AUIRF7675M2TR Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 4.4A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V
Power Dissipation (Max): 2.7W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Description: MOSFET N-CH 150V 4.4A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V
Power Dissipation (Max): 2.7W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DirectFET™ Isometric M2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4800+ | 70.25 грн |
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Технічний опис AUIRF7675M2TR Infineon Technologies
Description: MOSFET N-CH 150V 4.4A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric M2, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V, Power Dissipation (Max): 2.7W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DirectFET™ Isometric M2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V.
Інші пропозиції AUIRF7675M2TR за ціною від 65.97 грн до 238.18 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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AUIRF7675M2TR | Виробник : INFINEON |
Description: INFINEON - AUIRF7675M2TR - Leistungs-MOSFET, n-Kanal, 150 V, 18 A, 0.047 ohm, DirectFET M2, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.047ohm |
на замовлення 4785 шт: термін постачання 21-31 дні (днів) |
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AUIRF7675M2TR | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 4.4A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric M2 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 11A, 10V Power Dissipation (Max): 2.7W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DirectFET™ Isometric M2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V |
на замовлення 9510 шт: термін постачання 21-31 дні (днів) |
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AUIRF7675M2TR | Виробник : Infineon Technologies | MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 |
на замовлення 4644 шт: термін постачання 21-30 дні (днів) |
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AUIRF7675M2TR | Виробник : INFINEON |
Description: INFINEON - AUIRF7675M2TR - Leistungs-MOSFET, n-Kanal, 150 V, 18 A, 0.047 ohm, DirectFET M2, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 7Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.047ohm |
на замовлення 4785 шт: термін постачання 21-31 дні (днів) |
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AUIRF7675M2TR | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 45W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4800 шт |
товар відсутній |
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AUIRF7675M2TR | Виробник : Infineon Technologies | Trans MOSFET N-CH Si 150V 4.4A Automotive 7-Pin Direct-FET M2 T/R |
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AUIRF7675M2TR | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 45W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 45W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |