Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100320) > Сторінка 1471 з 1672
| Фото | Назва | Виробник | Інформація |
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RFU02VSM6STR | ROHM SEMICONDUCTOR |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.2A; 35ns; SOD323HE; Ufmax: 2.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 2.2V Max. forward impulse current: 1A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2790 шт: термін постачання 14-21 дні (днів) |
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| RFU02VSM8STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 1A Semiconductor structure: single diode Case: SOD323HE Mounting: SMD Kind of package: reel; tape Reverse recovery time: 35ns Max. forward voltage: 3V Load current: 0.2A кількість в упаковці: 1 шт |
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| RFUH10NS4SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 430V Load current: 10A Reverse recovery time: 25ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 80A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| RFUH10NS4STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 430V Load current: 10A Reverse recovery time: 25ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 80A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| RFUH20NS6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 20A; 35ns; D2PAK; Ufmax: 2.8V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 20A Reverse recovery time: 35ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 2.8V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| RFUH20NS6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 20A; 35ns; D2PAK; Ufmax: 2.8V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 20A Reverse recovery time: 35ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 2.8V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 1 шт |
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| RFUH20TF6SFHC9 | ROHM SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 100A; TO220FP-2; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220FP-2 Max. forward voltage: 2.8V Reverse recovery time: 35ns кількість в упаковці: 1 шт |
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| RFUH20TJ6SGC9 | ROHM SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 120A; TO220FP-2; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 20A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 120A Case: TO220FP-2 Max. forward voltage: 2.8V Reverse recovery time: 80ns кількість в упаковці: 1 шт |
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| RFV30TG6SGC9 | ROHM SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 60ns Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 2.8V кількість в упаковці: 1 шт |
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| RFV8BM6STL | ROHM SEMICONDUCTOR |
RFV8BM6STL SMD universal diodes |
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| RFVS8TG6SGC9 | ROHM SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ufmax: 3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 40ns Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 60A Max. forward voltage: 3V кількість в упаковці: 1 шт |
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| RGC80TSX8RGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.8kV; 40A; 267W; TO247-3 Collector-emitter voltage: 1.8kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 0.12µs Turn-off time: 725ns Type of transistor: IGBT Power dissipation: 267W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 468nC Mounting: THT Case: TO247-3 кількість в упаковці: 1 шт |
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| RGCL60TS60DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3 Mounting: THT Collector-emitter voltage: 600V Turn-off time: 479ns Kind of package: tube Case: TO247-3 Features of semiconductor devices: integrated anti-parallel diode Gate charge: 68nC Type of transistor: IGBT Turn-on time: 95ns Pulsed collector current: 120A Collector current: 30A Gate-emitter voltage: ±30V Power dissipation: 55W кількість в упаковці: 1 шт |
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| RGCL80TS60DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3 Mounting: THT Collector current: 40A Gate-emitter voltage: ±30V Type of transistor: IGBT Case: TO247-3 Power dissipation: 74W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 98nC Collector-emitter voltage: 600V Turn-off time: 565ns Turn-on time: 114ns Pulsed collector current: 160A кількість в упаковці: 1 шт |
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| RGPR30BM40HRTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 430V; 30A; 125W; TO252 Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 30A Power dissipation: 125W Case: TO252 Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 1µs Turn-off time: 9.5µs Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems кількість в упаковці: 1 шт |
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| RGS00TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 150A Turn-on time: 70ns Turn-off time: 292ns Type of transistor: IGBT Power dissipation: 163W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 58nC кількість в упаковці: 1 шт |
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| RGS00TS65EHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 150A Turn-on time: 70ns Turn-off time: 299ns Type of transistor: IGBT Power dissipation: 163W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 58nC кількість в упаковці: 1 шт |
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| RGS50TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 53ns Turn-off time: 345ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGS50TSX2HRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 53ns Turn-off time: 345ns кількість в упаковці: 1 шт |
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 90A Turn-on time: 46ns Turn-off time: 290ns Type of transistor: IGBT Power dissipation: 111W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 30A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 36nC кількість в упаковці: 1 шт |
на замовлення 428 шт: термін постачання 14-21 дні (днів) |
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| RGS80TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 120A Turn-on time: 62ns Turn-off time: 291ns Type of transistor: IGBT Power dissipation: 136W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 48nC кількість в упаковці: 1 шт |
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| RGS80TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 104nC Mounting: THT кількість в упаковці: 1 шт |
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| RGS80TSX2HRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Gate charge: 104nC Mounting: THT кількість в упаковці: 1 шт |
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| RGT16BM65DTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: TO252 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGT16NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 47W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 24A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 170ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGT16NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 47W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 24A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 170ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1000 шт |
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| RGT30NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 66W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 66W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Turn-on time: 40ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGT30TM65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 8A; 16W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 16W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 40ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGT40NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 70W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 70W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Turn-on time: 51ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGT50NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGT50NS65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGT50NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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| RGT50TM65DGC9 | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Mounting: SMD Type of transistor: IGBT Power dissipation: 23W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Case: TO220NFM Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 13A Pulsed collector current: 75A Turn-on time: 65ns Turn-off time: 210ns кількість в упаковці: 1 шт |
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| RGT8BM65DTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 31W; TO252 Case: TO252 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 12A Turn-on time: 54ns Turn-off time: 158ns Type of transistor: IGBT Power dissipation: 31W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 13.5nC Mounting: SMD кількість в упаковці: 1 шт |
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| RGTH00TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 200A Turn-on time: 102ns Turn-off time: 221ns Type of transistor: IGBT Power dissipation: 138W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 94nC кількість в упаковці: 1 шт |
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| RGTH40TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 80A Turn-on time: 47ns Turn-off time: 141ns Type of transistor: IGBT Power dissipation: 72W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 20A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 40nC кількість в упаковці: 1 шт |
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| RGTH40TS65GC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 80A Turn-on time: 47ns Turn-off time: 141ns Type of transistor: IGBT Power dissipation: 72W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 20A Gate charge: 40nC кількість в упаковці: 1 шт |
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| RGTH50TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 100A Turn-on time: 65ns Turn-off time: 172ns Type of transistor: IGBT Power dissipation: 87W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 25A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC кількість в упаковці: 1 шт |
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| RGTH80TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 160A Turn-on time: 84ns Turn-off time: 194ns Type of transistor: IGBT Power dissipation: 117W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 79nC кількість в упаковці: 1 шт |
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| RGTV00TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 200A Turn-on time: 62ns Turn-off time: 247ns Type of transistor: IGBT Power dissipation: 138W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 104nC кількість в упаковці: 1 шт |
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| RGTV60TK65DGVC11 | ROHM SEMICONDUCTOR |
RGTV60TK65DGVC11 THT IGBT transistors |
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| RGTVX6TS65GC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 320A Turn-on time: 83ns Turn-off time: 298ns Type of transistor: IGBT Power dissipation: 202W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 80A Gate charge: 171nC кількість в упаковці: 1 шт |
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| RGW80TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 160A Turn-on time: 59ns Turn-off time: 228ns Type of transistor: IGBT Power dissipation: 107W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 110nC кількість в упаковці: 1 шт |
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| RGWX5TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 174W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 300A Turn-on time: 93ns Turn-off time: 305ns Type of transistor: IGBT Power dissipation: 174W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 75A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 213nC кількість в упаковці: 1 шт |
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| RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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RHP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 771 шт: термін постачання 14-21 дні (днів) |
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| RHP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RHP030N03T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 10A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
товар відсутній |
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| RHU003N03FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 2.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
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| RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.08mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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| RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 192W Polarisation: unipolar Gate charge: 175nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 60V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET кількість в упаковці: 1000 шт |
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| RJ1P12BBDTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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| RJK005N03FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±12V On-state resistance: 940mΩ Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
товар відсутній |
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| RJP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RJP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD On-state resistance: 3.1Ω Type of transistor: N-MOSFET Case: UMT3 Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.8A Drain-source voltage: 60V Drain current: 0.2A кількість в упаковці: 5 шт |
товар відсутній |
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RJU003N03FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W Mounting: SMD Drain-source voltage: 30V Drain current: 0.3A On-state resistance: 1.1Ω Type of transistor: N-MOSFET Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 1.2A Case: SC70; SOT323 кількість в упаковці: 1 шт |
товар відсутній |
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| RK7002AT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SST3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
товар відсутній |
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| RK7002BMHZGT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.35W Case: SST3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| RFU02VSM6STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.2A; 35ns; SOD323HE; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 2.2V
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.2A; 35ns; SOD323HE; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 2.2V
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2790 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 16.46 грн |
| 26+ | 10.92 грн |
| 50+ | 7.91 грн |
| 100+ | 7.09 грн |
| 235+ | 4.49 грн |
| 645+ | 4.24 грн |
| 150000+ | 4.17 грн |
| RFU02VSM8STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward voltage: 3V
Load current: 0.2A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward voltage: 3V
Load current: 0.2A
кількість в упаковці: 1 шт
товар відсутній
| RFUH10NS4SFHTL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 430V
Load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 430V
Load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| RFUH10NS4STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 430V
Load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 430V
Load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| RFUH20NS6SFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 35ns; D2PAK; Ufmax: 2.8V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 2.8V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 35ns; D2PAK; Ufmax: 2.8V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 2.8V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| RFUH20NS6STL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 35ns; D2PAK; Ufmax: 2.8V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 2.8V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 20A; 35ns; D2PAK; Ufmax: 2.8V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 20A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 2.8V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| RFUH20TF6SFHC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 100A; TO220FP-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP-2
Max. forward voltage: 2.8V
Reverse recovery time: 35ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 100A; TO220FP-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP-2
Max. forward voltage: 2.8V
Reverse recovery time: 35ns
кількість в упаковці: 1 шт
товар відсутній
| RFUH20TJ6SGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 120A; TO220FP-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220FP-2
Max. forward voltage: 2.8V
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 120A; TO220FP-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 20A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220FP-2
Max. forward voltage: 2.8V
Reverse recovery time: 80ns
кількість в упаковці: 1 шт
товар відсутній
| RFV30TG6SGC9 |
Виробник: ROHM SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 2.8V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 60ns
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 2.8V
кількість в упаковці: 1 шт
товар відсутній
| RFVS8TG6SGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ufmax: 3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 60A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ufmax: 3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 40ns
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 60A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
| RGC80TSX8RGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 267W; TO247-3
Collector-emitter voltage: 1.8kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 0.12µs
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 267W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 468nC
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 267W; TO247-3
Collector-emitter voltage: 1.8kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 0.12µs
Turn-off time: 725ns
Type of transistor: IGBT
Power dissipation: 267W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 468nC
Mounting: THT
Case: TO247-3
кількість в упаковці: 1 шт
товар відсутній
| RGCL60TS60DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3
Mounting: THT
Collector-emitter voltage: 600V
Turn-off time: 479ns
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 68nC
Type of transistor: IGBT
Turn-on time: 95ns
Pulsed collector current: 120A
Collector current: 30A
Gate-emitter voltage: ±30V
Power dissipation: 55W
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3
Mounting: THT
Collector-emitter voltage: 600V
Turn-off time: 479ns
Kind of package: tube
Case: TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 68nC
Type of transistor: IGBT
Turn-on time: 95ns
Pulsed collector current: 120A
Collector current: 30A
Gate-emitter voltage: ±30V
Power dissipation: 55W
кількість в упаковці: 1 шт
товар відсутній
| RGCL80TS60DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3
Mounting: THT
Collector current: 40A
Gate-emitter voltage: ±30V
Type of transistor: IGBT
Case: TO247-3
Power dissipation: 74W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 98nC
Collector-emitter voltage: 600V
Turn-off time: 565ns
Turn-on time: 114ns
Pulsed collector current: 160A
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 74W; TO247-3
Mounting: THT
Collector current: 40A
Gate-emitter voltage: ±30V
Type of transistor: IGBT
Case: TO247-3
Power dissipation: 74W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 98nC
Collector-emitter voltage: 600V
Turn-off time: 565ns
Turn-on time: 114ns
Pulsed collector current: 160A
кількість в упаковці: 1 шт
товар відсутній
| RGPR30BM40HRTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 30A; 125W; TO252
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 30A
Power dissipation: 125W
Case: TO252
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Turn-on time: 1µs
Turn-off time: 9.5µs
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 430V; 30A; 125W; TO252
Type of transistor: IGBT
Collector-emitter voltage: 430V
Collector current: 30A
Power dissipation: 125W
Case: TO252
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Turn-on time: 1µs
Turn-off time: 9.5µs
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: automotive industry; ignition systems
кількість в упаковці: 1 шт
товар відсутній
| RGS00TS65DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 150A
Turn-on time: 70ns
Turn-off time: 292ns
Type of transistor: IGBT
Power dissipation: 163W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 150A
Turn-on time: 70ns
Turn-off time: 292ns
Type of transistor: IGBT
Power dissipation: 163W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
кількість в упаковці: 1 шт
товар відсутній
| RGS00TS65EHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 150A
Turn-on time: 70ns
Turn-off time: 299ns
Type of transistor: IGBT
Power dissipation: 163W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 150A
Turn-on time: 70ns
Turn-off time: 299ns
Type of transistor: IGBT
Power dissipation: 163W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
кількість в упаковці: 1 шт
товар відсутній
| RGS50TSX2DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGS50TSX2HRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 345ns
кількість в упаковці: 1 шт
товар відсутній
| RGS60TS65DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 90A
Turn-on time: 46ns
Turn-off time: 290ns
Type of transistor: IGBT
Power dissipation: 111W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 30A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 36nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 90A
Turn-on time: 46ns
Turn-off time: 290ns
Type of transistor: IGBT
Power dissipation: 111W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 30A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 36nC
кількість в упаковці: 1 шт
на замовлення 428 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.28 грн |
| 4+ | 353.89 грн |
| 9+ | 321.9 грн |
| 450+ | 310.21 грн |
| RGS80TS65DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
кількість в упаковці: 1 шт
товар відсутній
| RGS80TSX2DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Mounting: THT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| RGS80TSX2HRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Gate charge: 104nC
Mounting: THT
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Gate charge: 104nC
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| RGT16BM65DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO252
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO252
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGT16NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 47W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 170ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 47W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 170ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGT16NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 47W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 170ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1000 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 47W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 170ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1000 шт
товар відсутній
| RGT30NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 66W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 66W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 66W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 66W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGT30TM65DGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 16W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 16W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 16W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 16W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGT40NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 70W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 70W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Turn-on time: 51ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 70W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 70W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Turn-on time: 51ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGT50NL65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGT50NS65DGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGT50NS65DGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| RGT50TM65DGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Mounting: SMD
Type of transistor: IGBT
Power dissipation: 23W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Case: TO220NFM
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 13A
Pulsed collector current: 75A
Turn-on time: 65ns
Turn-off time: 210ns
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Mounting: SMD
Type of transistor: IGBT
Power dissipation: 23W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Case: TO220NFM
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 13A
Pulsed collector current: 75A
Turn-on time: 65ns
Turn-off time: 210ns
кількість в упаковці: 1 шт
товар відсутній
| RGT8BM65DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 31W; TO252
Case: TO252
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 8A
Pulsed collector current: 12A
Turn-on time: 54ns
Turn-off time: 158ns
Type of transistor: IGBT
Power dissipation: 31W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 13.5nC
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 31W; TO252
Case: TO252
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 8A
Pulsed collector current: 12A
Turn-on time: 54ns
Turn-off time: 158ns
Type of transistor: IGBT
Power dissipation: 31W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 13.5nC
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| RGTH00TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 200A
Turn-on time: 102ns
Turn-off time: 221ns
Type of transistor: IGBT
Power dissipation: 138W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 94nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 200A
Turn-on time: 102ns
Turn-off time: 221ns
Type of transistor: IGBT
Power dissipation: 138W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 94nC
кількість в упаковці: 1 шт
товар відсутній
| RGTH40TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 40nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 40nC
кількість в упаковці: 1 шт
товар відсутній
| RGTH40TS65GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Gate charge: 40nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Gate charge: 40nC
кількість в упаковці: 1 шт
товар відсутній
| RGTH50TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
кількість в упаковці: 1 шт
товар відсутній
| RGTH80TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 84ns
Turn-off time: 194ns
Type of transistor: IGBT
Power dissipation: 117W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 79nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 84ns
Turn-off time: 194ns
Type of transistor: IGBT
Power dissipation: 117W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 79nC
кількість в упаковці: 1 шт
товар відсутній
| RGTV00TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 200A
Turn-on time: 62ns
Turn-off time: 247ns
Type of transistor: IGBT
Power dissipation: 138W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 200A
Turn-on time: 62ns
Turn-off time: 247ns
Type of transistor: IGBT
Power dissipation: 138W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
кількість в упаковці: 1 шт
товар відсутній
| RGTVX6TS65GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 320A
Turn-on time: 83ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 202W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 80A
Gate charge: 171nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 320A
Turn-on time: 83ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 202W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 80A
Gate charge: 171nC
кількість в упаковці: 1 шт
товар відсутній
| RGW80TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 59ns
Turn-off time: 228ns
Type of transistor: IGBT
Power dissipation: 107W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 110nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 59ns
Turn-off time: 228ns
Type of transistor: IGBT
Power dissipation: 107W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 110nC
кількість в упаковці: 1 шт
товар відсутній
| RGWX5TS65DGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 174W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 300A
Turn-on time: 93ns
Turn-off time: 305ns
Type of transistor: IGBT
Power dissipation: 174W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 213nC
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 174W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 300A
Turn-on time: 93ns
Turn-off time: 305ns
Type of transistor: IGBT
Power dissipation: 174W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 213nC
кількість в упаковці: 1 шт
товар відсутній
| RHK003N06FRAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RHP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 771 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 29.05 грн |
| 11+ | 26.61 грн |
| 50+ | 22.75 грн |
| 51+ | 20.86 грн |
| 139+ | 19.78 грн |
| 1000+ | 19.15 грн |
| RHP020N06T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RHP030N03T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RHU002N06FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
| RHU003N03FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
| RJ1G12BGNTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.08mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.08mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| RJ1L12BGNTLL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1000 шт
товар відсутній
| RJ1P12BBDTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
| RJK005N03FRAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±12V
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±12V
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
| RJP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RJP020N06T100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RJU002N06FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
On-state resistance: 3.1Ω
Type of transistor: N-MOSFET
Case: UMT3
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 60V
Drain current: 0.2A
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
On-state resistance: 3.1Ω
Type of transistor: N-MOSFET
Case: UMT3
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 60V
Drain current: 0.2A
кількість в упаковці: 5 шт
товар відсутній
| RJU003N03FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 0.3A
On-state resistance: 1.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1.2A
Case: SC70; SOT323
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W
Mounting: SMD
Drain-source voltage: 30V
Drain current: 0.3A
On-state resistance: 1.1Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1.2A
Case: SC70; SOT323
кількість в упаковці: 1 шт
товар відсутній
| RK7002AT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
товар відсутній
| RK7002BMHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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