Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99813) > Сторінка 1473 з 1664
| Фото | Назва | Виробник | Інформація |
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| RQ5L030SNTL | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ5L035GNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ5P010SNTL | ROHM SEMICONDUCTOR |
RQ5P010SNTL SMD N channel transistors |
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| RQ6A050ZPTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5A On-state resistance: 88mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -20A Mounting: SMD Case: TSMT6 кількість в упаковці: 1 шт |
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| RQ6E035ATTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET кількість в упаковці: 5 шт |
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| RQ6E045BNTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 49mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ6E050ATTCR | ROHM SEMICONDUCTOR |
RQ6E050ATTCR SMD P channel transistors |
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| RQ6E055BNTCR | ROHM SEMICONDUCTOR |
RQ6E055BNTCR SMD N channel transistors |
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| RQ6E080AJTCR | ROHM SEMICONDUCTOR |
RQ6E080AJTCR SMD N channel transistors |
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| RQ6E085BNTCR | ROHM SEMICONDUCTOR |
RQ6E085BNTCR SMD N channel transistors |
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| RQ6L020SPTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Drain-source voltage: -60V Drain current: -2A On-state resistance: 266mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A кількість в упаковці: 1 шт |
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| RQ6L035ATTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; Idm: -14A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Power dissipation: 1.25W Kind of package: reel; tape On-state resistance: 87mΩ Gate charge: 22nC Type of transistor: P-MOSFET Drain current: -6.5A Drain-source voltage: -60V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Polarisation: unipolar кількість в упаковці: 1 шт |
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| RQ6P015SPTR | ROHM SEMICONDUCTOR |
RQ6P015SPTR SMD P channel transistors |
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RR264MM-400TR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 25A Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Case: SOD123F Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A кількість в упаковці: 5 шт |
на замовлення 2660 шт: термін постачання 14-21 дні (днів) |
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| RR601BM4SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.1V Case: DPAK Kind of package: reel; tape Max. forward impulse current: 40A кількість в упаковці: 1 шт |
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| RR601BM4STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.1V Case: DPAK Kind of package: reel; tape Max. forward impulse current: 40A кількість в упаковці: 1 шт |
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RRD07MM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.7A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.98V Max. forward impulse current: 150A Kind of package: reel; tape кількість в упаковці: 5 шт |
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| RRE02VSM4STR | ROHM SEMICONDUCTOR |
RRE02VSM4STR SMD universal diodes |
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| RRE02VSM6STR | ROHM SEMICONDUCTOR |
RRE02VSM6STR SMD universal diodes |
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| RRE02VTM4SFHTR | ROHM SEMICONDUCTOR |
RRE02VTM4SFHTR SMD universal diodes |
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| RRE02VTM6SFHTR | ROHM SEMICONDUCTOR |
RRE02VTM6SFHTR SMD universal diodes |
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| RRE04EA4DFHTR | ROHM SEMICONDUCTOR |
RRE04EA4DFHTR SMD universal diodes |
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| RRE04EA6DTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.4A; SOT25T; Ufmax: 1.1V; Ifsm: 2A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Case: SOT25T Semiconductor structure: double independent Load current: 0.4A Max. forward impulse current: 2A Max. off-state voltage: 0.6kV кількість в упаковці: 1 шт |
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| RRE07VSM4STR | ROHM SEMICONDUCTOR |
RRE07VSM4STR SMD universal diodes |
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| RRE07VSM6STR | ROHM SEMICONDUCTOR |
RRE07VSM6STR SMD universal diodes |
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| RRE07VTM4SFHTR | ROHM SEMICONDUCTOR |
RRE07VTM4SFHTR SMD universal diodes |
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| RRE07VTM6SFHTR | ROHM SEMICONDUCTOR |
RRE07VTM6SFHTR SMD universal diodes |
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RRF015P03TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 0.8W; SOT323F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 0.8W Case: SOT323F Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 3.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
на замовлення 1065 шт: термін постачання 14-21 дні (днів) |
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RRH050P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8 Power dissipation: 2W Case: SOP8 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Pulsed drain current: -20A Gate charge: 17nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 50mΩ кількість в упаковці: 1 шт |
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RRH090P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8 Mounting: SMD Drain-source voltage: -30V Drain current: -9A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Case: SOP8 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -36A кількість в упаковці: 1 шт |
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RRH100P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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RRH100P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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RRH140P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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RRH140P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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RRL035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Application: automotive industry Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 50mΩ Drain current: -3.5A Kind of package: reel; tape Drain-source voltage: -30V Features of semiconductor devices: ESD protected gate Gate charge: 14nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Power dissipation: 1W кількість в упаковці: 1 шт |
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RRL035P03TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 50mΩ Drain current: -3.5A Kind of package: reel; tape Drain-source voltage: -30V Features of semiconductor devices: ESD protected gate Gate charge: 8nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Power dissipation: 1W кількість в упаковці: 1 шт |
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| RRQ030P03FRATR | ROHM SEMICONDUCTOR | RRQ030P03FRATR SMD P channel transistors |
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| RRR030P03FRATL | ROHM SEMICONDUCTOR | RRR030P03FRATL SMD P channel transistors |
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RRR030P03HZGTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346 Mounting: SMD Case: SOT346 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -3A On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| RRR040P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346 Mounting: SMD Application: automotive industry On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16A Case: SOT346 Drain-source voltage: -30V Drain current: -4A кількість в упаковці: 1 шт |
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RRS100P03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -10A Pulsed drain current: -40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| RS1E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 60A Power dissipation: 22W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RS1E220ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -76A Pulsed drain current: -88A Power dissipation: 34W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| RS1E280BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Mounting: SMD Case: HSOP8 Drain current: 80A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: reel; tape Gate charge: 94nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 112A Drain-source voltage: 30V кількість в упаковці: 1 шт |
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| RS1E280GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Mounting: SMD Case: HSOP8 Drain current: 80A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 112A Drain-source voltage: 30V кількість в упаковці: 1 шт |
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| RS1E301GNTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8 Mounting: SMD Case: HSOP8 Drain current: 80A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Power dissipation: 33W Polarisation: unipolar Kind of package: reel; tape Gate charge: 39.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Drain-source voltage: 30V кількість в упаковці: 1 шт |
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| RS1E321GNTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8 Mounting: SMD Case: HSOP8 Drain current: 80A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 34W Polarisation: unipolar Kind of package: reel; tape Gate charge: 42.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 128A Drain-source voltage: 30V кількість в упаковці: 2500 шт |
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| RS1E350BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Drain current: 80A On-state resistance: 2.5mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 185nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 140A Drain-source voltage: 30V кількість в упаковці: 2500 шт |
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| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Power dissipation: 25W Kind of package: reel; tape Pulsed drain current: 48A Drain-source voltage: 40V Drain current: 34A On-state resistance: 20.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.4nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Power dissipation: 25W Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 40V Drain current: 43A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| RS1G180MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8 Mounting: SMD Case: HSOP8 Power dissipation: 30W Kind of package: reel; tape Pulsed drain current: 72A Drain-source voltage: 40V Drain current: 57A On-state resistance: 9.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 19.5nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Power dissipation: 40W Kind of package: reel; tape Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -78A On-state resistance: 6.5mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 130nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2500 шт |
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| RS1G260MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Power dissipation: 35W Kind of package: reel; tape Pulsed drain current: 104A Drain-source voltage: 40V Drain current: 80A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2500 шт |
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| RS1G300GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Power dissipation: 35W Kind of package: reel; tape Pulsed drain current: 120A Drain-source voltage: 40V Drain current: 80A On-state resistance: 3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 56.8nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2500 шт |
товар відсутній |
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| RS1L120GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 48A Power dissipation: 27W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 19.8mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RS1L145GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 58A Power dissipation: 31W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 14.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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| RS1L151ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -56A; Idm: -60A; 40W; HSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -56A Pulsed drain current: -60A Power dissipation: 40W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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| RS1L180GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Pulsed drain current: 72A Power dissipation: 39W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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| RS1P600BETB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 70A Power dissipation: 35W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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|
RS3E075ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.5A Pulsed drain current: -30A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| RQ5L030SNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ5L035GNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ6A050ZPTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -20A
Mounting: SMD
Case: TSMT6
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -20A
Mounting: SMD
Case: TSMT6
кількість в упаковці: 1 шт
товар відсутній
| RQ6E035ATTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
товар відсутній
| RQ6E045BNTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ6L020SPTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 266mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 266mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
кількість в упаковці: 1 шт
товар відсутній
| RQ6L035ATTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; Idm: -14A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Power dissipation: 1.25W
Kind of package: reel; tape
On-state resistance: 87mΩ
Gate charge: 22nC
Type of transistor: P-MOSFET
Drain current: -6.5A
Drain-source voltage: -60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; Idm: -14A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Power dissipation: 1.25W
Kind of package: reel; tape
On-state resistance: 87mΩ
Gate charge: 22nC
Type of transistor: P-MOSFET
Drain current: -6.5A
Drain-source voltage: -60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| RR264MM-400TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 25A
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 25A
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
кількість в упаковці: 5 шт
на замовлення 2660 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.06 грн |
| 40+ | 7.57 грн |
| 100+ | 6.68 грн |
| 210+ | 4.92 грн |
| 570+ | 4.66 грн |
| RR601BM4SFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
кількість в упаковці: 1 шт
товар відсутній
| RR601BM4STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
кількість в упаковці: 1 шт
товар відсутній
| RRD07MM4STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.7A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.98V
Max. forward impulse current: 150A
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.7A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.98V
Max. forward impulse current: 150A
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| RRE04EA6DTR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.4A; SOT25T; Ufmax: 1.1V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOT25T
Semiconductor structure: double independent
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.4A; SOT25T; Ufmax: 1.1V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOT25T
Semiconductor structure: double independent
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 0.6kV
кількість в упаковці: 1 шт
товар відсутній
| RRF015P03TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 0.8W; SOT323F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.8W
Case: SOT323F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 0.8W; SOT323F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.8W
Case: SOT323F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
на замовлення 1065 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.76 грн |
| 25+ | 13.5 грн |
| 100+ | 10.26 грн |
| 275+ | 9.7 грн |
| RRH050P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
кількість в упаковці: 1 шт
товар відсутній
| RRH090P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Case: SOP8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Case: SOP8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
кількість в упаковці: 1 шт
товар відсутній
| RRH100P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| RRH100P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| RRH140P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| RRH140P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| RRL035P03FRATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 50mΩ
Drain current: -3.5A
Kind of package: reel; tape
Drain-source voltage: -30V
Features of semiconductor devices: ESD protected gate
Gate charge: 14nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Power dissipation: 1W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 50mΩ
Drain current: -3.5A
Kind of package: reel; tape
Drain-source voltage: -30V
Features of semiconductor devices: ESD protected gate
Gate charge: 14nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Power dissipation: 1W
кількість в упаковці: 1 шт
товар відсутній
| RRL035P03TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 50mΩ
Drain current: -3.5A
Kind of package: reel; tape
Drain-source voltage: -30V
Features of semiconductor devices: ESD protected gate
Gate charge: 8nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Power dissipation: 1W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 50mΩ
Drain current: -3.5A
Kind of package: reel; tape
Drain-source voltage: -30V
Features of semiconductor devices: ESD protected gate
Gate charge: 8nC
Case: SOT363
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Power dissipation: 1W
кількість в упаковці: 1 шт
товар відсутній
| RRR030P03HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346
Mounting: SMD
Case: SOT346
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; SOT346
Mounting: SMD
Case: SOT346
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 47.31 грн |
| 10+ | 39.69 грн |
| 56+ | 18.49 грн |
| 153+ | 17.47 грн |
| 3000+ | 17.13 грн |
| 6000+ | 16.78 грн |
| RRR040P03FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346
Mounting: SMD
Application: automotive industry
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -16A
Case: SOT346
Drain-source voltage: -30V
Drain current: -4A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346
Mounting: SMD
Application: automotive industry
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -16A
Case: SOT346
Drain-source voltage: -30V
Drain current: -4A
кількість в упаковці: 1 шт
товар відсутній
| RRS100P03HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -10A
Pulsed drain current: -40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| RS1E150GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RS1E220ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -76A
Pulsed drain current: -88A
Power dissipation: 34W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -76A
Pulsed drain current: -88A
Power dissipation: 34W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RS1E280BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 94nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 94nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
товар відсутній
| RS1E280GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 112A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
товар відсутній
| RS1E301GNTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 39.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 39.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
товар відсутній
| RS1E321GNTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 128A
Drain-source voltage: 30V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 42.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 128A
Drain-source voltage: 30V
кількість в упаковці: 2500 шт
товар відсутній
| RS1E350BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 185nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 140A
Drain-source voltage: 30V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Drain current: 80A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 185nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 140A
Drain-source voltage: 30V
кількість в упаковці: 2500 шт
товар відсутній
| RS1G120MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 25W
Kind of package: reel; tape
Pulsed drain current: 48A
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 20.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 25W
Kind of package: reel; tape
Pulsed drain current: 48A
Drain-source voltage: 40V
Drain current: 34A
On-state resistance: 20.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| RS1G150MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 25W
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 25W
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 43A
On-state resistance: 13.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| RS1G180MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 30W
Kind of package: reel; tape
Pulsed drain current: 72A
Drain-source voltage: 40V
Drain current: 57A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 30W
Kind of package: reel; tape
Pulsed drain current: 72A
Drain-source voltage: 40V
Drain current: 57A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 19.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| RS1G201ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 40W
Kind of package: reel; tape
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -78A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 130nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 40W
Kind of package: reel; tape
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -78A
On-state resistance: 6.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 130nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
| RS1G260MNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 35W
Kind of package: reel; tape
Pulsed drain current: 104A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 35W
Kind of package: reel; tape
Pulsed drain current: 104A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 4.4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
| RS1G300GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 35W
Kind of package: reel; tape
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Power dissipation: 35W
Kind of package: reel; tape
Pulsed drain current: 120A
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
| RS1L120GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 27W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 19.8mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 27W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 19.8mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RS1L145GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 58A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 14.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 58A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 14.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RS1L151ATTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -56A; Idm: -60A; 40W; HSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -56A
Pulsed drain current: -60A
Power dissipation: 40W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -56A; Idm: -60A; 40W; HSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -56A
Pulsed drain current: -60A
Power dissipation: 40W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RS1L180GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Pulsed drain current: 72A
Power dissipation: 39W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Pulsed drain current: 72A
Power dissipation: 39W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RS1P600BETB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 70A
Power dissipation: 35W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 70A
Power dissipation: 35W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RS3E075ATTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.5A
Pulsed drain current: -30A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній