на замовлення 7405 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.14 грн |
| 10+ | 100.05 грн |
| 100+ | 67.68 грн |
| 500+ | 56.48 грн |
| 1000+ | 45.36 грн |
| 2500+ | 44.07 грн |
| 5000+ | 41.86 грн |
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Технічний опис RRH090P03TB1 ROHM Semiconductor
Description: MOSFET P-CH 30V 9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V, Power Dissipation (Max): 650mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V.
Інші пропозиції RRH090P03TB1 за ціною від 50.51 грн до 122.66 грн
| Фото | Назва | Виробник | Інформація |
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RRH090P03TB1 | Виробник : Rohm Semiconductor |
 Description: MOSFET P-CH 30V 9A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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на замовлення 4500 шт: термін постачання 14-28 дні (днів) |
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RRH090P03TB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8 Mounting: SMD Drain-source voltage: -30V Drain current: -9A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Case: SOP8 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -36A кількість в упаковці: 1 шт |
товар відсутній |
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RRH090P03TB1 | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 30V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V |
товар відсутній |
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RRH090P03TB1 | Виробник : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8 Mounting: SMD Drain-source voltage: -30V Drain current: -9A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Case: SOP8 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -36A |
товар відсутній |