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IXFN150N65X2 Littelfuse Inc.
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Description: MOSFET N-CH 650V 145A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3595.97 грн |
10+ | 3148.01 грн |
100+ | 2833.23 грн |
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Технічний опис IXFN150N65X2 Littelfuse Inc.
Description: MOSFET N-CH 650V 145A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 25 V.
Інші пропозиції IXFN150N65X2 за ціною від 2777.9 грн до 3841.73 грн
Фото | Назва | Виробник | Інформація |
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IXFN150N65X2 | Виробник : IXYS |
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на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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IXFN150N65X2 | Виробник : Littelfuse |
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товар відсутній |
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IXFN150N65X2 | Виробник : IXYS |
![]() Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 145A Pulsed drain current: 300A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 17mΩ Gate charge: 355nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 190ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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IXFN150N65X2 | Виробник : IXYS |
![]() Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 145A Pulsed drain current: 300A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±30V On-state resistance: 17mΩ Gate charge: 355nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 190ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |