Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136440) > Сторінка 2240 з 2274
| Фото | Назва | Виробник | Інформація |
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IRFB3004PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 340A Power dissipation: 380W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.75mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced |
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IRFB3006GPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
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IRFB3006PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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IR2166STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO16; -400÷250mA; 1.4W; Ch: 2; 600V Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: ballast controller; gate driver; PFC controller Case: SO16 Output current: -400...250mA Power: 1.4W Number of channels: 2 Supply voltage: 10...25V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: tube Voltage class: 600V |
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BSB012NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W Case: CanPAK™ M; MG-WDSON-2 Technology: OptiMOS™ Mounting: SMD Drain-source voltage: 25V Drain current: 170A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
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BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Mounting: SMD Polarisation: unipolar Drain-source voltage: 25V Drain current: 103A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 57W Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ MX; MG-WDSON-2 |
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BSB014N04LX3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Mounting: SMD Case: CanPAK™ MX; MG-WDSON-2 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IPA032N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP Mounting: THT Case: TO220FP Power dissipation: 41W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 84A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET |
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IPP200N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 50A Power dissipation: 150W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 64 шт: термін постачання 21-30 дні (днів) |
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IPB180N04S4H0ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 250W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 173nC Kind of channel: enhanced |
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IM69D120V01XTSA1 | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC Interface: PDM Supply voltage: 1.62...3.6V DC Case: LLGA-5-1 Kind of integrated circuit: digital microphone Mounting: SMD Integrated circuit features: MEMS Type of integrated circuit: driver/sensor |
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IM69D130V01XTSA1 | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC Interface: PDM Supply voltage: 1.62...3.6V DC Case: LLGA-5-1 Kind of integrated circuit: digital microphone Mounting: SMD Integrated circuit features: MEMS Type of integrated circuit: driver/sensor |
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BSC900N20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8 Mounting: SMD Drain-source voltage: 200V Drain current: 15.2A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TDSON-8 |
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IPB019N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
на замовлення 950 шт: термін постачання 21-30 дні (днів) |
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IRFB7730PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 246A Power dissipation: 375W Case: TO220AB On-state resistance: 2.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 349 шт: термін постачання 21-30 дні (днів) |
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IRFB7734PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 183A Power dissipation: 290W Case: TO220AB On-state resistance: 2.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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BCR400WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuits Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller Power: 0.33W Supply voltage: 1.6...18V DC Mounting: SMD Case: SOT343 Type of integrated circuit: driver Integrated circuit features: active bias controller Kind of package: reel; tape |
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IPU80R1K0CEBKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 83W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 948 шт: термін постачання 21-30 дні (днів) |
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IRLU120NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 48W Case: IPAK Gate-source voltage: ±16V On-state resistance: 0.185Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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IRLU3110ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Power dissipation: 140W Case: IPAK Gate-source voltage: ±16V On-state resistance: 14mΩ Mounting: THT Gate charge: 34nC Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 155 шт: термін постачання 21-30 дні (днів) |
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IRLU3410PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: IPAK Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLU3636PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Power dissipation: 143W Case: IPAK Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IRLU7843PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 161A Power dissipation: 140W Case: IPAK Mounting: THT Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRLU8743PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 160A Power dissipation: 135W Case: IPAK Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 39nC Kind of channel: enhanced Features of semiconductor devices: logic level |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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IRFB4410PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 96A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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IRFB4410ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 97A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhanced |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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IRF7530TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.4A; 1.3W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.4A Power dissipation: 1.3W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFH5301TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 35A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
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IRFH5302TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 32A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
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IRFH5304TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6 Mounting: SMD Drain-source voltage: 30V Drain current: 22A Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: PQFN5X6 |
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IRFR3710ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
на замовлення 1752 шт: термін постачання 21-30 дні (днів) |
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IPB200N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 120V Drain current: 45A Power dissipation: 78W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhanced |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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AIHD15N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 26ns Turn-off time: 319ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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AIHD15N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 28ns Turn-off time: 177ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
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| IRF200B211 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9A Pulsed drain current: 34A Power dissipation: 80W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced |
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IRF200P222 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 129A Power dissipation: 556W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: THT Gate charge: 203nC Kind of package: tube Kind of channel: enhanced |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IRF200P223 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 71A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhanced |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IRF2204PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 210A Power dissipation: 330W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 135 шт: термін постачання 21-30 дні (днів) |
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| DZ1070N22K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 2.2kV Load current: 1.07kA Case: BG-PB70AT-1 Max. forward voltage: 0.75V Max. forward impulse current: 41kA Electrical mounting: screw Mechanical mounting: screw |
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| DZ1070N26K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 2.6kV Load current: 1.07kA Case: BG-PB70AT-1 Max. forward voltage: 0.75V Max. forward impulse current: 41kA Electrical mounting: screw Mechanical mounting: screw |
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| DZ1070N28K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 2.8kV Load current: 1.07kA Case: BG-PB70AT-1 Max. forward voltage: 0.75V Max. forward impulse current: 41kA Electrical mounting: screw Mechanical mounting: screw |
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AUIRF7640S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 30W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7647S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Power dissipation: 41W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7648M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Power dissipation: 63W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7665S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 14.4A Power dissipation: 30W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7669L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 114A Power dissipation: 100W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7675M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 45W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7736M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET Kind of package: reel Drain-source voltage: 40V Drain current: 108A Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET |
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AUIRF7737L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 156A Power dissipation: 83W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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AUIRF7739L2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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AUIRL7732S2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 58A Power dissipation: 41W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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AUIRL7736M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 112A Power dissipation: 63W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |
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AUIRL7766M2TR | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Power dissipation: 62.5W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
товар відсутній |
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IRF6613TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IRF6617TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IRF6618TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 29A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IRF6620TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 27A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 27A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IRF6623TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 16A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
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IRF6636TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 18A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 18A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |
| IRFB3004PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFB3006GPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFB3006PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.3 грн |
| 3+ | 204.27 грн |
| 6+ | 156.51 грн |
| 15+ | 148.43 грн |
| IR2166STRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -400÷250mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; PFC controller
Case: SO16
Output current: -400...250mA
Power: 1.4W
Number of channels: 2
Supply voltage: 10...25V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -400÷250mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; PFC controller
Case: SO16
Output current: -400...250mA
Power: 1.4W
Number of channels: 2
Supply voltage: 10...25V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 600V
товар відсутній
| BSB012NE2LXIXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Technology: OptiMOS™
Mounting: SMD
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W
Case: CanPAK™ M; MG-WDSON-2
Technology: OptiMOS™
Mounting: SMD
Drain-source voltage: 25V
Drain current: 170A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| BSB013NE2LXIXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 103A
On-state resistance: 1.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ MX; MG-WDSON-2
товар відсутній
| BSB014N04LX3GXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Mounting: SMD
Case: CanPAK™ MX; MG-WDSON-2
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IPA032N06N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 84A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
товар відсутній
| IPP200N15N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 50A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 64 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.95 грн |
| 3+ | 168.27 грн |
| 7+ | 138.87 грн |
| 17+ | 130.79 грн |
| IPB180N04S4H0ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 173nC
Kind of channel: enhanced
товар відсутній
| IM69D120V01XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Integrated circuit features: MEMS
Type of integrated circuit: driver/sensor
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Integrated circuit features: MEMS
Type of integrated circuit: driver/sensor
товар відсутній
| IM69D130V01XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Integrated circuit features: MEMS
Type of integrated circuit: driver/sensor
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Interface: PDM
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Kind of integrated circuit: digital microphone
Mounting: SMD
Integrated circuit features: MEMS
Type of integrated circuit: driver/sensor
товар відсутній
| BSC900N20NS3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 200V
Drain current: 15.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8
Mounting: SMD
Drain-source voltage: 200V
Drain current: 15.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
товар відсутній
| IPB019N06L3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
на замовлення 950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.06 грн |
| 5+ | 121.24 грн |
| 8+ | 114.63 грн |
| 21+ | 108.75 грн |
| 100+ | 105.07 грн |
| IRFB7730PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 349 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 252.43 грн |
| 3+ | 210.88 грн |
| 6+ | 169.73 грн |
| 14+ | 160.18 грн |
| IRFB7734PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 183A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 183A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 2.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BCR400WH6327XTSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Power: 0.33W
Supply voltage: 1.6...18V DC
Mounting: SMD
Case: SOT343
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Power: 0.33W
Supply voltage: 1.6...18V DC
Mounting: SMD
Case: SOT343
Type of integrated circuit: driver
Integrated circuit features: active bias controller
Kind of package: reel; tape
товар відсутній
| IPU80R1K0CEBKMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 948 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 39.16 грн |
| IRLU120NPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.7 грн |
| 8+ | 46.07 грн |
| 10+ | 36.96 грн |
| 28+ | 31.3 грн |
| 75+ | 30.71 грн |
| 76+ | 29.61 грн |
| IRLU3110ZPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.53 грн |
| 10+ | 91.11 грн |
| 11+ | 83.77 грн |
| 29+ | 79.36 грн |
| 75+ | 76.42 грн |
| IRLU3410PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLU3636PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.38 грн |
| IRLU7843PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRLU8743PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 109.99 грн |
| 10+ | 85.97 грн |
| 15+ | 58.78 грн |
| 41+ | 55.11 грн |
| IRFB4410PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFB4410ZPBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 90.21 грн |
| 10+ | 69.07 грн |
| 15+ | 58.78 грн |
| 41+ | 55.84 грн |
| IRF7530TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.4A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.4A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRFH5301TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 35A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 35A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
товар відсутній
| IRFH5302TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 32A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 32A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
товар відсутній
| IRFH5304TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 22A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Mounting: SMD
Drain-source voltage: 30V
Drain current: 22A
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN5X6
товар відсутній
| IRFR3710ZTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
на замовлення 1752 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.01 грн |
| 7+ | 59.52 грн |
| 17+ | 51.43 грн |
| 46+ | 48.5 грн |
| 500+ | 47.03 грн |
| IPB200N15N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 45A
Power dissipation: 78W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 45A; 78W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 45A
Power dissipation: 78W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| SPA15N60C3XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.74 грн |
| 3+ | 247.62 грн |
| 5+ | 190.31 грн |
| 13+ | 180.02 грн |
| AIHD15N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| AIHD15N60RFATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній
| IRF200B211 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 34A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 34A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 34A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF200P222 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 129A
Power dissipation: 556W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 129A; 556W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 129A
Power dissipation: 556W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 624.34 грн |
| 2+ | 435.73 грн |
| 6+ | 411.48 грн |
| IRF200P223 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 405.15 грн |
| 3+ | 288.03 грн |
| IRF2204PBF | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 135 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.23 грн |
| 11+ | 82.3 грн |
| 29+ | 77.89 грн |
| DZ1070N22K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.2kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.2kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DZ1070N26K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.6kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.6kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| DZ1070N28K |
|
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| AUIRF7640S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7647S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7648M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7665S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 30W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7669L2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Power dissipation: 100W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 114A; 100W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 114A
Power dissipation: 100W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7675M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 45W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 45W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7736M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Kind of package: reel
Drain-source voltage: 40V
Drain current: 108A
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET
Kind of package: reel
Drain-source voltage: 40V
Drain current: 108A
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DirectFET
товар відсутній
| AUIRF7737L2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Power dissipation: 83W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 156A; 83W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 156A
Power dissipation: 83W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRF7739L2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 125W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 125W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| AUIRL7732S2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; 41W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 58A
Power dissipation: 41W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| AUIRL7736M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 112A; 63W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 112A
Power dissipation: 63W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| AUIRL7766M2TR |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 62.5W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 62.5W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 62.5W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IRF6613TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6617TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6618TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 29A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6620TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 27A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 27A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 27A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 27A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6623TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 16A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IRF6636TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 18A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 18A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 18A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 18A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній