Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99818) > Сторінка 1475 з 1664
| Фото | Назва | Виробник | Інформація |
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| RSX201VYM30FHTR | ROHM SEMICONDUCTOR |
 RSX201VYM30FHTR SMD Schottky diodes |
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| RSX205LAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD128 Max. off-state voltage: 30V Max. forward voltage: 0.49V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 60A Leakage current: 0.2mA кількість в упаковці: 5 шт |
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| RSX301LAM30TR | ROHM SEMICONDUCTOR |
RSX301LAM30TR SMD Schottky diodes |
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| RSX501LAM20TR | ROHM SEMICONDUCTOR |
RSX501LAM20TR SMD Schottky diodes |
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| RTF016N05TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 1.6A; Idm: 6.4A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 1.6A Pulsed drain current: 6.4A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RTF025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RTF025N03TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RTL020P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6 Mounting: SMD Case: TUMT6 Kind of package: reel; tape Power dissipation: 1W Type of transistor: P-MOSFET Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -8A Drain-source voltage: -20V On-state resistance: 0.25Ω Drain current: -2A Polarisation: unipolar Gate charge: 4.9nC кількість в упаковці: 1 шт |
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| RTL035N03TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6 Case: TUMT6 Polarisation: unipolar Pulsed drain current: 14A Power dissipation: 1W Gate charge: 4.6nC Drain current: 3.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 79mΩ Gate-source voltage: ±12V Mounting: SMD кількість в упаковці: 1 шт |
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| RTQ025P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RTQ035P02FHATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RTR020N05HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3 On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSMT3 Drain-source voltage: 45V Drain current: 2A кількість в упаковці: 1 шт |
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| RTR020N05TL | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3 On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSMT3 Drain-source voltage: 45V Drain current: 2A кількість в упаковці: 1 шт |
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| RTR020P02FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TSMT3 On-state resistance: 0.25Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -8A Mounting: SMD Case: TSMT3 Drain-source voltage: -20V Drain current: -2A кількість в упаковці: 1 шт |
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| RTR025N03HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Power dissipation: 1W Kind of package: reel; tape On-state resistance: 0.133Ω Polarisation: unipolar Drain current: 2.5A Gate charge: 3.3nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| RTR025P02FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -2.5A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar кількість в упаковці: 1 шт |
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| RTR030N05FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RTR030N05HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RTR030N05TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RTR030P02FHATL | ROHM SEMICONDUCTOR | RTR030P02FHATL SMD P channel transistors |
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| RTR040N03HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±12V On-state resistance: 66mΩ Mounting: SMD Gate charge: 5.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RU1C001UNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100mA; Idm: 0.4A; 150mW Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Case: SOT323F Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.4A Polarisation: unipolar Power dissipation: 0.15W Type of transistor: N-MOSFET On-state resistance: 5.6Ω Drain current: 0.1A Drain-source voltage: 20V кількість в упаковці: 1 шт |
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RU1C001ZPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -100mA; Idm: -0.4A; 200mW Drain-source voltage: -20V Drain current: -100mA On-state resistance: 6.8Ω Type of transistor: P-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -0.4A Mounting: SMD Case: SOT323F кількість в упаковці: 1 шт |
на замовлення 1659 шт: термін постачання 14-21 дні (днів) |
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| RU1C002UNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; Idm: 0.4A; 150mW Mounting: SMD Kind of package: reel; tape Case: SOT323F Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.4A Polarisation: unipolar Power dissipation: 0.15W Type of transistor: N-MOSFET On-state resistance: 4.8Ω Drain current: 0.2A Drain-source voltage: 20V кількість в упаковці: 20 шт |
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| RU1C002ZPTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -200mA; Idm: -0.8A; 150mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -200mA Pulsed drain current: -0.8A Power dissipation: 0.15W Case: SOT323F Gate-source voltage: ±10V On-state resistance: 9.6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
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RU1E002SPTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -0.5A; 200mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.25A Pulsed drain current: -0.5A Power dissipation: 0.2W Case: SOT323F Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| RU1J002YNTCL | ROHM SEMICONDUCTOR |
RU1J002YNTCL SMD N channel transistors |
на замовлення 969 шт: термін постачання 14-21 дні (днів) |
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| RU1L002SNTL | ROHM SEMICONDUCTOR |
RU1L002SNTL SMD N channel transistors |
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| RUC002N05HZGT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Pulsed drain current: 800A Power dissipation: 0.35W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 50V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SST3 On-state resistance: 7.2Ω Gate-source voltage: ±8V Mounting: SMD кількість в упаковці: 20 шт |
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| RUC002N05T116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Pulsed drain current: 800A Power dissipation: 0.35W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 50V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SST3 On-state resistance: 7.2Ω Gate-source voltage: ±8V Mounting: SMD кількість в упаковці: 20 шт |
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| RUF015N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3 Type of transistor: N-MOSFET Case: TUMT3 Mounting: SMD Power dissipation: 0.8W Kind of package: reel; tape Pulsed drain current: 3A On-state resistance: 0.31Ω Drain-source voltage: 20V Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±10V Drain current: 1.5A кількість в упаковці: 5 шт |
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| RUF020N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 6A кількість в упаковці: 1 шт |
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| RUF025N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Polarisation: unipolar Power dissipation: 0.8W Kind of package: reel; tape Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 5A Mounting: SMD Case: TUMT3 Drain-source voltage: 20V Drain current: 2.5A On-state resistance: 0.16Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| RUF025N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Polarisation: unipolar Power dissipation: 0.8W Kind of package: reel; tape Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 5A Mounting: SMD Case: TUMT3 Drain-source voltage: 20V Drain current: 2.5A On-state resistance: 0.16Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| RUM001L02T2CL | ROHM SEMICONDUCTOR |
RUM001L02T2CL SMD N channel transistors |
на замовлення 170 шт: термін постачання 14-21 дні (днів) |
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| RUM002N02T2L | ROHM SEMICONDUCTOR |
RUM002N02T2L SMD N channel transistors |
на замовлення 740 шт: термін постачання 14-21 дні (днів) |
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RUM002N05T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±8V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 4225 шт: термін постачання 14-21 дні (днів) |
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| RUQ050N02FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RUR020N02TL | ROHM SEMICONDUCTOR |
RUR020N02TL SMD N channel transistors |
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| RUR040N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Mounting: SMD On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 8A Case: TSMT3 Drain-source voltage: 20V Drain current: 4A кількість в упаковці: 1 шт |
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| RUR040N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Mounting: SMD On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 8A Case: TSMT3 Drain-source voltage: 20V Drain current: 4A кількість в упаковці: 1 шт |
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| RV1C001ZPT2L | ROHM SEMICONDUCTOR |
RV1C001ZPT2L SMD P channel transistors |
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| RV1C002UNT2CL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW Mounting: SMD Kind of package: reel; tape Case: X2-DFN0806-3 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.6A Polarisation: unipolar Power dissipation: 0.1W Type of transistor: N-MOSFET On-state resistance: 11.4Ω Drain current: 0.15A Drain-source voltage: 20V кількість в упаковці: 1 шт |
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| RV2C002UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW Mounting: SMD Kind of package: reel; tape Case: DFN1006-3 Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 0.6A Polarisation: unipolar Power dissipation: 0.1W Type of transistor: N-MOSFET On-state resistance: 11.4Ω Drain current: 0.18A Drain-source voltage: 20V кількість в упаковці: 5 шт |
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| RV2C010UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Mounting: SMD Kind of package: reel; tape Case: DFN1006-3 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 2A Polarisation: unipolar Power dissipation: 0.4W Type of transistor: N-MOSFET On-state resistance: 1.05Ω Drain current: 1A Drain-source voltage: 20V кількість в упаковці: 5 шт |
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| RV2C014BCT2CL | ROHM SEMICONDUCTOR |
RV2C014BCT2CL SMD P channel transistors |
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| RV3C002UNT2CL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 600A; 100mW Mounting: SMD Kind of package: reel; tape Case: X2-DFN0604-3 Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 600A Polarisation: unipolar Power dissipation: 0.1W Type of transistor: N-MOSFET On-state resistance: 5.4Ω Drain current: 0.15A Drain-source voltage: 20V кількість в упаковці: 5 шт |
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| RV8L002SNHZGG2CR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 1W; DFN1010-3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 1W Case: DFN1010-3W Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RVQ040N05TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±21V On-state resistance: 74mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RXH090N03TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RXH125N03TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RYC002N05T316 | ROHM SEMICONDUCTOR |
RYC002N05T316 SMD N channel transistors |
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| RYM002N05T2CL | ROHM SEMICONDUCTOR |
RYM002N05T2CL SMD N channel transistors |
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| RZF013P01TL | ROHM SEMICONDUCTOR |
RZF013P01TL SMD P channel transistors |
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| RZF020P01TL | ROHM SEMICONDUCTOR |
RZF020P01TL SMD P channel transistors |
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| RZF030P01TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 800mW; TUMT3 Mounting: SMD Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -12A Case: TUMT3 Drain-source voltage: -12V Drain current: -3A On-state resistance: 144mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| RZM001P02T2L | ROHM SEMICONDUCTOR |
RZM001P02T2L SMD P channel transistors |
на замовлення 492 шт: термін постачання 14-21 дні (днів) |
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| RZM002P02T2L | ROHM SEMICONDUCTOR |
RZM002P02T2L SMD P channel transistors |
на замовлення 6435 шт: термін постачання 14-21 дні (днів) |
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SCS106AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; 65W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Max. load current: 29A Semiconductor structure: single diode Max. forward voltage: 1.7V Case: TO220AC Kind of package: tube Max. forward impulse current: 86A Power dissipation: 65W Heatsink thickness: max. 1.27mm кількість в упаковці: 1 шт |
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SCS108AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; 75W; TO220AC; tube Kind of package: tube Power dissipation: 75W Type of diode: Schottky rectifying Technology: SiC Heatsink thickness: max. 1.27mm Mounting: THT Case: TO220AC Max. off-state voltage: 0.6kV Max. load current: 35A Max. forward voltage: 1.7V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 110A кількість в упаковці: 1 шт |
товар відсутній |
| RSX205LAM30TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 0.2mA
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD128
Max. off-state voltage: 30V
Max. forward voltage: 0.49V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Leakage current: 0.2mA
кількість в упаковці: 5 шт
товар відсутній
| RTF016N05TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.6A; Idm: 6.4A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 1.6A
Pulsed drain current: 6.4A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.6A; Idm: 6.4A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 1.6A
Pulsed drain current: 6.4A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTF025N03FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTF025N03TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTL020P02FRATR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6
Mounting: SMD
Case: TUMT6
Kind of package: reel; tape
Power dissipation: 1W
Type of transistor: P-MOSFET
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Drain-source voltage: -20V
On-state resistance: 0.25Ω
Drain current: -2A
Polarisation: unipolar
Gate charge: 4.9nC
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TUMT6
Mounting: SMD
Case: TUMT6
Kind of package: reel; tape
Power dissipation: 1W
Type of transistor: P-MOSFET
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Drain-source voltage: -20V
On-state resistance: 0.25Ω
Drain current: -2A
Polarisation: unipolar
Gate charge: 4.9nC
кількість в упаковці: 1 шт
товар відсутній
| RTL035N03TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Case: TUMT6
Polarisation: unipolar
Pulsed drain current: 14A
Power dissipation: 1W
Gate charge: 4.6nC
Drain current: 3.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 79mΩ
Gate-source voltage: ±12V
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1W; TUMT6
Case: TUMT6
Polarisation: unipolar
Pulsed drain current: 14A
Power dissipation: 1W
Gate charge: 4.6nC
Drain current: 3.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 79mΩ
Gate-source voltage: ±12V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| RTQ025P02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTQ035P02FHATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTR020N05HZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 2A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 2A
кількість в упаковці: 1 шт
товар відсутній
| RTR020N05TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 2A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 2A
кількість в упаковці: 1 шт
товар відсутній
| RTR020P02FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TSMT3
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: -20V
Drain current: -2A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -8A; 1W; TSMT3
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: -20V
Drain current: -2A
кількість в упаковці: 1 шт
товар відсутній
| RTR025N03HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Power dissipation: 1W
Kind of package: reel; tape
On-state resistance: 0.133Ω
Polarisation: unipolar
Drain current: 2.5A
Gate charge: 3.3nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Power dissipation: 1W
Kind of package: reel; tape
On-state resistance: 0.133Ω
Polarisation: unipolar
Drain current: 2.5A
Gate charge: 3.3nC
Drain-source voltage: 30V
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RTR025P02FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -10A
Drain-source voltage: -20V
Drain current: -2.5A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| RTR030N05FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTR030N05HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTR030N05TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RTR040N03HZGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 66mΩ
Mounting: SMD
Gate charge: 5.9nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RU1C001UNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100mA; Idm: 0.4A; 150mW
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Case: SOT323F
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Polarisation: unipolar
Power dissipation: 0.15W
Type of transistor: N-MOSFET
On-state resistance: 5.6Ω
Drain current: 0.1A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100mA; Idm: 0.4A; 150mW
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Case: SOT323F
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Polarisation: unipolar
Power dissipation: 0.15W
Type of transistor: N-MOSFET
On-state resistance: 5.6Ω
Drain current: 0.1A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
| RU1C001ZPTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -100mA; Idm: -0.4A; 200mW
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 6.8Ω
Type of transistor: P-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -0.4A
Mounting: SMD
Case: SOT323F
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -100mA; Idm: -0.4A; 200mW
Drain-source voltage: -20V
Drain current: -100mA
On-state resistance: 6.8Ω
Type of transistor: P-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -0.4A
Mounting: SMD
Case: SOT323F
кількість в упаковці: 1 шт
на замовлення 1659 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 22.71 грн |
| 19+ | 14.51 грн |
| 100+ | 6.58 грн |
| 391+ | 2.62 грн |
| 1075+ | 2.48 грн |
| RU1C002UNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; Idm: 0.4A; 150mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT323F
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Polarisation: unipolar
Power dissipation: 0.15W
Type of transistor: N-MOSFET
On-state resistance: 4.8Ω
Drain current: 0.2A
Drain-source voltage: 20V
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 200mA; Idm: 0.4A; 150mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT323F
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Polarisation: unipolar
Power dissipation: 0.15W
Type of transistor: N-MOSFET
On-state resistance: 4.8Ω
Drain current: 0.2A
Drain-source voltage: 20V
кількість в упаковці: 20 шт
товар відсутній
| RU1C002ZPTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -200mA
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT323F
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -200mA
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT323F
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
| RU1E002SPTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -0.5A; 200mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.25A
Pulsed drain current: -0.5A
Power dissipation: 0.2W
Case: SOT323F
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -0.5A; 200mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.25A
Pulsed drain current: -0.5A
Power dissipation: 0.2W
Case: SOT323F
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| RU1J002YNTCL |
|
Виробник: ROHM SEMICONDUCTOR
RU1J002YNTCL SMD N channel transistors
RU1J002YNTCL SMD N channel transistors
на замовлення 969 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 7.95 грн |
| 270+ | 3.8 грн |
| 742+ | 3.58 грн |
| RUC002N05HZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Pulsed drain current: 800A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SST3
On-state resistance: 7.2Ω
Gate-source voltage: ±8V
Mounting: SMD
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Pulsed drain current: 800A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SST3
On-state resistance: 7.2Ω
Gate-source voltage: ±8V
Mounting: SMD
кількість в упаковці: 20 шт
товар відсутній
| RUC002N05T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Pulsed drain current: 800A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SST3
On-state resistance: 7.2Ω
Gate-source voltage: ±8V
Mounting: SMD
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3
Pulsed drain current: 800A
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SST3
On-state resistance: 7.2Ω
Gate-source voltage: ±8V
Mounting: SMD
кількість в упаковці: 20 шт
товар відсутній
| RUF015N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Type of transistor: N-MOSFET
Case: TUMT3
Mounting: SMD
Power dissipation: 0.8W
Kind of package: reel; tape
Pulsed drain current: 3A
On-state resistance: 0.31Ω
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain current: 1.5A
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Type of transistor: N-MOSFET
Case: TUMT3
Mounting: SMD
Power dissipation: 0.8W
Kind of package: reel; tape
Pulsed drain current: 3A
On-state resistance: 0.31Ω
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain current: 1.5A
кількість в упаковці: 5 шт
товар відсутній
| RUF020N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 6A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 2nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 6A
кількість в упаковці: 1 шт
товар відсутній
| RUF025N02FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Polarisation: unipolar
Power dissipation: 0.8W
Kind of package: reel; tape
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 5A
Mounting: SMD
Case: TUMT3
Drain-source voltage: 20V
Drain current: 2.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Polarisation: unipolar
Power dissipation: 0.8W
Kind of package: reel; tape
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 5A
Mounting: SMD
Case: TUMT3
Drain-source voltage: 20V
Drain current: 2.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RUF025N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Polarisation: unipolar
Power dissipation: 0.8W
Kind of package: reel; tape
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 5A
Mounting: SMD
Case: TUMT3
Drain-source voltage: 20V
Drain current: 2.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Polarisation: unipolar
Power dissipation: 0.8W
Kind of package: reel; tape
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 5A
Mounting: SMD
Case: TUMT3
Drain-source voltage: 20V
Drain current: 2.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RUM001L02T2CL |
|
Виробник: ROHM SEMICONDUCTOR
RUM001L02T2CL SMD N channel transistors
RUM001L02T2CL SMD N channel transistors
на замовлення 170 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 7.01 грн |
| 445+ | 2.31 грн |
| 1220+ | 2.18 грн |
| RUM002N02T2L |
|
Виробник: ROHM SEMICONDUCTOR
RUM002N02T2L SMD N channel transistors
RUM002N02T2L SMD N channel transistors
на замовлення 740 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 7.86 грн |
| 280+ | 3.67 грн |
| 770+ | 3.47 грн |
| RUM002N05T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 4225 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 19.87 грн |
| 20+ | 13.96 грн |
| 50+ | 8.24 грн |
| 100+ | 6.62 грн |
| 239+ | 4.32 грн |
| 658+ | 4.08 грн |
| 1000+ | 4.04 грн |
| RUQ050N02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RUR040N02FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Mounting: SMD
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 8A
Case: TSMT3
Drain-source voltage: 20V
Drain current: 4A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Mounting: SMD
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 8A
Case: TSMT3
Drain-source voltage: 20V
Drain current: 4A
кількість в упаковці: 1 шт
товар відсутній
| RUR040N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Mounting: SMD
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 8A
Case: TSMT3
Drain-source voltage: 20V
Drain current: 4A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Mounting: SMD
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 8A
Case: TSMT3
Drain-source voltage: 20V
Drain current: 4A
кількість в упаковці: 1 шт
товар відсутній
| RV1C002UNT2CL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: X2-DFN0806-3
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.6A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 11.4Ω
Drain current: 0.15A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 0.6A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: X2-DFN0806-3
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.6A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 11.4Ω
Drain current: 0.15A
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товар відсутній
| RV2C002UNT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: DFN1006-3
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 0.6A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 11.4Ω
Drain current: 0.18A
Drain-source voltage: 20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: DFN1006-3
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 0.6A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 11.4Ω
Drain current: 0.18A
Drain-source voltage: 20V
кількість в упаковці: 5 шт
товар відсутній
| RV2C010UNT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Case: DFN1006-3
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2A
Polarisation: unipolar
Power dissipation: 0.4W
Type of transistor: N-MOSFET
On-state resistance: 1.05Ω
Drain current: 1A
Drain-source voltage: 20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Case: DFN1006-3
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2A
Polarisation: unipolar
Power dissipation: 0.4W
Type of transistor: N-MOSFET
On-state resistance: 1.05Ω
Drain current: 1A
Drain-source voltage: 20V
кількість в упаковці: 5 шт
товар відсутній
| RV3C002UNT2CL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 600A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 600A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 5.4Ω
Drain current: 0.15A
Drain-source voltage: 20V
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 150mA; Idm: 600A; 100mW
Mounting: SMD
Kind of package: reel; tape
Case: X2-DFN0604-3
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 600A
Polarisation: unipolar
Power dissipation: 0.1W
Type of transistor: N-MOSFET
On-state resistance: 5.4Ω
Drain current: 0.15A
Drain-source voltage: 20V
кількість в упаковці: 5 шт
товар відсутній
| RV8L002SNHZGG2CR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 1W; DFN1010-3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 1W
Case: DFN1010-3W
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 1W; DFN1010-3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 1W
Case: DFN1010-3W
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RVQ040N05TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RXH090N03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RXH125N03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RZF030P01TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 800mW; TUMT3
Mounting: SMD
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -12A
Case: TUMT3
Drain-source voltage: -12V
Drain current: -3A
On-state resistance: 144mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 800mW; TUMT3
Mounting: SMD
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -12A
Case: TUMT3
Drain-source voltage: -12V
Drain current: -3A
On-state resistance: 144mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RZM001P02T2L |
|
Виробник: ROHM SEMICONDUCTOR
RZM001P02T2L SMD P channel transistors
RZM001P02T2L SMD P channel transistors
на замовлення 492 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 7.02 грн |
| 380+ | 2.71 грн |
| 1040+ | 2.57 грн |
| RZM002P02T2L |
|
Виробник: ROHM SEMICONDUCTOR
RZM002P02T2L SMD P channel transistors
RZM002P02T2L SMD P channel transistors
на замовлення 6435 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 6.95 грн |
| 220+ | 4.73 грн |
| 595+ | 4.47 грн |
| SCS106AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; 65W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Max. load current: 29A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 86A
Power dissipation: 65W
Heatsink thickness: max. 1.27mm
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; 65W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Max. load current: 29A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 86A
Power dissipation: 65W
Heatsink thickness: max. 1.27mm
кількість в упаковці: 1 шт
товар відсутній
| SCS108AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; 75W; TO220AC; tube
Kind of package: tube
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 35A
Max. forward voltage: 1.7V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; 75W; TO220AC; tube
Kind of package: tube
Power dissipation: 75W
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 35A
Max. forward voltage: 1.7V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 110A
кількість в упаковці: 1 шт
товар відсутній