Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99813) > Сторінка 1472 з 1664
| Фото | Назва | Виробник | Інформація |
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RJU003N03FRAT106 | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W Mounting: SMD Drain-source voltage: 30V Drain current: 0.3A On-state resistance: 1.1Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 1.2A Case: SC70; SOT323 кількість в упаковці: 1 шт |
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| RK7002AT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SST3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
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| RK7002BMHZGT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.35W Case: SST3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RK7002BMT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 200/350mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 2580 шт: термін постачання 14-21 дні (днів) |
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RN141CMT2R | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF Max. off-state voltage: 50V Load current: 0.1A Case: SOD923 Kind of package: reel; tape Max. forward voltage: 1V Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Capacitance: 0.8pF Semiconductor structure: single diode Leakage current: 0.1µA кількість в упаковці: 1 шт |
на замовлення 7820 шт: термін постачання 14-21 дні (днів) |
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RN142SMT2R | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 60V Load current: 0.1A Case: SC79; SOD523 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.45pF кількість в упаковці: 20 шт |
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RN731VTE-17 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.4pF кількість в упаковці: 5 шт |
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RN739DT146 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; 100mW; SC59,SOT346; double series Mounting: SMD Case: SC59; SOT346 Capacitance: 0.4pF Max. off-state voltage: 50V Max. forward voltage: 1V Load current: 50mA Semiconductor structure: double series Leakage current: 0.1µA Power dissipation: 0.1W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF кількість в упаковці: 5 шт |
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RN739FT106 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series Mounting: SMD Case: SC70; SOT323 Capacitance: 0.4pF Max. off-state voltage: 50V Max. forward voltage: 1V Load current: 50mA Semiconductor structure: double series Leakage current: 0.1µA Power dissipation: 0.1W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF кількість в упаковці: 1 шт |
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RN771VTE-17 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.9pF кількість в упаковці: 5 шт |
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RN779FT106 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SC70,SOT323; double series; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC70; SOT323 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.9pF кількість в упаковці: 5 шт |
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| RQ1A060ZPTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -24A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6A Pulsed drain current: -24A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 78mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ1A070APTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 48mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ1A070ZPFRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 38mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ1C075UNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 30A; 1.5W; TSMT8 Mounting: SMD Kind of package: reel; tape Gate charge: 18nC Case: TSMT8 Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 30A Polarisation: unipolar Power dissipation: 1.5W Type of transistor: N-MOSFET On-state resistance: 40mΩ Drain current: 7.5A Drain-source voltage: 20V кількість в упаковці: 1 шт |
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| RQ1E070RPTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ1E075XNTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 1.5W; TSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ3C150BCTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -37A; Idm: -60A; 20W; HSMT8 Power dissipation: 20W Mounting: SMD Kind of package: reel; tape Case: HSMT8 Drain-source voltage: -20V Drain current: -37A On-state resistance: 14mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A кількість в упаковці: 1 шт |
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| RQ3E070BNTB | ROHM SEMICONDUCTOR |
RQ3E070BNTB SMD N channel transistors |
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| RQ3E075ATTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -30A; 15W; HSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -18A Pulsed drain current: -30A Power dissipation: 15W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ3E080BNTB | ROHM SEMICONDUCTOR |
RQ3E080BNTB SMD N channel transistors |
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| RQ3E080GNTB | ROHM SEMICONDUCTOR |
RQ3E080GNTB SMD N channel transistors |
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| RQ3E100BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 40A Power dissipation: 15W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ3E110AJTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 44A; 15W; HSMT8 Mounting: SMD Kind of package: reel; tape Power dissipation: 15W Polarisation: unipolar Case: HSMT8 Gate charge: 13.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 44A Drain-source voltage: 30V Drain current: 24A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| RQ3E120ATTB | ROHM SEMICONDUCTOR |
RQ3E120ATTB SMD P channel transistors |
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| RQ3E120GNTB | ROHM SEMICONDUCTOR |
RQ3E120GNTB SMD N channel transistors |
на замовлення 2975 шт: термін постачання 14-21 дні (днів) |
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| RQ3E130BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 52A; 16W; HSMT8 Case: HSMT8 Kind of package: reel; tape Mounting: SMD Drain-source voltage: 30V Drain current: 39A On-state resistance: 9.4mΩ Type of transistor: N-MOSFET Power dissipation: 16W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 52A кількість в упаковці: 1 шт |
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| RQ3E150BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8 Drain-source voltage: 30V Drain current: 39A Case: HSMT8 Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 60A Power dissipation: 17W Kind of channel: enhanced Gate charge: 45nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| RQ3E150GNTB | ROHM SEMICONDUCTOR |
RQ3E150GNTB SMD N channel transistors |
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| RQ3E160ADTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 64A; 2W; HSMT8 Case: HSMT8 Mounting: SMD On-state resistance: 7mΩ Kind of package: reel; tape Power dissipation: 2W Pulsed drain current: 64A Drain-source voltage: 30V Drain current: 16A Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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RQ3E180AJTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Mounting: SMD Case: HSMT8 Drain current: 30A On-state resistance: 5.8mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: reel; tape Gate charge: 39nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 72A Drain-source voltage: 30V кількість в упаковці: 1 шт |
на замовлення 2936 шт: термін постачання 14-21 дні (днів) |
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| RQ3E180BNTB | ROHM SEMICONDUCTOR |
RQ3E180BNTB SMD N channel transistors |
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| RQ3E180GNTB | ROHM SEMICONDUCTOR |
RQ3E180GNTB SMD N channel transistors |
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| RQ3G100GNTB | ROHM SEMICONDUCTOR |
RQ3G100GNTB SMD N channel transistors |
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| RQ3G150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8 Power dissipation: 20W Case: HSMT8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Gate charge: 24.1nC Polarisation: unipolar Drain current: 39A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.9mΩ кількість в упаковці: 1 шт |
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| RQ3L050GNTB | ROHM SEMICONDUCTOR | RQ3L050GNTB SMD N channel transistors |
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| RQ3L070ATTB | ROHM SEMICONDUCTOR |
RQ3L070ATTB SMD P channel transistors |
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| RQ3L090GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 36A Power dissipation: 20W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 21.4mΩ Mounting: SMD Gate charge: 24.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| RQ3P300BHTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 40A; 32W; HSMT8 Kind of package: reel; tape Mounting: SMD Drain-source voltage: 100V Drain current: 39A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: HSMT8 кількість в упаковці: 3000 шт |
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| RQ5A020ZPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; Idm: -6A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -6A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±10V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| RQ5A030APTL | ROHM SEMICONDUCTOR |
RQ5A030APTL SMD P channel transistors |
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| RQ5A040ZPTL | ROHM SEMICONDUCTOR |
RQ5A040ZPTL SMD P channel transistors |
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| RQ5C035BCTCL | ROHM SEMICONDUCTOR |
RQ5C035BCTCL SMD P channel transistors |
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| RQ5C060BCTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -18A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±8V On-state resistance: 51mΩ Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RQ5E015RPTL | ROHM SEMICONDUCTOR | RQ5E015RPTL SMD P channel transistors |
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| RQ5E025TNTL | ROHM SEMICONDUCTOR |
RQ5E025TNTL SMD N channel transistors |
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| RQ5E030AJTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 6A; 1W; TSMT3 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 6A Case: TSMT3 Drain-source voltage: 30V Drain current: 3A On-state resistance: 109mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| RQ5E030RPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; TSMT3 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Case: TSMT3 Drain-source voltage: -30V Drain current: -3A On-state resistance: 0.125Ω Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| RQ5E035ATTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET кількість в упаковці: 5 шт |
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| RQ5E035BNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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| RQ5E040AJTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Drain-source voltage: 30V Drain current: 4A On-state resistance: 54mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A кількість в упаковці: 1 шт |
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| RQ5E040TNTL | ROHM SEMICONDUCTOR |
RQ5E040TNTL SMD N channel transistors |
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| RQ5E050ATTCL | ROHM SEMICONDUCTOR | RQ5E050ATTCL SMD P channel transistors |
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| RQ5E070BNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 18A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RQ5H020SPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Drain-source voltage: -45V Drain current: -2A On-state resistance: 0.28Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A кількість в упаковці: 1 шт |
на замовлення 2842 шт: термін постачання 14-21 дні (днів) |
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| RQ5H020TNTL | ROHM SEMICONDUCTOR |
RQ5H020TNTL SMD N channel transistors |
товар відсутній |
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| RQ5H025TNTL | ROHM SEMICONDUCTOR |
RQ5H025TNTL SMD N channel transistors |
товар відсутній |
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| RQ5H030TNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Mounting: SMD Gate charge: 6.2nC Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Power dissipation: 1W Pulsed drain current: 12A Type of transistor: N-MOSFET Gate-source voltage: ±12V Drain-source voltage: 45V Drain current: 3A On-state resistance: 95mΩ |
товар відсутній |
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| RQ5L015SPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RQ5L020SNTL | ROHM SEMICONDUCTOR |
RQ5L020SNTL SMD N channel transistors |
товар відсутній |
| RJU003N03FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 0.3A
On-state resistance: 1.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1.2A
Case: SC70; SOT323
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 0.3A
On-state resistance: 1.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1.2A
Case: SC70; SOT323
кількість в упаковці: 1 шт
товар відсутній
| RK7002AT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
| RK7002BMHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RK7002BMT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 200/350mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 200/350mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 2580 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.19 грн |
| 25+ | 11.13 грн |
| 50+ | 6.01 грн |
| 100+ | 5 грн |
| 481+ | 2.13 грн |
| 1322+ | 2.09 грн |
| RN141CMT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD923
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.8pF
Semiconductor structure: single diode
Leakage current: 0.1µA
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD923
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Capacitance: 0.8pF
Semiconductor structure: single diode
Leakage current: 0.1µA
кількість в упаковці: 1 шт
на замовлення 7820 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 16.08 грн |
| 25+ | 11.22 грн |
| 100+ | 7.82 грн |
| 199+ | 5.1 грн |
| 547+ | 4.83 грн |
| RN142SMT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 60V
Load current: 0.1A
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.45pF
кількість в упаковці: 20 шт
Category: Diodes - others
Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 60V
Load current: 0.1A
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.45pF
кількість в упаковці: 20 шт
товар відсутній
| RN731VTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.4pF
кількість в упаковці: 5 шт
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.4pF
кількість в упаковці: 5 шт
товар відсутній
| RN739DT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC59,SOT346; double series
Mounting: SMD
Case: SC59; SOT346
Capacitance: 0.4pF
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: double series
Leakage current: 0.1µA
Power dissipation: 0.1W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
кількість в упаковці: 5 шт
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC59,SOT346; double series
Mounting: SMD
Case: SC59; SOT346
Capacitance: 0.4pF
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: double series
Leakage current: 0.1µA
Power dissipation: 0.1W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
кількість в упаковці: 5 шт
товар відсутній
| RN739FT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series
Mounting: SMD
Case: SC70; SOT323
Capacitance: 0.4pF
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: double series
Leakage current: 0.1µA
Power dissipation: 0.1W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
кількість в упаковці: 1 шт
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series
Mounting: SMD
Case: SC70; SOT323
Capacitance: 0.4pF
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: double series
Leakage current: 0.1µA
Power dissipation: 0.1W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
кількість в упаковці: 1 шт
товар відсутній
| RN771VTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
кількість в упаковці: 5 шт
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
кількість в упаковці: 5 шт
товар відсутній
| RN779FT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC70,SOT323; double series; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70; SOT323
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
кількість в упаковці: 5 шт
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC70,SOT323; double series; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70; SOT323
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
кількість в упаковці: 5 шт
товар відсутній
| RQ1A060ZPTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -24A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -24A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ1A070APTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ1A070ZPFRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ1C075UNTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 30A; 1.5W; TSMT8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 18nC
Case: TSMT8
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 30A
Polarisation: unipolar
Power dissipation: 1.5W
Type of transistor: N-MOSFET
On-state resistance: 40mΩ
Drain current: 7.5A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 30A; 1.5W; TSMT8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 18nC
Case: TSMT8
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 30A
Polarisation: unipolar
Power dissipation: 1.5W
Type of transistor: N-MOSFET
On-state resistance: 40mΩ
Drain current: 7.5A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
| RQ1E070RPTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ1E075XNTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ3C150BCTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -37A; Idm: -60A; 20W; HSMT8
Power dissipation: 20W
Mounting: SMD
Kind of package: reel; tape
Case: HSMT8
Drain-source voltage: -20V
Drain current: -37A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -37A; Idm: -60A; 20W; HSMT8
Power dissipation: 20W
Mounting: SMD
Kind of package: reel; tape
Case: HSMT8
Drain-source voltage: -20V
Drain current: -37A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
кількість в упаковці: 1 шт
товар відсутній
| RQ3E075ATTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -30A; 15W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -30A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; Idm: -30A; 15W; HSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Pulsed drain current: -30A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ3E100BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ3E110AJTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 44A; 15W; HSMT8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 15W
Polarisation: unipolar
Case: HSMT8
Gate charge: 13.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 44A
Drain-source voltage: 30V
Drain current: 24A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 44A; 15W; HSMT8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 15W
Polarisation: unipolar
Case: HSMT8
Gate charge: 13.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 44A
Drain-source voltage: 30V
Drain current: 24A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RQ3E120GNTB |
|
Виробник: ROHM SEMICONDUCTOR
RQ3E120GNTB SMD N channel transistors
RQ3E120GNTB SMD N channel transistors
на замовлення 2975 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 25.17 грн |
| 62+ | 16.52 грн |
| 171+ | 15.64 грн |
| RQ3E130BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 52A; 16W; HSMT8
Case: HSMT8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 30V
Drain current: 39A
On-state resistance: 9.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 16W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 52A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 52A; 16W; HSMT8
Case: HSMT8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 30V
Drain current: 39A
On-state resistance: 9.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 16W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 52A
кількість в упаковці: 1 шт
товар відсутній
| RQ3E150BNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Drain-source voltage: 30V
Drain current: 39A
Case: HSMT8
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 60A
Power dissipation: 17W
Kind of channel: enhanced
Gate charge: 45nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Drain-source voltage: 30V
Drain current: 39A
Case: HSMT8
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 60A
Power dissipation: 17W
Kind of channel: enhanced
Gate charge: 45nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RQ3E160ADTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 64A; 2W; HSMT8
Case: HSMT8
Mounting: SMD
On-state resistance: 7mΩ
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 64A
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 64A; 2W; HSMT8
Case: HSMT8
Mounting: SMD
On-state resistance: 7mΩ
Kind of package: reel; tape
Power dissipation: 2W
Pulsed drain current: 64A
Drain-source voltage: 30V
Drain current: 16A
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 51nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
| RQ3E180AJTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Mounting: SMD
Case: HSMT8
Drain current: 30A
On-state resistance: 5.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 39nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 72A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Mounting: SMD
Case: HSMT8
Drain current: 30A
On-state resistance: 5.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 39nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 72A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
на замовлення 2936 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.42 грн |
| 10+ | 69.34 грн |
| 25+ | 60.09 грн |
| 38+ | 27.15 грн |
| 104+ | 25.74 грн |
| 250+ | 25.65 грн |
| RQ3G150GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
кількість в упаковці: 1 шт
товар відсутній
| RQ3L090GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 36A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 36A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| RQ3P300BHTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 40A; 32W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 39A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: HSMT8
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 40A; 32W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 39A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: HSMT8
кількість в упаковці: 3000 шт
товар відсутній
| RQ5A020ZPTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; Idm: -6A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -6A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; Idm: -6A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -6A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| RQ5C060BCTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±8V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±8V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ5E030AJTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 6A; 1W; TSMT3
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6A
Case: TSMT3
Drain-source voltage: 30V
Drain current: 3A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 6A; 1W; TSMT3
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6A
Case: TSMT3
Drain-source voltage: 30V
Drain current: 3A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RQ5E030RPTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; TSMT3
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: TSMT3
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 0.125Ω
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; TSMT3
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: TSMT3
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 0.125Ω
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RQ5E035ATTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 5 шт
товар відсутній
| RQ5E035BNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| RQ5E040AJTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 16A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 16A
кількість в упаковці: 1 шт
товар відсутній
| RQ5E070BNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RQ5H020SPTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Drain-source voltage: -45V
Drain current: -2A
On-state resistance: 0.28Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Drain-source voltage: -45V
Drain current: -2A
On-state resistance: 0.28Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
кількість в упаковці: 1 шт
на замовлення 2842 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 23.94 грн |
| 25+ | 16.79 грн |
| 82+ | 12.65 грн |
| 223+ | 11.95 грн |
| RQ5H030TNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Mounting: SMD
Gate charge: 6.2nC
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 1W
Pulsed drain current: 12A
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Drain-source voltage: 45V
Drain current: 3A
On-state resistance: 95mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Mounting: SMD
Gate charge: 6.2nC
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 1W
Pulsed drain current: 12A
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Drain-source voltage: 45V
Drain current: 3A
On-state resistance: 95mΩ
товар відсутній
| RQ5L015SPTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній