52 грн |
| 6+ | 376.21 грн |
| BSS606NH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSS127H6327XTSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.021A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 500Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.021A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 500Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 4904 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 49+ | 8.23 грн |
| 54+ | 6.83 грн |
| 143+ | 5.95 грн |
| 391+ | 5.66 грн |
| 1000+ | 5.44 грн |
| TLE6240GPAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1÷3A; Ch: 16; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1...3A
Number of channels: 16
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
Supply voltage: 4.5...5.5V DC
Technology: FLEX
Operating temperature: -40...150°C
Turn-on time: 12µs
Turn-off time: 12µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1÷3A; Ch: 16; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1...3A
Number of channels: 16
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
Supply voltage: 4.5...5.5V DC
Technology: FLEX
Operating temperature: -40...150°C
Turn-on time: 12µs
Turn-off time: 12µs
товар відсутній
| BAR6402VH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Case: SC79
Max. off-state voltage: 150V
Max. forward voltage: 1.1V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
на замовлення 2020 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.67 грн |
| 50+ | 8.08 грн |
| 100+ | 7.35 грн |
| 150+ | 5.8 грн |
| 410+ | 5.51 грн |
| IRF9393TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhanced
на замовлення 3844 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33 грн |
| 25+ | 27.92 грн |
| 41+ | 21.31 грн |
| 111+ | 20.13 грн |
| F450R12KS4B11BOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 50A
Application: Inverter
Case: AG-ECONO2-6
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT half-bridge x2; NTC thermistor
Power dissipation: 355W
Technology: EconoPACK™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 50A
Application: Inverter
Case: AG-ECONO2-6
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: IGBT half-bridge x2; NTC thermistor
Power dissipation: 355W
Technology: EconoPACK™ 2
Mechanical mounting: screw
товар відсутній
| FF450R06ME3 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-3
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 1.25kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
товар відсутній
| FF450R12KE4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-62MM
Power dissipation: 2.4kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-62MM
Power dissipation: 2.4kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
товар відсутній
| FF450R12KT4HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-62MM
Power dissipation: 2.4kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-62MM
Power dissipation: 2.4kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
товар відсутній
| FF450R33T3E3B5BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XHP™3
Topology: IGBT half-bridge
Case: AG-XHP100-6
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XHP™3
Topology: IGBT half-bridge
Case: AG-XHP100-6
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
товар відсутній
| IFF450B12ME4PB11BPSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Case: AG-ECONOD-6
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: for UPS; Inverter; motors; photovoltaics
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
товар відсутній
| IHW20N120R5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.66 грн |
| 3+ | 238.8 грн |
| 5+ | 184.43 грн |
| 13+ | 174.14 грн |
| IRF7351TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7317TRPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Drain current: 6.6/-5.3A
Drain-source voltage: 20/-20V
Technology: HEXFET®
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Power dissipation: 2W
Polarisation: unipolar
Drain current: 6.6/-5.3A
Drain-source voltage: 20/-20V
Technology: HEXFET®
Kind of channel: enhanced
Type of transistor: N/P-MOSFET
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
товар відсутній
| IRF7379TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF7380TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPD50R1K4CEAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 3.1A; Idm: 8.8A; 42W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 3.1A
Pulsed drain current: 8.8A
Power dissipation: 42W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 3.1A; Idm: 8.8A; 42W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 3.1A
Pulsed drain current: 8.8A
Power dissipation: 42W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BTS5090-1EJA |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
товар відсутній
| IRS2110SPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
товар відсутній
| IRS2113PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 155ns
Turn-off time: 137ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 155ns
Turn-off time: 137ns
товар відсутній
| IRS2117SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
товар відсутній
| IRS2118PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
товар відсутній
| IRS2118SPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
товар відсутній
| DF400R12KE3HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: AG-62MM-1
Power dissipation: 2kW
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: AG-62MM-1
Power dissipation: 2kW
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
товар відсутній
| BCR112E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 140MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 140MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
на замовлення 2360 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 88+ | 4.53 грн |
| 100+ | 3.7 грн |
| 303+ | 2.8 грн |
| 833+ | 2.65 грн |
| BCR562E6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.33W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.33W
на замовлення 2645 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.45 грн |
| 60+ | 6.25 грн |
| 100+ | 5.58 грн |
| 200+ | 4.34 грн |
| 540+ | 4.11 грн |
| BCR116SH6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN x2
на замовлення 1854 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 53+ | 7.52 грн |
| 100+ | 6.25 грн |
| 178+ | 4.85 грн |
| 250+ | 4.84 грн |
| 490+ | 4.58 грн |
| BAR74E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.25A; 4ns; SOT23; Ufmax: 1V; Ifsm: 4.5A
Mounting: SMD
Max. forward impulse current: 4.5A
Max. forward voltage: 1V
Power dissipation: 0.37W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 50V
Load current: 0.25A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: switching
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.25A; 4ns; SOT23; Ufmax: 1V; Ifsm: 4.5A
Mounting: SMD
Max. forward impulse current: 4.5A
Max. forward voltage: 1V
Power dissipation: 0.37W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 50V
Load current: 0.25A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: switching
Reverse recovery time: 4ns
товар відсутній
| BAS16UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: ultrafast switching
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: ultrafast switching
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 4780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 11.08 грн |
| 38+ | 9.7 грн |
| 41+ | 8.96 грн |
| 100+ | 8.52 грн |
| 112+ | 7.72 грн |
| 250+ | 7.64 грн |
| 308+ | 7.27 грн |
| 500+ | 7.13 грн |
| 1000+ | 7.05 грн |
| BAV70UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Features of semiconductor devices: ultrafast switching
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
Features of semiconductor devices: ultrafast switching
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 9099 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 298+ | 1.33 грн |
| 302+ | 1.22 грн |
| BAV99UE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SC74; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SC74
Power dissipation: 0.25W
Kind of package: reel; tape
на замовлення 1232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 44+ | 9.18 грн |
| 100+ | 6.91 грн |
| 158+ | 5.51 грн |
| 434+ | 5.22 грн |
| BAW101E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; 350mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Power dissipation: 0.35W
Kind of package: reel; tape
на замовлення 4850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.6 грн |
| 50+ | 8.08 грн |
| 100+ | 7.13 грн |
| 135+ | 6.32 грн |
| 370+ | 6.03 грн |
| 3000+ | 5.95 грн |
| BAW156E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT23; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Case: SOT23
Power dissipation: 0.25W
Kind of package: reel; tape
товар відсутній
| SMBD914E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Mounting: SMD
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT23
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Mounting: SMD
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT23
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| BAT54E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 230mW
Case: SOT23
Mounting: SMD
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 230mW
Case: SOT23
Mounting: SMD
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
товар відсутній
| BAT64E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 15.03 грн |
| 39+ | 9.48 грн |
| 50+ | 7.47 грн |
| 100+ | 5.26 грн |
| 283+ | 3.06 грн |
| 778+ | 2.89 грн |
| BAT165E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.75A; SOD323
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Case: SOD323
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.75A; SOD323
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Case: SOD323
на замовлення 8200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.24 грн |
| 50+ | 7.94 грн |
| 100+ | 6.98 грн |
| 140+ | 6.32 грн |
| 380+ | 5.97 грн |
| 3000+ | 5.8 грн |
| BAS170WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOD323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOD323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
на замовлення 1319 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.13 грн |
| 60+ | 6.25 грн |
| 100+ | 5.44 грн |
| 180+ | 4.7 грн |
| 495+ | 4.41 грн |
| BAS4004E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
на замовлення 4490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.45 грн |
| 75+ | 5 грн |
| 100+ | 4.5 грн |
| 250+ | 3.47 грн |
| 680+ | 3.28 грн |
| BAS4005E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.45 грн |
| 75+ | 5 грн |
| 100+ | 4.49 грн |
| 250+ | 3.46 грн |
| 685+ | 3.27 грн |
| BAS4006E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
Case: SOT23
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT23; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
Case: SOT23
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
товар відсутній
| BAS4007E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT143; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.12A; SOT143; 250mW
Mounting: SMD
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky switching
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
на замовлення 2015 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.24 грн |
| 45+ | 8.23 грн |
| 100+ | 7.27 грн |
| 135+ | 6.49 грн |
| 360+ | 6.14 грн |
| BAS7004E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT23; 250mW
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT23; 250mW
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
на замовлення 4915 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.81 грн |
| 100+ | 5.69 грн |
| 210+ | 4.14 грн |
| 570+ | 3.92 грн |
| BAS7007E6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT143; 250mW
Mounting: SMD
Case: SOT143
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT143; 250mW
Mounting: SMD
Case: SOT143
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
на замовлення 2684 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11 грн |
| 100+ | 7.72 грн |
| 150+ | 5.73 грн |
| 415+ | 5.44 грн |
| BAT1704E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 4V; 0.13A; SOT23; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT23
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 4V; 0.13A; SOT23; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT23
Power dissipation: 0.15W
на замовлення 2989 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.24 грн |
| 46+ | 8.16 грн |
| 100+ | 7.2 грн |
| 136+ | 6.32 грн |
| 374+ | 5.95 грн |
| BAT6405E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 5920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.24 грн |
| 37+ | 10.07 грн |
| 54+ | 6.91 грн |
| 100+ | 5.92 грн |
| 245+ | 3.54 грн |
| 672+ | 3.35 грн |
| BAT6406E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT23; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common anode; double
Case: SOT23
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 3795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.24 грн |
| 38+ | 9.92 грн |
| 46+ | 8.08 грн |
| 100+ | 5.93 грн |
| 258+ | 3.36 грн |
| 708+ | 3.17 грн |
| BAT1503WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 4V; 0.11A; SOD323; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Case: SOD323
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 4V; 0.11A; SOD323; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: single diode
Case: SOD323
Power dissipation: 0.1W
на замовлення 6769 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.02 грн |
| 25+ | 16.9 грн |
| 66+ | 13.01 грн |
| 181+ | 12.27 грн |
| 3000+ | 12.05 грн |
| BAS3010A03WE6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD323
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
на замовлення 3612 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.49 грн |
| 22+ | 16.9 грн |
| 27+ | 14.11 грн |
| 35+ | 10.58 грн |
| 100+ | 9.7 грн |
| 120+ | 7.13 грн |
| 330+ | 6.76 грн |
| 1000+ | 6.61 грн |
| 3000+ | 6.54 грн |
| BGX50AE6327 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.14A
Semiconductor structure: bridge rectifier
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT143
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.14A; SOT143; 210mW; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.14A
Semiconductor structure: bridge rectifier
Power dissipation: 0.21W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT143
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.13 грн |
| 100+ | 8.45 грн |
| 133+ | 6.54 грн |
| 364+ | 6.17 грн |
| SMBTA42E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Frequency: 70MHz
Collector-emitter voltage: 300V
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.36W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: bipolar
Frequency: 70MHz
Collector-emitter voltage: 300V
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.36W
товар відсутній
| BAS40E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; 250mW
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT23
Max. off-state voltage: 40V
Load current: 0.12A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; 250mW
Semiconductor structure: single diode
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT23
Max. off-state voltage: 40V
Load current: 0.12A
товар відсутній
| BF771E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT23
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 80mA
Type of transistor: NPN
Power dissipation: 0.58W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT23
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT23
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 70...140
Collector current: 80mA
Type of transistor: NPN
Power dissipation: 0.58W
Polarisation: bipolar
Kind of transistor: RF
Mounting: SMD
Case: SOT23
Frequency: 8GHz
товар відсутній
| BFP196E6327HTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 7.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 7.5GHz
товар відсутній