IXFN130N90SK IXYS
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 900V
Drain current: 109A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10mΩ
Technology: SiC
Kind of channel: enhanced
Gate charge: 68nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис IXFN130N90SK IXYS
Category: Transistor modules MOSFET, Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 900V, Drain current: 109A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 10mΩ, Technology: SiC, Kind of channel: enhanced, Gate charge: 68nC, Features of semiconductor devices: Kelvin terminal, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції IXFN130N90SK
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXFN130N90SK | Виробник : IXYS | Description: SICARBIDE-DISCRETE MOSFET SOT-22 |
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IXFN130N90SK | Виробник : IXYS | MOSFET MSFT SILICON CARBIDE MINI |
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IXFN130N90SK | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 900V; 109A; SOT227B; screw; SiC; 68nC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 10mΩ Technology: SiC Kind of channel: enhanced Gate charge: 68nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товар відсутній |