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AIHD15N60RFATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
Description: IC DISCRETE 600V TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
на замовлення 8515 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
243+ | 86.73 грн |
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Технічний опис AIHD15N60RFATMA1 Infineon Technologies
Description: IC DISCRETE 600V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/160ns, Switching Energy: 270µJ (on), 250µJ (off), Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 90 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 240 W.
Інші пропозиції AIHD15N60RFATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
AIHD15N60RFATMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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AIHD15N60RFATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 28ns Turn-off time: 177ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
товар відсутній |
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AIHD15N60RFATMA1 | Виробник : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/160ns Switching Energy: 270µJ (on), 250µJ (off) Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 240 W |
товар відсутній |
|
![]() |
AIHD15N60RFATMA1 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
AIHD15N60RFATMA1 | Виробник : INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 28ns Turn-off time: 177ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товар відсутній |