Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99813) > Сторінка 1469 з 1664
| Фото | Назва | Виробник | Інформація |
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| RCJ510N25TL | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Pulsed drain current: 160A Drain-source voltage: 250V Drain current: 51A On-state resistance: 155mΩ Type of transistor: N-MOSFET Power dissipation: 304W Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1000 шт |
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| RCJ700N20TL | ROHM SEMICONDUCTOR |
RCJ700N20TL SMD N channel transistors |
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| RCX081N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 8A; Idm: 32A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 8A Pulsed drain current: 32A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 8.5nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX160N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX200N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Pulsed drain current: 80A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX220N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 22A Pulsed drain current: 88A Power dissipation: 61W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX300N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 30A; Idm: 120A; 61W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Drain-source voltage: 200V Drain current: 30A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 61W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A кількість в упаковці: 1 шт |
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| RCX330N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 250V Drain current: 33A On-state resistance: 0.23Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A кількість в упаковці: 1 шт |
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| RCX450N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 180A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX511N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 51A Pulsed drain current: 204A Power dissipation: 84W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RD3G01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -15A On-state resistance: 49mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| RD3G03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -70A On-state resistance: 8.7mΩ Type of transistor: P-MOSFET кількість в упаковці: 2500 шт |
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| RD3G400GNTL | ROHM SEMICONDUCTOR |
RD3G400GNTL SMD N channel transistors |
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| RD3G500GNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 50A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: DPAK; TO252 кількість в упаковці: 2500 шт |
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| RD3H045SPTL1 | ROHM SEMICONDUCTOR |
RD3H045SPTL1 SMD P channel transistors |
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| RD3H080SPFRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -8A; Idm: -16A; 15W Mounting: SMD Case: DPAK; TO252 Power dissipation: 15W Kind of package: reel; tape Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16A Drain-source voltage: -45V Drain current: -8A On-state resistance: 147mΩ Type of transistor: P-MOSFET Polarisation: unipolar кількість в упаковці: 2500 шт |
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| RD3H160SPFRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -16A; Idm: -32A; 20W Mounting: SMD Kind of package: reel; tape Power dissipation: 20W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -32A Case: DPAK; TO252 Drain-source voltage: -45V Drain current: -16A On-state resistance: 70mΩ Type of transistor: P-MOSFET кількість в упаковці: 2500 шт |
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| RD3H160SPTL1 | ROHM SEMICONDUCTOR |
RD3H160SPTL1 SMD P channel transistors |
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| RD3L01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Power dissipation: 26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -10A On-state resistance: 93mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| RD3L03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -35A On-state resistance: 46mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| RD3L050SNFRATL | ROHM SEMICONDUCTOR |
RD3L050SNFRATL SMD N channel transistors |
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| RD3L050SNTL1 | ROHM SEMICONDUCTOR |
RD3L050SNTL1 SMD N channel transistors |
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| RD3L07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -70A On-state resistance: 14.1mΩ Type of transistor: P-MOSFET кількість в упаковці: 2500 шт |
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| RD3L080SNFRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252 Mounting: SMD Case: DPAK; TO252 Power dissipation: 15W Kind of package: reel; tape Gate charge: 9.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 16A Drain-source voltage: 60V Drain current: 8A On-state resistance: 109mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 2500 шт |
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| RD3L080SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252 Mounting: SMD Case: DPAK; TO252 Power dissipation: 15W Kind of package: reel; tape Gate charge: 9.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 16A Drain-source voltage: 60V Drain current: 8A On-state resistance: 109mΩ Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
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| RD3L08BGNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W Mounting: SMD Polarisation: unipolar Drain current: 80A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 8.1mΩ Gate-source voltage: ±20V Pulsed drain current: 160A Power dissipation: 119W Gate charge: 71nC кількість в упаковці: 2500 шт |
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| RD3L140SPFRATL | ROHM SEMICONDUCTOR |
RD3L140SPFRATL SMD P channel transistors |
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| RD3L140SPTL1 | ROHM SEMICONDUCTOR |
RD3L140SPTL1 SMD P channel transistors |
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| RD3L150SNFRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 30A Power dissipation: 20W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| RD3L150SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 30A Power dissipation: 20W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RD3L220SNFRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 44A; 20W; DPAK,TO252 Drain-source voltage: 60V Drain current: 22A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Case: DPAK; TO252 Mounting: SMD кількість в упаковці: 2500 шт |
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| RD3P050SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 15W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Pulsed drain current: 20A Power dissipation: 15W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RD3P08BBDTL | ROHM SEMICONDUCTOR |
RD3P08BBDTL SMD N channel transistors |
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| RD3P100SNFRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 20W Polarisation: unipolar On-state resistance: 147mΩ Drain current: 10A Drain-source voltage: 100V Case: DPAK; TO252 Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A кількість в упаковці: 1 шт |
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| RD3P100SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 20A Power dissipation: 20W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 147mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RD3P130SPFRATL | ROHM SEMICONDUCTOR |
RD3P130SPFRATL SMD P channel transistors |
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| RD3P175SNTL1 | ROHM SEMICONDUCTOR |
RD3P175SNTL1 SMD N channel transistors |
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| RD3P200SNTL1 | ROHM SEMICONDUCTOR |
RD3P200SNTL1 SMD N channel transistors |
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| RD3S075CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 52W Case: TO252 Gate-source voltage: ±20V On-state resistance: 347mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| RD3S100CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 10A Pulsed drain current: 40A Power dissipation: 85W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| RD3T075CNTL1 | ROHM SEMICONDUCTOR |
RD3T075CNTL1 SMD N channel transistors |
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| RE1C001UNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100mA; Idm: 0.4A; 150mW Mounting: SMD Kind of package: reel; tape Case: SOT416F Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.4A Polarisation: unipolar Power dissipation: 0.15W Type of transistor: N-MOSFET On-state resistance: 18Ω Drain current: 0.1A Drain-source voltage: 20V кількість в упаковці: 20 шт |
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RE1C001ZPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; Idm: -400mA; 0.15W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -100mA Pulsed drain current: -400mA Power dissipation: 0.15W Case: SC89 Gate-source voltage: ±10V On-state resistance: 3.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 3060 шт: термін постачання 14-21 дні (днів) |
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RE1C002UNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.2A Pulsed drain current: 0.4A Power dissipation: 0.15W Case: SC89 Gate-source voltage: ±8V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 3155 шт: термін постачання 14-21 дні (днів) |
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| RE1C002ZPTL | ROHM SEMICONDUCTOR |
RE1C002ZPTL SMD P channel transistors |
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| RE1E002SPTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -0.5A; 150mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.25A Pulsed drain current: -0.5A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
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| RE1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 20 шт |
на замовлення 2240 шт: термін постачання 14-21 дні (днів) |
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| RE1L002SNTL | ROHM SEMICONDUCTOR |
RE1L002SNTL SMD N channel transistors |
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RF01VM2SFHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V Case: SC90A; SOD323F Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 250V Reverse recovery time: 50ns Type of diode: rectifying Max. forward impulse current: 1A Load current: 0.1A Max. forward voltage: 1.2V Max. load current: 0.3A кількість в упаковці: 10 шт |
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RF01VM2STE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V Case: SC90A; SOD323F Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 250V Reverse recovery time: 50ns Type of diode: rectifying Max. forward impulse current: 1A Load current: 0.1A Max. forward voltage: 1.2V Max. load current: 0.3A кількість в упаковці: 20 шт |
на замовлення 2280 шт: термін постачання 14-21 дні (днів) |
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| RF04UA2DTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.4A; 25ns; TSMD6; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.4A Reverse recovery time: 25ns Semiconductor structure: double independent Case: TSMD6 Max. forward voltage: 0.98V Max. forward impulse current: 1A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| RF05VAM1STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Mounting: SMD Max. forward impulse current: 6A Case: SOD323HE Kind of package: reel; tape Load current: 0.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 25ns Max. forward voltage: 0.98V Max. off-state voltage: 100V кількість в упаковці: 10 шт |
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| RF05VAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape кількість в упаковці: 10 шт |
на замовлення 2860 шт: термін постачання 14-21 дні (днів) |
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| RF05VYM1SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape кількість в упаковці: 10 шт |
на замовлення 4340 шт: термін постачання 14-21 дні (днів) |
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| RF05VYM2SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape кількість в упаковці: 10 шт |
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| RF071MM2STFTR | ROHM SEMICONDUCTOR |
RF071MM2STFTR SMD universal diodes |
товар відсутній |
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| RF071MM2STR | ROHM SEMICONDUCTOR |
RF071MM2STR SMD universal diodes |
на замовлення 2320 шт: термін постачання 14-21 дні (днів) |
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RF081L2STFTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SMA; Ufmax: 0.98V; Ifsm: 25A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.98V Max. forward impulse current: 25A Kind of package: reel; tape кількість в упаковці: 5 шт |
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| RF081LAM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1.1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.98V Max. forward impulse current: 25A Kind of package: reel; tape кількість в упаковці: 5 шт |
товар відсутній |
| RCJ510N25TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1000 шт
товар відсутній
| RCX081N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX160N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX200N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX220N25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 61W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 61W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX300N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; Idm: 120A; 61W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 200V
Drain current: 30A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 61W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; Idm: 120A; 61W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 200V
Drain current: 30A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 61W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
кількість в упаковці: 1 шт
товар відсутній
| RCX330N25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
кількість в упаковці: 1 шт
товар відсутній
| RCX450N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX511N25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 84W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 84W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RD3G01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RD3G03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RD3G07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
| RD3G500GNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: DPAK; TO252
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: DPAK; TO252
кількість в упаковці: 2500 шт
товар відсутній
| RD3H080SPFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -8A; Idm: -16A; 15W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 15W
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -16A
Drain-source voltage: -45V
Drain current: -8A
On-state resistance: 147mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -8A; Idm: -16A; 15W
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 15W
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -16A
Drain-source voltage: -45V
Drain current: -8A
On-state resistance: 147mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
кількість в упаковці: 2500 шт
товар відсутній
| RD3H160SPFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -16A; Idm: -32A; 20W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 20W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A
Case: DPAK; TO252
Drain-source voltage: -45V
Drain current: -16A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -16A; Idm: -32A; 20W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 20W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A
Case: DPAK; TO252
Drain-source voltage: -45V
Drain current: -16A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
| RD3L01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RD3L03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RD3L07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
| RD3L080SNFRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 15W
Kind of package: reel; tape
Gate charge: 9.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 15W
Kind of package: reel; tape
Gate charge: 9.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 2500 шт
товар відсутній
| RD3L080SNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 15W
Kind of package: reel; tape
Gate charge: 9.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Power dissipation: 15W
Kind of package: reel; tape
Gate charge: 9.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| RD3L08BGNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W
Mounting: SMD
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 8.1mΩ
Gate-source voltage: ±20V
Pulsed drain current: 160A
Power dissipation: 119W
Gate charge: 71nC
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 160A; 119W
Mounting: SMD
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 8.1mΩ
Gate-source voltage: ±20V
Pulsed drain current: 160A
Power dissipation: 119W
Gate charge: 71nC
кількість в упаковці: 2500 шт
товар відсутній
| RD3L150SNFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RD3L150SNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RD3L220SNFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 44A; 20W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 22A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Case: DPAK; TO252
Mounting: SMD
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 44A; 20W; DPAK,TO252
Drain-source voltage: 60V
Drain current: 22A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Case: DPAK; TO252
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
| RD3P050SNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 15W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 15W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 15W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RD3P100SNFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
On-state resistance: 147mΩ
Drain current: 10A
Drain-source voltage: 100V
Case: DPAK; TO252
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 20W
Polarisation: unipolar
On-state resistance: 147mΩ
Drain current: 10A
Drain-source voltage: 100V
Case: DPAK; TO252
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 1 шт
товар відсутній
| RD3P100SNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RD3S075CNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 347mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 347mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RD3S100CNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| RE1C001UNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100mA; Idm: 0.4A; 150mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT416F
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Polarisation: unipolar
Power dissipation: 0.15W
Type of transistor: N-MOSFET
On-state resistance: 18Ω
Drain current: 0.1A
Drain-source voltage: 20V
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100mA; Idm: 0.4A; 150mW
Mounting: SMD
Kind of package: reel; tape
Case: SOT416F
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Polarisation: unipolar
Power dissipation: 0.15W
Type of transistor: N-MOSFET
On-state resistance: 18Ω
Drain current: 0.1A
Drain-source voltage: 20V
кількість в упаковці: 20 шт
товар відсутній
| RE1C001ZPTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; Idm: -400mA; 0.15W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -100mA
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: SC89
Gate-source voltage: ±10V
On-state resistance: 3.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.1A; Idm: -400mA; 0.15W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -100mA
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: SC89
Gate-source voltage: ±10V
On-state resistance: 3.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 3060 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 15.14 грн |
| 26+ | 10.86 грн |
| 31+ | 8.52 грн |
| 100+ | 4.8 грн |
| 401+ | 2.56 грн |
| 1102+ | 2.42 грн |
| 75000+ | 2.31 грн |
| RE1C002UNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Pulsed drain current: 0.4A
Power dissipation: 0.15W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 0.15W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Pulsed drain current: 0.4A
Power dissipation: 0.15W
Case: SC89
Gate-source voltage: ±8V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 3155 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 17.03 грн |
| 20+ | 13.87 грн |
| 23+ | 11.51 грн |
| 50+ | 7.19 грн |
| 100+ | 5.76 грн |
| 351+ | 2.92 грн |
| 964+ | 2.76 грн |
| RE1E002SPTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -0.5A; 150mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.25A
Pulsed drain current: -0.5A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -250mA; Idm: -0.5A; 150mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.25A
Pulsed drain current: -0.5A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
| RE1J002YNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 20 шт
на замовлення 2240 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 4.92 грн |
| 100+ | 4.25 грн |
| 320+ | 3.43 грн |
| 840+ | 3.25 грн |
| 12000+ | 3.08 грн |
| RF01VM2SFHTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Type of diode: rectifying
Max. forward impulse current: 1A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 0.3A
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Type of diode: rectifying
Max. forward impulse current: 1A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 0.3A
кількість в упаковці: 10 шт
товар відсутній
| RF01VM2STE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Type of diode: rectifying
Max. forward impulse current: 1A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 0.3A
кількість в упаковці: 20 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Case: SC90A; SOD323F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Reverse recovery time: 50ns
Type of diode: rectifying
Max. forward impulse current: 1A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 0.3A
кількість в упаковці: 20 шт
на замовлення 2280 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 5.2 грн |
| 100+ | 4.36 грн |
| 320+ | 3.32 грн |
| 860+ | 3.15 грн |
| 12000+ | 3.12 грн |
| RF04UA2DTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.4A; 25ns; TSMD6; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 25ns
Semiconductor structure: double independent
Case: TSMD6
Max. forward voltage: 0.98V
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.4A; 25ns; TSMD6; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 25ns
Semiconductor structure: double independent
Case: TSMD6
Max. forward voltage: 0.98V
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| RF05VAM1STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Mounting: SMD
Max. forward impulse current: 6A
Case: SOD323HE
Kind of package: reel; tape
Load current: 0.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Max. off-state voltage: 100V
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Mounting: SMD
Max. forward impulse current: 6A
Case: SOD323HE
Kind of package: reel; tape
Load current: 0.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Max. off-state voltage: 100V
кількість в упаковці: 10 шт
товар відсутній
| RF05VAM2STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
кількість в упаковці: 10 шт
на замовлення 2860 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 8.39 грн |
| 50+ | 7.63 грн |
| 190+ | 5.52 грн |
| 500+ | 5.22 грн |
| RF05VYM1SFHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
кількість в упаковці: 10 шт
на замовлення 4340 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 7.61 грн |
| 50+ | 6.61 грн |
| 200+ | 4.88 грн |
| 550+ | 4.6 грн |
| RF05VYM2SFHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
кількість в упаковці: 10 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
кількість в упаковці: 10 шт
товар відсутній
| RF071MM2STR |
|
Виробник: ROHM SEMICONDUCTOR
RF071MM2STR SMD universal diodes
RF071MM2STR SMD universal diodes
на замовлення 2320 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 15.33 грн |
| 120+ | 8.83 грн |
| 320+ | 8.35 грн |
| RF081L2STFTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SMA; Ufmax: 0.98V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SMA; Ufmax: 0.98V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| RF081LAM2STFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.1A; 25ns; SOD128; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.98V
Max. forward impulse current: 25A
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній