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AUIRF7736M2TR Infineon Technologies
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Description: MOSFET N-CH 40V 22A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
на замовлення 3858 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 246.34 грн |
10+ | 199.07 грн |
100+ | 161.04 грн |
500+ | 134.34 грн |
1000+ | 115.03 грн |
2000+ | 108.31 грн |
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Технічний опис AUIRF7736M2TR Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric M4, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: DirectFET™ Isometric M4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V.
Інші пропозиції AUIRF7736M2TR за ціною від 158.48 грн до 158.48 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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AUIRF7736M2TR | Виробник : ROCHESTER ELECTRONICS |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
на замовлення 7808 шт: термін постачання 21-31 дні (днів) |
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AUIRF7736M2TR | Виробник : Infineon Technologies |
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AUIRF7736M2TR | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET Kind of package: reel Drain-source voltage: 40V Drain current: 108A Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET кількість в упаковці: 4800 шт |
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AUIRF7736M2TR | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric M4 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: DirectFET™ Isometric M4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V |
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AUIRF7736M2TR | Виробник : Infineon Technologies |
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товар відсутній |
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AUIRF7736M2TR | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 108A; 63W; DirectFET Kind of package: reel Drain-source voltage: 40V Drain current: 108A Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DirectFET |
товар відсутній |