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IXTH360N055T2 IXYS
![littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_360n055t2_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 55V 360A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
300+ | 549.37 грн |
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Технічний опис IXTH360N055T2 IXYS
Description: MOSFET N-CH 55V 360A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 25 V.
Інші пропозиції IXTH360N055T2 за ціною від 515.72 грн до 935.02 грн
Фото | Назва | Виробник | Інформація |
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IXTH360N055T2 | Виробник : IXYS |
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на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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IXTH360N055T2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Power dissipation: 935W Features of semiconductor devices: thrench gate power mosfet Gate charge: 330nC Kind of channel: enhanced Reverse recovery time: 78ns Drain-source voltage: 55V Drain current: 360A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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IXTH360N055T2 | Виробник : Littelfuse |
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товар відсутній |
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IXTH360N055T2 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO247-3; 78ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Power dissipation: 935W Features of semiconductor devices: thrench gate power mosfet Gate charge: 330nC Kind of channel: enhanced Reverse recovery time: 78ns Drain-source voltage: 55V Drain current: 360A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET |
товар відсутній |