Технічний опис IRFH5302DTRPBF Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: PQFN (5x6) Single Die, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V.
Інші пропозиції IRFH5302DTRPBF
| Фото | Назва | Виробник | Інформація |
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IRFH5302DTRPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R |
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IRFH5302DTRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 29A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 кількість в упаковці: 4000 шт |
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| IRFH5302DTRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 29A/100A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V |
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| IRFH5302DTRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 29A/100A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V |
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IRFH5302DTRPBF | Виробник : Infineon Technologies |
MOSFET 20V DUAL N / P CH 2.5mOhms 26nC |
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IRFH5302DTRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 29A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
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