Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100320) > Сторінка 1474 з 1672
| Фото | Назва | Виробник | Інформація |
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RSA6.1ENTR | ROHM SEMICONDUCTOR |
 Category: Transil diodes - arraysDescription: Diode: TVS array; 6.1÷7.2V; 200W; quadruple,common anode; SOT353 Type of diode: TVS array Mounting: SMD Semiconductor structure: common anode; quadruple Features of semiconductor devices: ESD protection Case: SOT353 Kind of package: reel; tape Peak pulse power dissipation: 0.2kW Breakdown voltage: 6.1...7.2V кількість в упаковці: 1 шт |
на замовлення 1224 шт: термін постачання 14-21 дні (днів) |
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| RSC002P03T316 | ROHM SEMICONDUCTOR |
RSC002P03T316 SMD P channel transistors |
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| RSF010P05TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -1A; Idm: -4A; 800mW; TUMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -1A Pulsed drain current: -4A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±20V On-state resistance: 0.69Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSF014N03TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 5.6A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSF015N06FRATL | ROHM SEMICONDUCTOR |
RSF015N06FRATL SMD N channel transistors |
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| RSF015N06TL | ROHM SEMICONDUCTOR |
RSF015N06TL SMD N channel transistors |
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RSH065N06GZETB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RSH065N06TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RSH070N05GZETB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RSH070N05TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RSH070P05GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
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RSH070P05TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSJ151P10TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Pulsed drain current: -30A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RSJ250P10FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263 Drain-source voltage: -100V Drain current: -25A On-state resistance: 63mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -50A Mounting: SMD Case: TO263 кількість в упаковці: 1 шт |
на замовлення 318 шт: термін постачання 14-21 дні (днів) |
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| RSJ250P10TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK Drain-source voltage: -100V Drain current: -25A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -50A Mounting: SMD Case: D2PAK кількість в упаковці: 1 шт |
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| RSJ400N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 50W; D2PAK Kind of package: reel; tape Drain-source voltage: 60V Drain current: 40A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: D2PAK кількість в упаковці: 1 шт |
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| RSJ400N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 50W Drain-source voltage: 100V Drain current: 40A On-state resistance: 30mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A кількість в упаковці: 1 шт |
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| RSJ550N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Pulsed drain current: 110A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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| RSJ650N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 130A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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| RSM002N06T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.15W Case: VMT3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
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| RSM002P03T2L | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Case: VMT3 Drain-source voltage: -30V Drain current: -200mA On-state resistance: 2.4Ω Type of transistor: P-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -0.4A Mounting: SMD кількість в упаковці: 5 шт |
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| RSQ015N06TR | ROHM SEMICONDUCTOR |
RSQ015N06TR SMD N channel transistors |
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| RSQ015P10FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -100V Drain current: -1.5A On-state resistance: 0.54Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Power dissipation: 1.25W кількість в упаковці: 1 шт |
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| RSQ015P10HZGTR | ROHM SEMICONDUCTOR |
RSQ015P10HZGTR SMD P channel transistors |
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| RSQ020N03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSQ025P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSQ030N08HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSQ035N06HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 87mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSQ035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSR010N10FHATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSR010N10HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSR015P06FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V кількість в упаковці: 1 шт |
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| RSR015P06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V кількість в упаковці: 1 шт |
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| RSR020N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSR020N06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSR025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 0.118Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar кількість в упаковці: 1 шт |
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| RSR025N03HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Power dissipation: 1W Kind of package: reel; tape On-state resistance: 0.118Ω Polarisation: unipolar Drain current: 2.5A Gate charge: 2.9nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| RSR025P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSR030N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RSR030N06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2586 шт: термін постачання 14-21 дні (днів) |
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RSS060P05FRATB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -45V Drain current: -6A Pulsed drain current: -24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 53mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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RSS090N03FRATB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RSS100N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 40A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RSU002P03T106 | ROHM SEMICONDUCTOR |
RSU002P03T106 SMD P channel transistors |
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| RSX051VAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape Kind of package: reel; tape Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.2mA Type of diode: Schottky rectifying Mounting: SMD Case: SOD323HE кількість в упаковці: 1 шт |
на замовлення 2100 шт: термін постачання 14-21 дні (днів) |
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| RSX051VYM30FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape Case: SOD323HE Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD кількість в упаковці: 10 шт |
товар відсутній |
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RSX101MM-30TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 0.2mA Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 1A кількість в упаковці: 5 шт |
товар відсутній |
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RSX101MM-30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode Max. forward impulse current: 45A Leakage current: 0.2mA Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 0.39V Load current: 1A кількість в упаковці: 5 шт |
товар відсутній |
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| RSX101VAM30TR | ROHM SEMICONDUCTOR |
RSX101VAM30TR SMD Schottky diodes |
товар відсутній |
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| RSX101VYM30FHTR | ROHM SEMICONDUCTOR |
RSX101VYM30FHTR SMD Schottky diodes |
товар відсутній |
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| RSX201VAM30TR | ROHM SEMICONDUCTOR |
RSX201VAM30TR SMD Schottky diodes |
товар відсутній |
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| RSX201VYM30FHTR | ROHM SEMICONDUCTOR |
RSX201VYM30FHTR SMD Schottky diodes |
товар відсутній |
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| RSX205LAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD128 Max. off-state voltage: 30V Max. forward voltage: 0.49V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 0.2mA кількість в упаковці: 5 шт |
товар відсутній |
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| RSX301LAM30TR | ROHM SEMICONDUCTOR |
RSX301LAM30TR SMD Schottky diodes |
товар відсутній |
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| RSX501LAM20TR | ROHM SEMICONDUCTOR |
RSX501LAM20TR SMD Schottky diodes |
товар відсутній |
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| RTF016N05TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 1.6A; Idm: 6.4A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 1.6A Pulsed drain current: 6.4A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RTF025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RTF025N03TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RTL020P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 4.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| RSA6.1ENTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; 200W; quadruple,common anode; SOT353
Type of diode: TVS array
Mounting: SMD
Semiconductor structure: common anode; quadruple
Features of semiconductor devices: ESD protection
Case: SOT353
Kind of package: reel; tape
Peak pulse power dissipation: 0.2kW
Breakdown voltage: 6.1...7.2V
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; 200W; quadruple,common anode; SOT353
Type of diode: TVS array
Mounting: SMD
Semiconductor structure: common anode; quadruple
Features of semiconductor devices: ESD protection
Case: SOT353
Kind of package: reel; tape
Peak pulse power dissipation: 0.2kW
Breakdown voltage: 6.1...7.2V
кількість в упаковці: 1 шт
на замовлення 1224 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 41.64 грн |
| 15+ | 18.96 грн |
| 100+ | 12.77 грн |
| 154+ | 6.83 грн |
| 423+ | 6.47 грн |
| RSF010P05TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -1A; Idm: -4A; 800mW; TUMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -1A
Pulsed drain current: -4A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±20V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -1A; Idm: -4A; 800mW; TUMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -1A
Pulsed drain current: -4A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±20V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSF014N03TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 5.6A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 5.6A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSH065N06GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSH065N06TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSH070N05GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSH070N05TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSH070P05GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSH070P05TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -7A; Idm: -28A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSJ151P10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSJ250P10FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263
Drain-source voltage: -100V
Drain current: -25A
On-state resistance: 63mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Mounting: SMD
Case: TO263
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263
Drain-source voltage: -100V
Drain current: -25A
On-state resistance: 63mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Mounting: SMD
Case: TO263
кількість в упаковці: 1 шт
на замовлення 318 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 146.22 грн |
| 10+ | 115.78 грн |
| 12+ | 89.92 грн |
| 33+ | 84.52 грн |
| 200+ | 81.82 грн |
| 500+ | 80.92 грн |
| RSJ250P10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK
Drain-source voltage: -100V
Drain current: -25A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK
Drain-source voltage: -100V
Drain current: -25A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
товар відсутній
| RSJ400N06FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 50W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 50W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
товар відсутній
| RSJ400N10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 50W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 50W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
кількість в упаковці: 1 шт
товар відсутній
| RSJ550N10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 110A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 110A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| RSJ650N10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| RSM002N06T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.15W
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
| RSM002P03T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Case: VMT3
Drain-source voltage: -30V
Drain current: -200mA
On-state resistance: 2.4Ω
Type of transistor: P-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.4A
Mounting: SMD
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Case: VMT3
Drain-source voltage: -30V
Drain current: -200mA
On-state resistance: 2.4Ω
Type of transistor: P-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.4A
Mounting: SMD
кількість в упаковці: 5 шт
товар відсутній
| RSQ015P10FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Power dissipation: 1.25W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Power dissipation: 1.25W
кількість в упаковці: 1 шт
товар відсутній
| RSQ020N03HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSQ025P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSQ030N08HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSQ035N03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSQ035N06HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSQ035P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSR010N10FHATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSR010N10HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSR015P06FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
кількість в упаковці: 1 шт
товар відсутній
| RSR015P06HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
кількість в упаковці: 1 шт
товар відсутній
| RSR020N06FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSR020N06HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSR025N03FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 0.118Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 0.118Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| RSR025N03HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Power dissipation: 1W
Kind of package: reel; tape
On-state resistance: 0.118Ω
Polarisation: unipolar
Drain current: 2.5A
Gate charge: 2.9nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Power dissipation: 1W
Kind of package: reel; tape
On-state resistance: 0.118Ω
Polarisation: unipolar
Drain current: 2.5A
Gate charge: 2.9nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RSR025P03FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 5.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSR030N06FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSR030N06HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2586 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.67 грн |
| 10+ | 34.55 грн |
| 57+ | 18.43 грн |
| 157+ | 17.44 грн |
| 9000+ | 16.72 грн |
| RSS060P05FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -45V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSS090N03FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSS100N03HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RSX051VAM30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323HE
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323HE
кількість в упаковці: 1 шт
на замовлення 2100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 17.43 грн |
| 27+ | 10.74 грн |
| 50+ | 7.84 грн |
| 100+ | 7 грн |
| 240+ | 4.4 грн |
| 660+ | 4.16 грн |
| 6000+ | 4 грн |
| RSX051VYM30FHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
кількість в упаковці: 10 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SOD323HE; reel,tape
Case: SOD323HE
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
кількість в упаковці: 10 шт
товар відсутній
| RSX101MM-30TFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 1A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 1A
кількість в упаковці: 5 шт
товар відсутній
| RSX101MM-30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 1A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 45A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 0.39V
Load current: 1A
кількість в упаковці: 5 шт
товар відсутній
| RSX205LAM30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 0.2mA
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 0.2mA
кількість в упаковці: 5 шт
товар відсутній
| RTF016N05TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.6A; Idm: 6.4A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 1.6A
Pulsed drain current: 6.4A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.6A; Idm: 6.4A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 1.6A
Pulsed drain current: 6.4A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTF025N03FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTF025N03TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTL020P02FRATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 4.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній