Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136441) > Сторінка 2245 з 2275
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IRFR3411TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 130W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPB65R280E6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhanced |
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IPI65R280C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced |
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IPI65R280E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced |
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IPP65R280E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRL7833STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 150A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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IPA037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Power dissipation: 41W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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IPD90N04S405ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A Mounting: SMD Case: PG-TO252-3-313 Kind of package: reel Power dissipation: 65W Gate charge: 18nC Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 344A Drain-source voltage: 40V Drain current: 61A On-state resistance: 5.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
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IPD068P03L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Type of transistor: P-MOSFET Power dissipation: 100W Drain current: -70A Polarisation: unipolar Drain-source voltage: -30V On-state resistance: 11mΩ Mounting: SMD Technology: OptiMOS™ P3 |
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| FP10R12W1T7B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A Collector current: 10A Pulsed collector current: 20A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Case: AG-EASY1B-2 Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 1B Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge |
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IPB065N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3 On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 150V Drain current: 130A |
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IPB067N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 136W; PG-TO263-3 Mounting: SMD Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 80V Drain current: 80A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET |
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IRFR18N15DTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPA60R280P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPW60R280P6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| BTS72002EPAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 On-state resistance: 0.12Ω Kind of package: reel; tape Supply voltage: 4.1...28V DC Technology: PROFET™+2 Operating temperature: -40...150°C Turn-on time: 170µs Turn-off time: 0.15ms |
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| BTS72002EPCXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape Mounting: SMD Operating temperature: -40...150°C Supply voltage: 4.1...28V DC Kind of package: reel; tape Technology: PROFET™+2 Kind of integrated circuit: high-side Case: PG-TSDSO-14 On-state resistance: 0.12Ω Turn-on time: 170µs Turn-off time: 0.15ms Output current: 1.2A Type of integrated circuit: power switch Number of channels: 2 Kind of output: N-Channel |
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IRF7503TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.4A Power dissipation: 1.25W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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TLE7181EMXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Supply voltage: 7...34V DC Mounting: SMD Case: SSOP24 Operating temperature: -40...150°C Number of channels: 4 Kind of output: non-inverting Turn-on time: 250ns Turn-off time: 200ns Topology: H-bridge; push-pull |
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TLE7182EMXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Supply voltage: 7...34V DC Mounting: SMD Case: SSOP24 Operating temperature: -40...150°C Number of channels: 4 Turn-on time: 250ns Turn-off time: 200ns Topology: H-bridge; push-pull |
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BTS244ZE3043AKSA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 19A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-5 On-state resistance: 13mΩ Kind of package: tube Technology: TEMPFET® Operating temperature: -40...175°C Output voltage: 55V Power dissipation: 170W Integrated circuit features: internal temperature sensor |
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IPA60R280C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R280E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R280P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB60R280C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3 Technology: CoolMOS™ C6 Mounting: SMD Power dissipation: 104W Case: PG-TO263-3 Polarisation: unipolar Drain current: 13.8A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.28Ω |
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IPB60R280P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK Technology: CoolMOS™ P7 Mounting: SMD Power dissipation: 53W Case: D2PAK Kind of package: reel Polarisation: unipolar Drain current: 8A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.28Ω Gate charge: 18nC |
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IPD60R280CFD7 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.536Ω Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
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IPD60R280P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3 Polarisation: unipolar Power dissipation: 53W Type of transistor: N-MOSFET On-state resistance: 0.28Ω Drain current: 8A Features of semiconductor devices: ESD protected gate Gate charge: 18nC Drain-source voltage: 600V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD |
на замовлення 2458 шт: термін постачання 21-30 дні (днів) |
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IPD60R280P7S | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3 Polarisation: unipolar Power dissipation: 53W Type of transistor: N-MOSFET On-state resistance: 0.28Ω Drain current: 8A Features of semiconductor devices: ESD protected gate Gate charge: 18nC Drain-source voltage: 600V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD |
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| IPD60R280PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A Technology: CoolMOS™ PFD7 Mounting: SMD Power dissipation: 51W Features of semiconductor devices: ESD protected gate Case: TO252 Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 549mΩ Pulsed drain current: 31A |
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IPI60R280C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3 Case: PG-TO262-3 Drain-source voltage: 600V Drain current: 13.8A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Technology: CoolMOS™ C6 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT |
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IPP60R280CFD7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 52W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.536Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
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IPP60R280E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP60R280P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 53W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPW60R280C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPW60R280E6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPAN60R280PFD7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 31A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 549mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| IAUC60N04S6L030HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUC60N04S6L039ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Pulsed drain current: 240A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUC60N04S6L045HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Pulsed drain current: 193A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 6mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUC60N04S6N031HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 311A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUC60N04S6N044ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 240A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
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| IAUC60N04S6N050HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 171A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
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| IPB160N04S4LH1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Pulsed drain current: 640A Power dissipation: 167W Case: PG-TO263-7-3 Gate-source voltage: -16...20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced |
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IRF8734TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BSZ097N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Kind of channel: enhanced |
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IRS2308PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Operating temperature: -40...125°C Mounting: THT Output current: -600...200mA Type of integrated circuit: driver Voltage class: 600V Turn-on time: 330ns Power: 1W Kind of package: tube Case: DIP8 Turn-off time: 235ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: MOSFET half-bridge Supply voltage: 10...20V DC |
товар відсутній |
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SPA07N60C3 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 32W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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SPP07N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.6A Power dissipation: 83W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IR2213PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -2...1.7A Power: 1.6W Number of channels: 2 Supply voltage: 12...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 280ns Turn-off time: 225ns |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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TT162N14KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 162A; BG-PB34-1; screw Type of module: thyristor Case: BG-PB34-1 Mechanical mounting: screw Max. off-state voltage: 1.4kV Electrical mounting: FASTON connectors; screw Load current: 162A Semiconductor structure: double series Max. forward impulse current: 5.2kA Gate current: 150mA Max. forward voltage: 1.41V |
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BSC0901NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced |
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BSC0901NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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BSZ0901NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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BSZ0901NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 69W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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IPT60R065S7XTMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A Drain-source voltage: 600V Drain current: 8A On-state resistance: 137mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Technology: CoolMOS™ S7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 126A Mounting: THT Case: TO220 |
товар відсутній |
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BSS7728NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhanced |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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IRS25401PBF | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; buck; high-/low-side,LED controller; DIP8; -700÷500mA Type of integrated circuit: driver Topology: buck Kind of integrated circuit: high-/low-side; LED controller Case: DIP8 Output current: -700...500mA Power: 1W Number of channels: 2 Supply voltage: 8...16.6V DC Mounting: THT Operating temperature: -25...125°C Kind of package: tube Voltage class: 200V Turn-on time: 320ns Turn-off time: 180ns |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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| IRFS4410ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 69A Pulsed drain current: 390A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |
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IRGP30B60KD-EP | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 304W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 304W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |
| IRFR3411TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPB65R280E6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPI65R280C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPI65R280E6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| IPP65R280E6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRL7833STRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
| IPA037N08N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 41W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 242.14 грн |
| 3+ | 194.72 грн |
| 7+ | 134.47 грн |
| 18+ | 127.12 грн |
| IPD90N04S405ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Mounting: SMD
Case: PG-TO252-3-313
Kind of package: reel
Power dissipation: 65W
Gate charge: 18nC
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 344A
Drain-source voltage: 40V
Drain current: 61A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 61A; Idm: 344A
Mounting: SMD
Case: PG-TO252-3-313
Kind of package: reel
Power dissipation: 65W
Gate charge: 18nC
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 344A
Drain-source voltage: 40V
Drain current: 61A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
| IPD068P03L3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Type of transistor: P-MOSFET
Power dissipation: 100W
Drain current: -70A
Polarisation: unipolar
Drain-source voltage: -30V
On-state resistance: 11mΩ
Mounting: SMD
Technology: OptiMOS™ P3
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Type of transistor: P-MOSFET
Power dissipation: 100W
Drain current: -70A
Polarisation: unipolar
Drain-source voltage: -30V
On-state resistance: 11mΩ
Mounting: SMD
Technology: OptiMOS™ P3
товар відсутній
| FP10R12W1T7B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Case: AG-EASY1B-2
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
товар відсутній
| IPB065N15N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 150V
Drain current: 130A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 150V
Drain current: 130A
товар відсутній
| IPB067N08N3GATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 136W; PG-TO263-3
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 80A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 136W; PG-TO263-3
Mounting: SMD
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 80V
Drain current: 80A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
товар відсутній
| IRFR18N15DTRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| IPA60R280P6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPW60R280P6FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BTS72002EPAXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Turn-on time: 170µs
Turn-off time: 0.15ms
товар відсутній
| BTS72002EPCXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 4.1...28V DC
Kind of package: reel; tape
Technology: PROFET™+2
Kind of integrated circuit: high-side
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Turn-on time: 170µs
Turn-off time: 0.15ms
Output current: 1.2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 4.1...28V DC
Kind of package: reel; tape
Technology: PROFET™+2
Kind of integrated circuit: high-side
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Turn-on time: 170µs
Turn-off time: 0.15ms
Output current: 1.2A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
товар відсутній
| IRF7503TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.4A
Power dissipation: 1.25W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| TLE7181EMXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Supply voltage: 7...34V DC
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Number of channels: 4
Kind of output: non-inverting
Turn-on time: 250ns
Turn-off time: 200ns
Topology: H-bridge; push-pull
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Supply voltage: 7...34V DC
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Number of channels: 4
Kind of output: non-inverting
Turn-on time: 250ns
Turn-off time: 200ns
Topology: H-bridge; push-pull
товар відсутній
| TLE7182EMXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Supply voltage: 7...34V DC
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Number of channels: 4
Turn-on time: 250ns
Turn-off time: 200ns
Topology: H-bridge; push-pull
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Supply voltage: 7...34V DC
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Number of channels: 4
Turn-on time: 250ns
Turn-off time: 200ns
Topology: H-bridge; push-pull
товар відсутній
| BTS244ZE3043AKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 19A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-5
On-state resistance: 13mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 55V
Power dissipation: 170W
Integrated circuit features: internal temperature sensor
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 19A; Ch: 1; N-Channel; THT; PG-TO220-5
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 19A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-5
On-state resistance: 13mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 55V
Power dissipation: 170W
Integrated circuit features: internal temperature sensor
товар відсутній
| IPA60R280C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPA60R280E6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPA60R280P7 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPB60R280C6ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Technology: CoolMOS™ C6
Mounting: SMD
Power dissipation: 104W
Case: PG-TO263-3
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Technology: CoolMOS™ C6
Mounting: SMD
Power dissipation: 104W
Case: PG-TO263-3
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
товар відсутній
| IPB60R280P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Technology: CoolMOS™ P7
Mounting: SMD
Power dissipation: 53W
Case: D2PAK
Kind of package: reel
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Gate charge: 18nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Technology: CoolMOS™ P7
Mounting: SMD
Power dissipation: 53W
Case: D2PAK
Kind of package: reel
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Gate charge: 18nC
товар відсутній
| IPD60R280CFD7 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
товар відсутній
| IPD60R280P7ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
на замовлення 2458 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 87.83 грн |
| 6+ | 72.74 грн |
| 25+ | 66.87 грн |
| IPD60R280P7S |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
товар відсутній
| IPD60R280PFD7SAUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Technology: CoolMOS™ PFD7
Mounting: SMD
Power dissipation: 51W
Features of semiconductor devices: ESD protected gate
Case: TO252
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Pulsed drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Technology: CoolMOS™ PFD7
Mounting: SMD
Power dissipation: 51W
Features of semiconductor devices: ESD protected gate
Case: TO252
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Pulsed drain current: 31A
товар відсутній
| IPI60R280C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 13.8A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 13.8A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
товар відсутній
| IPP60R280CFD7 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R280E6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPP60R280P7 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IPW60R280C6FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPW60R280E6FKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IPAN60R280PFD7SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 7A; Idm: 31A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| IAUC60N04S6L030HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC60N04S6L039ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC60N04S6L045HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC60N04S6N031HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC60N04S6N044ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IAUC60N04S6N050HATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IPB160N04S4LH1ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRF8734TRPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
| BSZ097N10NS5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRS2308PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Operating temperature: -40...125°C
Mounting: THT
Output current: -600...200mA
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 330ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 235ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Operating temperature: -40...125°C
Mounting: THT
Output current: -600...200mA
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 330ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 235ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Supply voltage: 10...20V DC
товар відсутній
| SPA07N60C3 | |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 107.28 грн |
| 9+ | 98.46 грн |
| 10+ | 96.26 грн |
| 25+ | 93.32 грн |
| 50+ | 90.38 грн |
| SPP07N60C3 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IR2213PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...1.7A
Power: 1.6W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...1.7A
Power: 1.6W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 663.11 грн |
| 3+ | 425.44 грн |
| 6+ | 401.93 грн |
| TT162N14KOF |
|
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 162A; BG-PB34-1; screw
Type of module: thyristor
Case: BG-PB34-1
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: FASTON connectors; screw
Load current: 162A
Semiconductor structure: double series
Max. forward impulse current: 5.2kA
Gate current: 150mA
Max. forward voltage: 1.41V
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 162A; BG-PB34-1; screw
Type of module: thyristor
Case: BG-PB34-1
Mechanical mounting: screw
Max. off-state voltage: 1.4kV
Electrical mounting: FASTON connectors; screw
Load current: 162A
Semiconductor structure: double series
Max. forward impulse current: 5.2kA
Gate current: 150mA
Max. forward voltage: 1.41V
товар відсутній
| BSC0901NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSC0901NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSZ0901NSATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| BSZ0901NSIATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IPT60R065S7XTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Drain-source voltage: 600V
Drain current: 8A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Mounting: THT
Case: TO220
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Drain-source voltage: 600V
Drain current: 8A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Mounting: THT
Case: TO220
товар відсутній
| BSS7728NH6327XTSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhanced
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 44+ | 9.02 грн |
| 100+ | 5.96 грн |
| 217+ | 3.94 грн |
| 596+ | 3.73 грн |
| IRS25401PBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED controller; DIP8; -700÷500mA
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED controller
Case: DIP8
Output current: -700...500mA
Power: 1W
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 320ns
Turn-off time: 180ns
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED controller; DIP8; -700÷500mA
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED controller
Case: DIP8
Output current: -700...500mA
Power: 1W
Number of channels: 2
Supply voltage: 8...16.6V DC
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 320ns
Turn-off time: 180ns
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.89 грн |
| IRFS4410ZTRLPBF |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; Idm: 390A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Pulsed drain current: 390A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
| IRGP30B60KD-EP |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 304W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 304W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 304W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 304W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній