![IXTH270N04T4 IXTH270N04T4](https://ce8dc832c.cloudimg.io/v7/_cdn_/2D/F3/00/00/0/16338_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=f55ae6487ff4139e26964e5e5e8dbeb7f97a7f06)
IXTH270N04T4 IXYS
![IXTH(P)270N04T4.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO247-3
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 322.88 грн |
3+ | 269.33 грн |
4+ | 211.98 грн |
10+ | 211.25 грн |
11+ | 200.36 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTH270N04T4 IXYS
Description: MOSFET N-CH 40V 270A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247 (IXTH), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V.
Інші пропозиції IXTH270N04T4 за ціною від 240.44 грн до 387.46 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXTH270N04T4 | Виробник : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO247-3; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Case: TO247-3 On-state resistance: 2.4mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 48ns кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
![]() |
IXTH270N04T4 | Виробник : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V |
товар відсутній |
|||||||||||||
![]() |
IXTH270N04T4 | Виробник : IXYS |
![]() |
товар відсутній |