IXFN140N25T IXYS

Category: Transistor modules MOSFET, Description: Module; single transistor; 250V; 120A; SOT227B; screw; Idm: 400A, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 250V, Drain current: 120A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 17mΩ, Pulsed drain current: 400A, Power dissipation: 690W, Technology: GigaMOS™; HiPerFET™, Kind of channel: enhanced, Gate charge: 255nC, Reverse recovery time: 200ns, Gate-source voltage: ±30V, Mechanical mounting: screw, кількість в упаковці: 300 шт.