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RRL035P03TR Rohm Semiconductor
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Description: MOSFET P-CH 30V 3.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.21 грн |
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Технічний опис RRL035P03TR Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TUMT6, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V.
Інші пропозиції RRL035P03TR за ціною від 8.36 грн до 32.8 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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RRL035P03TR | Виробник : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
на замовлення 7581 шт: термін постачання 21-31 дні (днів) |
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RRL035P03TR | Виробник : ROHM Semiconductor |
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на замовлення 4470 шт: термін постачання 21-30 дні (днів) |
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RRL035P03TR |
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на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
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RRL035P03TR | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 50mΩ Drain current: -3.5A Kind of package: reel; tape Drain-source voltage: -30V Features of semiconductor devices: ESD protected gate Gate charge: 8nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Power dissipation: 1W кількість в упаковці: 1 шт |
товар відсутній |
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RRL035P03TR | Виробник : ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 50mΩ Drain current: -3.5A Kind of package: reel; tape Drain-source voltage: -30V Features of semiconductor devices: ESD protected gate Gate charge: 8nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Power dissipation: 1W |
товар відсутній |