на замовлення 2473 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205 грн |
| 10+ | 169.74 грн |
| 25+ | 139.17 грн |
| 100+ | 119.49 грн |
| 250+ | 113.16 грн |
| 500+ | 106.13 грн |
| 1000+ | 90.67 грн |
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Технічний опис RS1P600BETB1 ROHM Semiconductor
Description: MOSFET N-CH 100V 17.5A/60A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V, Power Dissipation (Max): 3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V.
Інші пропозиції RS1P600BETB1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| RS1P600BETB1 | Виробник : ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 70A Power dissipation: 35W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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RS1P600BETB1 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 100V 17.5A/60A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
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RS1P600BETB1 | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 100V 17.5A/60A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V Power Dissipation (Max): 3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
товар відсутній |
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| RS1P600BETB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 70A Power dissipation: 35W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |